Please answer all the questions. Each question carries 10 Marks.

Q1. Consider a Metal-semiconductor junction on a lightly doped

semiconductor. Without prior knowledge about the doping variation in the
semiconductor (uniform, linearly graded etc.,), the doping variation in the
substrate can be deduced directly from the C-V data. Writing all the
intermediate mathematical steps, show that the doping concentration versus
distance of the above junction can be written in the following form.
!
𝑁! 𝑥 =
!!! !! !! ! !/!!! /!!!

where x is the distance into the lightly doped part of the semiconductor as
measured from the M-S junction, Cj is the measured junction capacitance, Va
is the applied voltage and A is the junction area.

Q2. The following measurements are obtained on a metal-semiconductor

junction. Using a least squares fit, find the values of built-in potential, doping
concentration of the semiconductor and Schottky barrier height. Assume the
area of the junction 𝐴 = 1.5×10!! 𝑐𝑚! .

Reverse voltage (Volts) 1/𝐶 ! 10!" /𝑓𝑎𝑟𝑎𝑑 !

1.09 0.953
2.08 1.494
3.07 2.035
4.06 2.579
5.05 3.125
6.04 3.673
7.03 4.217
8.02 4.763
9.01 5.320
10.00 5.810

Q3. We know that it is possible to make a silicon MOS capacitor with metal-
work function difference Φ!" = 0 by choosing appropriate gate material and
silicon doping. Let us assume that the silicon doping is limited to the following
range: 10!" 𝑐𝑚!! ≤ 𝑁! ≤ 10!" 𝑐𝑚!! . Assuming T = 300 K, using the gate
material information given in the table, find one gate-material/doping
concentration combination that gives Φ!" = 0.

Barrier height differences in select Metal-

Oxide-Silicon structures
Gate Material (Φ! − 𝜒)  𝑒𝑉
Ag 1.494
Au 2.035
Cr 2.579
Cu 3.125
Mg 3.673
Sn 4.217
Q4. Consider the cross-section of a MOSFET with the associated parameters
required for the short-channel effect analysis. Assume that the charge in the
shaded regions are contributed by the source and drain side depletion
regions. Assume that the transistor is biased in linear region of operation.
Using geometrical approach, first find the charge under the gate in the
trapezoidal region. Provide the intermediate steps in your analysis. Using this
charge show that the change in threshold voltage due to short-channel effects
can be written as
𝑞𝑁! 𝑊! 𝑟! 2𝑊!
∆𝑉! = − 1+ −1
𝐶!" 𝐿 𝑟!

Q5 (a) Using the small signal model of a MOSFET, derive a model which
shows that the cut-off frequency of a short-channel MOSFET is directly
proportional to the saturation velocity of charge carriers in the inversion layer.

Q5 (b) Using a band diagram, explain the reason for the variation in drain
current for gate voltages less than zero in the transfer characteristics of a
MOSFET shown below.