X-Ray Photoelectron

Spectroscopy (XPS) / Electron

Spectroscopy for Chemical
Analysis (ESCA)
 X-ray Photoelectron Spectroscopy
Introduction
Instrumentation
Qualitative analysis
Quantitative analysis
Depth profiling
Small area analysis and XPS imaging
Application examples
Charging compensation
Photoelectric Effect

Einstein, Nobel Prize 1921

Photoemission as an analytical
tool
Kai Siegbahn, Nobel Prize 1981
XPS, also known as ESCA, is a widely used surface analysis
technique because of its relative simplicity in use and data
interpretation.
XPS X-ray Photoelectron Spectroscopy
ESCA Electron Spectroscopy for Chemical Analysis
UPS Ultraviolet Photoelectron Spectroscopy
PES Photoemission Spectroscopy
KE = hν − BE − ΦSPECT BE = hν − KE − ΦSPECT

hυ: Al Kα(1486.6eV)

P 2s P 2p1/2-3/2
Kinetic Energy
Peak Notations

L-S Coupling ( j = l s)
e- 1
s= 12 s= 2

j= l + 12 j= l 1
2
For p, d and f peaks, two peaks are observed.
Au
The separation between the two peaks are named
spin orbital splitting. The values of spin orbital
splitting of a core level of an element in different
compounds are nearly the same.

The peak area ratios of a core level of an

element in different compounds are also nearly
the same.

Spin orbital splitting and peak area

ratios assist in elemental identification
Background:
Photoelectrons with
energy loss
Peak:
Photoelectrons without
energy loss
Relative binding
energies and
ionization cross-
section for U
 Analysis Depth
Inelastic mean free path (λ) is the mean distance that
an electron travels without energy loss
x
3λ −
∫0
e λ dx
x
∞λ −
∫0
e λ dx
1 − e −3
= = 0.95
1
For XPS, λ in the range of 5 - 35Å
Only the photoelectrons in the near surface region can
escape the sample surface with identifiable energy

Measures top 3λ or 50-100Å

X-ray Induced Auger Electrons
VG ESCALAB 220i-XL
Kratos XPS system
 Inside: Heating stage (max. 1200 C)
and filament for radical generation
5 keV
argon
Top View Dosing ion gun
Mg
x-ray gun
unit
UHV
STM Gate
valve
UV source
UHV e-beam evaporator for UPS

Ion beam
source XPS
Wien Filter Target
chamber Wobble Sample stage
stick with heating/
LEED cooling
QMS for TDS Magnet
Heating/cooling
stage for TDS
Detachable
nitrogen
CMA-QMS X-ray
Low energy ion beam system Entry glove box
monochromator
loadlock
XPS system suitable for industrial samples

Quantum 2000
 Vacuum Chamber Control Electronics

Ion pump
Turbopump

Sample Introduction Chamber

Vacuum System
UHV Chamber

Analyzer

Monochromator

Electron Gun
Sample Introduction System

75mm x 75mm
Max. Sample Height: 28mm
 Sample Transport System

Optics Mounting Block Parking Station

Introduction Chamber

Parking Station
Platen Transfer Arm
Five Axis Stage

Prep Chamber Mount

 Sample Positioning Station (SPS)

• A high magnification video

Camera
imaging system captures
optical images with the
Microscope position information attached
to the file
• The position information
Sample drives sample stage to the
Platen analysis area when the SPS
Base with
image file is read by the
Position Quantum 2000 system
Encoders computer
X-ray induced secondary electron x-ray secondary
imaging for precise location of the electrons
analysis area

+1

+2

500 x 500µm

SXI image from a selected

area of the SPS photo.
SPS image of a microcircuit transferred to the
Observe the SPS image
Quantum 2000 where the analysis points can be
registration accuracy
defined. Observe the details that is present from
buried layers, in an optical image
 X-ray Source in Quantum 2000

Ellipsoidal
Scanning Focused Monochromator
Electron Beam

Scanning Focused
X-ray Beam

Analyzer Input Lens

Aluminum Anode
Sample
PHI Quantum 2000
Instrumentation
• Electron energy analyzer
• X-ray source
• Ar ion gun
• Neutralizer
• Vacuum system
• Electronic controls
• Computer system
Ultrahigh vacuum
< 10-9 Torr (< 10-7 Pa)
• Detection of electrons
• Avoid surface reactions/
contamination
 Cylindrical Mirror Analyzer

