UJT

Unijunction Transistor
 An UJT is made up of n-type
Construction silicon base to which p-type
emitter is embedded.
The n-type base is lightly doped
,while the p-type is heavily
doped.
The base is divided into two
parts:
1. base-one B1
2. base-two B2

UJT
 When the Voltage VBB is applied
Construction across the two base .The
Voltage across the point A will
be:
VAB1 = VBB .RB1
RB1+RB2
= RB1 (intrinsic stand-off ratio)

RB1+RB2
So,
VAB1 = . RB1

Equivalent Diagram of
UJT
 The value of lies between 0.51
Construction to 0.82.
The resistance RBB can be easily
measured with the help of can
multimeter by keeping the
emitter open circuited.
The resisitance of RB2 is less than
RB1 , because emitter is near to
B2 .

Circuit Symbol
V-I Characteristics of UJT

V-I characteristics of UJT

 V-I Characteristics of UJT

Circuit of V-I characteristics

 V-I Characteristics of UJT
B
V-I Characteristics of UJT
V-I Characteristics of UJT
RC Triggering circuit using UJT
RC Triggering circuit using UJT