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Chapter 5
DC Biasing—BJTs

Base bias (fixed bias)


Voltage divider bias
Collector-feedback bias
Emitter-feedback bias

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Notation
2

vCE : total instantaneous value


vCE = VCE + vce

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Biasing
3

 Biasing: Applying DC voltages to a transistor in order to turn it on so


that it can amplify AC signals.

The DC input
Operating Point
establishes an operating
or quiescent point
called the Q-point.

Stability refers to a condition in


which the currents and voltages
remain fairly constant over a wide
range of temperatures and
transistor Beta () values.

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Amplifying mechanism
4

IB changes → IC changes
→ VC ( = VCC – RCIC ) changes

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Examples of linear and nonlinear operation
of an inverting amplifier
5

If an amplifier is not biased with correct dc voltages on the input and output, it
can go into saturation or cutoff when an input signal is applied

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Variations in collector current and collector-to-emitter voltage as a result of
a variation in base current
6

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7 Basic Electronics 2023
Q-point
adjustment
8

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Optimum Q-point with amplifier operation,
Where?
9

IC
IB
IC(sat)
IB = 50 A
IC = βI B
IB = 40 A

IC(sat)/2 Q-Point IB = 30 A

IB = 20 A
IB = 10 A
IB = 0 A
VCE
VCC/2 VCC

VCE = VCC − IC RC
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Base bias (fixed bias)
10
VCC
VCC − VBE
IB =
RB

IC
RC
IC = βI B
RB
Output
IB
VCE = VCC − IC RC
Input Q1
 = dc current gain = hFE
+0.7 V
IE
VBE

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Example 1
11

+8 V VCC − 0.7V 8V − 0.7V


IB = =
RB 360kΩ
= 20.28μA
RC
IC 2 k I C = hFE I B = (100 )( 20.28μA )
RB
= 2.028mA
360 k

IB VCE = VCC − I C RC
hFE = 100 = 8V − ( 2.028mA )( 2kΩ )
= 3.94V
+0.7 V
IE The circuit is midpoint biased.
VBE

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Example 2
12

Construct the dc load line for the circuit shown in the previous
slide, and plot the Q-point from the values obtained in Example 1.
Determine whether the circuit is midpoint biased.

IC (mA)
VCC 8V
I C (sat ) = = = 4mA
RC 2kΩ
4

3 VCE ( off ) = VCC = 8V

2 Q

VCE (V)
2 4 6 8 10
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Example 3. (Q-point shift.)
13
The transistor has values of hFE = 100 when T = 25 °C and
hFE = 150 when T = 100 °C. Determine the Q-point values of
IC and VCE at both of these temperatures.
+8 V

Temp(°C) IB (A) IC (mA) VCE (V)


RC 25 20.28 2.028 3.94
I 2 k 100 20.28 3.04 1.92
RB C
360 k

IB
hFE = 100 (T = 25C)
hFE = 150 (T = 100C)

+0.7 V
IE
VBE

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Base bias characteristics. (1)
14
VCC
Circuit recognition: A single resistor
(RB) between the base terminal and
VCC. No emitter resistor.
RC
IC
RB
Output
IB
Input Q1 Advantage: Circuit simplicity.
Disadvantage: Q-point shift with temp.
+0.7 V
IE Applications: Switching circuits only.
VBE

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Base bias characteristics. (2)
15
VCC
Load line equations:
VCC
I C (sat ) 
RC RC
IC
RB VCE (off ) = VCC
Output
IB
Q-point equations:
Input Q1
VCC − VBE
+0.7 V
IE IB =
VBE
RB
I C = hFE I B
VCE = VCC − I C RC
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Voltage divider bias. (1)
16
+VCC
Assume that I2 > 10IB.
R2
VB = VCC
R1 + R2
IC RC
I1 R1 VE = VB − 0.7V
VE
IB
Output IE =
RE
Input Assume that ICQ  IE (or
I2 R2 hFE >> 1). Then
IE RE
VCEQ = VCC − I CQ ( RC + RE )

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Example 4. (1)
17
Determine the values of ICQ and VCEQ for the circuit.

