IGBT: Insulated-Gate Bipolar Transistor

Combination BJT and MOSFET

High Input Impedance (MOSFET)
Low On-state Conduction Losses (BJT)
High Voltage and Current Ratings
Symbol

ECE 442 Power 1

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 Cross-Sectional View of an IGBT

Metal

Silicon Dioxide

Metal

ECE 442 Power 2

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IGBT Equivalent Circuit for VGE<VT
+

IEPNP VCC
IBPNP

ICNPN
Leakage Current
ICPNP
IBNPN

Both transistors are OFF

IENPN IRBE

ECE 442 Power 3

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 IGBT Equivalent Circuit for VGE>VT
+
PNP transistor turns ON, VCC
RMOD decreases due to
carrier injection from the
PNP Emitter.

NPN Transistor
becomes forward
biased at the BE,
MOS transistor conducts, drawing current
drawing current from the from the Base of
Base of the PNP transistor. the PNP transistor.

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Channel is Induced When VGE>VT

RMOD PNP

electrons

NPN
RBE
Induced Channel

ECE 442 Power 5

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 IGBT Output Characteristics

Follows an SCR
characteristic

ECE 442 Power 6

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IGBT Transfer Characteristic

ECE 442 Power 7

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IGBT Used as a Switch

ECE 442 Power 8

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Fairchild FGA25N120AND IGBT

ECE 442 Power 9

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