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1. In a solid, the constituent particles are very closely packed. Hence the forces of attraction among these
particles are very strong. Moreover, the constituent particles in solids have fixed positions and only
oscillate about their mean positions. Hence, they are rigid.
2. As the solid has same value of refractive index along all directions, this means that it is isotropic and
hence amorphous. Being an amorphous solid, it would not show a clean cleavage when cut with a knife.
Instead, it would break into pieces with irregular surfaces.
3. The constituent particles of a solid have fixed positions and are not free to move about, i.e. they possess
rigidity. That is why they have a definite volume. 4. Number of atoms in the close packing = 0.5 mol
= 0.5 × 6.022×1023 = 3.011×1023
Number of octahedral voids = Number of atoms in the packing = 3.011×1023
Number of tetrahedral voids = 2 × Number of atoms in the packing = 2×3.011×1023 = 6.022×1023
Total number of voids = 3.011 10 23 + 6.022×1023 = 9.033 ×1023.
5. Suppose the atoms of N in the ccp = n, Number of tetrahedral voids = 2 n
2n
As 1/3rd of the tetrahedral voids are occupied by atoms M, therefore, number of atoms M =
3
2n
Ratio of M : N = : n = 2 : 3 Hence, the formula is M2N3 .
3
ZM a3 NA
6. Density, = or Z = … (i)
a3 NA M
9. Taking the example of NaCl, when its crystals are heated in presence of sodium vapour, some chloride
ions leave their lattice sites to combine with sodium to form NaCl. For this reaction to occur, Na atoms
lose electrons to form Na+ ions. The electrons thus released diffuse into the crystal to occupy the anion
vacancies created by Cl– ions. The crystal now has excess of sodium. The sites occupied by unpaired
electrons are called F-centres. They impart yellow colour to the crystal because they absorb energy from
the visible light and get excited.
10. Ferromagnetic substances make better permanent magnets. This is because the metal ions of a
ferromagnetic substance are grouped into small regions called ‘domains’. Each domain acts as a tiny
magnet. These domains are randomly oriented. When the substance is placed in a magnetic field, all the
domains get oriented in the direction of magnetic field and a strong magnetic field is produced. This
ordering of domains persists even when the external magnetic field is removed. Hence, the ferromagnetic
substance becomes a permanent magnet.
11. Glass is an amorphous solid in which the constituent particles (SiO4 tetrahedra) have only a short range
order and there is no long range order. In quartz, the constituent particles (SiO4 tetrahedra) have short
range as well as long range order. On melting quartz and then cooling it rapidly, it is converted into
glass.
12. Ionic = (NH4)3PO4 and LiBr; Metallic = Brass, Rb ; Molecular = P4O10, I2 , P4 ; Network (covalent)
= Graphite, SiC, Si ; Amorphous = Plastics.
13. (a) Higher the melting point, greater are the forces holding the constituent particles together and
hence greater is the stability.
(b) The intermolecular forces in water and ethyl alcohol are mainly the hydrogen bonding. Higher
melting point of water than alcohol shows that hydrogen bonding in ethyl alcohol molecules is
not as strong as in water molecules. Diethyl ether is a polar molecule. The intermolecular
forces present in them are dipole-dipole attraction. (London dispersion forces).
14. As atoms Y are present at the 8 corners of the cube, therefore, number of atoms of Y in the unit cell
= 1/8 × 8 = 1
As atoms X are present at the body centure, therefore, number of atoms of X in the unit cell = 1
Ratio of atoms X : Y = 1 : 1. Hence, the formula of the compound is XY
MZ 93g mol –1×2
15. a3 = = = 3.61×107 = 36.1×106
N 0 10 30 8.55g cm –3× 6.02 ×1023 mol –1×10 –30
94
% of Ni as Ni2+ = 100 95.92% and % of Ni as Ni3+ = 100 – 95.92 = 4.08 %
98
ZM
17. For fcc lattice of copper, Z = 4 Atomic mass of copper, M=63.5 g mol-1
a3 N0
4 63.5 g mol 1
8.97 g cm 3
(3.61 10 8 cm)3 (6.022 1023 mol 1 )
which is in close agreement with the measured value.
