MAGNETISM FUNDAMENTALS 25.

The law which pertains for any dielectric reflector, this

1. Force of attraction/repulsion is inversely proportional to the 14. Help prove the law of conservation of energy and invented the relationship in which the reflective index is equal to the tangent of
square distance opthalmicroscope. the polarizing angle

Ans. coulomb’s 2nd law Ans. Helmholtz, Heramann Ans. Brewster’s law
Ludwig Ferdinand
2. Capacity of substance to become magnetized 26. Reciprocal of capacitance
15. An insulator can be made conductor
Ans. magnetic susceptibility Ans. elastance
Ans. by ionizing
3. Voltage induced in the inductor to rate 10F change of flux 27. Development of practical transformers
16. Coulomb
Ans. Faraday’s 2nd law Ans. Lucian Gaulard & John Gibbs
Ans. extremely large number of charge
4. Charge magnitude of test charge
17. Atomic number 28. Inventor of kaleidoscope. Polarizing tangent
Ans. -1 charge of electron
Ans. number of protons Ans. Brewster, Sir David
5. A stroke of lightning
18. Volt standard unit of 29. Total electric flux through the surface of a sphere enclosing a
Ans. is a discharge of static electricity net charge of 2 mC.
Ans. electromotive force
6. Worst conductor Ans. 2.26x 10^5 NC^-1m^2
19. Law states that the current in a thermionic diode varies directly
Ans. air with the 3/2 power anode voltage and inversely with the square of 30. Algebraic sum of the... drops of the mmf around a closed loop
the distance between the electrodes providing operating conditions of a magnetizing circuit is equal to zero
7. Investigate the heat and light. He invented the gyroscope. are such the current is limited only by the space charge.
Ans. Ampere's circuital law
Ans. Foucault jean Bernard Leon Ans. child’s law
31. Reluctance is analogous in electrical. And has a unit of At/Wb,
8. Invented the light controlled value. Light houses 20. Light is converted into electricity its reciprocal is

Ans. Dalen Nils Ans. photovoltaic cell Ans. permeance

9. Electromagnetic switch for with 21. US physicist invented the cyclotron and pioneered the 32. A changing magnetic field
production of artificial radioisotopes?
Ans. electromechanical relay Ans. produces a fluctuating electric field
Ans. Lawrence Ernest
10. Investigated the photo electricity 33. Potential gradient at a particular point is numerically equal to
22. Gaussmeter measures flux density using what principle ____ at that point
Ans. Lennard, Phillip
Ans. Hall Effect Ans. electric intensity
11. Best conductor
23. When charge distribution is symmetric, we often used _____ to 34. Discovered meson
Ans. copper simplify electric field calculations
* Yukawa, Hideki(1907-1981)
12. Material with low resistance Ans. Gauss's law
35. An electromagnetic with its core in the form
Ans. is a good conductor 24. The voltage or emf induced when the magnetic field is moving of a close magnetic ring.
or changing and a conductor is stationary
13. Invented the electrical primary cell Ans. toroid
Ans. statically induced emf
Ans. John Frederic
36. Backwards working electric motor is best describe as 47. What will be the current equation in a series RC network
supplied with v=Vm sin 120pt source. The circuit has a power 58. Meter sensitivity control
Ans. electric generator factor pf =0.5?
Ans. linear taper potentiometer
37. Thermionics Ans. Imax sin (120pt + 60)
59. Carbon composition resistors
Ans. Richardson, Owen 48. Biasing in an amplifier circuit
(1879-1959) Ans. are comparatively non reactive
Ans. can be done in with voltage divider circuit
38. Concept of field lines 60. Power factor increase
49. A conductor has a resistance of 10W at room temperature and
Ans. Michael faraday increases to 12W at a higher temperature. Temperature resistance Ans. active power increase
graph is 1/5, what is the temperature coefficient at room
39. Introduced the ultrasound temperature? 61. Bleeder resistor

Ans. Donald, Ian Ans. 0.02per deg. Celsius Ans. are connected across the capacitor in parallel
(1910-1987)
50. The circuit is at resonance 62. A reference point chosen that more branches in a circuit met
40. loses ferromagnetic properties
Ans. when the voltage and current are in phase Ans. node
Ans. curie temperature
51. A 2KW generator will deliver approximately how much current, 63. Temperature coefficient of a wire is... to be .004/ Celsius at
41. Higher capacitance the dielectric must be reliably, at 117V? zero degrees Celsius. What would be the temperature coefficient at
room temperature?
Ans. thin as possible Ans. 17A
Ans. .00360 /deg. Celsius
42. Easily magnetized at both direction 52. The time taken by an alternating voltage v=100sin24... reach
20V for the first time. 64. A circuit breaker is rated for 15A and 117V. This represents
Ans. soft magnetic materials approximately how many kW?
Ans. 15.3ms
43. Elastance Ans. 1.76