CMA: Relatively high signal and good resolution ~ 1 eV

Concentric Hemispherical Analyzer (CHA)
Resolution < 0.4 eV
Factors
•Pass energy
•Analyzer radius
•Slit width
•Elements in the transfer lens
•Energy of the photoelectrons
Dual Anode X-ray Source
Commonly used
 SiO2 sample

O KLL for Mg Kα at 743eV

O KLL for Al Kα at 976eV
X-ray monochromator
nλ=2dsinθ

For Al Kα
λ = 8.3Å
use (1010) planes
of quartz crystal
d = 4.25Å
θ = 78.5
o

Advantages of using x-ray monochromator

• Narrow peak width
• Reduced background
• No satellite & ghost peaks
General methods in assisting peak identification
(1) Check peak positions and relative peak intensities of 2 or more
peaks (photoemission lines and Auger lines) of an element
(1) Check spin orbital splitting and area ratios for p, d, f peaks

A marine sediment sample from Victoria Harbor

Si 2p
Si 2s

Al 2s The following
Al 2p
elements are found:
O, C, Cl, Si, F, N, S,
Al, Na, Fe, K, Cu,
Mn, Ca, Cr, Ni, Sn,
Zn, Ti, Pb, V
B.E. = Energy of Final state - Energy of initial state
+
B A B
(one additional Redistribution of
+ve charge) electron density

B A B

B.E. provides information on chemical environment

Example of Chemical Shift
Example of Chemical Shift
Chemical Shifts
Chemical Shifts
Use of Different Photon Energy

(a) Zr Lα 2040 eV
(b) Mg Kα 1253.6 eV
(c) Ti Kα 4510 eV

oxide
Si
 X-ray Induced Auger Peaks
Auger peaks are also sensitive to chemical environment

Ni LMM lines
 Auger Parameter = B.E. (Cu 2p3/2) + K.E. (Cu LMM)
Cu Chemical State
in Cu Clusters Copper 2p3/2 Peak Copper Auger LMM Peak

12000
Mostly metallic Cu 8000

10000
6000

8000
34.3 nm Auger Parameter =
1850.9 eV
4000
6000

Intensity

Intensity
4000
2000

2000

0
0

Energetic Cu ions 940 938 936 934

B.E. (eV)
932 930 928 904 906 908 910 912 914 916

K.E. (eV)
918 920 922 924 926

Copper 2p3/2 Peak Surface Cu Copper Auger LMM Peak

14000 10000

200 nm
98.0 nm Auger Parameter =
12000
8000

10000

8000
1847.2 eV 6000
Intensity

Intensity
6000 4000

4000
2000
2000

Fused silica
0

940 938 936 934 932 930 928 904 906 908 910 912 914 916 918 920 922 924 926

B.E. (eV) K.E. (eV)

Literature data of Auger parameter:

Metallic Copper(0) = 1850.5-1851.9 eV
Copper(I) Oxide= 1848.4-1849.7 eV
 Quantitative Analysis
Peak Area of element A

IA Sensitivity factor of
SA element A
Atomic % = × 100%
Ii
∑i S Peak Areas / Sensitivity
i
factors of all other elements

Au 4f
Peak Area measurement
Need background subtraction
 Factors Affecting Photoelectron Intensities
For a homogenous sample, the measured photoelectron intensity is given by

I i ,c = f ⋅ N i ⋅ σ i ,c ⋅ λ ⋅ cosθ ⋅ F ⋅ T ⋅ D ⋅ A
Ii,c: Photoelectron intensity for core level c of element i Detector
f: X-ray flux in photons per unit area per unit time
Ni: Number of atoms of element i per unit volume d
σi,c: Photoelectric cross-section for core level c of element i
λ: Inelastic mean free path of the photoelectron in the sample matrix
θ: Angle between the direction of photoelectron electron and the sample normal
F: Analyzer solid angle of acceptance
T: Analyzer transmission function
D: Detector efficiency
A: Area of sample from which photoelectrons are detected
 Empirical Approach
k = constant
SA = sensitivity factor of a
I A = k S AM A core level of element A
MA = No. of A in the empirical
formula

I A S AM A IA MF
= ⇒ SA = ⋅ Usually assume SF=1
I F SF M F IF M A

For example, Teflon (-CF2-)

