Name: Nikita Suresh Madavi

Roll No: 23M1160

Q1) PN Diode: p-type doping: Boron; n-type doping: Phosphorus;

Implant Energy = 10keV Implant Dose=1e12 /cm2

Implant Energy = 10keV Implant Dose=5e14/cm2

Implant Energy = 10keV Implant Dose=5e16 /cm2

Implant Energy = 20keV Implant Dose=1e12/cm2

Implant Energy = 20keV Implant Dose=5e14 /cm2

Implant Energy = 20keV Implant Dose=5e16 /cm2

Implant Energy = 40keV Implant Dose=1e12/cm2

Implant Energy = 40keV Implant Dose=5e14/cm2

Implant Energy = 40keV Implant Dose=5e16 /cm2

 Comparing all the results

Keeping Implant dose=1e12 and varying Implant Energy

 Keeping Implant dose=5e14 and varying Implant Energy

Keeping Implant dose=5e16 and varying Implant Energy

OBSERVATION:

Ion implantation combines ion separation, acceleration and dose measurement to introduce
precise number of dopant atoms into substrate.The distribution or depth of ions in ion implantation
depends on particle weight and implant energy;light ion penetrate more deeper than heavier
ions.The distribution is defined by symmetric Gaussaian distribution as seen in NetActive
Concentration plot for all Implant energies and dose.

Here in this example, we implant Phosphorus in Boron. Phosphorus being heavy ion than
Boron, when we implant Ph with smaller Implant energy here 10keV it has narrow distribution.For
higher implant energy, there’s more damage in substrate as scattering increases with high implant
energy because of random scattering and collision of ions.
Q2) PN Diode: p-type doping: Boron; n-type doping: Arsenic;

Implant Energy = 10keV Implant Dose=1e12 /cm2

Implant Energy = 10keV Implant Dose=5e14 /cm2

Implant Energy = 10keV Implant Dose=5e16 /cm2

Implant Energy = 20keV Implant Dose=1e12 /cm2

Implant Energy = 20keV Implant Dose=5e14 /cm2

Implant Energy = 20keV Implant Dose=5e16 /cm2

Implant Energy = 40keV Implant Dose=1e12 /cm2

Implant Energy = 40keV Implant Dose=5e14 /cm2

Implant Energy = 40keV Implant Dose=5e16 /cm2

 Comparing all results

Keeping Implant dose=1e12 and varying Implant Energy

 Keeping Implant dose=5e14 and varying Implant Energy

Keeping Implant dose=5e16 and varying Implant Energy

OBSERVATION:

Whereas, Arsenic being heavy ion doesn’t scatter more like Phosphorus. It gives more
deeper range for high implant energy whereas, Phosphorus gives wide near surface but shallower
towards end depth range.

This implies that for forming MOSFETs or transistors we use low energy but higher dose to
get precise tubs/wells for better operation.
Q3) Phosphorus wafer; n-doping: Phosphorus; p-doping: Boron

