Supporting Information

How to make over 20% efficient perovskite solar cells in regular

(n-i-p) and inverted (p-i-n) architectures
Michael Saliba,1† Juan-Pablo Correa-Baena,2† Christian M. Wolff,3† Martin Stolterfoht,3 Nga
Phung,4b Steve Albrecht,4a Dieter Neher,3 Antonio Abate4b*

1
Adolphe Merkle Institute, Chemin des Verdiers 4, CH-1700 Fribourg, Switzerland.

2
Massachusetts Institute of Technology, Cambridge, MA 02139, USA

3
University of Potsdam, Institute of Physics, Karl-Liebknecht-Str. 24-25, 14476 Potsdam,
Germany

4 a
Helmholtz-Zentrum Berlin für Materialien und Energie, Young Investigator Group
Perovskite Tandem Solar Cells; b Young Investigator Group Active Materials and Interfaces
for Stable Perovskite Solar Cells, Kekuléstraße 5, 12489 Berlin, Germany

†
Authors have contributed equally
*Corresponding author: A.A. antonio.abate@helmholtz-berlin.de
antonioabate83@gmail.com

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Figure S1. Spiro film top view picture.
The picture displays a top view of a spiro-OMeTAD film deposited on perovskite. The red
circles highlight defects of the film as induced, for example, by aggregation of the additives
used in the spiro-OMeTAD solution.

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Figure S2. SEM top view image of the perovskite films.
SEM top view images of representative perovskite films in planar regular (n-i-p), mesoporous
(n-i-p) and planar inverted (p-i-n) architectures.

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Table S1. Device Layers thicknesses.
The tables report the thicknesses of the main layers in the three different device architectures.
Planar regular Thickness
(n-i-p) (nm)
FTO 450
n-layer 20-30
perovskite 500-600
p-layer 200-300

Meso Thickness
(n-i-p) (nm)
FTO 450
n-layer 20-30
meso n-layer 100-150
perovskite 400-500
p-layer 200-300

Planar inverted Thickness

(p-i-n) (nm)
ITO 150
p-layer 8
perovskite 400-500
n-layer 30

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