i - Yagnik Sie g080709 878 16. Semiconductr Mevius (recevo] « _) (ae] j ‘p)/ Oaen the cindall pam ofa half Wave | secti fier. faglate is rors - what is the : jbegney “bps in it3 outpul - 2 al Input ere! i) Figuas hows cincuit dia hol} Wave aechibien . The econdaxy coil AB ob. a pean naan °: ted ies with digds and. “aad resistance R ii) The second il AB changes its polarities abtes every hal} ——_lili) when pos cith heap yee bagi point A Point B. sis at highes potential potential wrt iv) “Therebort diode is boawatd biased. Tt conducts and custent plows through Ry - VY) when ragetive elf agile begier_poink A is_ot lower potenti t+ point! R- Lv) There |p ant. diode is. severse biased. Tt doer —|| not ronduct and no custent. passes ugh Be (i) Since cudtent laws. thmagh Bin the sams disection fos altmmats positive hal} cycle it is caned ol} wave sectifies . : viii) The frog ct_the tipple in output is || Same as ‘tha? ot the faepusy nay of i input fo. | half Wave aectifietPageita] 2 ) Ac | Jopu i) Figure shows tinewit di mn fon full Wave ect ben consisting oa _centrs + tapped transformer and diodes CD, & Dy) as well os load resistance Re ii) when positive half upc hegins Point A is ak higher potential itt polot B Ti)” Diede Di is farweid hiated and Da is “peveised hiated. Diode DI conducts and cussent he iV) ah en negative half cycle begins point A is at_lower potential wrt. point B: = |iy) Theefoas diode D1 is »evese biased. and —_|_Diode Dr is fraserd biases . Dinds D2. fonduct3 and cunt flows throw h i joo Vi) Since cussent plows throw AE. in the Same disection _| fos both the the cycles honce it is_calted full wave sectifien. Tput | —val tage = ~— + Time oult put | : Worl Ange. 2 Time, y 64) aby do we need filtees jn poser Supply 2 Art “fox any, wgict ‘on. but the “output does not haw a_steady value. i) Tt keeps fluctuating dus to the sipple component prssent in_it - iit) A alten cisuat is vied to samove the a ahead mbual fo tikien. Hen, to ged. a nutput- bromo poses Explaio the tipsking of Altes Cin uit taith Capacitor A "files Gradt is Ciamit which aemoves the AC tompanent (or ripple) rom a asetibier | output and adlows saly the DC Component(Pamawe] {owe [| 7 i; —— Te i Recti}iex +{¢ | i - ft —— a a > , . Voltage A c E & i v 7 \ ob \ ¢ ' 5 : r \ / ! / /\ fj 44 TF + i Vv ! tn _ \ v Ly | “ Hime ; : y: La) Fron aectifier the pe output voltage which 1 cont ates (ripple) te) ie. AC component_is_cpplied ! Across i p ; F j opt Point A__and wpplies current to | the Toad nest cea i Now, after point A, ssctifies voltage — pariter net) thee “ ad esi co E id Voltage acacies load’ decteater only : tiga. upto point B Ascause oat Coltape 5 This oss i and +the 1 ii I uly L shape ABCOEE Lr. Lately . acpeate d og.adn anol again Navefoan takes the aA, Shasn_in poyurea, Ans! alae a Ripple focton 2 (Pmero] F | ' Date The output ol a ex consists of a _simall i) Zen drode bendy dosed at Compared +0__osdinasry a i a . ii lett i is narson in Zener diode when compared to odin da. ii) Zener diode does not get damaged aohen SAVPALe voltage is incteatea , whereas ordi to an, when severe, voltae incasareds aftr ceetarn limit: iv) Zener diode ic used for vol 2c ulation | : . i licets OT) explain the fonward and srovere chasacteristis ipa dene diode. Ans_|| fos wail characterise - ener dewde hehaves like @ normal dinde when foaw arch biased, — Rovesxt tharatteristic :~ phen Kener _aoliode. is @yesse btased it shows a breakdown at’ sgverse “Voltage Called as hener wolkage.a ees applied valtnge Is increased eS L t ly jncieaset if he. beyond the = | Zenek yoltagey Ve). | Tt is jokerenting tv not: that yo! bom airs | constant at Vz even if the | intreasea- This property ot” cutieat Zener diode is wed in aw voltae aeaulator Tr ¥ Fowedt fusteat KT Tz Cminy Seo 06) in how a Zener diode maintains load - constant voltage Ons =] eh AWA = wh 9) N Vi 7 ac & 2: (Pemno] $ LI) | The circuit “di sam ft using enea_ Aide as ta voltage 20g ulator is skin « i) The. Resistor Rs 3 eeanected in Series with the Zener diode = ii) The load nesistance z is connected _in -Parallet pith Zener diode Wlonking +‘) Zh the input sige (neon then the oss the -sextes mesistanw Re alee inckoates. But the ! Otros s i chan ii) Sine toad sesistance is Connected parallel. ty Aener diode wr caine voltage is_toaintained @tross load nesistance “to Zeman ii) So the iconies resistane Re absorbs the increase in input yo |ta CV) ond helps in maintaining tonttan voltage _Otross Zener diode and load sosistance iv) qf, sitoilaady the. input voltage CVv:) 7 decisases ther the voltage atso% series aesistance Re Also arth » vy) Buk the woltage achass Lenek. diodes and hence dad Senistance R, does not Change . Vin 2 Ve + Vz But_\V, = Lz xks 2 Vin a (iz Rs) + V2 Lower value of inpuk valtnge Vingjouy2 Tagminy Rs + Ve Higher value ot input ct input voltage Vin chigh)= Fe (many Ret Vatoo eel Fe elarn eke pri o}opsr.ation ofa __ —__ photodiode. Hoa phate ocle..is__a_Spe cial type of pen ——junchon_e tode_which_co nverts_light energy — —_. “into _electaicatl_ener = as ti) when _p-n_junctioa_is_aeverse biased, then a sevetse Satusation cussent ! plows though sbhe_jwactian —_________ wii) “This sevette cument is called dark i oni by. Carries s = | @) : . “| © KS . OF © P-type + >see Ben region n-FYPe. iv) when P-n._ junctions: diodes is exposed to baht, ee “— hole poins aan gentraind i in the depletion ae ton. ‘y) “The electaie bietd Parscent in the depletion _aegionsepasates electrons & holes _ Vi) The electrons cre attracted towards the anode and holes ase attracted. towards ithe ¢athoda- E i vit) These flow of olectrons ond holes canst | aeverse Cussenct to increase. ‘vitt) The tote curssent in photrdiode is Sum at photo caurent and the dank Custentato] 4 =a Phy shout phatteds e. sated jn I seyesse: brated mode ? Ars |i) Tr cose: ot reverse biased p=njunckion the wid th of de pletion layed incagarer- i3) Thus mose number elechons ase Reverse ent inte initiall “intitase inthe intensity of light ard certain fined voltage This. Constant valueot tuarent 12 calted Saturation current: Dark resistance is the gatio “2h maximum a0 verse voltage and its dark Ubtonk - iad stat Advanta ications of photo dliode _ Adva, 2 i) Quick res ponse- when. @ +o light - . iz) Light weight and. Compact Size. Bi) RelaBvaly Low costs ———___ i) tligh speed off Operations .=e al Disadvantages) propeaties -o| photodiode Lk dent: Lif) Low acveise Cutient duced ar t i as intensity of Light : Applications: i) Counters & Stitches er ) Buaglas Alan pnd - i)-Dection ct visible _and invisible radiations iV) Sapety electronics like bine k smoke detectoas vy Used .as Sonsos | detec tors free accusste measurement ot ligne intensity. @2v) State the prinuple Qnd uses 0 Si An || Solax cell _painetple -» Tt is _a device which converts solar energy into-electaical- Pn BSA - J and +t: i hy iii) Used in lux meter to" maasure intensity of ay oq ¢x plain the constauction and blanking a] solas coll. Ans || Constsuction :- i) Solar cell consists v1 Pon junction. The n-side ha the “Solar “xadiation and p-side ic at the back of th. Solas colt.i i) Both. ‘>: side_and. n-si “side ane coated with ——tonducking material _ — Lit) The naside is codted mith antire|lectan |__coating mhich allows light to pass thmugh it- ‘ The Rain tuactin ah ‘thie abating. i fm ~ | siplect the Te sadiationt and pratect L d the Solas cell. iv) The__peside i —selatively thick. The n-side ? clax coll is thin So that Might is incident. on_it reaches the depletion sagion thes hence “Pars” ase gen exated 24 Anti a HeeE ight (oe Front Contact = fmitter (n-side Q, : 3 ; Te Base (Preside) de Rean contact | + loxking ». i i is incident on a ad _.