Lab Report

BJT
EC 251
Harsh Kumar
22 October 2022

Experiment No: 3
Name of the experiment : To design a BJT in VisualTCAD

Date Performed: 22 October 2022

Performed by: Harsh Kumar
Roll No : B21EC036
Instructor: Dr. Shubhankar Majumdar

Department Of Electronics and Communication Engineering

National Institute Of Technology, Meghalaya

Shillong-793003

1
1 OBJECTIVE
To construct a Bipolar junction Transistor and find its Input and Output I-V
characteristics and C-V characteristics using TCAD tool.

2 Working principle of A Transistor

A bipolar junction transistor is a three-terminal semiconductor device that con-
sists of two p-n junctions which are able to amplify or magnify a signal. It is
a current controlled device. The three terminals of the BJT are the base, the
collector, and the emitter. A signal of a small amplitude applied to the base is
available in the amplified form at the collector of the transistor.

BJT have two junctions formed by the combination of two back

to back PN junctions. Base-Emitter junction (BE) is forward bias
while collector-emitter junction (CE) is reverse bias. At BE junc-
tion, the potential barrier decreases with forward bias. So, electron
start flowing from emitter terminal to base terminal. As the base
is lightly doped terminal, so very little number of electrons from
emitter terminal combine with holes in base terminal. Due to com-
bination of electrons and holes, current from base terminal will start
flowing known as Base current (ib). Base current is only 2
ie = ib+ic
Where ie is approximately equal to ic because Ib is almost 2
BJT can operate in three different regions to perform the said op-
eration.
Active Region: In Active region, one of the junctions is in a forward
bias while the other is in reverse bias. Here, the base current Ib can
be used to control the amount of collector current Ic. Therefore, the
active region is used for amplification purposes where the BJT acts
as an amplifier with a gain using the equation;
ic = x Ib
It is also known as linear region. This region is in between the
cutoff region and the saturation region. The normal operation of
BJT occurs in this region.
Saturation Region: In saturation region, both of the junctions of
the BJT are in forward bias. This region is used for the ON-state
of a switch where;
ic = is at

2
Isat is the saturation current it is the maximum amount of current
flowing between emitter and collector when BJT is in saturation
region. Since both junctions are in forward bias so, BJT acts as a
short circuit.
Cutoff Region: In cutoff region, both junctions of a BJT are in
reverse bias. Here the BJT work as off state of a switch where
ic = 0
The operation in this region is completely opposite to the saturation
region. There are no external supplies connected. There’s no collec-
tor current and hence no emitter current. In this mode, transistor
acts as an off-state of the switch. This mode is achieved by reducing
base voltage less than both emitter and collector voltage.
Vb e ¡ 0.7

3 Steps for simulation

• First the Tcad application Window is open in terminal.
• the scripting code is written in text format in the Tcad appli-
cation and saved in inp.extension file.
• Afte genrating the file a terminal window is open inside the
folder wher the inp. file is present.
• The file is executed by running the command ”genius -n 4-i file
name.inp.” Then the dvt,cgns and other files will be generated
automatically after the execution of code is over.
• the required characteristics graph are obatined and plotted in
the Tcad application
• the results obtained from the applications are noted down.
• for the genration of differen models of the diagram the cgns file
is open and the draw options is selected from the dialog box.

3
 Figure 1: scripting-1

Figure 2: scripting-1

4 Simulation Results and Conclusions

We have created the pn diode using TCAD software and obtain

the graph that has been plotted for input output and transfer
characteristics in common emitter condition.

5 Discussion on Simulation

The simulation process enables us to create the device starting

with two pieces of intrinsic semiconductor material and doping
them appropriately to create P-N junction of required choice.
While creating the device, changes can be observed in energy
bands and fermi level as a response of doping . The device once
created can be incorporated into circuits, where I-V character-
istics can be observed in response to the changes in applied
voltage.

4
 Figure 3: scripting-1

Figure 4: BJT CGNS

6 What I have learnt from this experiment.

– I have learnt about the Application of TCAD in designing
semi conductor device.
– I have seen and found out how the depletion width varies
on increasing the doping concentration through visuals.
– Moreover we obtain the precise input ,output and transfer
characteristics of bjt which is nearly the same as the graph
obtain by ploting the pratical data

5
 Figure 5: BJT Mesh profile

Figure 6: Output charcteristics

Figure 7: Input characteristics

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Figure 8: Transfer characteristics