Common Base Configuration

Net active concentration with linear scale

 Net active concentration with log scale

Energy Band of Common Base Configuration

 Common Emitter Configuration

Net active concentration with linear scale

Net active concentration with log scale

Energy Band for Common Emitter Configuration
 Common Collector Configuration

Net active concentration with linear scale

Net active concentration with log scale

Energy Band for Common Collector Configuration

 CODES

Q1) SPROCESS
set ImplantEnergy @ImplantEnergy@
set ImplantDose @ImplantDose@
set CollectorDoping @CollectorDoping@
# 1D Grid definition in x direction
line x location=0.0 spacing=1.0<nm> tag=SiTop
line x location=50<nm> spacing=10<nm>
line x location=100<nm> spacing=20<nm>
line x location=500<nm> spacing=50<nm>
line x location=1200<nm> spacing=100<nm> tag=SiBottom
# 1D Grid definition in y direction
line y location=0.0 spacing=50<nm> tag=Left
line y location=1000<nm> spacing=50<nm> tag=Right
# Initial simulation domain
region Silicon xlo=SiTop xhi=SiBottom ylo=Left yhi=Right
# Initial doping concentration in the region defined
init concentration=@CollectorDoping@ field=Boron wafer.orient=100
# Global Mesh settings for automatic meshing in newly generated layers.
#This strategy is used when there is change in initial geometry due to
#deposit, oxidation and etching
mgoals min.normal.size =2<nm> normal.growth.ratio =1.4 accuracy=1e-5
# Deposition
deposit material= {Oxide} type=isotropic time=1 rate= {0.15}
grid remesh
mask name=implant_mask segments= {0<um> 0.425<um> 0.575<um> 1.0<um> }
#Etching
etch material= {oxide} type=anisotropic time=1 rate= {0.17} mask=implant_mask
grid remesh
#Save the structure file after etching
struct tdr =1_pn_oxide_etch_before_implant_@ImplantEnergy@_@ImplantDose@;
refinebox Silicon min= {0.0 0.4} max= {0.2 0.6}\
xrefine= {0.01 0.01 0.01} yrefine = {0.01 0.01 0.01}
grid remesh
implant Phosphorus energy=@ImplantEnergy@ dose=@ImplantDose@ tilt = 0
diffuse temperature=1060<C> time=1.2<s>
# Save the structure after implantation and diffusion
struct tdr =2_pn_after_implant_diffusion_@ImplantEnergy@_@ImplantDose@
etch material= {Oxide} type=isotropic time= 1 rate= {0.17}
grid remesh
# Save structure file after oxide etch
struct tdr =3_pn_after_imp_diff_oxide_etch_@ImplantEnergy@_@ImplantDose@;
deposit material= {Aluminum} type=isotropic time=1 rate= {0.07}
grid remesh
# Save structure after contact deposition
struct tdr =4_pn_after_metal_depos_@ImplantEnergy@_@ImplantDose@ ;
mask name=contacts_mask1 left=0.425<um> right=0.575<um>
etch material= {Aluminum} type=anisotropic time=1 rate= {0.08} mask=contacts_mask1
grid remesh
contact name = "n" box Aluminum adjacent.material = Ambient\
xlo= -0.071 xhi= -0.069 ylo = 0.425 yhi = 0.575
contact name = "p" box silicon adjacent.material = Ambient\
xlo= 1.19 xhi = 1.21 ylo = 0.0 yhi = 1
# Save final structure
struct tdr = 5_pn_final_structure_@ImplantEnergy@_@ImplantDose@
Q2) SPROCESS
set ImplantEnergy @ImplantEnergy@
set ImplantDose @ImplantDose@
set CollectorDoping @CollectorDoping@
# 1D Grid definition in x direction
line x location=0.0 spacing=1.0<nm> tag=SiTop
line x location=50<nm> spacing=10<nm>
line x location=100<nm> spacing=20<nm>
line x location=500<nm> spacing=50<nm>
line x location=1200<nm> spacing=100<nm> tag=SiBottom
# 1D Grid definition in y direction
line y location=0.0 spacing=50<nm> tag=Left
line y location=1000<nm> spacing=50<nm> tag=Right
# Initial simulation domain
region Silicon xlo=SiTop xhi=SiBottom ylo=Left yhi=Right
# Initial doping concentration in the region defined
init concentration=@CollectorDoping@ field=Boron wafer.orient=100
# Global Mesh settings for automatic meshing in newly generated layers.
#This strategy is used when there is change in initial geometry due to
#deposit, oxidation and etching
mgoals min.normal.size =2<nm> normal.growth.ratio =1.4 accuracy=1e-5
# Deposition
deposit material= {Oxide} type=isotropic time=1 rate= {0.15}
grid remesh
mask name=implant_mask segments= {0<um> 0.425<um> 0.575<um> 1.0<um> }
# Etching
etch material= {oxide} type=anisotropic time=1 rate= {0.17} mask=implant_mask
grid remesh
#Save the structure file after etching
struct tdr =1_pn_oxide_etch_before_implant_@ImplantEnergy@_@ImplantDose@;

