SemiConductoY Memoriez

Bemiconducto memies
Proqram Data
memay
memoy
inshuction set that
data bn ohich nctruction
a micvo Coputey heeds to
eXCCute.
sct opeYates

gonization >memdy is Lske a matir dhee

dotoly b ib) eoch ow ndicated a memag
Cocation
bufer Thside eoch Yow, cach cell s
regisbe
menay element thot stoes
1 Lit
eoch ow Can be Considered Cs
a reg istey that Can
(*s)memy
ste
multiple bits
at eoc h adhes
ddresses
Memoy
1 Fo 1-b it stoage FF is needed
2 Fo n-bit stage Reqister is heeded
3 Fa lodge amounts data sttoge bocks o6 Yeqisers ae reeded
gbit
DoOrIE
DeviG
Ats
Ar dota written into memoy with the
Ao hele oo & dota Cines
l6 addrey PFH
X8bir nes
* Combination o l6 addess (ines rc Present an addresx
no.0t Possfble addresse 6
Coch ecafion
has 8
bIts
SRe o memay
28 EK

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 Dat a ng
s adhess nput s 3
locotins wYite

34 dota ip ole Do D, D, Ds/

Aldbess
Ar K-P/
• R/w: Rea write E

A3
Ly|:read opevotion Aly

owite operation

En: ehable bata READ

©utrat
memy omly
uks cohen EN=

Thterfocin9
6bit
• ota bus: Collecton to gbIta MiCYo
Memory
it fs
biivectiona to aCOUnt Pxocexso
ob Yead &
write ofe rotion dote bus

EN
6 bit addess bug: Colection at 6
bit

Ploces
Odres on adehes bU% to
OCreBs a pootiCula
a location
seicordvcto M/M

RAM
ROM
1
Random eccess Memày 1-Recd omy
nedy
2. Read/wite 2 Recd onuy
3. Tempboy 3
eYmarent
User Programmakde H. Systom
Progrommoble
S
Random Access S. Rancorn Acce3.

RwM

Lyuentiou Random access

Memby
memby
AccesS ime ig Aces} time
d fesent tecotion is to få eery
Cotto is Same.
diffeemt
e CD,HDD, magnetfc top RAM, RoM

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 Clasesficotfon ot Mematez
JemiConduct Memay

RoM RAM

Bipola MOB Bipolar MOS

MOsh ROM PPoM EPRay

Stotic
PROM MOSk Static Pynami
RoM
UVEROM
EEPRoM

ACCHing to The Functional -Relatonship

wth cpU
The memày can be cloas giffed as Main memåu'
AUxt laY memay' kored en
and
its funetional velotfonshtp with the
certol Phocestng Unt.
: Main Memoy:The main memay
as Pimory merndy
is alSo
kon
D Cae memayThe instruction to be
etecuted ore Yead by the
cpU fhom
th't memby. Thle cata on ohich the rnstruction haz
s
to be o Pexote also Preent only fn
thiz memay. The outp
yesults are sted n ts memiy. since cll the Poesng iscone
-thoough the main memdy, iE houtd be fest. Cost 6 tis memoy
is also high
2 -AUxitay Memay: The auiliery memey ,also Frow as "seCanday

mem®y" s
Connectd os a peripherol devfce to
the Compsfe.
Hoe fnfåmatfon is st&ed n thfs fn the ton do moghete eneq
Thagh the speed tb dota tranctr in this Caze í leszer Comfed
to the man memiyit has he odvantage aó stotng logc lolume
tb dta

CpU Matn
Mendy MemòH
Mendt dgontzoton

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 Accoding to ethod ob Acce%
Dne ha% to uoyite ondloY vead the data ito|Prom the
data win be wrtten in to se poote locotion
a
memoy EOch
we
Based n
the Dcey in cothich the dota Can be wittenlread
CanClaEIfy the memoy in to' Direct acce%% memy nd
cequential accesB nemoy'.
I byect ACces% Nemg Ihthe diect accesp memy, the dota
Present locatfon Con be accesBed ot Yondom.The moin
inany
memðy ,e.nordom access memoy sa a Comple tely dirert oacezs
memdyThe mognette disk 1s one thpe ot divect aces memay
). sequentfo ACCeB$ Memdy:Tn this
type do memdy sytem, the
data an be writtenread only Sn an ôder we connot cucce BA

the memy locations. at Yondom.Untess the tfst emdy loctim

IE
acces2ed.we Con hot access te next looton, The mognete
tape fsthe best example a the sequentiol occesß memoy.