18. The ratio less than 2 : 1 in Cu2O shows that some cuprous (Cu+) ions have been replaced by cupric
(Cu2+) ions. To maintain electrical neutrality, every two Cu+ ion thereby creating a hole. As conduction
will be due to presence of these positive holes, hence it is a p- type semiconductor.
19. Suppose the number of oxide ions (O2–) in the packing = n.
Number of octahedral voids = n.
As 2/3rd of the octahedral voids are occupied by ferric ions, therefore, number of ferric ions present
2 2n
n
3 3
2n
Ratio of Fe3+ : O2– = :n = 2 : 3
3
Hence, the formula of ferric oxide is Fe 2O3.
20. (i) Ge is Group 14 element and In is Group 13 element. Hence, an electron deficit hole is created
and therefore, it is p-type,
(ii) B is Group 13 element and Si is Group 14 element. there will be a free electron. Hence, it is n-
type.
21. For FCC, a = 2 2r 2 1.414 0.144 nm 0.407 nm
22. (i) The energy gap between the valence band and conduction band in an insulator is very large
whereas in a conductor, the energy gap is very small or there is overlapping between valence
band and conduction band.
(ii) In a conductor, there is very small energy gap or there is overlapping between valence band and
conduction band but in a semiconductor there is always a small energy gap between them.
10 3
1 mole of NaCl is doped with SrCl2 mole = 10–5 mole
100
As each Sr2+ ion introduces one cation vacancy, therefore, concentration of cation vacancies = 10–5
mol/mol of NaCl = 10–5 × 6.02 × 1023 mol–1 = 6.02 × 1018 mol–1
25. (a) The number of atoms of Carbon per unit cell is 8 in diamond.
(b) The C—C bond is very strong in diamond (due to small size of Carbon) unlike the Zn—S bond in
ZnS.
(c) Though from the same background i.e. with the same structure the property can be different,
thus, with a little effort, we can do same things differently and bring about major changes.
17.(A)
AE 7.2Å AB BC CD DE
r r r r 2(r r )
x M M x x M
18.(D) The arrangement ABC ABC ABC ………….. packing of identical spheres forms cubic close packing.
19.(C) Coordination number of Al in AlCl3 in (solid) crystalline state is 6.
r
20.(C) When coordination number is eight, the radius ration lies between 0.732 to 1.000.
r
21.(A) Since, HI is a covalent molecule and crystallizes in face centred cubic (fcc) structure, HI molecules are
present at the lattice points of the crystal.
22.(A) ZnS has zinc blende type structure (i.e., ccp structure). The S2 ions are present at the corners of the
cube and at the centre of each face. Zinc ions occupy half of the tetrahedral sites. Each zinc ion is
surrounded by four sulphide ions which are placed towards the corners of regular tetrahedron. Similarly,
disposed towards the corner of regular tetrahedron. Similarly, S2 ion is surrounded by four Zn2+ ions.
1
23.(D) A occupies corners, thus number of A atoms per unit cell = 8 1
8
1
B occupies face centres, thus number of B atoms per unit cell = 6 3
2
24.(D) S2– ions in zinc blende occupies fcc lattice points
The empirical formula of the compound is AB3.
25.(B) There is increase in 0.30Å unit length. This is due to two atoms at the corners.
0.30Å
Thus, r 1.33Å 1.48Å
Rb 2
1
26.(A) Since A atoms are present at the corners of the cube, Number of A atoms per unit cell = 8 1
8
Number of B atoms per unit cell = 1 ( Present at the body centre of the cube)
Hence, the formula of the compound = AB
27.(B) Since atom X is present at corner and one corner is shared by eight unit cells, Number of X atoms per
1
unit cell = 8 1 .
8
Atom Y is present at body centered position and used by only one unit cell. So, number of Y atoms per
unit cell = 1.
