EE-215

LECTURE NO 19
Electronic Devices & Circuits
Text Book: Chapter 06 (SEDRA/SMITH 6th Ed)
Bipolar Junction Transistors (BJTs)
6.2 Current–Voltage Characteristics
6.3 BJT Circuits at DC

Instructor: Dr. Farid Gul

Class: BEE 10AB
Electrical Engineering Department
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 Transistor Characteristic Curves
VBE

iC  I S e VT

The iC–vBE characteristic for an npn Transistor.

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 Transistor Curves
(Temperature Dependence)

The iC–vBE characteristic for an npn

Transistor.
VBE

iC  I S e VT

At constant emitter current,

vBE changes by -2 mV/oC
 AE qDn ni 2 
IS   
 N AW 
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 The iC–vCE characteristic for an
IC   I B npn Transistor.

V BE
IS
IB  e VT

0.3 V
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Transistor Curves :EARLY EFFECT

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 Transistor Curves :EARLY EFFECT
The characteristic lines, when
extrapolated, meet at a point on the
negative vCE axis, at vCE = –VA. The
voltage VA is a parameter for the
particular BJT, with typical values in
the range of 10 V to 100 V. It is
called the Early voltage.
(J. M. Early)

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 Transistor Curves :EARLY EFFECT

Increasing vCE increases the width of the In and thus IC increases by

depletion region of CBJ, resulting in a increasing VCB
decrease in the effective base width W
VBE
 AE qDn ni 2 
iC  I S e VT IS   
This phenomenon was first studied  N AW 
by the engineering scientist, J. M. The Early effect is also known as the
Early, thus known as “Early effect” base-width modulation effect

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Modified Transistor Model
(Due to Early Effect)

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Transistor in Saturation

I CSat
 forced 
IB
 forced  

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Transistor in Saturation

I CSat
 forced 
IB
 forced  

vCESat
RCESat 
iCSat
0.1  vCESat  0.3
Approx range 5  RCESat  50

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BJT Model in Saturation

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Example 6.3
For the circuit in Fig. 6.21, it is required to determine the value of the voltage
VBB that results in the transistor operating
(a) in the active mode with VCE = 5 V
(b) at the edge of saturation
(c) deep in saturation with βforced = 10
For simplicity, assume that VBE remains constant at 0.7 V. The transistor β is
specified to be 50.

Solution
(a) To operate in the active mode with VCE = 5 V

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(b) At the edge of saturation VCE = 0.3 V (c) To operate deep in saturation,

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CONDITIONS AND MODELS FOR THE OPERATION OF BJT IN VARIOUS MODES

Cutoff PNP
NPN EBJ: Reverse biased
CBJ: Reverse biased

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Active
EBJ: Forward biased
CBJ: Reverse biased

Saturation
EBJ: Forward biased
CBJ: Forward biased

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 ASSIGNMENT

Work out and understand Examples 6.4 to 6.12

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 ???
NEXT TIME WE WILL STUDY
APPLYING THE BJT IN AMPLIFIER DESIGN

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