+10 V R2
VB = VCC
R1 + R2
4.7kΩ
= (10V ) = 2.07V
22.7kΩ
RC
R1
IC
3 k VE = VB − 0.7V
I1
18 k = 2.07V − 0.7V = 1.37V
IB Because ICQ  IE (or hFE >> 1),
hFE = 50 VE 1.37V
I CQ  = = 1.25mA
RE 1.1kΩ
R2
I2
4.7 k
RE VCEQ = VCC − I CQ ( RC + RE )
1.1 k
IE = 10V − (1.25mA )( 4.1kΩ ) = 4.87V

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Example 4. (2)
18
Verify that I2 > 10 IB.
+10 V
VB 2.07V
I2 = = = 440.4μA
R2 4.7kΩ
IE 1.25mA
RC IB = =
R1
IC
3 k hFE + 1 50+1
I1
18 k = 24.51μA

IB  I 2  10I B
hFE = 50

R2
I2 RE
4.7 k
1.1 k
IE

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Which value of hFE do I use?
19

Transistor specification sheet may list any


combination of the following hFE: max. hFE,
min. hFE, or typ. hFE. Use typical value if
there is one. Otherwise, use

hFE (ave) = hFE (min)  hFE (max)

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Example 5
20
A voltage-divider bias circuit has the following values:
R1 = 1.5 k, R2 = 680 , RC = 260 , RE = 240  and
VCC = 10 V. Assuming the transistor is a 2N3904,
determine the value of IB for the circuit.

R2 680Ω
VB = VCC = (10V ) = 3.12V
R1 + R2 2180Ω
VE = VB − 0.7V = 3.12V − 0.7V = 2.42V
VE 2.42V
I CQ  IE = = = 10mA
RE 240Ω
hFE ( ave ) = hFE (min)  hFE (max) = 100  300 = 173

IE 10mA
IB = = = 57.5μA
hFE (ave) + 1 174
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Stability of Voltage Divider Bias Circuit
21

The Q-point of voltage divider bias circuit is less


dependent on hFE than that of the base bias (fixed
bias).

For example, if IE is exactly 10 mA, the range of hFE is


100 to 300. Then

IE 10mA
At hFE = 100, I B = =  100μA and I CQ = I E − I B  9.90mA
hFE + 1 101
IE 10mA
At hFE = 300, I B = =  33μA and I CQ = I E − I B  9.97mA
hFE + 1 301

ICQ hardly changes over the entire range of hFE.

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Load line for voltage divider bias circuit
22

IC (mA)

VCC 10V +10 V


25 I C (sat) = = = 20mA
RC + RE 260Ω+240Ω
20 R1
IC
RC
260
I1
18 k

15 IB
hFE = 50

10 I2
R2
4.7 k
RE
240 
VCE (off ) = VCC = 10V
IE

VCE (V)
2 4 6 8 10 12
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Base input resistance. (1)
23

VCC VCC VE = I E RE = I B (hFE + 1) RE


VE
RIN (base) = = (hFE + 1) RE
IB
I1 R1
IC RC
I1 R1
 hFE RE
0.7 V
IB
May be ignored.

I2 R2 I2 R2 IB RIN(base)
RE
IE
RIN(base)
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Base input resistance. (2)
24

VCC R2 // RIN (base)


VB = VCC
R1 + R2 // RIN (base)
R2 // ( hFE RE )
I1 R1 = VCC
R1 + R2 // ( hFE RE )
IB
VB
REQ
= VCC
R1 + REQ REQ = R2 // ( hFE RE )
I2 R2 IB RIN(base)

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Example 6.
25 REQ = R2 // ( hFE RE )
VCC=20V
= 10kΩ// ( 50 1.1kΩ ) = 8.46kΩ
REQ
VB  VCC
RC R1 + REQ
IC
R1 6.2k 8.46kΩ
= ( 20V )
I1
68k = 2.21V
68kΩ + 8.46kΩ
VE VB − 0.7V
hFE = 50
I CQ  I E = =
RE RE
IE 2.21V − 0.7V
I2
R2
RE
= = 1.37mA
10k 1.1kΩ
1.1k
VCEQ = VCC − I CQ ( RC + RE )
= 20V − (1.37mA )( 7.3kΩ ) = 9.99V

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Voltage-divider bias characteristics. (1)
26
+VCC
Circuit recognition: The
voltage divider in the base
circuit.

IC RC Advantages: The circuit Q-


I1 R1 point values are stable
against changes in hFE.
IB
Output Disadvantages: Requires
more components than most
Input other biasing circuits.
I2 R2 Applications: Used primarily
IE RE
to bias linear amplifier.

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Circuit Stability of Voltage-divider Bias
27

+VCC Qualitative explanation (based on some quality or


characteristic
hFE increases
IC RC
I1 R1
IC increases (if IB is the same)
IB
Output

Input
I2 R2
VE increases →VBE decreases
IE RE

IB decreases
Quantitative explanation (expression in terms of quantity

IC does not increase that much.


