EE462L, Spring 2014

DC−DC Boost Converter

1
 + vL –
iL Iout
iin
Buck converter
L +
Vin C Vout
iC
–

+ vL –
iL Iout
Boost converter iin
L +
Vin C Vout
iC
–

2
 Boost converter !
+ vL –
iL iD Iout
iin
L +
Vin C Vout
iC
–

This is a much more unforgiving circuit than the buck converter

• If the MOSFET gate driver sticks in the “on” position, then there
is a short circuit through the MOSFET – blow MOSFET!
• If the load is disconnected during operation, so that Iout = 0, then
L continues to push power to the right and very quickly charges
C up to a high value (250V) – blow diode and MOSFET!
• Before applying power, make sure that your D is at the
minimum, and that a load is solidly connected
3
 Boost converter
+ vL –
iL iD Iout
iin
L +
Vin C Vout
iC
–

• Modify your MOSFET firing circuit for Boost Converter

operation (see the MOSFET Firing Circuit document)
• Limit your output voltage to 120V

4
 Boost converter
+ vL –
iL iD Iout
iin
L +
Vin C Vout
iC
–

Using KVL and KCL in the average sense, the average

values are
+0V– Iout Iout
Iin
L +
Vin C Vout
0A –

Find the input/output equation by examining the voltage

across the inductor
5
 Switch closed for DT seconds
+ Vin −
iL Iout
iin
L +
Vin C Vout
Iout –

diL Vin Reverse biased, thus the

 diode is open
dt L
for DT
seconds

Note – if the switch stays closed, the input is short circuited!

6
Switch open for (1 − D)T seconds

+ (Vin − Vout ) −
iL Iout
iin
L +
Vin C Vout
(iL – Iout)
–

diL Vin  Vout Diode closed. Assume


dt L continuous conduction.

for (1−D)T seconds

7
 !
Since the average voltage across L is zero

VLavg  D Vin  1  D  Vin  Vout   0

Vout  (1  D)  Vin  D  Vin  D  Vin

The input/output equation becomes

Vin
Vout  A realistic upper limit on boost is 5 times
1 D

8
 Examine the inductor current

diL Vin
Switch closed, vL  Vin , 
dt L

diL Vin  Vout

Switch open, vL  Vin  Vout , 
dt L
Iavg = Iin is half way between
iL Vin  Vout
A / sec Imax and Imin
L
Imax
Iavg = Iin
Vin
A / sec ΔI
Imin L

DT (1 − D)T

T
9
 Inductor current rating

2
I Lrms 2
 I avg 
1 2
12
2
I pp  I in 
1
12
 
I 2

Max impact of ΔI on the rms current occurs at the boundary of

continuous/discontinuous conduction, where ΔI =2Iin
iL
2Iin
Iavg = Iin
ΔI
0

2
I Lrms 2
 I in 
1
2Iin 2  4 Iin2
12 3
Use max
2
I Lrms  I in
3
10
MOSFET and diode currents and current ratings
+ vL –
iL iD Iout
iin
L +
Vin C Vout
iC
–

2Iin

2Iin

0
Use max

2
Take worst case D for each I rms  I in
3
11
 Capacitor current and current rating
iL iD Iout
iin
L +
Vin C Vout
iC
–
iC = (iD – Iout)
2Iin −Iout

0
−Iout

Max rms current occurs at the boundary of continuous/discontinuous

conduction, where ΔI =2Iout

Use max

I Crms  I out See the lab document for the derivation

12
 Worst-case load ripple voltage

iC = (iD – Iout)

0
−Iout

The worst case is where C provides Iout for most of the period. Then,

Q I out  T I out
V   
C C Cf

13
 Voltage ratings
Diode sees Vout
iL Iout
iin
C sees Vout
L +
Vin C Vout
–

iL Iout
iin
L +
Vin C Vout
–
MOSFET sees Vout

• Diode and MOSFET, use 2Vout

• Capacitor, use 1.5Vout 14
 Continuous current in L
Vin  Vout
A / sec
iL L
2Iin

Iavg = Iin
0
(1 − D)T

 1 
Vin
 Vin Vin   11  D 
V V 1 D 
2 I in  out in  1  D T  1  D  1  D T 
Lboundary Lboundary Lboundary f

Vin D V D
2 I in  , Lboundary  in
Lboundary f 2 I in f

Then, considering the worst case (i.e., D → 1),

use max
V
L  in guarantees continuous conduction
2 I in f
15
use min
 Impedance matching
Iin I out  1  D Iin

+ +
DC−DC Boost Vout 
Vin V
Source Vin Rload  out
Converter 1 D I out
− −

Iin

+
Equivalent from
Vin Requiv
source perspective
−

V
Requiv  in 
1  D Vout  1  D 2 Vout  1  D 2 R
I out load
I in I out
1 D 16
Example of drawing maximum power from
solar panel

PV Station 13, Bright Sun, Dec. 6, 2002

6
Pmax is approx. 130W
Isc
5 (occurs at 29V, 4.5A)
4
For max power from
I - amps

3 panels, attach
29V
Rload   6.44
2

1 4.5 A
0
0 5 10 15 20 25 30 35 40 45
But as the sun conditions
V(panel) - volts change, the “max power
Voc
resistance” must also
change
I-V characteristic of 6.44Ω resistor

17
 Connect a 100Ω resistor directly, extract only 14W

PV Station 13, Bright Sun, Dec. 6, 2002

6
130W
5

4
So, the boost converter

I - amps
reflects a high load 3
resistance to a low
2
resistance on the
14W
source side 1

0
0 5 10 15 20 25 30 35 40 45

V(panel) - volts

To extract maximum power (130W), connect a boost converter between the

panel and the load resistor, and use D to modify the equivalent load
resistance seen by the source so that maximum power is transferred
Requiv
Requiv  1  D  Rload , D  1 
2 6.44
 1  0.75
Rload 100 18
 BOOST DESIGN

Worst-Case Component Ratings Comparisons

for DC-DC Converters Our components
9A 250V 5.66A 200V, 250V 16A, 20A
Output Diode and
Converter Input Inductor Capacitor Output Capacitor Diode and MOSFET
Type Current Voltage Current (Arms) MOSFET Current
(Arms) Voltage (Arms)
Boost 2 1.5 Vout I out 2 Vout 2
I in I in
3 3

10A 120V 5A 120V 10A

Likely worst-case boost situation

L. 100µH, 9A
C. 1500µF, 250V, 5.66A p-p
Diode. 200V, 16A
MOSFET. 250V, 20A
19
 BOOST DESIGN

Comparisons of Output Capacitor Ripple Voltage

Converter Type Volts (peak-to-peak)
Boost I out 5A
0.067V Cf

1500µF 50kHz

L. 100µH, 9A
C. 1500µF, 250V, 5.66A p-p
Diode. 200V, 16A
MOSFET. 250V, 20A
20
 BOOST DESIGN

Minimum Inductance Values Needed to

Guarantee Continuous Current
Converter Type For Continuous For Continuous
Current in the Input Current in L2
Inductor
Boost V 40V
L  in
2 I in f –
200µH

2A 50kHz

L. 100µH, 9A
C. 1500µF, 250V, 5.66A p-p
Diode. 200V, 16A
MOSFET. 250V, 20A
21