PM SHRI KENDRIYA VIDYALAYA

BAMBOLIM CAMP, GOA.

A Project Report On
To study the variations in resistance in a circuit
containing a LDR.

For
AISSCE 2024 Examination
[As a part of Physics course]

SUBMITTED BY
SURYA NARAYAN S
[Roll No: ]

Under the Guidance of:

Mrs. Benit Sera Boben
 CERTIFICATE

This is to certify that the project/ Dissertation entitled

‘To study the variations, in current flowing in a circuit
containing a LDR.’ is a bonafide work done by Master
Surya Narayan S of class XII Session 2023-24 in partial
fulfillment of CBSE’s AISSC Examination (All India Senior
Secondary Certificate Examination) 2023-24 and has
been carried out under my direct supervision and
guidance. This report or similar report on the topic has
not been submitted for any other examination and does
not form a part of any other course undergone by the
candidate.

________________ _____________________
Signature Of Student Signature Of Teacher/Guide
Name: Surya Narayan S Name: Mrs. Benit Sera Boben
Roll No:

________________________

Signature of External Examiner

 ______________________
Signature Of Principal
Name: Mr. Bidhan Chandra Singh

ACKNOWLEDGEMENT
I undertook this project work as a part of my XII physics
course. I have tired to apply my best of knowledge and
experience, gained during the study and classwork experience.
However, performing investigatory project is time consuming
process. It requires a systematic study, insight vision and
professional approach during the implementation of the
procedure. Moreover, the students always feel the need the
help and good wishes of the people near you, who have
considerable experience and idea.
I would like to extend my sincere thanks and gratitude to my
Physics teacher Mrs. Benit Sera Boben and my Work
Education sir Mr. A K Roy. I am very much thankful to our
Principal Mr. Bidhan Chandra Singh for giving valuable
time and moral support to implementing this project.
I would like to take the opportunity to extend my sincere
thanks and gratitude to my father Mr Suresh Kumar S and my
mother Mrs Sheeja S for being a source of inspiration and
providing time and freedom to implement this project.
 INDEX
1. Introduction
2. Application
3. Aim
4. Materials Required
5. Theory
6. Circuit Diagram
7. Observations
8. Result and Conclusion
9. Sources of error
10. Photographs
11. Bibliography
 INTRODUCTION
A photoresistor or light dependent resistor is a component
that is sensitive to light. When light falls upon it. Then the
resistance changes. Values of the resistance of the LDR may
change over many orders of magnitude, the value of the
resistance falling as the level of the light increases.
It is not common for the values of resistance of an LDR or
photoresistor to be several mega ohms in the darkness and
then to fall to a few 100 ohms in bright light. With such a wide
variation in resistance, LDR are very easy to use and there are
many LDR circuits available. The sensitivity of light dependent
resistors or photo registers also varies with the wavelength of
the incident light.
LDR are made from semiconductor materials. To enable them.
To have their light sensitive properties many materials can be
used, but one popular material for this photo resistors is
cadmium sulphide CdS.
Type of Photo Resistor.
Light Dependent resistors or photo resistors fall into one of the
2 types or categories:
 Intrinsic Photoresistor: Intrinsic photo resistors use undocked
semiconductor material, including silicon or germanium.
Photons fall on the LDR excite electron, moving them from the
valence band to the conduction band. As a result, these
electrons are free to conduct electricity. The more light that
falls on the device, the more electrons are liberated and the
greater the level of the conductivity, and this result in a lower
level of resistance.
 Extrinsic Photo Resistors: Extrinsic photo resistors are
manufactured from semiconductors of material doped with
impurities. These impurities are dopants create a new energy
band above the existing balance band. As a result of electrons
need less energy to transfer to the conduction band because
of the smaller energy gap.
Regardless of the type of light dependent resistor or
photoresistor, both type exhibit and increase in conductivity or
fall in resistance with increasing levels of incident light.
LDR symbol.
The LDR symbol used in a circuit is based around the register
circuit symbol but shows the light, informs of arrow shining on
it. In this way it follows his same convention used for
photodiode and phototransistor circuit symbols. Where arrows
are used to show the light falling on this component.
Circuit symbols used for the light dependent resistor or photo
resister, The light dependent resistor or photo resistor circuit
symbols. Are shown for both the newer style register symbol
that is a rectangular box and the older zigzag line register
circuit symbols.