IC 2
SC = ⋅
IF 1
 Examples of Sensitivity Factors

1s Li2CO3 C 1s 0.067 0.069

Li2SO4 S 2p 0.069 0.067
KBF4 K 2p 0.50 0.50
NH4BF4 N 1s 0.55 0.57
Na2SO3 S 2p 2.95
CuSO4 S 2p 3.25
K2SO4 S 2p 2.90 2.85
Ag(COCF3)3 F 1s 2.62 2.81
Na5P 3O10 Na 2s 3.40
C6H2NS2K3O9 K 2p 2.89 3.05
N
1
SA =
N
∑S
i =1
Ai N = number of compounds tested
 Transmission Function
Transmission function is the detection efficiency of the electron
energy analyzer, which is a function of electron energies.
Transmission function also depends on the parameters of the electron
energy analyzer, such as pass energy.

Pure Au after Ar+ sputtering

Correction of sensitivity factor
• Determine the transmission function of the XPS
system that was used to generate the sensitivity factors
• Determine the transmission function of our XPS
system

where SA is the sensitivity factor of a core

T o level of element A, TA is the transmission
S A = S Ao A function of the instrument at the kinetic
TA energy of the core level, and superscript o is
for the instrument that is used to generate the
sensitivity factor
 Quantification Uncertainties

An error of 15% is generally quoted

e. g. 20% of Cu was obtained. The %Cu concentration
should be in the range of 17-23%.

An error of 1-2% can be achieved if samples with

known concentrations are used as standards
e. g. Determination of the concentrations of Si and N in
SiNx films with a Si3N4 standard.
Depth Profiling
Ar+ Sputtered
materials

Peak Area

Sputtering Time
 Depth Scale Calibration

1. Sputtering rate determined from the time required to sputter

through a layer of the same material of known thickness

2. After the sputtering analysis, the crater depth is measured using

depth profilometry and a constant sputtering rate is assumed

Concentration
Peak Area

Sputtering Time Depth

Typical Applications
Silicon Wafer Discoloration
Depth Profiling Architectural Glass Coating

• Architectural glass coating

• ~100nm thick coating

Sputtered crater

Sample platen 75 X 75mm

Depth profile of Architectural Glass Coating

100

80
O 1s O 1s
O 1s
Atomic Concentration (%)

60

Ti 2p

40 Nb 3d
Si 2p Ti 2p N 1s Si 2p

20 N 1s

Al 2p
0
0 Surface 200
Sputter Depth (nm)
 Nickel (30.3 nm)
Depth profiling Chromium (31.7 nm)
of a multilayer Chromium Oxide (31.6 nm)
Nickel (29.9 nm)
structure Chromium (30.1 nm)

Silicon (substrate)

100
Atomic Concentration (%)

80

60 Ni 2p Cr 2p metal Cr 2p oxide Ni 2p Cr 2p metal Si 2p

40 O 1s

20

0
0 Sputter Depth (nm) 185
 Depth Profiling with Sample Rotation
High energy ions
100

80
Ions: 4 keV
60 Ni 2p
Cr 2p
Si 2p
Sample still
Ni 2p Cr 2p
40 Sample
O 1s
20 Cr/Si interface width (80/20%) = 23.5nm
Atomic concentration (%)

00
185
100 High energy ions
Ions: 4 keV
80 Si 2p
Ni 2p Cr 2p With Zalar rotation
60 Ni 2p Cr 2p

40 O 1s
Sample rotates
20

00
185 Cr/Si interface width (80/20%) = 11.5nm
100

80 Si 2p Ions: 500 eV Low energy ions

60 Ni 2p
Cr 2p Ni 2p Cr 2p With Zalar rotation
40 O 1s
20

00
Sample rotates
Sputtering depth (nm) 185
Cr/Si interface width (80/20%) = 8.5nm
Depth Profile of MOS Capacitor
with Sample Rotation
 Instrumental Factors
Affecting Depth Profiles

• Adsorption from residual gas atmosphere

• Re-deposition of sputtered species
• Impurities in ion beam
• Non-uniform ion beam intensity
• Time-dependent ion beam intensity
 Sample Characteristics
Affecting Depth Profiles

