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range. At no load or light load condition, the IC ■ External Programmable PWM Switching
operates in extended ‘burst mode’ to minimize Frequency
switching loss. Lower standby power and higher ■ Low VDD Startup Current and Low Operating
conversion efficiency is thus achieved. Current (1.6mA)
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VDD low startup current and low operating current ■ Good Protection Coverage With Auto Self-
contribute to a reliable power on startup design Recovery
with OBGZ10. A large value resistor could thus be o VDD Over Voltage Clamp and Under
used in the startup circuit to minimize the standby Voltage Lockout with Hysteresis (UVLO)
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power. o Gate Output Maximum Voltage Clamp (18V)
OBGZ10 offers complete protection coverage with o On-Bright Proprietary Line Input
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automatic self-recovery feature including Cycle- Compensated Cycle-by-Cycle Over-current
by-Cycle current limiting (OCP), over load Threshold Setting For Constant Output
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protection (OLP), VDD over voltage clamp and Power Limiting Over Universal Input Voltage
under voltage lockout (UVLO). The Gate-drive Range.
output is clamped to maximum 18V to protect the o Overload Protection (OLP)
power MOSFET.
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Excellent EMI performance is achieved with On-
Bright proprietary frequency shuffling technique APPLICATIONS
together with soft switching control at the totem Offline AC/DC flyback converter for
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TYPICAL APPLICATION
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OBGZ10
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Sense Input Voltage -0.3 to 7V
RI Input Voltage -0.3 to 7V
Min/Max Operating
-20 to 150 ℃
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Junction Temperature TJ
Min/Max Storage
-55 to 160 ℃
Temperature Tstg
Lead Temperature
260 ℃
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(Soldering, 10secs)
Note: VDD_Clamp has a nominal value of 35V.
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Stresses beyond those listed under “absolute maximum
ratings” may cause permanent damage to the device. These
Ordering Information
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are stress ratings only, functional operation of the device at
Part Number Description these or any other conditions beyond those indicated under
OBGZ10MP SOT23-6, Pb-free in T&R “recommended operating conditions” is not implied. Exposure
to absolute maximum-rated conditions for extended periods
may affect device reliability.
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Package Dissipation Rating
Package RJA(℃/W)
SOT23-6 200
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OBGZ10 X X
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M:SOT23-6 P:Pb-free
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Marking Information
Z10YWW
. ZZZ S
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Y:Year Code
WW:Week Code(01-52)
s: Internal code
ZZZ: Lot code
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TERMINAL ASSIGNMENTS
Pin Name I/O Description
GND P Ground
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Feedback input pin. The PWM duty cycle is determined by voltage level into this
FB I
pin and SENSE pin input.
Internal Oscillator frequency setting pin. A resistor connected between RI and
RI I
GND sets the PWM frequency.
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SENSE I Current sense input pin. Connected to MOSFET current sensing resistor node.
VDD P Chip DC power supply pin.
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BLOCK DIAGRAM
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ELECTRICAL CHARACTERISTICS
(TA = 25℃ if not otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit
Supply Voltage (VDD)
VDD =12.5V, RI=100K
VDD Start up
I_VDD_Startup Measure Leakage current 5 20 uA
Current
into VDD
VDD=16V, RI=100Kohm,
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I_VDD_Ops Operation Current 1.6 mA
VFB=3V
VDD Under Voltage
UVLO(ON) 7.8 8.8 9.8 V
Lockout Enter
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VDD Under Voltage
UVLO(OFF) Lockout Exit 13 14 15 V
(Recovery)
VDD Zener Clamp
VDD_Clamp IVDD = 5 mA 35 V
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Voltage
Feedback Input Section(FB Pin)
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AVCS PWM Input Gain ∆VFB /∆Vcs 2.0 V/V
VFB Open Loop
VFB_Open 4.8 V
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Voltage
FB pin short circuit Short FB pin to GND and
IFB_Short 1.0 mA
current measure current
Zero Duty Cycle FB
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VTH_0D VDD = 16V, RI=100Kohm 0.75 V
Threshold Voltage
Power Limiting FB
VTH_PL 3.7 V
Threshold Voltage
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Power limiting
TD_PL 35 mSec
Debounce Time
ZFB_IN Input Impedance 7 Kohm
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Over Current
VTH_OC Threshold Voltage FB=3.3V, RI=100 Kohm 0.69 0.75 0.81 V
at zero Duty Cycle
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Oscillator
Normal Oscillation
FOSC RI = 100 Kohm 60 65 70 KHz
Frequency
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Frequency
VDD = 16V, RI=100Kohm,
∆f_Temp Temperature 6 %
TA -20oC to 100 oC
Stability
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/Base frequency
f_shuffling Shuffling Frequency RI=100K 64 Hz
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CHARACTERIZATION PLOTS
VDD = 16V, RI = 100 Kohm, TA = 25℃ condition applies if not otherwise noted.
