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Introduction
The scanning electron microscope (SEM) uses a focused
beam of high-energy electrons to generate a variety of signals
at the surface of solid specimens to create an image,
producing various signals that can be used to obtain
information about the surface topography and composition.
The signals that derive from electron-sample
interactions reveal information about the sample including:
1. external morphology (texture and particle shape),
2. the dimensions (sizes) of particles
3. chemical composition: qualitatively or semi-
quantitatively determining chemical compositions (using
EDXS) , and
4. Element mapping
5. crystal structures and orientations of minerals
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Sample-Electron Interaction
y The scanning electron microscope (SEM) produces
images by scanning the sample with a high-energy
beam of electrons.
y As the electrons interact with the sample, they
produce secondary electrons, backscattered electrons,
and characteristic X-rays.
y These signals are collected by one or more detectors to
form images which are then displayed on the computer
screen.
y When the electron beam hits the surface of the
sample, it penetrates the sample to a depth of a few
microns, depending on the accelerating voltage and
the density of the sample.
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Resolution Limitation
y Electron microscope has higher
resolution than Optical Microscope
(OM)
y OM MDL : 0.2 Pm; eye: 0.1 mm
0.61O
d
n sin D
d = resolution/MDL (minimum distance
resolvable)
n = bias index
O = energy source wavelength
D = aperture angle
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Resolution Comparison
O(nm) Aperture Theoretic Magnification
Resolution (maximum)
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Overview SEM
y Scanning Electron Microscope (SEM)
y Components of SEM
y Resolution
y Depth of Focus
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Scheme:
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Scanning
The focused
electron beam is
used to scan the
material being
observed
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Scanning
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Electron Column
‘Electron Gun’
Wehnelt Tube
Anode
Condenser Lens
Objective Lens
Scanning Coil
Aperture
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Specimen
Chamber
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Depth of Field
Distance above & below the plane of focus
focu which appears
fo
to be in focus; = 1/
1/D
Small WD Large
g WD
Largee D ll D
Small
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Considerations
y What are you trying to achieve?
y What resolution will you require?
y What features do you wish to image?
y Is size etc important?
y Is your sample delicate?
y Does orientation matter?
y Is the sample one of a kind?
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Sample Requirements
y Dry
y Operating under high vacuum
y Stable
y Bombardment of electrons
y Conductive
y Prevention of charge build up
y Secure
y Transfer & movement of sample
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Biological SEM
y Soft tissues, cells, whole animals
y Not conductive
y <5kV imaging
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Grand
Scale:
Whole soft
ft-
bodied
animals
(Aphid)
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Preliminary Preparation
Applicable to any solid
material
y Grind or slice material:
y Coarse silicon carbide
paper
y Kerosene (if H2O
soluble minerals
present)
y Diamond saw
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Grinding
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Polishing
y With light to medium pressure
use diamond paste (6Pm, 3Pm
and 1Pm on a silk cloth) or
ultrafine silicon carbide papers
(2000 and 4000) on a rotating
lap to polish the prepared
surface
y Ultrasonically clean the
specimen between stages in
clean water or shellite (X55)
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Specimen Mounting
1. Stubs 2. Attach:
y C tape / tabs
Metal
y Conductive paint
Al, Au and C
y Glass
Various sizes y Conductive epoxy
Conductive 3. Coat
Sample Metal(s)
s) or C
Sputter / evaporative
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Stub
C Tape
Sample
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Coating of Samples
Biological samples are typically non-conductive
Bombard with electrons - dissipate charge
Coating:
Increases conductivity of the sample
Produces a reduction in surface charging
Provides protection against radiation damage
Reduces mass loss and contamination
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Coating Methods
Sputter coating:
Chamber pressure = 10-2
torr
Target (-ve) - made of
desired coating metal
Introduce Argon (Ar+) gas
to vacuum chamber
Argon molecules displace
atoms from the target
Sample below target is
coated
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Sputter Coating
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Coating Methods
Evaporative
coating:
Tungsten filament
Wire / rod / clump
of desired coating
material
Bell chamber
vacuum = 10-5 torr
Filament heated
Metal is evaporated
Sample is coated
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Evaporative Coating
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Don t wan
Don’t want to
obscure
features with
w
the coat!