IC is less dependent on hFE and
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temperature.
Voltage-divider bias characteristics. (2)
28
+VCC VCC
Load line I =
equations: C (sat ) RC + RE
VCE (off ) = VCC

IC RC
I1 R1 Q-point equations (assume
that hFERE > 10R2):
IB R2
Output VB = VCC
R1 + R2
Input VE = VB − 0.7V
I2 R2 VE
IE RE I CQ  I E =
RE
VCEQ = VCC − I CQ ( RC + RE )

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Collector-feedback bias.
29

+VCC VCC = ( I C + I B ) RC + I B RB + VBE


VCC − VBE
IB =
(hFE + 1) RC + RB
RC
RB
ICQ = hFE I B

VCEQ = VCC − ( hFE + 1) I B RC


IC
IB
 VCC − I CQ RC

IE

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Example 7.
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+10 V Determine the values of ICQ and VCEQ

VCC − VBE
IB =
RC RB + ( hFE + 1) RC
1.5 k
10V − 0.7V
RB = = 28.05μA
180kΩ + 1011.5kΩ
180 k I CQ = hFE I B = 100  28.05μA

hFE = 100 = 2.805mA


VCEQ = VCC − (hFE + 1) I B RC
= 10V − 101 28.05μA 1.5kΩ
= 5.75V
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Circuit Stability of
Collector-Feedback Bias
31

+VCC hFE increases

IC increases (if IB is the same)


RC
RB VCE decreases

IC
IB
IB decreases

IE
IC does not increase that much.
Good Stability. Less dependent
on hFE and temperature.

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Collector-Feedback Characteristics (1)
32

+VCC
Circuit recognition: The base
resistor is connected between
the base and the collector
RC terminals of the transistor.
RB Advantage: A simple circuit
with relatively stable Q-point.
IC Disadvantage: Relatively poor
IB
ac characteristics.
Applications: Used primarily to
IE bias linear amplifiers.

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Collector-Feedback Characteristics (2)
33

+VCC Q-point relationships:

VCC − VBE
IB =
(hFE + 1) RC + RB
RC
ICQ = hFE I B
RB
VCEQ  VCC − ICQ RC
IC
IB

IE

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Emitter-feedback bias
34

+VCC VCC − VBE


IB =
RB + ( hFE + 1) RE

ICQ = hFE I B
RB RC
IC

I E = ( hFE + 1) I B
IB

VCEQ = VCC − I C RC − I E RE
 VCC − I CQ ( RC + RE )
IE RE

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Example 8.
35

+VCC
VCC − VBE 16V − 0.7V
IB = =
RB + ( hFE + 1) RE 680kΩ + 511.6kΩ
= 20.09μA
RB RC ICQ = hFE I B = 50  20.09μA = 1mA
680k 6.2k
VCEQ  VCC − I CQ ( RC + RE )
= 16V − (1mA )( 7.8kΩ ) = 8.2V
hFE = 50

RE
1.6k

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Circuit Stability of Emitter-Feedback Bias
36

+VCC hFE increases

IC increases (if IB is the same)

RB RC
IC VE increases

IB
IB decreases

IE RE
IC does not increase that much.
IC is less dependent on hFE and
temperature.

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Emitter-Feedback Characteristics (1)
37

+VCC
Circuit recognition: Similar to
voltage divider bias with R2
missing (or base bias with RE
added).
RB RC
IC
Advantage: A simple circuit
with relatively stable Q-point.
IB
Disadvantage: Requires more
components than collector-
feedback bias.
IE RE Applications: Used primarily to
bias linear amplifiers.

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Emitter-Feedback Characteristics (2)
38

+VCC
Q-point relationships:

VCC − VBE
IB =
RB + (hFE + 1) RE
RB
IC
RC
ICQ = hFE I B

IB
VCEQ  VCC − I CQ ( RC + RE )

IE RE

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Improved Biased Stability
39

Stability refers to a condition in which the currents and


voltages remain fairly constant over a wide range of
temperatures and transistor Beta () values.

Adding RE to the emitter improves


the stability of a transistor.

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Switching Circuit Calculations
40

Saturation current:
VCC
ICsat =
RC

To ensure saturation:
ICsat
IB 
βdc

Emitter-collector
resistance at VCEsat VCC
Rsat = Rcutoff =
saturation and cutoff: ICsat ICEO
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Phân giải gần đúng:
Giả sử I2 >> IB khi đó I1 ≈ I2, các giá trị dòng điện và điện áp sẽ được tính theo các công thức sau:
R2
VB = VCC
R1 + R2
VE = VB − 0.7V
V
IE = E
RE
Với hFE lớn (hFE >>1) thì IC ≈ IE,
VCE = VCC − I C ( RC + RE )
Điều kiện I2 >> IB được chấp nhận khi R > 10R .
E 2
Thật vậy:
Với RE > 10R2 → VE/IE >10 VB/I2 → VB/IB > 10 VB/I2 → I2 > 10 IB

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EXAMPLE
Determine the exact and the approximate dc bias voltage VCE and the
current IC for the following voltage-divider configuration:

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43 Basic Electronics 2023

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