• Original surface roughness

• Crystalline structure and defects (Channeling)
• Alloys, compounds, second phases (preferential
sputtering and induced roughness )
 Radiation-Induced Effects
• Primary ion implantation
• Atomic mixing
• Sputtering-induced roughness
• Preferential sputtering and decomposition
of compounds
• Enhanced diffusion and segregation
• Electron-induced desorption
• Charging of insulators
 Small area analysis and XPS Imaging

Photoelectrons Aperture of Photoelectrons Aperture of

Analyzer lens Analyzer lens

X-ray X-ray
Sample Sample

Spot size determined by the analyser Spot size determined by the x-ray beam
Both monochromated and dual anode
x-ray sources can be used
 (1) Moving sample stage
small x-ray spot size
Image: x,y position versus
photoelectron intensity
y Resolution: ~50µm
x

(2) Use of scanning plates

Outer hemisphere
Iner hemisphere

Scanning plates Aperture

(two pairs: x,y)

Slit plate Eight channeltrons

and head amplifier
Slit plate set

Spot size aperture Sample

Scanning plates
x-ray source Image: Voltages Vx & Vy scanned:
e-source Photointensity collected from
Sample different points in time sequence

Magnetic lens Resolution: ~10µm

 (3) Use of multichannel plate
MCP An array of e-detectors
Hemispherical mirror analyzer

Slit plate
y
MPC detector
Slit plate set
Spot size aperture

Scanning plates
Charge
neutralizer x-ray source x
Sample Image: x, y position of e- detector
versus photoelectron intensity
Magnetic lens
Best resolution: ~3 µm
 (4) Use of scanned electron beam
Elipsoidal monochromator

Analyzer

Electron gun

Al anode
Sample
Detector

Scanning ESCA Microprobe - scanned, focused, monochromatized x-ray beam

for small spot spectroscopy and chemical imaging.
Image: x, y scanning e-beam, induces scanning of x-ray
then x, y position vs photoelectron intensity
Best resolution: ~5 µm
 Charging Compensation
For metal or other conducting
Electron loss and compensation samples that grounded to the
spectrometer

-
e e-
X-ray
- -
e e- e
sample Electrons move to the surface
continuously to compensate
the electron loss at the surface
region.
For resistive samples
+ + + + + + + + "current" net loss of electrons
from the surface

e -
V = R⋅I
Potential developed Resistance between the
at the surface surface and the ground

I 10nA 10nA 10nA Note: for conducting

samples, charging
R 1kΩ 1MΩ 1000MΩ may also occur if
V 10-5V 0.01V 10V there is a high
resistance at the back
Important
Not important for accurate B.E. contact.
measurements
Shift in B.E.
of a polymer
surface

+ + + + + + + +
Surface Potentials
Differential (non-uniform) surface charging

Broadening of peak

Sample
Effects of Surface Charging
Charge Compensation Techniques

Low Energy Electron Flood Gun

filament

~2eV-20eV
Electrons
optics
e-
 Electron source Low energy
with magnetic field electrons and Ar+

analyser
+
electrons Low energy Ar beam
-ve
filament e X-ray Low energy
electron beam

Sample
Sample

Magnet A single setting for all types

of samples
 Multi-layered Drug Package
Optical photograph of SPS Photograph
encapsulated drug tablets Cross-section of Drug Package

Al foil

Polymer
Coating ‘A’
Polymer Coating ‘B’

Adhesion layer
at interface ?

100 X 100mm 1072 X 812µm

 Photograph of cross-section
Polymer coating ‘A’
10µm x-ray beam
-C 1s
30 minutes
Al

-O 1s
foil
-O KLL

-Cl 2p
++ +

-Si 2p
-Si 2s
1000 Binding Energy (eV) 0
1072 X 812µm
Polymer ‘A’ / Al foil Interface Polymer coating ‘B’
10µm x-ray beam 10µm x-ray beam
30 minutes -C 1s 30 minutes -C 1s
-O 1s

-O 1s
-O KLL

-O KLL
-Al 2s
-Al 2p

-N 1s
-Cl 2p

-Si 2p
-Si 2s

1000 Binding Energy (eV) 0 1000 Binding Energy (eV) 0

 Polymer coating ‘A’ Photograph (1072 X 812um)
10µm x-ray beam
C 1s
11.7eV pass energy
30 minutes
Al foil

Interface
C
H ++ +
O=C-O CCl

298 288 278

Binding Energy (eV) Polymer coating ‘B’