Atom Z is present at the centre of each face, so shared by two unit cells, thus, numbers of Z atoms per
1
unit cell = 6 3.
2
Hence, the formula of compound = XYZ3
28.(D) For BCC structure
4 3a
3 4.29 o
r 1.86 A
4
29.(C) 40g N A atoms 4g 0.1 N A atoms
(D) A larger anion B is in interstitial position. No such crystal exists in which larger anion B is in
interest site-thus incorrect.
ZM 4 21.76
46.(A) d 0.6708 g cm 2
a 3N A 6.8 10 8 4.4 10 8 7.2 10 8 6.023 10 23
47.(A) Given, r /r 0.55 ; r /r 0.74
Na Cl K Cl
rKCl
?
rNaCl
r
Na 0.55
r
Cl
r
Na 1 0.55 1
r
Cl
r r
Na Cl
1.55
r
Cl
r
K 0.74
r
Cl
r
K 1 0.74 1
r
Cl
r r
K Cl 1.74
r
Cl
r r 1.74
Eq. (ii) divide by Eq. (i) K Cl
1.1226 .
r r 1.55
Na Cl
48.(D) There are four body diagonals. Atoms on the body diagonals are not shared by any other unit cell.
1
Contribution by atoms on corners = 8 1 and Contribution by atoms on body diagonal = 2 × 4 = 8
8
Hence, total number of atoms = 9
49.(B) Given,
Molar mass, M = 50g/mol
NA = 6.02 × 1023
Z = 2 (for bcc crystal)
Edge length a = 300 pm = 3 10 8 cm
Z M 2 50
d = 6.15 6.2
3 3
NA a
6.02 1023 3 10 8
ZM
50.(A) Density ()
a 3 N0
Z 27
2.7
10 3
(405 10 ) 6.023 1023
2.7 (405)3 10 30 6.023 1023
Z 4 = no. of atoms per unit cell.
27
For face centred cubic unit cell, number of atoms are 4.
70.(C) The lines joining the centres of the anions form an equilateral triangle with angle = 60°
b rX
Thus, sin 60 0.866
a rX rM
rX 0.866 rX 0.866 rM
0.134rX 0.866 rM
rM 0.134
0.155
rX 0.866
71.(A) Each atom touches four atoms in the layer above it, four in the layer below it and none in its own layer.
72.(B) The arrangement ABC ABC ABC ………….. packing of identical spheres forms cubic close packing.
73.(A) In ccp arrangement for every atom there is one octahedral void and two tetrahedral voids.
74.(B) Radius ratio CN
r
0.414 0.732 6
r
r
0.732 1.00 8
r
Hence use the radius ratio of 0.732 corresponding to the said change over from CN of 6 to CN of 8.
o
Hence cation size is 0.732 1.8 1.3176 A .
75.(D) For BCC, 3a 4r
3 351
r 152 pm
4
Thus, both Statement I and II are correct and Statement II is the correct explanation of Statement I.
79.(B) The formula M0.98O shows that
M : O = 0.98 : 1 = 98 : 100
Then, if there are 100, O2– atoms, then M atoms = 98
Charge on 100 O2– ions = 100 × (–2) = –200
These domains are oppositely and cancel out each other magnetic moment and making it zero (even in
the absence of magnetic field).
81.(B) Semiconductors have small energy gap between conduction band and valence band.
On increasing temperature, electron from valence band can jump to
conduction band and thus, electrical conductivity is increased. Thus, both
Statement I and II are correct but Statement II is not the correct explanation
of Statement I.
zM
82.(B) Thus, density can be determined using d
a 3N0
3.996 40
d(with Vaccance defect) 1.5448 g / cm 3
(0.556 10 7 )3 (6.02 1023 )
83.(B) Nearest neighbours are present at a distance “a” while next nearest neighbours are present at a distance
of a 2 .
Paramagnetic due to four unpaired electron (n) and magnetic moment n(n 2)BM
n = 0, Magnetic moment = 0
Thus, (a) is correct.