| then inci t tons bs and electon= hale et ii) Th. electors and. ‘holes ase Led Electrons, cre collected: at cathade and holes dre collected ot anode. it) So, carriers or accumulated and it a voltage across the colar cll. Thus Powien. is” produced and stiliced J ab the. load L_connected in the ciacuit:[bes] } Explain v= coh oR accel eristics of Solan ca! cel} -short—ciseuit—current_(Tee}—_— $0] = Maximus _pobien __— H : . _ i 7 3-0 \ I [ 2.0 : . Open erreart re Tage Cee) Viewe gf Vol j 5 to 15 20 Vv V-T- tharacterrstis is dxaun in fea nth We know Pe vx: when the load is shont Cincuited., Veo and chont ciacuit Curtent ig Tos, . ~ Power doltvered = Zeno: This is interase cttan of Cusve with T- aris when the load is ga, Teo = Open ciamit woltnge is Vo “power delivered =" Zeno This _is tateuectio e Cuunve tit Y-axis. hene is a point on a Lsatve asheas poner. delivered... is tmaximum.. - oP = Vines Dinas(ene - Explain Construction of LED (1 ém ting Diode Mi) LED (Light £mitting diode) gh Loiting Dink LP hich ends ight hen “Large fonuaad tL euesent passes throug hi it: iii) The ronstiuction ‘ol pen is dif} eeent i from that of ao now mae dioda. ni) The mead on is ae doped than the | of junction. lye LED p- sania is encased in a dome - . tt { Zs emission o} light in au diaccttons | as well «as internal Seblections cre minimized - % Metal elechodes (Anode and cathode) are Nt attached «The Lange. leq of LED ts -tho ahi Positive clechode ex! i) epost resin body ol, Le. Ls conitsurtede ‘ forks gta at. the top of i. Z “eal ene ing. afm LED. Ans |i ee ee i)_when the: dtedo- ts bpamaxd blated electrons | Irae tanduitlee baad. astonliog with hb les ence ales’ bom va band : im) This atcombination aeloarer ident energy to prod wee, phate ar and la iv) Higher the fpaward tussent , highes ~ h wv rR : Te the Legh t oukpuk -Emitted Light — [Peml 4 Ore J “Il Recombination of ‘ance t Ff Seat and hates oo T T 7 . Pome, fet tt Faee oo ! [+] 2 OAT elect t < 0 a7|* % oot +t. yo Sage -type n-type | +| e2ii}l On tah x hoctoas docs the a aaa of li emitted by wa ieee 2 Ans By eayin 4 Honk of tlements like ga Ab; phos pha faa Gnd -artenic- in the Sehiconduiding tnaksnials it is possible produce Light of ali bherent tavnleng the. * | How -dow an. LED emits dif herent. colours 2 Ar mM when LED is man used Ug aluminivn upack Gallium arsenide —( At aos), e emits inhbrated aadiotons. ii) nihon LED iS made using - I enic. ph Cleo As?) if foduces erther ved: or gellors Lia kt: ti) When PEP is. ma! using alu pina gallina Man ane it emits aod ax qasen li wv) tahen Len~ “Thine ine it placa ‘hue ligheGaal 15) {owe] | ) | State Advantages & ses of -LED. : Adva |) LEDs Wane energy )_ebhicient: voduce ight _outp SS essen. elec'tatcal pause iD_LeDs Kave_long lifetime 0} 50,000 hows ot more. ii LEDs. tant instantly and emits li in NaAnOSeron nd. liv) LEDs do not. contain mercury or other harardous substances: ly Atress~ and ~rolous of light tori ited by iT he- caintrelled . = Uses : [applicattens) a “_LEDs are used in voniety of Aled s uch as uaglan—s ad atm Sys bem, Counters! dis play nt handset LEO cilewan ion vehicle head lamps Stacet liq bting * £aplain the constauction of a transistor Ars |l1) A transistor is a semiconductor device Wo jwncto h oye Cons: ii) The those doped —acqions Ont omittern, bane and collertos. iii} Emitter :- Dt is thick heavily doped legen. TT ie lagen —Suppliés a large number of tajead ty_carriers for the tursent [ow throuah the trznaistor. = iY) Pose 2. Tt i thin. li a (en “ Vi Collector. Te is also™ tick and moderately —— —4oped_tayen Ets crea is larger than thot_o| tee and the ee vi) There ane two by pes o} bansistoas i) n=p-n transiston 4) p= h=p fransistor base r — I ee r+ WA i Sei = = == oan Emitter f_ @llectoe ae == Veo —— Ie Explain the -ssoating ot n=p-> transis ton. Ans i) When £-8 junction is onward biased I ange numbhea ot electwonas enter the base megicn ponane emitter called emitter curseot” (Le) _ ii) These electrons can how flow in two directions a low i i nd constitute | ase t (1g) =_— © yw through Co civcurt and contaibute fowards the Collector current CL.) v) Since base _is thin and ligh tly doped the base curent (Lg) is sinall This oly tof Tp 7 vi) The! coll ects er is_abouk sy _«f Te2 Is = Ip.