refinebox Silicon min= {0.0 0.4} max= {0.2 0.6}\

xrefine= {0.01 0.01 0.01} yrefine = {0.01 0.01 0.01}
grid remesh
implant Arsenic energy=@ImplantEnergy@ dose=@ImplantDose@ tilt = 0
diffuse temperature=1060<C> time=1.2<s>
# Save the structure after implantation and diffusion
struct tdr =2_pn_after_implant_diffusion_@ImplantEnergy@_@ImplantDose@
etch material= {Oxide} type=isotropic time= 1 rate= {0.17}
grid remesh
# Save structure file after oxide etch
struct tdr =3_pn_after_imp_diff_oxide_etch_@ImplantEnergy@_@ImplantDose@;
deposit material= {Aluminum} type=isotropic time=1 rate= {0.07}
grid remesh
# Save structure after contact deposition
struct tdr =4_pn_after_metal_depos_@ImplantEnergy@_@ImplantDose@ ;
mask name=contacts_mask1 left=0.425<um> right=0.575<um>
etch material= {Aluminum} type=anisotropic time=1 rate= {0.08} mask=contacts_mask1
grid remesh
contact name = "n" box Aluminum adjacent.material = Ambient\
xlo= -0.071 xhi= -0.069 ylo = 0.425 yhi = 0.575
contact name = "p" box silicon adjacent.material = Ambient\
xlo= 1.19 xhi = 1.21 ylo = 0.0 yhi = 1
# Save final structure
struct tdr = 5_pn_final_structure_@ImplantEnergy@_@ImplantDose@
Q3) SPROCESS
# 1D Grid definition in x direction
line x location=0.0 spacing=1.0<nm> tag=SiTop
line x location=50<nm> spacing=10<nm>
line x location=100<nm> spacing=20<nm>
line x location=500<nm> spacing=50<nm>
line x location=1200<nm> spacing=100<nm> tag=SiBottom

# 1D Grid definition in y direction

line y location=0.0 spacing=50<nm> tag=Left
line y location=1000<nm> spacing=50<nm> tag=Right

# Initial simulation domain

region Silicon xlo=SiTop xhi=SiBottom ylo=Left yhi=Right
# Initial doping concentration in the region defined
init concentration=1e16 field=Phosphorus wafer.orient=100
# Global Mesh settings for automatic meshing in newly generated layers.
#This strategy is used when there is change in initial geometry due to
#deposit, oxidation and etching
mgoals min.normal.size =2<nm> normal.growth.ratio =1.4 accuracy=1e-5
deposit material= {Oxide} type=isotropic time=1 rate= {0.15}
grid remesh
mask name=implant_mask segments= {0<um> 0.200<um> 0.800<um> 1.0<um>
etch material= {oxide} type=anisotropic time=1 rate= {0.17} mask=implant_mask
grid remesh
#Save the structure file after etching
struct tdr =1_npn_oxide_etch_before_implant_first;
refinebox Silicon min= {0.0 0.4} max= {0.2 0.6}\
xrefine= {0.01 0.01 0.01} yrefine = {0.01 0.01 0.01}
grid remesh

implant Boron energy=10<keV> dose=3.03e13<cm-2> tilt = 0

diffuse temperature=1060<C> time=1.2<s>
# Save the structure after implantation and diffusion
struct tdr =2_npn_after_first_implant_diffusion
etch material= {Oxide} type=isotropic time= 1 rate= {0.17}
grid remesh
# Save structure file after oxide etch
struct tdr =3_npn_after_first_imp_diff_oxide_etch;
deposit material= {Oxide} type=isotropic time=1 rate= {0.15}
grid remesh
mask name=implant_mask segments= {0<um> 0.400<um> 0.600<um> 1.0<um> }
etch material= {oxide} type=anisotropic time=1 rate= {0.17} mask=implant_mask
grid remesh

#Save the structure file after etching

struct tdr =1_npn_oxide_etch_before_implant_second;
refinebox Silicon min= {0.0 0.4} max= {0.2 0.6}\
xrefine= {0.01 0.01 0.01} yrefine = {0.01 0.01 0.01}
grid remesh