(b) Paramagnetic substance can be magnetized permanently, field in
the same direction hence, weakly attracted thus, (b) is correct
(c) Ferromagnetic substance can be magnetized
permanently, thus, given statement is incorrect.
94.(D) Frenkel’s defect is due to shift of an ion from the normal lattice site (Creating a vacancy) and occupy
interstitial spaces.
2
95.(C) Distance between two layers (2R ) (See illustration 10)
3
2 2 13
Hence k (2R ) 13 R k
3 3 2
For maximum no. of layers, the answer is 7.
1 1 1 1
No. of A atoms 4 No. of B atoms 2 1 No. of C atoms 4 1 1 2
8 2 2 4
The simplest formula is : AB2C4
100.(ACD) In spinel O 2 froms FCC unit cell where Mg2+ is present in tetrahedral voids and Al3+ is present in
two octahedral voids. So 50% octahedral voids are occupied and 1/8th i.e. 12.5% tetrahedral voids
are occupied.
1
101.(B) No. of A atoms 8 1
8
1 1
No. of B atoms 2 12 4
2 4
[Refer objective Worksheet-7]
1
No.of C atoms 4 (1 4) 6
2
The formula of given solids is AB4C6
102.(A) Case I : If tetrad axis passes through the face centres were B lies, then :
1
No. of B atoms 4 2 3
2
The formula of compounds left is AB3C6
Case II : If tetrad passes through the face centres where C lies, then
1
No. of C atoms left 6 2 5
2
The formula of compound left is AB4C5
103.(A) There are 8 effective tetrahedral voids out of which 4 are occupied (one at each body diagonal) and 4
effective octahedral voids such that one is not filled (body centre). So, 7 out of 12 are filled i.e. 58%
104.(A) Si has FCC structure and Si atoms are present in alternate tetrahedral voids. So the total number of
atoms = 8
(no. of atoms) (mass of one atom)
density
volume of unit cell
8 (28.08 1.66 10 27 ) kg
density 2330kgm 3
(5.43 10 10 )3 m 3
rc 1.22
105.(B) 0.976 Hence Ga lines in Body centred or Cubic void where
ra 1.25
3a 2(rc ra ) a 2.852
r
106.(B) Zn 2 0.44
rS2
With a radius ratio of 0.44, one might expect the Zinc (II) ions to occupy octahedral voids : however, the
r
value of 0.44 is only slightly larger than hole 0.414 for an octahedral hole. There is also some
r
covalent character in the Zn 2 S2 interaction, which tends to shorten the inter atomic distance.
Experimentally, one find that the Zinc (II) ions occupy tetrahedral holes.
3a
r 2 r 2 a 5.635Å
4 Zn s
109.(A) Look at corner atom of FCC unit cell. A corner atom can support 8 unit cell. In each cube, at a distance
3
of a from corner atoms, there is a tetrahedral void, it implies each atom is surrounded by eight
4
tetrahedral voids. At the centre of edge there is an octahedral void. Each corner can support six edges
and hence it is surrounded by six octahedral voids.
110.(C) The next nearest neighbours to Cs+ are Cs+ of neighbour unit cell which are 6 in number.
0.015
111.(C) The volume available
7.5 10 3
0.015
(no. of unit cells) [400 10 12 ]3 no. of unit cells 3.125 10 22
7.5 103
abc 2
112.(B) Ratio
3 3 3
6 a2 c
4
c 2 2
Note : for an ideal HPC (see illustration 10)
a 3
Na
113.(D) No. of atoms Na No. of unit cells [ 4 atoms in each unit cell]
4
Na 6.023 1023
Volume of 1 mole lattice (400 10 12 )3 m 3 9.64 mL
volume of unit cell
4 4
114.(B) A tetrahedral void in FCC is formed by 3 face centre atoms and one corner atom. In total, 8 such
tetrahedrons are possible (Refer section – 8).