Atomic Concentration (%) 10µm x-ray beam C 1s

11.7eV pass energy
30 minutes
Area C O N Si
A 82.6 12.2 ---- 0.7
Interface 83.2 12.2 ---- 1.3 CH
B 85.9 9.8 4.3 ---- CNO
O=C-O
A silicon (Si) rich layer is present at 298 288 278
the interface Binding Energy (eV)
 XPS study of paint
Paint Cross Section
Polyethylene
Mapping Area
Substrate

Adhesion Layer

Base Coat

Clear Coat
695 x 320µm

1072 x 812mm
 Elemental ESCA Maps using C 1s,
O 1s, Cl 2p, and Si 2p signals

C O Cl Si

695 x 320mm
 C 1s Chemical State Maps

C 1s CH CHCl O=C-O

695 x 320mm
 Small Area Spectroscopy
High resolution C 1s spectra from each layer

Polyethylene Substrate Base Coat

Polyethylene Substrate
CHn
CHn

CN
C-O
Adhesion Layer
O-C=O

300 280 300 280

Adhesion Layer Clear Coat

Base Coat
CHn CHn

C-O
Clear Coat CN
CHCl O-C=O

300 280 300 280

Binding Energy (eV) Binding Energy (eV)
800 x 500µm
 Quantitative Analysis

Atomic Concentration* (%)

Analysis Area C O N Cl Si Al

Substrate 100.0 --- --- --- --- ---

Adhesion Layer 90.0 --- --- 10.0 --- ---
Base Coat 72.0 16.4 3.5 3.3 2.6 2.2
Clear Coat 70.6 22.2 7.2 --- --- ---

*excluding H
 Printed Circuit Board
Normal sample Sample with reddish color

Optical Microscope Pictures: 1072 x 812 um

 Normal sample
X-ray Induced Secondary
Electron Image x 10
4 Survey Spectrum
3

-O1s

-Au4f7
2.5

-Au4d3
-Au4d5
Point 8

-N1s
-Na KLL
-F1s
2

-O KLL
-Na1s

-C1s
1.5

-Si2s
-Si2p
-Cl2p
Atom %
C 34.1
1 N 2.8
O 37.0
F 2.3
Na 1.8
100 µm

0.5
Si 8.5

-F2s
Cl 1.8
0
Au 11.8
1100 1000 900 800 700 600 500 400 300 200 100 0
100 µm Binding Energy (eV)
 Spectra of Au 4f and C 1s

Au 4f
C 1s

100 98 96 94 92 90 88 86 84 82 80 298 296 294 292 290 288 286 284 282 280 278
Binding Energy (eV) Binding Energy (eV)
 Spectra of Cu 2p and O 1s

O 1s

Cu 2p

975 970 965 960 955 950 945 940 935 930 925 546 544 542 540 538 536 534 532 530 528 526 524
Binding Energy (eV) Binding Energy (eV)
Bonding Pad X-ray induced secondary electron image
Area with Reddish
Mark
Point 10

Point 9

50 µm

50 µm
 AWAY FROM FROM
Reddish Area Reddish Area
Atom %

-O1s
-O1s
C 29.8
O 47.0
F 1.2
Na 1.0
-Cu LMM

Mg 0.9
-Au4d3
-O KLL

Si 7.8
-Na KLL

-N1s

-Au4d5
S 1.7
-Cu2p3

-Au4f7
-C1s
-Na1s

Cl 1.9
Atom % Ca 8.5

-Ca2p3
-O KLL
C 47.8 Au 0.2
-Si2s
-Cl2p

N 3.4

-Na1s

-F1s
-Si2p

-Ca2s
-F KLL
O 31.2

-Na KLL
Na 0.7

-C1s
-Mg KLL
Si 9.7

-Si2p -Mg2s
Cl 1.2

-Cl2p
Cu 0.5

-Si2s
-Cu3p

-Cl2s

-S2p
-S2s

-O2s
-Au4f
Au 5.5

-Mg2p
1100 1000 900 800 700 600 500 400 300 200 100 0 1100 1000 900 800 700 600 500 400 300 200 100 0
Binding Energy (eV) Binding Energy (eV)
 Spectra from Reddish Area

Ca 2p Mg 1s

362 360 358 356 354 352 350 348 346 344 342 1320 1318 1316 1314 1312 1310 1308 1306 1304 1302 1300
Binding Energy (eV) Binding Energy (eV)
C 1s spectrum on Reddish Area

C 1s

carbonate CH

298 296 294 292 290 288 286 284 282 280 278
Binding Energy (eV)
 XPS imaging

Au, Ca, C and O are

scanned to see their
distribution.

