Professional Documents
Culture Documents
Chapter 5
DC Biasing—BJTs
The DC input
Operating Point
establishes an operating
or quiescent point
called the Q-point.
IB changes → IC changes
→ VC ( = VCC – RCIC ) changes
If an amplifier is not biased with correct dc voltages on the input and output, it
can go into saturation or cutoff when an input signal is applied
IC
IB
IC(sat)
IB = 50 A
IC = βI B
IB = 40 A
IC(sat)/2 Q-Point IB = 30 A
IB = 20 A
IB = 10 A
IB = 0 A
VCE
VCC/2 VCC
VCE = VCC − IC RC
Basic Electronics 2023
Base bias (fixed bias)
10
VCC
VCC − VBE
IB =
RB
IC
RC
IC = βI B
RB
Output
IB
VCE = VCC − IC RC
Input Q1
= dc current gain = hFE
+0.7 V
IE
VBE
IB VCE = VCC − I C RC
hFE = 100 = 8V − ( 2.028mA )( 2kΩ )
= 3.94V
+0.7 V
IE The circuit is midpoint biased.
VBE
Construct the dc load line for the circuit shown in the previous
slide, and plot the Q-point from the values obtained in Example 1.
Determine whether the circuit is midpoint biased.
IC (mA)
VCC 8V
I C (sat ) = = = 4mA
RC 2kΩ
4
2 Q
VCE (V)
2 4 6 8 10
Basic Electronics 2023
Example 3. (Q-point shift.)
13
The transistor has values of hFE = 100 when T = 25 °C and
hFE = 150 when T = 100 °C. Determine the Q-point values of
IC and VCE at both of these temperatures.
+8 V
IB
hFE = 100 (T = 25C)
hFE = 150 (T = 100C)
+0.7 V
IE
VBE
+10 V R2
VB = VCC
R1 + R2
4.7kΩ
= (10V ) = 2.07V
22.7kΩ
RC
R1
IC
3 k VE = VB − 0.7V
I1
18 k = 2.07V − 0.7V = 1.37V
IB Because ICQ IE (or hFE >> 1),
hFE = 50 VE 1.37V
I CQ = = 1.25mA
RE 1.1kΩ
R2
I2
4.7 k
RE VCEQ = VCC − I CQ ( RC + RE )
1.1 k
IE = 10V − (1.25mA )( 4.1kΩ ) = 4.87V
IB I 2 10I B
hFE = 50
R2
I2 RE
4.7 k
1.1 k
IE
R2 680Ω
VB = VCC = (10V ) = 3.12V
R1 + R2 2180Ω
VE = VB − 0.7V = 3.12V − 0.7V = 2.42V
VE 2.42V
I CQ IE = = = 10mA
RE 240Ω
hFE ( ave ) = hFE (min) hFE (max) = 100 300 = 173
IE 10mA
IB = = = 57.5μA
hFE (ave) + 1 174
Basic Electronics 2023
Stability of Voltage Divider Bias Circuit
21
IE 10mA
At hFE = 100, I B = = 100μA and I CQ = I E − I B 9.90mA
hFE + 1 101
IE 10mA
At hFE = 300, I B = = 33μA and I CQ = I E − I B 9.97mA
hFE + 1 301
IC (mA)
15 IB
hFE = 50
10 I2
R2
4.7 k
RE
240
VCE (off ) = VCC = 10V
IE
VCE (V)
2 4 6 8 10 12
Basic Electronics 2023
Base input resistance. (1)
23
I2 R2 I2 R2 IB RIN(base)
RE
IE
RIN(base)
Basic Electronics 2023
Base input resistance. (2)
24
Input
I2 R2
VE increases →VBE decreases
IE RE
IB decreases
Quantitative explanation (expression in terms of quantity
IC RC
I1 R1 Q-point equations (assume
that hFERE > 10R2):
IB R2
Output VB = VCC
R1 + R2
Input VE = VB − 0.7V
I2 R2 VE
IE RE I CQ I E =
RE
VCEQ = VCC − I CQ ( RC + RE )
IE
VCC − VBE
IB =
RC RB + ( hFE + 1) RC
1.5 k
10V − 0.7V
RB = = 28.05μA
180kΩ + 1011.5kΩ
180 k I CQ = hFE I B = 100 28.05μA
IC
IB
IB decreases
IE
IC does not increase that much.
Good Stability. Less dependent
on hFE and temperature.
+VCC
Circuit recognition: The base
resistor is connected between
the base and the collector
RC terminals of the transistor.
RB Advantage: A simple circuit
with relatively stable Q-point.
IC Disadvantage: Relatively poor
IB
ac characteristics.
Applications: Used primarily to
IE bias linear amplifiers.
VCC − VBE
IB =
(hFE + 1) RC + RB
RC
ICQ = hFE I B
RB
VCEQ VCC − ICQ RC
IC
IB
IE
ICQ = hFE I B
RB RC
IC
I E = ( hFE + 1) I B
IB
VCEQ = VCC − I C RC − I E RE
VCC − I CQ ( RC + RE )
IE RE
+VCC
VCC − VBE 16V − 0.7V
IB = =
RB + ( hFE + 1) RE 680kΩ + 511.6kΩ
= 20.09μA
RB RC ICQ = hFE I B = 50 20.09μA = 1mA
680k 6.2k
VCEQ VCC − I CQ ( RC + RE )
= 16V − (1mA )( 7.8kΩ ) = 8.2V
hFE = 50
RE
1.6k
RB RC
IC VE increases
IB
IB decreases
IE RE
IC does not increase that much.
IC is less dependent on hFE and
temperature.
+VCC
Circuit recognition: Similar to
voltage divider bias with R2
missing (or base bias with RE
added).
RB RC
IC
Advantage: A simple circuit
with relatively stable Q-point.
IB
Disadvantage: Requires more
components than collector-
feedback bias.
IE RE Applications: Used primarily to
bias linear amplifiers.
+VCC
Q-point relationships:
VCC − VBE
IB =
RB + (hFE + 1) RE
RB
IC
RC
ICQ = hFE I B
IB
VCEQ VCC − I CQ ( RC + RE )
IE RE
Saturation current:
VCC
ICsat =
RC
To ensure saturation:
ICsat
IB
βdc
Emitter-collector
resistance at VCEsat VCC
Rsat = Rcutoff =
saturation and cutoff: ICsat ICEO
Basic Electronics 2023
Phân giải gần đúng:
Giả sử I2 >> IB khi đó I1 ≈ I2, các giá trị dòng điện và điện áp sẽ được tính theo các công thức sau:
R2
VB = VCC
R1 + R2
VE = VB − 0.7V
V
IE = E
RE
Với hFE lớn (hFE >>1) thì IC ≈ IE,
VCE = VCC − I C ( RC + RE )
Điều kiện I2 >> IB được chấp nhận khi R > 10R .
E 2
Thật vậy:
Với RE > 10R2 → VE/IE >10 VB/I2 → VB/IB > 10 VB/I2 → I2 > 10 IB