Applied Electronics I Multiple questions

Direction: Choose the best answer from the given alternatives

I. Semiconductor theory

1. Which of the following statement express a semiconductor

a. A material that allows current to flow in one direction only.
b. A material that has very low electrical conductivity.
c. A material that has electrical conductivity between that of a conductor and an
insulator.
d. A material that can amplify or switch electronic signals.
Answer: c.
2. When a pentavalent impurity is added to a pure semiconductor, it becomes ………
a. An insulator
b. An intrinsic semiconductor
c. p-type semiconductor
d. n-type semiconductor
Answer: d
3. In the depletion region of a pn junction, there is a shortage of ……..
a. Acceptor ions
b. Donor ions
c. Holes and electrons
d. None of the above
Answer : c
4. A reverse bias pn junction has …………
a. Very narrow depletion layer
b. Almost no current
c. Very low resistance
d. Large current flow
Answer: b
5. p-n junction is
a. A device that allows current to flow in one direction only.
b. A boundary between a p-type and an n-type semiconductor.
c. A device that can amplify or switch electronic signals.
d. A device that creates an electric field across a semiconductor.
Answer: b.

6. What is the possible way to use of semiconductor material as a conductor?

a. Increasing the band gap energy
b. Decreasing the supplied temperature
c. Doping with impurity elements
d. Generating covalent bond between atoms
Answer: c
 Applied Electronics I Multiple questions

7. How is a p-type semiconductor material formed?

a. By doping with an element that has more valence electrons than the parent material
b. By doping with an element that has fewer valence electrons than the parent material
c. By doping with an element that has the same number of valence electrons as the parent
material
d. By exposing the material to high temperatures
Answer: b
8. Among the following which statement expresses the depletion region?
a. The region of a p-n junction that contains no charge carriers.
b. The region of a p-n junction that contains excess charge carriers.
c. The region of a p-n junction where the electric field is strongest.
d. The region of a p-n junction where current flows most easily.
Answer: a.
9. What is forward bias?
a. The application of a voltage that makes the p-n junction more conductive.
b. The application of a voltage that makes the p-n junction less conductive.
c. The application of a voltage that creates an electric field across the p-n junction.
d. The application of a voltage that makes the depletion region wider.
Answer: a
10. What happens to the width of the depletion region in forward bias?
a. It becomes wider.
b. It becomes narrower.
c. It stays the same.
d. It disappears completely
Answer: b
11. What happens to the width of the depletion region in reverse bias?
a. It becomes wider.
b. It becomes narrower.
c. It stays the same.
d. It disappears completely.
Answer: a
12. What will happen when a PN junction is forward biased?
a. The effective barrier potential reduces
b. Thickness of depletion layer and junction resistance decreases
c. The holes from p region move to n-side and electrons from n-side move towards p-side.
d. All of the above
Answer: d
13. Which one is correct about the flow of current in forward bias?
a. No current flows.
b. Current flows from the p-type material to the n-type material.
c. Current flows from the n-type material to the p-type material.
d. Current flows in both directions.
Answer: b
 Applied Electronics I Multiple questions

14. What is the breakdown voltage?

a. The voltage at which the p-n junction becomes more conductive.
b. The voltage at which the p-n junction becomes less conductive.
c. The voltage at which the p-n junction breaks down and conducts current in the
reverse direction.
d. The voltage at which the p-n junction stops conducting current entirely.
Answer: c

II. Semiconductor diode and their application

15. Which one of the following is the main use of semiconductor diode
a. Oscillator
b. Amplifier
c. Rectifier
d. Modulator
Answer: c
16. What is rectification?
a. Process of conversion of ac into dc
b. Process of conversion of low ac into high ac
c. Process of conversion of dc into ac
d. Process of conversion of low dc into high
Answer: a
17. Which of the following statements is true about a Zener diode?
a. It only conducts in the forward direction.
b. It only conducts in the reverse direction.
c. It can conduct in both forward and reverse directions.
d. It does not conduct at all.
Answer: b
18. Avalanche breakdown in zener diode is ______
a. electric current multiplication takes place
b. phenomenon of voltage multiplication takes place
c. electrons are decelerated for a period of time
d. sudden rise in voltage takes place
Answer: a