(No.of formula units) [Molecular weight of compound] 1.67 10 27 kg
115.(D) density
Volume of unit cell
24
2[2 24 16] 1.67 10 gm
d 4 62 1.67 g / cc 414.16g / cc
8 3
(10 cm)
Note: Frenkel defects do not change the density of the crystal
r 1.69
116.(AC) Cs 0.867
r 1.95
Br
Hence Cs+ lies in the “body centre or cubic void” where co-ordination no. of Cs+ is 8.
CsBr has BCC type structure with Br forming simple cubic lattice and Cs in the void. Let edge
2
length of the unit cell = a. We have, 3a 2 r r a
Cs Br 3
(1.69 1.95) 4.2 Å
117.(AD)
Hence A and D
a
118.(C) 3 and 4 are touching each other where centre to centre distance
2
1 and 2 are not touching each other.
a
1 and 3 touching each other where centre to centre distance
2
a
2 and 4 touching each other where centre to centre distance
2
Note: Every face centre atom touches every other face centre atom provided it is not the opposite face
centre atom in a FCC unit cell.
119.(B) Na+ lies in the octahedral void formed by Cl (Na+ touches all six Cl )
r r
120.(B) For a given radius of anion (R), we have
R
oct R td
Hence, the size of octahedral void is larger than that of tetrahedral void.
121.(D) For n-type, impurity added to silicon should have more than 4 valence electrons.
122.(D) Mg is a metal, so electrical conductor due to presence of freely moving e .
123.(A) Correct order is, Metal >> Insulator due to energy gap between valence band and conduction band.
124.(CD) Antiferromagnetic substances, unpaired electrons present in but actually they process zero net
magnetic moment because alignment of dipoles are compensatory.
125.(AC) Amorphous solids are called super cooled liquid and pseudo solids because arrangement of particles
are irregular.
126.(5) AB has rock salt structure A : B 1 : 1 i.e. FCC structure (Z = 4) and formula weight of AB is 6.023Y
1
g having closest distance (between A B) Y 3 nm. Therefore, edge length of unit cell
2 r A
r
B 2 Y
1/3
10 9
m
4 6.023Y 10 3
Density of AB 5Kg m 3 .
3
6.023 10 23
2Y 1/3
10 9
127.(216.5) Let ' Z ' be the number lattice points per unit cell.
o
Density of the metal whose M 75g mol 1 and a 5 A is given by
ZM Z 75
d ; 2
3 3
NA a
6 1023 5 108
On solving, Z 2
The metal has BCC unit cell in which
4r 3a
1.732 5 100
r pm 216.5
4
4
128.(62) Volume of one atom of Ar r 3
3
1.65
Also, number of atoms in 1.65g or one ml 6.023 1023
40
4 1.65
Total volume of all atoms of Ar in solid state r 3 6.023 1023
3 40
4 22 3 1.65
3
7
1.54 10 8
40
6.023 10 23 0.380 cm 3
1
135.(8) Effective number of carbon atoms present at corners 8 1
8
1
Effective number of carbon atoms present at face centers 6 3
2
1
Effective number of carbon atoms present in tetrahedral holes 8 4.
2
Total number of effective carbon atoms present in a unit cell of diamond is 8.
r 100
136.(682.84) 0.414
r 241.2
r must be in octahedral voids. Therefore, it is NaCl type crystal.
a 2 r r 2 341.42 682.84 pm.
137.(12) 138.(25.93%)
ZM 4 58.5
139.(1.79) 1.79g / cc
N AV a 3 6.023 1023 (6 10 8 )3
140.(6) It is evident from figure that B occupies octahedral voids and thus coordination number is six.
a 3 4.3 1.732
1.(A) Distance between Cs and Br 3.723Å
2 2
2.(A) In 3D HCP CN = 12 for identical spheres.
3.(A) Ideally A = 4, B = 4; after removing all the face center atoms along a line A = 3 B = 4
formula is A 3B4
4.(D) Number of unit cell in bcc is 2 and in fcc is 4. 5.(D) because graphite having layord structure.