AcCading to TyPe 06 Accesng Atoed

Bsed en the tyPe accessng osble otth te meåies
tne Can clasgify them Sn to Read onlyH NeMay CRoM) d Reodlwte
eroies.
Read ony Memdy: The dota stoed con te vead toom but net
written in to the yead ony memlyC RoM. we Can ny Yead

tom thfs memDH and not wvitten Sn to it.

Diferent types
G)
Read ny MemByCROM)
VD Progronmable Reod only emay C PRoM)
G) Evosoble Proqrorable Rad onymemby cEPPot)
() Electyically Erasable ProqYOmmale Rad ony temoly(EerPor
()Flash RoM etc

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 Readlwite Memðy: Th% S% the memay n uohfch cwe Can
read as twetl as wite the data.The main memy mognetic
disks and mognette tapex e
al Yeod/uite memöfes.
Accoding to nc
tive De
vfce used
Eased on the TC tecolcgy used, one on an clossify the
mema Th to Bipol Memáfeg and Mos Memoes
I Bipola
Memafe: In the biPolca memley, the mlti emtte r
tronsistos e sed to stâe the data.
2. Mas
Memies: Ih this, the Unpola devfces $uch os metol oxide
Semi Conductoi
field eflect banelstâ CMOSFE) e Used to
Stoe
the data. Tese have lescey Speed Comp Ded to
the bipolca memoics
but are cheop
AcCôding to peiod ot ctg
When the data is soed in memay, it may be Pesent
theye Pemanently be lost due to SOme eason o
othe
Based Dn the time 8t ståage, the memay Can be ClosSied
Os Volatile Menay and 'Non olatile Memoy!
1. vollatle Memõy.
Ih this the data f not stãed Pomanenty
The main memoy is a volatile ap the
snfamotion ip staed
Sn them only as long as
the Power Suppy T Present
Once the power is Switcied oót,
the data is lost she the
Jta is stöed fn the fom ot Voltoges,
2- Non-volatile Memdy!Ih
his System, the data Btsied is hot
Lost unless we eyose ft. The seCondery memaíez
non voatile The doata ib stoed fn then
hot last eve
ce
i4
obt
the poweY PPly fz Switehed
Acc Bding to the state ob
Data Tanstey
the memic Can be elassifed a'Destructire
Memay and nen- Destbructive
Memdy based on
availability ot
ot
dato
dato at
ofter reading. the
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 Destruc tive Memoies: Th
thfs type ob memay aftey
4he read operation i Cornpleted
the dota Present fn
the memaLy is lost Hence pre sent fn the memay
the data
should be stied back by writing the data agoin toin to
the memnay afteyr Yeodina ft The mognelie coe memaicz
Qe destctive memuEB,
2
Noh-Destructve MemtiesThc semiconducto
memaez uged
fn the moden
Conutes e
hondestuctve.The Contents ot
the mennay e
hot lost after reading them,
Accoding to the Movement ob Data
Memaies Can be classtied Sn to statte Memy and
Dynamtc Memay based on their PoSi tonfn the memoy
time
ota
Stotic Nemdy
The memy is Consfdeyed to be statte if
the location co the dota is Corstont
and does not change.
This means thot ot the time oo
stoing the ota fh the
mema,it wi be stoed
in a potculo loCotion and it
soys there witthout mevement until an instuction moles
ft.
2. Dyhamîc Memy Th the dyhamic memay
sygten, the
PosfLion ot data wft hot
be Constoant:The Contuctfon ot
the remoy ftsel witl be such that the doto har to be
moved rom locotfon to location.

