Electronic Devices and Circuits (2008) - K.

Lal Kishore
Chapter 4 - Transistor Characteristics - (Pg.185)
4.1.2 TRANSISTOR CURRENT COMPONENTS

IEO is emitter reverse saturation current (when emitter-base junction is reverse biased).
ICO is collector reverse saturation current (when collector-base junction is reverse biased).
ICBO is the collector cut-off current that flowing not through the junction, but around it, due to leakage current, when the emitter current is zero.
|ICBO| can be > ICO.
IEBO is the emitter cut-off current that flowing not through the junction, but around it, due to leakage current, when the collector current is zero.
ICEO is the reverse collector to emitter current when base is open.

4.4 TYPES OF TRANSISTOR CONFIGURATIONS

4.4.2 COMMON EMITTER CONFIGURATION (C.E)

IE + I B + I C = 0
IE = – (IB + IC)

Condition of the Saturation

1. |IB| ≥ |IC / β|
2. + VCB (PNP); – VCB (NPN)

β(dc) is designated as hFE (DC forward current transfer ratio).

α = β / (β + 1)
β = α / (1 – α) = IC / IB = Large Signal Current Gain = hFE

IC = (1 + β) ICBO + β IB or ICEO + β IB
ICEO = ICBO / (1 – α) or ICBO (β + 1)

4.5 CONVENTION FOR TRANSISTORS AND DIODES

CUT-OFF CONDITIONS

Problem 4.5
The reverse saturation current of the Germanium transistor shown in the Fig 4.18. is 2 µA at room temperature of (25°C) and increases by a factor of 2 for each
temperature increase of 10°C. The bias VBB = 5V. Find the maximum allowable value of RB if the transistor is to remain cut-off at a temperature of 75° C.

ICBO (µA) 64 VCC

RC
VBB 5 NPN
RB
R: in (kΩ); I: in (mA) GROUND GROUND

VBE = – VBB + RB ICBO ≤ – 0,1

 Then
– 0,1 = – VBB + RB ICBO
RB = (– VBB – 0,1) / ICBO 76.5625

ICBO' = ICBO 2 esp(ΔT°/10°C) (...????? ogni 10°C)

Es.:
ICBO (25°C) = 15nA; ΔT° = 65°– 25° = 40°C
ICBO' = 15 2^(40/10) = 240 (nA) ICBO (nA) 15 ΔT°C 40 ICBO' (nA) 240

Problem 4.8 – Pg.208

If α = 0.98, and VBE = 0.6 V, find RI in the circuit shown in Fig. 4.20 an Emitter Current IE = -2 mA; Neglect reverse saturation current.

VCC 12
VC 5.28 RC 3.3 6.72 VRC
α 0.98 VR1 4.48 58.66667 R1 IRC 2.036364
VBE 0.6 IR1 0.076364 IB IC 1.96 5.28 VC
IE 2 VB 0.8 0.04 5.08 VCE
NPN IR2 0.036364 IE 2 0.2 VE
VR2 0.8 22 R2 RE 0.1
R: in (kΩ); I: in (mA) GND GND

β = α / (1 – α) 49
IE = IC (1 + (1 / β)) ⸫
IC = IE / (1 + (1 / β)) 1.96
IB = IE / (β + 1) 0.04

VB = VBE + IE RE 0.8
IR2 = VB / R2 0.036364
IR1 = IB + IR2 0.076364
IRC = IR1 + IC 2.036364
VR1 = VCC – VRC – VB 4.48
R1 = VR1 / IR1 58.66667
 Foglio2

IE = IB + IC = IB + β * IB = IB * (β + 1) = IC * (1 + β –1) ≈ IC or IC * (1 + (1 / β))

IE = IB 131.202 β 393 IB+β*IB 51693.588 IB*(β+1) 51693.588

IB = IE – IC = (IE + (β + 1) / (β + 1)) – 1 = IE / (β + 1)

IB = IE 131.202 β 393 (IE+(β+1)/(β+1))–1 0.333 IE/(β+1)

IC = β * IB = IE / (1 + (1 / β))

IC = IB 131.202 β 393 β*IB 51562.386 IE/(1+(1/β)) 51562.386

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 Foglio2

IC*(1+β–1) 51693.588

0.333

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