6.(A) Mass of one unit cell V d (V is volume, d is density) a 3 d
n at. wt.
Also, density
a 3 av. no.
a 3 n at. wt. n at. wt.
Mass of one unit cell
3 av. no.
a av. no.
4 58.5
(n = 4 for cubic shape)
6.02 1023
1
38.87 10 23 g 2.57 10 21
No. of unit cell in 1g
38.87 10 23
7.(B) These defects are created when one +ve and one –ve ion are missing from their respective positions.
V N0 d 4.2 8.6 8.3 10 24 6.023 1023 3.3
8.(C) Z 3.84 4
M 155
Thus, composition of substance AB3 .
1
9.(A) Effective number of corner atom (A) 8 1 X
8
1
Effective number of face centred atom (B) 6 3 Y
2
4 4 16 3
10.(D) V n r 3 4 r 3 r 11.(D) For bcc lattice, co-ordination number is 8.
3 3 3
12.(A) Number of atoms of Y = 4
2
Number of atoms of X 8
3
Formula of compound will be X 4 Y3
13.(A) For fcc unit cell
4r 2a
2 361
r 127pm
4
14.(B) Packing fraction of cubic close packing and body centred packing are 0.74 and 0.68 respectively.
So, r 144 pm
1
16.(C) Effective number of A atoms 8 1
8
1 5
Effective number of B atoms 5 (One is missing)
2 2
Therefore formula is A1B5/2 A 2B5
3 351
17.(D) For BCC, 3a 4r r 152 pm
4
18.(B) The formula M0.98O shows that
M : O = 0.98 : 1 = 98 : 100
Then, if there are 100, O2– atoms, then M atoms = 98
Charge on 100 O2– ions = 100 × (–2) = –200
Suppose M atoms as M2+ = x
Then H atoms as M3+ = 98 – x
Total charge of M2+ & M3+ = (+2) x + (+3) (98 – x) = 2x + 294 – 3x = 294 – x
MO.98O is neutral,
294 – x = 200 x = 294 – 200 = 94
Magnitude of charge = | –200 | = 200
94
% of M as M2+ = 100 95.92% and % of M as M3+ = 100 – 95.92 = 4.08 %
98
19.(B) Other form molecules crystals.
20.(A) In FCC distance of closest approach between two atoms 2r
In FCC, atoms are in close contact along face diagonal of FCC unit cell.
2a a
4r 2a 2r
2 2
1
21.(C) A 8 1
8
(Corner)
22.(C) 2(r r ) 3a
Cs Cl
1
B 6 3
2
(Face centre) ∴ AB3
4.29 3
23.(A) 4r 3a r 1.86Å 24.(B) CrO2 is metallic and ferromagnetic.
4
25.(B) For fcc,
Then b 4r 2a
4r a
a 2 2r r
2 2 2
Therefore, distance of closest approach
a a
2r 2
2 2 2
26.(A) In Frenkel defect the cation will displace from its lattice point to an interstitial sites.
27.(C) Quartz is used as a piezoelectric material. It conducts electricity when subjected to mechanical stress.
ZM
28.(B) d for fcc Z 4
N A a3
4 63.55 422
d 23 3 8 3
d gcm 3
6.023 10 x (10 ) x3
29.(D) A 2 B3 is in HCP lattice
If lattice formed by B then number of tetrahedral voids per B atom = 2
2 1
Fraction of TVs filled
6 3
If lattice formed by A then number of tetrahedral voids per A atom = 2
3
Fraction of TVs filled
4
kg 4M 3
30.(A) 9 103
m3
6 10 23 mole1
2 2 10 30 m 3
9 6 16 2 10 4
M 305.4 10 4 0.03054 kg mol 1
4
31.(A) For Triclinic a b c [cell parameters] 90 [angles]
32.(D) For bcc lattice 3a 4r
Let the radius of sphere which fits at the edge centre in R.