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Analytical Data
Don’t want
to obscure
the
elemental
peaks of
p
interest
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Coating Problems…
y Artifacts
y Thermal damage
y Contamination
y Vacuum system
y Sample
y Environment
y Coating effects
y Edge effects
y Agglomeration of coat
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Au particles
visible on sample
surface
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SK charging
Charging problems???
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Evidence
videnc
vid
de
of
Charging
‘Streaking’
g in an
imageg is usuallyy
an indication of
sample charging
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Avoiding Edges
C Tape
C paint
Sample
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y CLEAN
y Cool IS YOUR
RESPONSIBILITY!
y Well labelled
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Secondary Electrons
SE Images
Collected from upper surface only (20nm)
Surface information
Biased SE detector
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Backscattered Electrons
BSE images
Topographical information
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Backscattered Electrons
BSE images
Immunocytochemistry
Enzymes
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Silver
er-
r-stained nuclei in tadpole red blood cells
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Bacckscattered
Backscattered
cat
ca
Image showing
‘natural’
natural atomic
at no.
contrast
Highly mineralised
chiton tooth (iron
(iron),
which has been
polished flat.
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Detector assembly
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Detector Assembly
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Detector System
Secondary Electron (SE) detector are for generating
microstructure analysis images, product analysis of
corrosion, fracture, material failure.
Backscattered Electron (BSE) detectors are used to
produce topographic images of microstructure maps
whose images are formed from differences in atomic
number / density contained by materials. The sample
area with a higher atomic number will appear
relatively brighter than the region with a lower atomic
number
X-ray detectors (SiLi) and EDX / EDS are used for
analysis of the composition of elements contained in
the micrometer order and mapping (distribution of
elements) in a material
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Specimen Interaction
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Backscattered Electrons:
Formation
Caused by an incident electron colliding with an atom in the specimen which is nearly
normal to the incident's path. The incident electron is then scattered "backward" 180
degrees.
Utilization
The production of backscattered electrons varies directly with the specimen's atomic
number. This differing production rates causes higher atomic number elements to
appear brighter than lower atomic number elements. This interaction is utilized to
differentiate parts of the specimen that have different average atomic number. An
example is shown in the SEM output section, specifically the mechanically alloyed
specimen micrograph
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Secondary Electrons:
Source
Caused by an incident electron passing "near" an atom in the specimen, near enough
to impart some of its energy to a lower energy electron (usually in the K-shell). This
causes a slight energy loss and path change in the incident electron and the
ionization of the electron in the specimen atom. This ionized electron then leaves the
atom with a very small kinetic energy (5eV) and is then termed a "secondary
electron". Each incident electron can produce several secondary electrons.
Utilization
Production of secondary electrons is very topography related. Due to their low
energy, 5eV, only secondaries that are very near the surface (<10nm) can exit the
sample and be examined. Any changes in topography in the sample that are larger
than this sampling depth will change the yield of secondaries due to collection
efficiencies. Collection of these electrons is aided by using a "collector" in conjunction
with the secondary electron detector. The collector is a grid or mesh with a +100V
potential applied to it which is placed in front of the detector, attracting the
negatively charged secondary electrons to it which then pass through the grid-holes
and into the detector to be counted.
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Auger Electrons
Source
Caused by the de-energization of the specimen atom after a secondary electron is
produced. Since a lower (usually K-shell) electron was emitted from the atom during
the secondary electron process an inner (lower energy) shell now has a vacancy. A
higher energy electron from the same atom can "fall" to a lower energy, filling the
vacancy. This creates and energy surplus in the atom which can be corrected by
emitting an outer (lower energy) electron; an Auger Electron.
Utilization
Auger Electrons have a characteristic energy, unique to each element from which it
was emitted from. These electrons are collected and sorted according to energy to
give compositional information about the specimen. Since Auger Electrons have
relatively low energy they are only emitted from the bulk specimen from a depth
of <3 nm
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X-rays
Source
Caused by the de-energization of the specimen atom after a secondary electron is
produced. Since a lower (usually K-shell) electron was emitted from the atom during
the secondary electron process an inner (lower energy) shell now has a vacancy. A
higher energy electron can "fall" into the lower energy shell, filling the vacancy. As
the electron "falls" it emits energy, usually X-rays to balance the total energy of the
atom so it .