+ Te base Le Te + Ay wp AA Enaitter Collect = Ves Ip a g2i) thy is the. base of taansister made thin —7 asd _is” lightly doped 2 om in hast aeqion stor electrons — ene omittet to tipbuse— into ning bead In b lectrons bpm emitter hould not combine to a nentent with holes_im—h ase. ——____ 1 2 is mm ; ts electro ns ln collector and produces Collectos cuntent upto4s ta 61S) luhy is the emitter , the bare and the co lector of _ByT pe aiff eren tly 2 A+ _i) Emitter is “heavily ly doped so that it 7 lies ajoaity carriers the en 4) through tive trarsishern: ii) Bose is lightly daped that only hata ele chronys Joom_emi itter recombine with the holes - ii) Thus, base base (uttent is minimum and large ———__humbor of electrons ate pushed into collector azgion-(rxro] Te et - ; vel ) .. liv). Collector. is ako. heavily doped heron _. Lou doping of. colle cto evil) Ueake “ | » depletion layer - ange depleHon ~ Lage Ae crwaser kee Litt hendt - Thearhust , emitter bore -2 collectoe gre doped tamnuistoe fpor. : proper bunctio ping aul Define X and p- Derive the solation betirern them. Ars || DC cunent gate (x) is the gatio of Collectee Curren and the emitter cusint - Kpc = -—@ = i t in 04% & anplibicativn is the satio of coltectnr current to hase CAA rt - > I. =@) La [We know, “Te = In + LE : Dividing whole equation by Te Tp = fp + Le Te te Ze fom eqn @ & G) -) _ 13 os LeeFox tuansis toa pexoting as an ansplifier the emitie. base Ajunetion is tase while__collecte base. junction is nevesse biased. | Dran the ciruuit mbol of fellowing ii Zenm diode . i) photo diode iii) LE» iv) pen-p transi = i : Cathode Anodi : : tH al try 5 Anode TS Cathode TI en di - z - oN A oy K LED mitter SN callecton - ~ \ n 1 ; . & _ ft enierf 7 tanretox 3 paseo Peon-p - Paansishor - Base (P) “n=p=n rangistve(ram 0) a lL owe] |] == wr 4 ou) plate do in rmipan + a To ic gate A table re 2 Ans idee gate: A n iaital etncail with one | | OY. mart ‘irpyt st but only one output pig.nad is-called a alogia. gab Tauth table : £ shows. al. possible combinations of +he -input bad. cashes banding outputs oo i 7 z£ t tan Logic joie ec Reale Sepaiian. — statement that provides the aeladtonsh, — ene gate ne testuad Raeloen ©13) what of logic gates ? wh Ans isa Nor gate Known. at an’ inves bea. (ses + i) N ond i “building blocks to conbadet digubal_siaeuits used in Aidital clocks , Computers etc al. Gotes are used in hoolean a@i_odditiun, multiplication’ ete can be aealicod Hovaugh logic gates a ot goke has One. inpat and one_oukput educa output if she } input i s‘o'- her input is 20 + “me Eput is “O!- Lt always products a negatid Version of i we its output: ‘Heng, ib is also known as an inverters.: Page ro] 2] ‘ i wl 1 12 #1 Drow thr schematic Symbal fot Nor gate. Waite its__Boolean_expacssion auth taste Duaw the schemabe surmbol fror OR Gots Waite ifs Boolean expression And tauth table A ~ YeAtB. B - =. | H i i | #|LDraw the Schr matic Sysohol o Woite its Boolean _expis ian & tauth table 7 ye AtB B Boolean expacttion Ye A+R. a e Input A ~ Input. output v oO o t ~|- Jo oO Qo g lo IL iheoes LI bl! Draw the chaabie | <4.cb0 fon AND Gate Write its Boolean sepp eigen its tsuth table. eae Bralean enc} sion 2 Y2A:B [Tnput_A_] 0. oO oO | 0 t _0 | \ ° | oO { el | Draw the schematic Symbol for NAND Gat Waite its Boolean sepacasl on ar 6 tact table A ——| yr A-B 5 | 4 __Boslean.cupaossign Ye ACB put A | Input ‘0 0 oO L ee A { | Drow the schematte Symbol for XOR Crate - Waite its Boolean eapaession its tanth table “o- B pe. Tnput A | Tnput 6 | Output Y oO Oo oO = B oO A \ 0 ( 1 ee ee ee