r 2R r a
4r
2r
a 2r 3 a 3 a 2 2a 3 a
R , 0.0679
2 2 4 22
2
33.(C) Let number of B atoms = N
N
Number of atoms of A
2
Number of oxygen atoms = 2N
A:B:O
N
: N : 2N
2
1
:1: 2
2
1:2 : 4
AB2O4 is the formula
1
34.(B) cos
3
3a
The distance of corner atom tetrahedral void along body diagonal =
4
3a 1 a
Component along any side =
4 3 4
a a a
a
4 4 2
35.(D) Simple cubic = 1
B. C. C. = 2
F.C.C. = 4 ratio 1:2:4
4 4
zeff rA3 z eff rB3
3 3
A B
36.(C) P.F.
a3
2 rA rB 3a
2 rA 2rA 3a
2 3rA a
4 4 4
P.F.
1
3
rA3
3
8rA3
9
3
3
8 3 3rA 83 3 2 3
P.F 100 90%
2 3
37.(C) Interstitial compound are almost inert. 38.(B) AgBr shows both Frenkel and Schottky defects.
39.(A) ZnS, SiC are covalent solids and hence they have high melting point.
Hg being a metal conduct electricity in liquid state.
CCl 4 is non-polar having low melting point and is non-conductor in both liquid and solid state.
4 1
6 r 3 0.74
3 24 2r 3
Percent empty space = 100(1 – 0.74) = 26%
3a 3
r(Cr ) 287 pm 124.3 pm
4 4
NM
Density of solid
N A .a 3
N = Number of atoms per unit cell, M = Molar mass
a3 = Volume of cubic unit cell, NA = Avogadro’s number
3
2 52g 1
7.3g / cm 3
6.023 10 23 2.87 10 8 cm
N
5(1.26) Density
a3
3 3
d1 N1 a 2 4 3
1.26
d2
N 2 a1 2 3.5
7.
1
9.(C) A atoms : 6 3 (centre of each face)
2
1
B atoms : 8 1 (corners)
8
Formula : A 3B
According to figure 2 :
Total length covered by spheres = 5 + 4(RS) = 5 + 4 (10 sin 60).
Area of square having spherical marbles in it
5 103 g / m 3 5kg / m 3
(ii) Since observed density is greater than expected, theoretical density, there must be some excess
metal occupying interstitial spaces. This type of defect is know as metal excess defect.
12.(B) ZnS has zinc blende structure.
ZM
13.(217pm)
N A a3
N A a 3 2 6 1023 (5 10 8 cm)3
Z 2(bcc)
M 75
In bcc,4r 3a
3 3
r a 5 10 10 m
4 4
2.17 10 10 m 217 pm
14.(117pm) In a cubic crystal system, there are two types of voids known as octahedral and tetrahedral voids. If
r1 is the radius of void and r2 is radius of atom creating these voids then
r r
1 0.414 and 1 0.225
r r
2 octa 2 tetra
The above radius ratio values indicate that octahedral void has larger radius, hence for maximum
diameter of atom to be present in interstitial space :
r1 = 0.414 r2
For every 4 O2 ions there are 2 Al 3 ions and 1Mg 2 ion.
and for every 4 O2 ions there are 4 octahedral voids and 8 tetrahedral voids.
2 1 1
m and n
4 2 8
24.(ACD) The co-ordination number in bcc is 8. 25.(BCD) CCP has a packing efficiency of 74%.
The nearest neighbours in the top most layer is 9.
The number of tetrahedral and octahedral voids are 2 and 1 respectively per atom.
The edge length is 2 2 times the radius of atom ( 2a 4r)
z M0
26.(2) a 400pm ; d 8 g cm 3 ; w 256 g ; d
a3 N A
3
M0
d a3 NA
8 400 10 10 6.023 10 23
77.09 g/mol
z 4
256
Number of atoms 6.023 1023 N 10 24 2 1024 N 1024
77.09
N2
M X
27.(3.00) CCP OHV (octahedral void)
4 4
X 4 3 3 1 3 (Anion)
M 4 3 1 1 1 (Cation)