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datasheet s190 seiko eeprom
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Date uploaded
Jan 12, 2018
Original Title
s29190 datasheet
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Contents
Ordering Information .......................................... 12
Characteristics .................................................... 13
Frequently Asked Questions .............................. 18
2
The S-29530A / 630A series are low power 16K / 32K-bit E PROM with
a low operating voltage range. They are organized as 1024-word ×16-bit
and 2048-word×16bit, respectively. Each is capable of sequential read,
at which time addresses are automatically incremented in 16-bit blocks.
Features
Low power consumption Endurance : 10 6 cycles/word
Standby : 1.0 µA Max.
Data retention : 10 years
Operating : 1.2 mA Max. (VCC=5.5 V)
: 0.4 mA Max. (VCC=2.5 V)
Pin Assignment
8-pin DIP
Top view 8-pin SOP2
Top view
CS 1 8 VCC 1 8
CS VCC
SK 2 7 NC
SK 2 7 NC
3 6 TEST
DI
DI 3 6 TEST 4 5 GND
DO
DO 4 5 GND
* See Dimensions
Figure 1
Pin Functions
Table 1
___
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Block Diagram
Address VCC
Memory array
decoder GND
SK Clock generator
Figure 2
Instruction Set
Table 2
Table 3
Parameter Symbol Ratings Unit
Power supply voltage VCC -0.3 to +7.0 V
Input voltage VIN -0.3 to VCC+0.3 V
Output voltage VOUT -0.3 to VCC V
Storage temperature under bias T bias -50 to +95 °C
Storage temperature T stg -65 to +150 °C
Pin Capacitance
Table 5
(Ta=25 °C, f=1.0 MHz, VCC=5 V)
Parameter Symbol Conditions Min. Typ. Max. Unit
Input Capacitance CIN VIN=0 V 8 pF
Output Capacitance COUT VOUT=0 V 10 pF
Endurance
Table 6
Parameter Symbol Min. Typ. Max. Unit
Endurance NW 106 cycles/word
DC Electrical Characteristics
Table 7
Parameter Smbl Conditions V CC=4.5 V to 5.5 V VCC=2.5 V to 4.5 V VCC=1.8 to 2.5 V Unit
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Current
consumption ICC1 DO unloaded 1.2 0.5 0.4 mA
(READ)
Current
consumption ICC2 DO unloaded 5.0 2.0 1.5 mA
(PROGRAM)
Table 8
Parameter Smbl Conditions V CC=4.5 V to 5.5 V VCC=2.5 to 4.5 V VCC=1.8 to 2.5 V Unit
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Standby current CS=GND DO=Open
ISB 1.0 1.0 1.0 µA
consumption Connected to VCC or GND
Input leakage
ILI VIN=GND to VCC 0.1 1.0 0.1 1.0 0.1 1.0 µA
current
Output leakage
ILO VOUT=GND to VCC 0.1 1.0 0.1 1.0 0.1 1.0 µA
current
Low level output
VOL CMOS IOL= 100µA 0.1 0.1 V
voltage
CMOS
High level output
VOH Vcc=2.5 to 5.5V:IOH= -100µA VCC-0.7 VCC-0.7 VCC-0.3 V
voltage
Vcc=1.8 to 2.5V:IOH= -10µA
Write enable latch Only when write
VDH 1.5 1.5 1.5 V
data hold voltage disable mode
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