Area 11
50 µm

50 µm
 Au4f 1259 Ca2p 492.9

XPS peak
area
intensity 50 µm

50 µm
maps
20 µm 4.6 20 µm 1.6

O1s 794.7 C1s 355.9

50 µm
50 µm

20 µm 118.5 20 µm 48.2
 Au4f 13.2% Ca2p 13.5%
Quantitative
ESCA maps
based on peak
area

50 µm
50 µm
measurements
from spectra 20 µm AC (%) 0.1% 20 µm AC (%) 1.0%

stored at each O1s 74.8% C1s 69.9%

pixel
50 µm

50 µm
20 µm AC (%) 26.0% 20 µm AC (%) 16.3%
 Chemical state information of C 1s map

C1s
1

0.9

0.8

0.7

Normalized Intensity
0.6

0.5

0.4
50 µm

0.3
carbonate
0.2

0.1

20 µm 0
292 290 288 286 284 282 280
Binding Energy (eV)
 Distribution of Carbonate

50 µm
50 µm

20 µm 20 µm

Non carbonate peak Carbonate peak

CaCO3 on the reddish area!

 Analysis of Hard Disk

• The continued increase in

95mm diameter hard disk storage density of hard
219921 disks requires read/write
heads to fly very close to
the disk surface. This
places high demands on
the lubricant system that is
used.
• A hard disk was pulled
from a production line and
inserted into the Quantum
2000 Scanning ESCA
Microprobe. 150 data
points were automatically
10 mm

defined and analyzed.

Fluorine 1s
Peak Intensity
10 mm 81943
150 analysis points.
 Quantitative Surface Composition Maps
Fluorine 37.41% Carbon 63.97% Oxygen 18.36%

Elemental
Composition

10 mm

10 mm
10 mm

(atom %)

10 mm 14.83% 10 mm 42.37% 10 mm 14.91%

Note the area of low fluorine concentration

Examples of lubricant molecules

HOCH2CF 2 O CF 2 O CF 2CF 2 O CF 2CH 2 OH
n m
O

O CH2CF2O CF2 O CF2CF2 O CF2CH2 O CH2 O

n m
O
 Overlayer and substrate
150 carbon 1s spectra
35k
On a disk surface
Graphitic
carbon
Lubricant Layer

Protective Carbon Coating

Intensity (counts/second)

Fluorocarbon
Most of the C in the lubricant
molecules are bonded to F

High binding energy

0
298 288 278
Binding Energy (eV)
 Lubricant Layer <30Å Photoelectron
Escape Depth
Protective Carbon Coating

Lubricant Thickness = λ sin(θ) ln[(K*I(CFx)/I(C)) + 1]

λ = Mean free path (escape depth) of C 1s photoelectrons

θ = Take-off angle for the photoelectrons collected by the spectrometer
I = Peak area of C or CFx
K = Correction constant for differences in atomic density between C
and CFx.

In this experiment, λ = 54.5Å, θ = 45°, and K = 2.15

 Lubricant Thickness Distribution
Note the area where the lubricant is missing or very thin

21.91 Å

Lubricant
Thickness (Å)
10 mm

10 mm 2.57 Å
Angle Resolved XPS
Plasma Treated Polystyrene

Angle-Resolved
XPS Analysis
Plasma Treated Polystyrene

Angle-Resolved
XPS Analysis

High-resolution
C 1s spectra
 Plasma Treated Polystyrene

• O concentration is higher near the surface

(10 degrees take off angle_
• C is bonded to oxygen in many forms near
the surface (10 degrees take off angle)
• Plasma reactions are confined to the surface
Angle-resolved
XPS analysis

Oxide on silicon
nitride surface
X-ray damage

Some samples can be

damaged by the x-ray

For sensitive samples,

repeat the
measurement to check
for x-ray damage.
 Summary of XPS Capabilities
•Elemental analysis
•Chemical state information
•Quantification (sensitivity about 0.1 atomic %)
•Small area analysis (5 µm spatial resolution)
•Chemical mapping
•Depth profiling
•Ultrathin layer thickness
•Suitable for insulating samples