implant Phosphorus energy=10<keV> dose=2e15<cm-2> tilt = 0

diffuse temperature=1060<C> time=1.2<s>
# Save the structure after implantation and diffusion
struct tdr =2_npn_after_second_implant_diffusion
etch material= {Oxide} type=isotropic time= 1 rate= {0.17}
grid remesh
# Save structure file after oxide etch
struct tdr =3_npn_after_second_imp_diff_oxide_etch;
deposit material= {Aluminum} type=isotropic time=1 rate= {0.07}
grid remesh
# Save structure after contact deposition
struct tdr =4_npn_after_metal_depos ;
# Multiple mask
mask name=contacts_mask1 left=0.450<um> right=0.525<um>
mask name=contacts_mask1 left=0.695<um> right=0.760<um>
mask name=contacts_mask1 left=0.895<um> right=0.950<um>
etch material= {Aluminum} type=anisotropic time=1 rate= {0.08} mask=contacts_mask1
grid remesh
contact name = "n_emitter" box Aluminum adjacent.material = Ambient\
xlo= -0.071 xhi= -0.069 ylo = 0.450 yhi = 0.525
contact name = "p_base" box Aluminum adjacent.material = Ambient\
xlo= -0.071 xhi= -0.069 ylo = 0.695 yhi = 0.760
contact name = "n_collector" box Aluminum adjacent.material = Ambient\
xlo= -0.071 xhi= -0.069 ylo = 0.895 yhi = 0.950
# Save final structure
struct tdr = 5_npn_final_structure
SDEVICE: COMMON BASE CONFIGURATION
**********CB_IV_Input*****************
Electrode {
{ Name= "n_emitter" Voltage= 0.0 }
{ Name= "p_base" Voltage= 0.0 }
{ Name= "n_collector" Voltage= 0.0 }
}

File {
* Input Files
Grid= "5_npn_final_structure_fps.tdr"
Parameter= "@parameter@"
* Output Files
Current= "@plot@"
Plot= "@tdrdat@"
Output= "@log@"
}

Physics {
Hydrodynamic
EffectiveIntrinsicDensity(BandGapNarrowing(Slotboom))
Mobility (
DopingDependence
HighFieldSaturation
)
Recombination (
Auger
SRH(DopingDependence)
Avalanche(Okuto)
)
}
Plot {
Doping DonorConcentration AcceptorConcentration
BandGap BandGapNarrowing ElectronAffinity
ConductionBandEnergy ValenceBandEnergy
eQuasiFermiEnergy hQuasiFermiEnergy
eDensity hDensity
EffectiveIntrinsicDensity IntrinsicDensity
ElectricField/Vector
Potential
SpaceCharge
Current/Vector eCurrent /Vector hCurrent /Vector
CurrentPotential * for visualizing current lines
eMobility
hMobility
SRHRecombination AugerRecombination
TotalRecombination SurfaceRecombination
eLifeTime
hLifeTime
ComplexRefractiveIndex QuantumYield
}

Solve {
* Initial Guess
Coupled ( Iterations= 100 ) { Poisson }
Coupled { Poisson Electron Hole }

Quasistationary (
InitialStep= 1e-5 Increment= 1.5
Minstep= 1e-8 MaxStep= 0.2
Goal { Name= "n_collector" Voltage= 1.5 }
){ Coupled { Poisson Electron Hole } }
 NewCurrentFile="Ib0_"
Quasistationary (
InitialStep= 1.0e-3 Increment= 1.5
Minstep= 1e-6 MaxStep= 0.04
Goal { Name= "n_emitter" Voltage= -1.5 }
){ Coupled { Poisson Electron Hole }
CurrentPlot ( Time= (Range= (0.0 1.0) intervals= 30))
Plot(FilePrefix= "n@node@_snap" Time=(1.0))
}
}
**********CB_IV_Output*****************
Electrode {
{ Name= "n_emitter" Voltage= 0.0 }
{ Name= "p_base" Voltage= 0.0 }
{ Name= "n_collector" Voltage= 0.0 }
}

File {
* Input Files
Grid= "5_npn_final_structure_fps.tdr"
Parameter= "@parameter@"
* Output Files
Current= "@plot@"
Plot= "@tdrdat@"
Output= "@log@"
}

Physics {
Hydrodynamic
 EffectiveIntrinsicDensity(BandGapNarrowing(Slotboom))
Mobility (
DopingDependence
HighFieldSaturation
)
Recombination (
Auger
SRH(DopingDependence)
Avalanche(Okuto)
)
}

Plot {
Doping DonorConcentration AcceptorConcentration
BandGap BandGapNarrowing ElectronAffinity
ConductionBandEnergy ValenceBandEnergy
eQuasiFermiEnergy hQuasiFermiEnergy
eDensity hDensity
EffectiveIntrinsicDensity IntrinsicDensity
ElectricField/Vector
Potential
SpaceCharge
Current/Vector eCurrent /Vector hCurrent /Vector
CurrentPotential * for visualizing current lines
eMobility
hMobility
SRHRecombination AugerRecombination
TotalRecombination SurfaceRecombination
eLifeTime
hLifeTime
ComplexRefractiveIndex QuantumYield
}
Solve {