Read only MemoycRoM)

The Menôy system in uohich omly Yeadihg operotion s

Possible and not urittng operotion i hewn as Read only

emoy.To Understand the opetton let us onsider the cheuit
hoon below (n ohioh the clat ös s tdeol

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 doto lines

Diorle:

Addrey
D
ine

D3 Do

Cosbvct
RoM UBng Decoder

no0
2
3x8
becode

An A
Ap

Addrezs and Data t6 TYPiCal Memay

SNo A ddyes Data

2 toot

Oloo

llo

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 TYpes có ROMs

Proqramma ble RoM CPRoM)

tn ovdey to yeduce ttoe epenitue and the cwOStoqe ob
tne, the Programmable Read ela Hemây C PROM) was desgne.
PRoM
clous the usey to stae data by tne roc
rogvamming nce a pROM f PogaYammed,
ît Cannot bee changed.

Dode is onnecte d
a
by fuse
3x8 2

peoder 3 Diocu ce not

COrnectd, o.c.
L

A A, Ao

EYosable Progonmable Read ony MemyCEPRoMJ

If any atration required n PRoM, it cownot be
Coas ted out. Hence a need wa felt fo a PROM that Can hot
Dnly be ProqYamed Lot also erosCd and ePrgremmel. This
type Do PROMS Che knoun as Eratole Programnable Pead
Memày CEPRoN) These che two ty pes,
.
UItya volet EPROM CUVEPROM)
and
2. Ele ctically EPRoM CEEPRoM).

1 UVEPRorM
Ih thi Case, the RoM is
Sele witth Quatz
window that alows only Ulbraiclet ight.The Gh uv
ight ix
Snt oough the window to erase al the dot a
Ste Sh
the RoM. Ih fact, defemding Uptn the EPRoM ,Dne can cwite
o d ornly 1
in all the adye Cells

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 ePRoM, The EEPROM, be ero Sed
Cov
and verogomme
g electrical lcee. There is no need fe secia
equime nts as Ultraiolet lampsthe data is wvitte
such
Selectinq the addhess and applying the data a
te
data fnputs. except
Erasable is dome similoa to the wrft
that the
data nputs ooe logic
1.Thus this tyPe ot EPROM
Can be used to erase
and reprogYOm On a
basis. A
byte
chip eerase
function wil dlso be Provided to erase the
entrechip
CompaYiSon Btuween UVPROM
and EE PROM
SNO
EEPROM
These devices Can be WPRoM
erased
These devices Can be
and Proqromme d wth eraed
electical signal and PrDgTOmmed withuttra
Videt
Lht
2. The Voltoge On Aoottng
tate stUctue pemits. The phato CUYent
from tthe
stBage the insulaled
ate styuctue pemits
the stiog
3. Speed oo
opeation is måe
4
Speed 8t opYotim is less
Easg to Construct
and Dicult to Constyuct
cConom iCal and
eipenve.

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 RAM
STATIC PAM data Yemafns gtöed tfu rehrdy
RAM
energ ized
DynAMiC PAM dhta gvhcuolly qets depeted o
heclz to be efeshed aftr Yegul
Snteval
STATIC PAM
Bosic Memdy element
Cbistoble elerment)

Baste Meniy element

CCYOBK Coupled Snverer)

static RAM (SPA) wL=l MOSFET :0N,

MOSFET oheneveY
Oc,aS
hmemay is atie få read à
wyite

luwd ine Bit line CB)

Cwy
data to be citten on make BL

y Föl write eeyation Place the

wL=l, then data gets stžed into men4
beComes oVailoble at B
fo cad eRtion maie wL= stàed dota

Dynamic RAM CDPAM)

Conbul
Contbol

Dada,

MOS L
Switch
Grocto
Control| Conbol=0 KNOSfetCaH4 )

Doto- chaqe Capcitd Data- Gpocitd witl not chengctbtd)

