Created By : Shreya Suman

Ujala Kumari
 Discovery

 The physics behind it

 Applications

 Personal experiments

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• Observed in 1879

• Edwin Herbert Hall

Via Wikimedia Commons (public

domain)

• Discovered 18 years before the electron

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 Mobile charges pressed to one side from
Lorentz force, immobile charges unaltered

 Creates internal electric potential, known as

Hall voltage.
Note: This refers
to the thickness of
 For simple metals, is V = the metal along
the direction of
the B-field

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From Non-Destructive Testing (NDT) Resource Center

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 Magnitude parameter:

 In metals:

 In semiconductors:

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 Classical Picture: only electrons moving in
same average direction in both hole (p-type)
and electron (n-type) conductivity

 Opposite sign indicates that electrons in

valence bands move in opposite direction
than previously thought

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 Measurement can tell about charge carrier
mobility, concentration

 Conversely, knowing the above allows for

sensitive measurement of an external B-field

 Resistant to outside contaminants unlike

optical, electromechanical testing

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Via LessEMF.com
Via the NDT Resource Center

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 Hall Effect sensors capable of switching very
fast, does not distort like capacitative or
inductive sensors

 Contactless sensing

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 Used expansively in rotating systems

 Anti-lock brakes, motor feedback, ignition

Via Power Systems Design, Ltd. Via Draper, 2005

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 Hall Effect thruster

 Trap electrons in a magnetic field, electrons

ionize propellant, creates thrust

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 QuantumHall Effect

 Spin Hall Effect

 Anomalous Hall Effect

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 Quantization of normal Hall Effect

 Seen at low temperature, high magnetic field

 Very precise, magnitude determined by

Landau levels and electron interaction

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 Separation of electron spins in current-
carrying object, no magnetic field needed

 Predicted in 1971, observed in 2004 via

emission of circularly polarized light

 Universal, present in metals and

semiconductors at high and low temperature

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 Ferromagnetic materials have internal
magnetic field
Via Toyosaki et al.
2004

 Much larger than normal Hall Effect, but not

well understood ; Possible Berry-phase effect
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 Aluminum-doped Germanium 1 sq cm chip

 Van Der Pauw configuration

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Clear temperature dependence! Has to do with electron energy

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 Physics of the Hall Effect

 Popular Applications

 Future Potential

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 Kittel, Charles, Introduction to Solid State Physics, John Wiley & Sons, Inc.. 2005
 Kasap, Safa. Hall Effect in Semiconductors, University of Saskatchewan, 2001
 Non Destructive Testing Resource Center, http://www.ndt-
ed.org/EducationResources/CommunityCollege/MagParticle/Physics/Measuring.
htm , 2004
 Power Systems Design, http://www.powersystemsdesign.com/hall-effect-
sensors-deliver-higher-efficiency-in-brushless-dc-motors?a=1&c=1399#, 2004
 Ando, Tsuneya; Matsumoto, Yukio; Uemura, Yasutada (1975). Theory of Hall Effect
in a Two-Dimensional Electron System. J. Phys. Soc. Jpn. 39 (2): 279–288.
 Spin effect M.I. Dyakonov (2007). Magnetoresistance due to edge spin
accumulation. Phys. Rev. Lett. 99 (12): 126601
 N. A. Sinitsyn (2008). Semiclassical Theories of the Anomalous Hall Effect. Journal
of Physics: Condensed Matter 20 (2): 023201.

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