Coupled(Iterations=100){ Poisson }
Coupled{ Poisson Electron Hole }

Quasistationary (
InitialStep=0.01 Increment=1.3
MaxStep =0.2 MinStep = 1e-6
Goal{ Name="n_emitter" Voltage=-1.5 }
){ Coupled {Poisson Electron Hole } }

Set( "n_emitter" mode current )

Quasistationary (
InitialStep=0.01 Increment=1.3
MaxStep =0.2 MinStep = 1e-6
Goal{ Name="n_emitter" Current=1e-3 }
){ Coupled {Poisson Electron Hole }
Plot(FilePrefix="n@node@_Ie" Time=(0.0;0.5;1) NoOverWrite )
}

NewCurrentPrefix="Ie0_"
Load(FilePrefix="n@node@_Ie_0000")

Quasistationary (
InitialStep=0.01 Increment=1.3
MaxStep =0.2 MinStep = 1e-6
Goal{ Name="n_collector" Voltage=-1 }
){ Coupled {Poisson Electron Hole}
 }
Quasistationary (
InitialStep=0.01 Increment=1.3
MaxStep =0.2 MinStep = 1e-6
Goal{ Name="n_collector" Voltage=5 }
){ Coupled {Poisson Electron Hole}

}
SDEVICE: COMMON EMITTER CONFIGURATION
**********CE_IV_Input*****************
Electrode {
{ Name= "n_emitter" Voltage= 0.0 }
{ Name= "p_base" Voltage= 0.0 }
{ Name= "n_collector" Voltage= 0.0 }
}

File {
* Input Files
Grid= "5_npn_final_structure_fps.tdr"
Parameter= "@parameter@"
* Output Files
Current= "@plot@"
Plot= "@tdrdat@"
Output= "@log@"
}

Physics {
Hydrodynamic
EffectiveIntrinsicDensity(BandGapNarrowing(Slotboom))
Mobility (
DopingDependence
HighFieldSaturation
)
Recombination (
Auger
SRH(DopingDependence)
Avalanche(Okuto)
)
}
Solve {
* Initial Guess
Coupled ( Iterations= 100 ) { Poisson }
Coupled { Poisson Electron Hole }

Quasistationary (
InitialStep= 1e-5 Increment= 1.5
Minstep= 1e-8 MaxStep= 0.2
Goal { Name= "n_collector" Voltage= 1 }
){ Coupled { Poisson Electron Hole } }

NewCurrentFile="Ib0_"
Quasistationary (
InitialStep= 1.0e-3 Increment= 1.5
Minstep= 1e-6 MaxStep= 0.04
Goal { Name= "p_base" Voltage= 1 }
){ Coupled { Poisson Electron Hole }
CurrentPlot ( Time= (Range= (0.0 1.0) intervals= 30))
Plot(FilePrefix= "n@node@_snap" Time=(1.0))
}
}

**********CE_IV_Output*****************
Electrode {
{ Name= "n_emitter" Voltage= 0.0 }
{ Name= "p_base" Voltage= 0.0 }
{ Name= "n_collector" Voltage= 0.0 }
}
File {
* Input Files
Grid= "5_npn_final_structure_fps.tdr"
Parameter= "@parameter@"
* Output Files
Current= "@plot@"
Plot= "@tdrdat@"
Output= "@log@"
}

Physics {
Hydrodynamic
EffectiveIntrinsicDensity(BandGapNarrowing(Slotboom))
Mobility (
DopingDependence
HighFieldSaturation
)
Recombination (
Auger
SRH(DopingDependence)
Avalanche(Okuto)
)
}

Solve {

Coupled(Iterations=100){ Poisson }
Coupled{ Poisson Electron Hole }

Quasistationary (
 InitialStep=0.01 Increment=1.3
MaxStep =0.2 MinStep = 1e-6
Goal{ Name="p_base" Voltage=1 }
){ Coupled {Poisson Electron Hole } }

Set( "p_base" mode current )