Bit 1 stted

Practally when sw:OFf ar

chag leaks oualy dta gtoe d

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 Diftexente betuween D
PAM SPAM

sRAM DRAM
Capocita
t. Data fs 3toed
2. Conbe fmrlernent by 2. Con be implemented using 1o,
usin
BTT, MoSFET Dnly
both
3. Fastey 3.slowey
G Dissipates màe Pout due to 4. Dissipoes less Pouwer due to
BJT MoS

s. Me memðy
S.less memay Capocity oPocity

6Statc RAM is used in CACHE 6. Dynamic RAM iB used in

memàyCKbits, Mbis) main memðy (biga bit)
7
7
Volåile olatle
8. Refreshing is hot nee ded

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 PLD CPYoqrommable Loqic Devie)d
Proqromnobe Loqfe device CPED) is an înteqrot d

A
cius cheuit with pYoqYommale got s divided into
AND -anay
cnd oP-onoy sto Pyovide an AND -oP
Som-to-rcucts fmplerientotoy
ProqYammable loqic devices oe used Po Byntesizing

multtple- output furctions

Al he PLDs bosicatly Compribe an AND- oYoy Jolsued
by an an oP ny
There ce 3 maid type PlD, amd the4 diex n
d

the place ment ob Proromma ble Connectionb in the AND.

ay 1. PPoM CProqommaLle Reod only memy)
2- pUA C
Pveammoble Logic Aray
S PAL C
Progammable Anay Loqtc) pe

Ambnq them, the most feble plD p the PogIaAMmable

op-
Logic Anoy C PLA) oheye both the AND-OP Aoy bnd Aoy

AND
Progommolbe Outputx
inputs Flotle
CDecockr
OR Oa4
(a PRoM
inpui Preqrommade Fred outputx
OR oy
(AND oYoy

(b) PAL

nputs |Frogromnab le
JProgram ale| utpt

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 d
S6 PoM
to 3x8
DeCoderixed AND
DeCk

Bs By Bz B
Br B

peGt

PAL- Progronmable fhroy Logic.

ut has Proommade AND gats and xed oP qotex

of
Jt Poviles somple
tucte
X=m C23,.6.) =B X

Y= TmCo, s) y= AB+AC+Aß
2 3,
C

2= AB+ A£C
A
A

X=3
Y-ÐB+904ABc.

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 idea 7
Progammed once omd the Pogram an
it Con
A BC P
Pio

A
Pmantt binay nfo sted
Yeaui

AUPrOXe we have s
fnput

=32we Can have 0-3l encoded in binaa y

layer POM
S
to 32 t decoder
SOPPog the ROM needz g
utpus
layer RoM
A
bane gno gotey w
POAiL|e Connectio
to
tron the decodey

Cate a RoN tthat accePB a 3

bit number as Snpt
bincay numbery that egua to the
SUosed

4
3
So Gn Conect
togete
6

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 - Programmable
PA Loqic aoaydevices twith hogtammab
loofc
t has fzed aclttecte
dnd gate and Progrom maHe or gorfe3
Ssteps to ffn Poam PLA
Skpr pnd booleanfnction fyom
Step tth tale
tobe
y2
B

g.= AC +BC Y= Ac-+ABC

Step2 Toentify no do înput htton

heed
- we have tSee fnPut vaiables so we

slegg Tpementatfon t boole o n

unction fn PLA

? (AC, sC,
AND

to
4Namber PrDgramable AND ote s i
to equals numbers
to Procuct teyms 'in boolean tuncton
* Num ber tb Proqonmale oP goteg i eguals to numbe
tó output s n
in bolea tunctios

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 PRoM -Po0gammable Pead bnly memà
I. AD ay s fixed and oR aay ix Progiamnable
imple to Use
2 cheapeY and
3. A|| minteyms coe de Code
n
foP dòm Can be
Dnyg booleon Punctions stand
Implemente d
Bfng PPonm

PLA
POamable Logic Amay
1:
Botn AND ay and oP cra y cae fro gammoable.
2
Costiiest and mde Comple than PAL Cnd PRoM
3- AND cOGAy can be Progammed tv get
dfved minterms

4.Any boo leon functfons in Sop tam Can be implemented

using pn
PAL- Progrommable Ayay log'c

2- CheeaRY and cimpler

3.AND aay Can be Pro giammed to t desyed minteymy
SoP fom Can be implmented
4. Any boo
lean functim în
usng PAL

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