DEPARTMENT OF TECHNICAL

EDUCATION,A.P.

Name : B.RAJARAO
Designation : Lecturer
Branch : Electronics & communication Engg
Institute : Govt. Polytechnic, Visakhapatnam
Year/Semester : III Semester
Subject : Electronics -I
Subject Code : EE-305
Topic : Special devices(4/6)
Duration : 50Mts.
Sub Topic : Working of UJT
Teaching Aids : Diagrams

EE-305.38
 Recap

• The device has only one PN junction hence it is

Unijunction device.

• It differ by ordinary diode that it has three terminals.

• Intrinsic stand-off ratio = RB1/(RB1+RB2).

• Typical values of Intrinsic stand-off ratio( η ) is 0.5 to 0.8.

EE-305.38 2
 Objectives

• Upon completion of this period the student will

be able to know

• the terminals of UJT.

• the Intrinsic stand-off ratio.

• about Peak inverse voltage.

• the Working of UJT.

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UNI JUNCTION TRANSISTOR

DEVICE CIRCUIT SYMBOL

EE-305.38 4
 WORKING OF UJT
1

• With emitter open the

voltage VBB is applied
between two bases with
Base2 positive with respect
to Base1.A voltage gradient
established along the N-type
Bar.

• The voltage drop across RB1

is V1.
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 WORKING OF UJT
1

• V1= η VBB where

1

• η =RB1/(RB1+RB2)

• VD is the barrier voltage

of the emitter diode. Then
the Total reverse bias
voltage is V1+VD= η
VBB+VD.

• For Silicon VD=0.7V.

EE-305.38 6
 WORKING OF UJT

1 1

• When emitter supply

voltage VE be slowly
increased, when VE
becomes equal to η VBB,
emitter current IE will
reduce to zero.

EE-305.38 7
 WORKING OF UJT
1

• With equal voltage levels

on each side of diode
neither reverse nor
forward current will flow.
When emitter voltage VE
is further increased, the
diode becomes forward
biased as soon as it
exceeds to the reverse
voltage ηVBB+VD.

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 WORKING OF UJT

N-type Uni junction transistor

• This value of emitter

voltage VB is called peak
point voltage and denoted
by VP.

• VP= ηVBB+VD.

EE-305.38 9
 WORKING OF UJT

• When VE=VP emitter

current starts to flow
through RB1, this
minimum current that is
required to trigger the
UJT is called peak point
emitter current IP.

EE-305.38 10
 WORKING OF UJT

1
N-type Uni junction transistor
• When emitter voltage exceeds
ηVBB+VD then emitter diode
starts conducting.

• When the emitter diode starts

conduction, charge carriers are
injected into RB1 region of the
bar. Hence the resistor of RB1
decreases rapidly due to
additional change carriers.

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 WORKING OF UJT
1

• With this decrease in

resistance the voltage
drop across RB1
decreases. This decrease
of voltage causes the
emitter diode to be
heavily forward biased.

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 WORKING OF UJT
1

• This results large forward

current, consequently
more charge carries are
injected in RB1 region.
This causes further
reduction in the
resistance of the RB1
region.

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 WORKING OF UJT
1

• Thus the emitter current

goes on increasing and
limited by emitter power
supply. The emitter
voltage VE decreases with
the increase in emitter
current.

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 WORKING OF UJT
1

• Hence UJT exhibits

negative resistance
characteristic. UJT is
usually triggered into
conduction by applying
suitable positive pulse to
the emitter.

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 WORKING OF UJT
1

• It can be turned off by

applying a negative
trigger pulse.

• The Base-2 (B2) is used

only for applying external
voltage VBB across it.

EE-305.38 16
 SUMMARY

• We have discussed about

• Working of UJT ,Intrinsic stand off ratio, peak voltage,

peak current and negative resistance.

EE-305.38 17
 Quiz
1.The Uni junction transistor is in on condition which
resistance region is decreases

(a) RBI

(b) RB2

(c) RBB

(d) Both (a) & (c)

 Frequently asked questions

1. Explain the working operation of UJT?

2. Explain the basic principle of] operation of UJT?

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