19. When the voltage across the zener diode increases_________

a. temperature remains constant and crystal ions vibrate with large amplitudes
b. temperature remains constant and crystal ions vibrate with smaller amplitudes
c. temperature decreases and crystal ions vibrate with large amplitudes
d. temperature increases and crystal ions vibrate with large amplitudes
Answer: d
 Applied Electronics I Multiple questions

20. What is the function of a Zener diode?

a. To rectify AC to DC
b. To amplify signals
c. To regulate voltage
d. To generate light
Answer: c
21. What is the function of a rectifier?
a. To amplify electronic signals.
b. To switch electronic signals.
c. To convert AC voltage to DC voltage.
d. To create an electric field across a semiconductor.
Answer: c
22. What is the Zener diode?
a. A diode that allows current to flow in one direction only.
b. A diode that can amplify or switch electronic signals.
c. A diode that creates an electric field across a semiconductor.
d. A diode that is designed to operate in the breakdown region.

Answer: d

23. A 9.1-V Zener diode exhibits its nominal voltage at a test current of 28 mA. At this
current the incremental resistance is specified as 5 Ω. Find V of the Zener model.
a. 8.96V
b. 9.03V
c. 9.17V
d. 9.24V
Answer: a
Explanation: VZ = VZo + MZ IZT
9.1 = VZo + 5 * 28 * 10-3
VZo = 8.96v
VZ = VZo + 5IZ = 8.96 + 5IZ.
24. The diode in a half wave rectifier has a forward resistance RF. The voltage is Vmsinωt
and the load resistance is RL. The DC current is given by _________
a) Vm/√2RL
b) Vm/(RF+RL)
c) 2Vm/√π
d) Vm/RL

Answer: b
Explanation: For a half wave rectifier, the IDC=IAVG=Im/π
I= Vmsinωt/(RF+RL)=Imsinωt
Im =Vm/ RF+RL So, IDC=Im/π=Vm/(RF+RL)
 Applied Electronics I Multiple questions

25. Efficiency of a half wave rectifier is

a) 50%
b) 60%
c) 40.6%
d) 46%

Answer: c
Explanation: Efficiency of a rectifier is the effectiveness to convert AC to DC.
For half wave it’s 40.6%. It’s given by, Vout/Vin*100.
26. A full wave rectifier uses load resistor of 1500Ω. Assume the diodes have Rf =10Ω,
Rr= ∞. The voltage applied to diode is 30V with a frequency of 50Hz. Then calculate the
AC power input.
a) 368.98mW
b) 275.2mW
c) 145.76mW
d) 456.78mW

Answer: b
Explanation: The AC power input PIN=IRMS2(RF+Rr).
IRMS=Im/√2=Vm/(Rf+RL)√2=30/(1500+10)*1.414=13.5mA
-3
So, PIN=(13.5*10 )2*(1500+10)=275.2mW.

27. DC average current of a bridge full wave rectifier (where Im is the maximum peak current
of input).
a) 2Im
b) Im
c) Im/2
d) 1.414Im

Answer: b
Explanation: Average DC current of half wave rectifier is Im. Since output of half wave
rectifier contains only one half of the input. The average value is the half of the area of one
half cycle of sine wave with peak Im. This is equal to Im.