Quasistationary (
InitialStep=0.01 Increment=1.3
MaxStep =0.2 MinStep = 1e-6
Goal{ Name="p_base" Current=1e-6 }
){ Coupled {Poisson Electron Hole }
Plot(FilePrefix="n@node@_Ib" Time=(0.0;0.5;1) NoOverWrite )
}

NewCurrentPrefix="Ib0_"
Load(FilePrefix="n@node@_Ib_0002")

Quasistationary (
InitialStep=0.01 Increment=1.3
MaxStep =0.2 MinStep = 1e-6
Goal{ Name="n_collector" Voltage=5 }
){ Coupled {Poisson Electron Hole}

}
}
SDEVICE: COMMON COLLECTOR CONFIGURATION
**********CC_IV_Input*****************
Electrode {
{ Name= "n_emitter" Voltage= 0.0 }
{ Name= "p_base" Voltage= 0.0 }
{ Name= "n_collector" Voltage= 0.0 }
}

File {
* Input Files
Grid= "5_npn_final_structure_fps.tdr"
Parameter= "@parameter@"
* Output Files
Current= "@plot@"
Plot= "@tdrdat@"
Output= "@log@"
}

Physics {
Hydrodynamic
EffectiveIntrinsicDensity(BandGapNarrowing(Slotboom))
Mobility (
DopingDependence
HighFieldSaturation
)
Recombination (
Auger
SRH(DopingDependence)
Avalanche(Okuto)
)
}
Plot {
 ConductionBandEnergy ValenceBandEnergy
eQuasiFermiEnergy hQuasiFermiEnergy
}

Solve {
* Initial Guess
Coupled ( Iterations= 100 ) { Poisson }
Coupled { Poisson Electron Hole }

Quasistationary (
InitialStep= 1e-5 Increment= 1.5
Minstep= 1e-8 MaxStep= 0.2
Goal { Name= "n_emitter" Voltage= 1 }
){ Coupled { Poisson Electron Hole } }

NewCurrentFile="Ib0_"
Quasistationary (
InitialStep= 1.0e-3 Increment= 1.5
Minstep= 1e-6 MaxStep= 0.04
Goal { Name= "p_base" Voltage= 1 }
){ Coupled { Poisson Electron Hole }
CurrentPlot ( Time= (Range= (0.0 1.0) intervals= 30))
Plot(FilePrefix= "n@node@_snap" Time=(1.0))
}
}

**********CC_IV_Output*****************
Electrode {
{ Name= "n_emitter" Voltage= 0.0 }
 { Name= "p_base" Voltage= 0.0 }
{ Name= "n_collector" Voltage= 0.0 }
}

File {
* Input Files
Grid= "5_npn_final_structure_fps.tdr"
Parameter= "@parameter@"
* Output Files
Current= "@plot@"
Plot= "@tdrdat@"
Output= "@log@"
}

Physics {
Hydrodynamic
EffectiveIntrinsicDensity(BandGapNarrowing(Slotboom))
Mobility (
DopingDependence
HighFieldSaturation
)
Recombination (
Auger
SRH(DopingDependence)
Avalanche(Okuto)
)
}

Plot {
ConductionBandEnergy ValenceBandEnergy
eQuasiFermiEnergy hQuasiFermiEnergy
}
Solve {

Coupled(Iterations=100){ Poisson }
Coupled{ Poisson Electron Hole }

Quasistationary (
InitialStep=0.01 Increment=1.3
MaxStep =0.2 MinStep = 1e-6
Goal{ Name="n_emitter" Voltage=1 }
){ Coupled {Poisson Electron Hole } }

Set( "p_base" mode current )

Quasistationary (
InitialStep=0.01 Increment=1.3
MaxStep =0.2 MinStep = 1e-6
Goal{ Name="p_base" Current=1e-6 }
){ Coupled {Poisson Electron Hole }
Plot(FilePrefix="n@node@_Ib" Time=(0.0;0.5;1) NoOverWrite )
}

NewCurrentPrefix="Ie0_"
Load(FilePrefix="n@node@_Ib_0002")

Quasistationary (
InitialStep=0.01 Increment=1.3
MaxStep =0.2 MinStep = 1e-6
Goal{ Name="n_emitter" Voltage=5 }
){ Coupled {Poisson Electron Hole}
}}