Smart Power IC’s (ECE 606)

Prof. Mohamed Abouelatta

Electronics & Communications
Engineering Department
 Course Catalog
ECE 606 Smart power ICs
Analysis and design of lateral type power devices such as LDMOS
and LIGBT. Analysis of low voltage CMOS control circuitry. The
problems of integrating low power control circuitry with the power
devices on the same substrate and their mitigation will be
introduced such as coupling problems. Types of Isolation
techniques. Substrate Noise analysis. Effect of the high voltage
signal on the CMOS operation. TCAD tools will be given together
with a case study- LDMOS with Low voltage CMOS.
 Course Description
Introduction and Applications of SPICs.
Analysis of Power Devices: LDMOS and LIGBT.
Analysis of LV CMOS control circuitry
LV and Power Devices coupling problems and
Isolation techniques
Modeling of SPICs
Course Project
❑ EPFL Model components
❑ TCAD Tools
❑ Verilog-A implementation
 References
B. Murari, Smart power ICs: technologies and applications
(Vol. 6). Springer Science & Business Media, 2002.

B. J. Baliga, Fundamentals of power semiconductor devices.

Springer Science & Business Media, 2010.

P. Buccella, C. Stefanucci, M. Kayal, & J. M. Sallese,

Parasitic Substrate Coupling in High Voltage Integrated
Circuits: Minority and Majority Carriers Propagation in
Semiconductor Substrate. Springer, 2018.

S.M. Sze, Physics of Semiconductor Devices, 2nd Edition,

Wiley-Interscience, 1981.
 Grading Policy
➢ Course Project: 30 %
➢ Final Exam : 70 %

Notes:
1- The course will be a flipped Learning.
2- The project is composed of three main tasks.
⁻ EPFL Model components.
⁻ An implementation of Distributed EPFL Model of the SPIC.
⁻ Comparaison of the DC and Small signal characteristics with TCAD
Silvaco Simulation.
 Introduction
✓Smart PIC is a combination of VLSI signal processing and high power
output driver on the same chip.

Low Voltage + Power Output

Control Circuits Drivers

✓These ICs improve the reliability, reduce the volume and weight, and
increase the efficiency of a system.

✓The Lateral Double Diffused MOS (LDMOS) and The Lateral Insulated-
Gate Bipolar Transistor (LIGBT) are the most popular high voltage
structures that can be used to implement the Smart Power ICs.
Smart PICs applications
 Lateral Double Diffused MOS
❑ There are two major categories of LDMOS devices. One is
a conventional LDMOSFET, and the other is a Reduced
SURface Field (RESURF) LDMOSFET.
 Substrate couplings
❑ Deep Trench Isolation

❑ Junction Isolation

✓ Injecting current into the substrate

Comparison of different substrate
modeling methodologies
 EPFL Substrate Model

❑ The substrate is treated as a multilayer structure in the vertical

direction where each well is assumed to have a constant
doping concentration