Utilization
X-rays or Light emitted from the atom will have a characteristic energy which is
unique to the element from which it originated. These signals are collected and
sorted according to energy to yield micrometer diameter) of bulk specimens limiting
the point-to-point comparisons available
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Unscattered Electrons
Source
Incident electrons which are transmitted through the thin specimen without any
interaction occurring inside the specimen.
Utilization
The transmission of unscattered electrons is inversely proportional to the specimen
thickness. Areas of the specimen that are thicker will have fewer transmitted
unscattered electrons and so will appear darker, conversely the thinner areas will
have more transmitted and thus will appear lighter.
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Source
Incident electrons that are scattered (deflected from their original path) by atoms in
the specimen in an elastic fashion (no loss of energy). These scattered electrons are
then transmitted through the remaining portions of the specimen.
Utilization
All electrons follow Bragg's Law and thus are scattered according to
Wavelength=2*Space between the atoms in the specimen*sin(angle of scattering).
All incident electrons have the same energy(thus wavelength) and enter the specimen
normal to its surface. All incidents that are scattered by the same atomic spacing will
be scattered by the same angle. These "similar angle" scattered electrons can be
collated using magnetic lenses to form a pattern of spots; each spot corresponding
to a specific atomic spacing (a plane). This pattern can then yield information about
the orientation, atomic arrangements and phases present in the area being
examined.
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Source
Incident electrons that interact with specimen atoms in a inelastic fashion, loosing
energy during the interaction. These electrons are then transmitted trough the rest of
the specimen
Utilization
Inelasticaly scattered electrons can be utilized two ways
•Electron Energy Loss Spectroscopy: The inelastic loss of energy by the incident
electrons is characteristic of the elements that were interacted with. These
energies are unique to each bonding state of each element and thus can be used
to extract both compositional and bonding (i.e. oxidation state) information on
the specimen region being examined.
•Kakuchi Bands: Bands of alternating light and dark lines that are formed by
inelastic scattering interactions that are related to atomic spacings in the
specimen. These bands can be either measured (their width is inversely
proportional to atomic spacing) or "followed" like a roadmap to the "real"
elasticity scattered electron pattern.
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Operating Variables
y kV
y Accelerating voltage
y Speed of electrons
y IB
y Beam current
y Number of electrons
y WD
y Working distance
y Distance between top of sample & bottom of pole piece
y OA
y Objective apertures
y Restriction of primary beam electrons
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Accelerating Voltage - kV
y Speed of primary beam electrons
y 0.1kV - 30kV
y Charging reduced
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Interaction Volume vs kV
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Interaction Volume vs kV
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Accelerating Voltage - kV
Speed of primary beam electrons
0.1kV - 30kV
BSE signal increases with increasing kV
Therefore, with reduced kV:
BSE signal reduced SEII & SEIII signal reduced
Charging reduced
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30kV
5kV
30kV 5kV
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Resolution Problems!
SE signal is proportional to the thickness of the
coating metal
*Thinner coat = less SE signal*
Resolve small features - require thin coat
Highest primary beam resolution:
High kV + Low IB + Short WD + Small OA
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y 100-1000Å
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Comparison of SEM’s
W LaB
B6 FE
m3)
Brightness (A/cm 1004-10
- 05 1005-10
- 06 1007-10
- 09
2000
Lifetime (h) 200 1000
(20,000)
Vacuum (torr) 100-4
-4-10
0-5
- 100-6
-6-10
0-7
- 100-9
-9-10
0-11
-
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Source Resolution vs kV
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Tungsten
required
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y Thermal or
‘Schottky’ field
emitter
y Heated to 1800qC
y Coated - ZrO
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y High brightness
y SMALLER PROBE
y IMPROVED RESOLUTION
y ACHIEVABLE AT LOW kV
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High maintenance
Very expensive
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LEO polymer
~30nm
30nm
subunits o
of
collagen
fibrils
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Fungal spore(?)
sp on
fly wing
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In-Lens SE detectors
y Improved collection
efficiency
y 60% c/a 5%
y Less BSE signal
y Less SE II and III
collected
y Improved signal :
noise
y No ageing effect
y Reduced contrast
y Reduced topography
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