28. DC power output of bridge full wave rectifier is equal to (Im is the peak current and RL is
the load resistance).
a) 2 Im2RL
b) 4 Im2RL
c) Im2RL
d) Im2 RL/2
 Applied Electronics I Multiple questions

Answer: b
Explanation: DC output power is the power output of the rectifier. We know VDC for a bridge
rectifier is 2Vm and IDC for a bridge rectifier is 2Im. We also know VDC=IDC/RL. Hence output
power is 4Im2RL.
29. The rectifier current is a short duration pulses which cause the diode to act as a_________
a) Voltage regulator
b) Mixer
c) Switch
d) Oscillator
Answer: c

III. Bipolar junction transistors( BJTs )

30. Which of the following is not a part of a Bipolar junction transistors ( BJT )?
a) Base
b) Collector
c) Emitter
d) None of the mentioned
Answer : b
31. If a BJT is to be used as an amplifier, then it must operate in___________
a) Cut-off mode
b) Active mode
c) Saturation mode
d) All of the mentioned

Answer: b
32. If a BJT is to be used as a switch, it must operate in____________
a) Cut-off mode or active mode
b) Active Mode or saturation mode
c) Cut-off mode or saturation mode
d) Cut-off mode or saturation mode or active mode

Answer: c

33. The function of the emitter and base in a BJT respectively are
a). To provide majority carriers, To control the flow of current
b). To control the flow of current , To collect minority carriers
c). To collect minority carriers, To control the flow of current
d). None of the above
Answer: a
 Applied Electronics I Multiple questions

34. The correct expression relating the emitter current Ie to the collector current Ic is
a) Ie = α Ic
b) Ic = α Ic
c) Ie = ß Ic
d) Ic = ß Ic

Answer: b
35. The correct relation between the emitter current Ie and the base current Ib is given by
a) Ib = (1 + α) Ie
b) Ib = (α – 1) Ie
c) Ie = (1 – ß) Ib
d) Ie = (1 + ß) Ib

Answer: d
36. Which of the following is true for the saturation region of BJT transistor?
a) The collector current is inversely proportional to the base current
b) The collector current is proportional to the square root of the collector current
c) The natural logarithm of the collector current is directly proportional to the base
current
d) None of the mentioned
Answer: b

37. Which of the following is true for a pnp transistor in active region?
a) CB junction is reversed bias and the EB junction is forward bias
b) CB junction is forward bias and the EB junction is forward bias
c) CB junction is forward bias and the EB junction is reverse bias
d) CB junction is reversed bias and the EB junction is reverse bias
Answer: a

38. The current gain of BJT is_________

a) gmro
b) gm/ro
c) gmri
d) gm/ri

Answer: c
 Applied Electronics I Multiple questions

39. The collector current is 2.945A and α=0.98. The leakage current is 2µA. What is the
emitter current and base current?
a) 3mA and 55µA
b) 2.945mA and 55µA
c) 3.64mA and 33µA
d) 5.89mA and 65µA
Answer: a
Explanation: (IC – ICBO)/α=IE
= (2.945-0.002)/0.98=3mA.
IE=IC+IB . So, IB=3-2.495=0.055mA=55µA.

IV. Field effect transistors (FETs)

40. Which of the following statement is true about FET?

a) It has high output impedance
b) It has high input impedance
c) It has low input impedance
d) It does not offer any resistance
Answer: b

41. Comparing the size of BJT and FET, choose the correct statement?
a) BJT is larger than the FET
b) BJT is smaller than the FET
c) Both are of same size
d) Depends on application
Answer: a
42. What is the main advantage of FET which makes it more useful in industrial applications?
a) Voltage controlled operation
b) Less cost
c) Small size
d) Semiconductor device
Answer: c

43. To use FET as a voltage controlled resistor, in which region it should operate?
a) Ohmic region
b) cut off
c) Saturation
d) cut off and saturation

Answer: b
 Applied Electronics I Multiple questions

44. Which of the following can be considered to be an advantage of FET amplifier as

compared to BJT amplifier?
A – Higher input impedance
B – Good bias stability
C – Higher gain-bandwidth product
D – Lower noise figure
Select the correct answer using the codes given below Codes:
a) A, B and C
b) A, B and D
c) B, C and D
d) A, C and D

Answer: b

45. The action of JFET in its equivalent circuit can be represented as which of the following?
a) Current controlled current source
b) Current controlled voltage source
c) Voltage controlled current source
d) Voltage controlled Voltage source
Answer: c