APPLICATIONS
Lead sulfide (PbS) and indium antimonide (InSb) LDRs are used
for the mid infrared spectral region. GeCu photoconductors
are among the best far-infrared detectors available and are
used for infrared astronomy and infrared spectroscopy.
Analog Applications
 Camera Exposure Control
 Auto Slide Focus - dual cell
 Photocopy Machines - density of toner
 Colorimetric Test Equipment
 Densitometer
 Electronic Scales - dual cell
 Automatic Gain Control – modulated light source
 Automated Rear View Mirror
Digital Applications
 Automatic Headlight Dimmer
 Night Light Control
 Oil Burner Flame Out
 Street Light Control
 Position Sensor
 LDR has a disadvantage that when its temperature changes, its
resistance changes drastically for a particular light
intensity.

AIM AND APPARATUS

AIM:
To study the variations in resistance in a circuit by varying the
power of the incandescent lamp, used to ‘illuminate’ the LDR.
(Keeping all the lamps at fixed distance.)

APPARATUS:
1. Light Dependent Resistor (LDR)
2. Connecting Wires
3. Filament Bulb
4. Bulb Holder
5. Multi Meter
6. Battery Eliminator
7. Regulator
8. AC Current Source
9. Plug Key
 THEORY
LDR and its characteristics
When light is incident on it, a photon is absorbed and thereby
it excites an electron from valence band into conduction band.
Due to such new electrons coming up in conduction band area, the
electrical resistance of the device decreases. Thus the LDR or
photo-conductive transducer has the resistance which is the
inverse function of radiation intensity.
hc
λ 0=
ⅇ Eω
Here we must note that any radiation with wavelength greater
than the value obtained in above equation CANNOT PRODUCE any
change in the resistance of this device. The band gap energy
of Cadmium Sulphide is 2.42eV and for Cadmium Selenide it
is1.74eV. Due to such large energy gaps, both the materials
have extremely high resistivity at room temperature such large
energy gaps, both the materials have extremely high resistivity
at room temperature.
Characteristics of photoconductive cells
Now when the device is kept in darkness, its resistance is
called as dark resistance. This resistance is typically of the order of
10^13 ohms. When light falls on it, its resistance decreases up
to several kilo ohms or even hundreds of ohms, depending on the
intensity of light, falling on it. The spectral response
characteristics of two commercial cells were compared in our
laboratory. And we found that there is almost no response to
the radiation of a wavelength which was shorter than 300nm.
It was very Interesting to note that the Cadmium Sulphide cell has
a peak response nearer or within the green colour of the spectrum
within a range of 520nm.Thus it can be used nearer to the infra-
red region up to 750nm. It was found that the maximum
response of Cadmium Sulphoselenide is in the yellow-orange range
at 615nm and also it can be used in the infra-red region up to
about 970nm.

Sensitivity:
The sensitivity of a photo detector is the relationship between
the light falling on the device and the resulting output signal.
In the case of a photocell, one is dealing with the relationship
between the incident light and the corresponding resistance
of the cell.
Spectral response
Like the human eye, the relative sensitivity of a
photoconductive cell is dependent on the wavelength (colour)
of the incident light. Each photoconductor material type has
its own unique spectral response curve or plot of the relative
response of the photocell versus wavelength of light.
 Relative Response
V/S Wavelength

CIRCUIT DIAGRAM
 PROCEDURE
1.Connect the Battery eliminator, LDR, Plug Key
and a Multi-meter in Series.
2.Take a regulator and connect it with the Bulb
holder and connect it to the AC current source.
3.Take a Cardboard box and attach the bulb
inside the box, also add the LDR circuit inside
the box to maintain darkness.
4.Put the bulb and turn on the Turn on the Bulb.
5.Note down the values shown in the resistance
section of multi-meter.

OBSERVATIONS
Sr No. Marking in the Regulator Resistance
1 1 255 ohms
2 2 214 ohms
3 3 194 ohms
4 4 143 ohms
5 5 86 ohms

CONCLUSION AND RESULTS

1. The LDR resistance decreases with increase in intensity of
light and hence there is an increase in the flow of current.
2. There is an increase in the current as the distance from
the source decreases.
3. The intensity decreases as the distance from the source
increases.

SOURCES OF ERROR
1. The LDR may not be perpendicular to the source.
2. Connections may be faulty.
3. The experiment should be conducted in a dark room.
4. Measurements should be taken accurately.

PHOTOGRAPHS
 BIBLIOGRAPHY
1.NCERT Physics
2.www.technologystudent.com/elec1/ldr 1.htm
3.www.electrical4u.com/light-dependent-resistor-
ldr-working-principle-of-ldr /