20 9.4
Ivdd_startup(uA )
9.0
8.6
I_vdd_startup (uA)
8.2
15 7.8
7.4
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7.0
10 6.6
6.2
5.8
5.4
5 5.0
4.6
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4.2
3.8
0 3.4
3.0
0 2 4 6 8 10 12 14 16 -20 10 40 70 100 130
VDD(V) T emp(C)
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VDD UVLO and Ops Current VDD Operation Current vs. Load(pF)
2
50KHz 65KHz 100KHz
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1.6 5
I( VDD ) (m A)
4
I(V D D ) (m A )
1.2
3
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0.8
2
0.4 1
0
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0
0 5 10 15 20 25 30 0 500 1000 1500 2000
VDD (V) Gate Load (pF)
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9.0 14.5
UVLO(ON) (V)
8.8 14.4
UVLO(OFF) (V)
8.6 14.3
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8.4 14.2
8.2 14.1
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8.0 14.0
-20 10 40 70 100 130 -20 10 40 70 100 130
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Temp(C) Temp(C)
115
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Fosc (KHz)
65.5
90 65
65 64.5
64
40
63.5
50 70 90 110 130 150 -20 5 30 55 80 105 130
RI(Kohm)
Temp (C)
Vth_OC VS Duty
0.95
0.9
Vth_OC
0.85
0.8
0.75
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0.7
0% 10% 20% 30% 40% 50% 60% 70%
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Duty
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OPERATION DESCRIPTION
The OBGZ10 is a highly integrated PWM the specified RI in Kohm range at nominal loading
controller IC optimized for offline flyback operational condition.
converter applications in sub 30W power range. 6500
The extended burst mode control greatly FOSC ( Khz )
reduces the standby power consumption and RI ( Kohm)
helps the design easily meet the international
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power conservation requirements. Current Sensing and Leading Edge Blanking
Cycle-by-Cycle current limiting is offered in
Startup Current and Start up Control OBGZ10 current mode PWM control. The switch
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Startup current of OBGZ10 is designed to be current is detected by a sense resistor into the
very low so that VDD could be charged up sense pin. An internal leading edge blanking
above UVLO threshold level and device starts circuit chops off the sense voltage spike at initial
up quickly. A large value startup resistor can MOSFET on state due to Snubber diode reverse
recovery so that the external RC filtering on sense
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therefore be used to minimize the power loss
yet provides reliable startup in application. For input is no longer required. The current limit
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AC/DC adaptor with universal input range comparator is disabled and thus cannot turn off
design, a 2 MΩ, 1/8 W startup resistor could the external MOSFET during the blanking period.
be used together with a VDD capacitor to
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provide a fast startup and low power Gate Drive
dissipation solution. OBGZ10 Gate is connected to an external
MOSFET gate for power switch control. Too weak
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Frequency shuffling for EMI improvement the gate drive strength results in higher
The frequency Shuffling/jittering (switching conduction and switch loss of MOSFET while too
frequency modulation) is implemented in strong gate drive output compromises the EMI.
OBGZ10. The oscillation frequency is A good tradeoff is achieved through the built-in
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modulated with a random source so that the totem pole gate design with right output strength
tone energy is spread out. The spread and dead time control. The low idle loss and good
EMI system design is easier to achieve with this
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OBGZ10 self adjusts the switching mode voltage compensated to achieve constant output
according to the loading condition. At from no power limit over the universal input voltage range
load to light/medium load condition, the FB with recommended reference design.
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input drops below burst mode threshold level. At overload condition when FB input voltage
Device enters Burst Mode control. exceeds power limit threshold value for more than
The frequency control also eliminates the TD_PL, control circuit reacts to shut down the
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audio noise at any loading conditions. output power MOSFET. Device restarts when
VDD voltage drops below UVLO limit.
Oscillator Operation VDD is supplied by transformer auxiliary winding
A resistor connected between RI and GND output. It is clamped when VDD is higher than
sets the constant current source to threshold value. The power MOSFET is shut
charge/discharge the internal cap and thus the down when VDD drops below UVLO limit and
PWM oscillator frequency is determined. The device enters power on start-up sequence
relationship between RI and switching thereafter.
frequency follows the below equation within
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IMPORTANT NOTICE
RIGHT TO MAKE CHANGES
On-Bright Electronics Corp. reserves the right to make corrections, modifications, enhancements,
improvements and other changes to its products and services at any time and to discontinue any product
or service without notice. Customers should obtain the latest relevant information before placing orders
and should verify that such information is current and complete.
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WARRANTY INFORMATION
On-Bright Electronics Corp. warrants performance of its hardware products to the specifications
applicable at the time of sale in accordance with its standard warranty. Testing and other quality control
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techniques are used to the extent it deems necessary to support this warranty. Except where mandated
by government requirements, testing of all parameters of each product is not necessarily performed.
On-Bright Electronics Corp. assumes no liability for application assistance or customer product design.
Customers are responsible for their products and applications using On-Bright’s components, data sheet
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and application notes. To minimize the risks associated with customer products and applications,
customers should provide adequate design and operating safeguards.
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LIFE SUPPORT
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On-Bright Electronics Corp.’s products are not designed to be used as components in devices intended to
support or sustain human life. On-bright Electronics Corp. will not be held liable for any damages or
claims resulting from the use of its products in medical applications.
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MILITARY
On-Bright Electronics Corp.’s products are not designed for use in military applications. On-Bright
Electronics Corp. will not be held liable for any damages or claims resulting from the use of its products in
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military applications.
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