*daraf 53. How do you connect cells to form a battery useful for power 65. Power factor (pf) of a series LC circuit is
applications?
=================== Ans. 0
ELECTRICAL CIRCUITS Ans. in series-parallel
66. A set of circuit element that forms a closed path in a network
44. RN= 1000W(ohms) and IN=10A if 4000W load is connected. it 54. Volume control of stereo compact disc. over which signal can circulate.
will have a load current of
Ans. logarithmic-taper potentiometer Ans. loop
Ans. 2A
55. Temperature coefficient of copper 67. Resistor value of 68 ohms is measured with an ohmmeter as
45. a secondary cell whose active positive plate compose of nickel 63ohms. The value is
hydroxide and active negative plate material powdered iron oxide Ans. .00386/ deg Celsius
mixed with cadmium. Typical value when fully charge is Vo= a.2V Ans. 7.4%
56. Significance of connecting load in parallel
Ans. Edison cell 68. in a mesh, the algebraic sum of all voltages and voltage drops
Ans. it allows independent operations of the loads is equal to zero.
46. Apparent power of series RC network is 4000W if R= 6W and
Xc =8W. Calculate the true power. 57. Maximum current a cell can deliver through a .01A load during Ans. Kirchhoff's second law
testing.
Ans. 2400
Ans. flash current
69. R1=60W, R2=80W R3=100W connected in delta. If to be
transform to star. What would be the value of the resistor opposite Ans. 60Hz 91. Which of the following semiconductor materials has the highest
R2? value of mobility?
81. Chosen closed path of current flow in a network. In this current
Ans. 25W path there should be no nodes nor elements that are passed more Ans. InSb or Indium antimonide
than once
70. Transistor can be protected from needless overheating 92. Semiconductor that has the smallest energy gap.
Ans. mesh
Ans. current limiting resistors Ans. InSb
82. The power dissipated by a 10ohms load resistor with a rating of
71. If the line frequency of a parallel ac circuit is less than the 5A is ___. If supplied with 20volt dc potential. 93. Average lattice constant of most semiconductor materials
resonant frequency the circuit behaves as
Ans. 40W ( V2/R ) Ans. 0.5nm
Ans. reactive
83. Current entering is equal to current leaving 94. Device containing more than one diode. an example of full
72. The average value of an alternating voltage v=100sin120pt? wave bridge rectifier IC.
Ans. Kirchhoff's first law
Ans. 70.71 Ans. diode pack
84. First peak of ac voltage V=240sin120pt
73. Admittance is Y= 0.2 - j0.6 95. Depletion from a p-channel IGFET depletion type. The gate
Ans. 240ms should be ___ with respect to the source terminal.
Ans. inductive
85. The sound from a transistor radio is at a level of 50dB how Ans. positive
74. Admittance is Y= 0.2 + j0.6 many times the threshold of hearing is this in terms of sound
power? 96. Type of read diode that uses a heavily doped n-type material as
Ans. capacitive its drift region.
Ans. 100,000
75. Maximum output voltage from a voltage divider Ans. IMPATT diode 6:14
86. A common connection between circuit elements or conductors ****************************
Ans. is equal to the supply voltage form different branches. 97. Other name for compound semiconductors

76. Suppose a sound changes in volume by -13dB if the original Ans. junction Ans. inter-metallic semiconductors
sound power is 1W. What is the final sound power?
87. 10W and Vth=20V, if converted to Norton the equivalent circuit 98. Energy band diagram of a doped semiconductor. The donor
Ans. 50mW RN and IN would be level

77. Resistor rated at 3.3K? Plus or minus 5 percent the value is *10W and 2A Ans. is near the conduction band
between
=================== 99. In statistical mechanics, what distribution function is used in
Ans. 3,135 and 3,465 ohms FUNDAMENTAL ELECTRONIC DEVICES analyzing photons?

78. Electrical device has a resistance of 10W and with 5A constant 88. Energy required for valence electron to move to the conduction Ans. boss Einstein
current source. If the device is rated 100 Vdc. Determine the power band
consumed. 100. A PN junction formed by a suitable material such as indium
Ans. 0.05eV with semiconductor.
Ans. 250W ( I2R )
89. Not true Ans. alloy junction
79. in parallel ac circuit, the line frequency is more than the
resonant frequency Ans. silicon has an oxidation state of negative four 101. in most transistors input equivalent circuit it comprises resistor
and a
Ans. becomes capacitive 90. PN junction reverse bias. Capacitance depends on all except
Ans. voltage source 6:25
80. Frequency of AC if 45 deg. within 120 ms? Ans. frequency

102. Not advantage of semiconductor over vacuum tubes
Ans. ability to withstand high voltages
103. p-type material, electrons are
Ans. minority carriers
104. in a semiconductor diode, the total capacitance that a
capacitance between terminals and electrodes and internal voltage
variable capacitance of the junction called.
Ans. diode capacitance
105. When n and p materials are both diffused into the
semiconductor wafer to provide emitter and base junctions, the
transistor called
112. The amount of voltage needed at the gate source terminal for *Icbo>> Iebo
an enhancement type MOSFET so that a changing is formed for
the current to flow 122. Semiconductor used in xerography
Ans. threshold voltage Ans. Selenium (Se)
113. N-channel enhancement MOSFET has a threshold voltage of 123. Transistor in which a thin metal crystal is overlaid on another
VT=2.5V. if the applied gate source voltage mesa crystal.
Vgs=4V, what is the approximate drain current.
Ans. double-diffused epitaxial mesa transistor
Ans. 0.675mA
124. IDsat=10mA and Vp=4V
114. Alloy junction bipolar RF transistor for which the concentration gm=?
is graded from high on the emitter signal the base wafer to low on
the collector side. This is an internal drift field which accelerates Ans. 5.0ms
current cause raises the upper frequency limit of the transistor.
145. Calculate the threshold voltage of a germanium when it
Ans. drift field transistor operates at 100 degree celcius

Ans. diffused emitter and base transistor 115. Transistor is said to be configured as common emitter. The Ans. .113V
emitter terminal is
106. A diffused transistor in which the base emitter and... 146. When a diode is used in large ac voltages, the resistance that
Electrodes are exposed at the face of the wafer which passivated Ans. not used as an nor output is to be considered is
(has an oxide layer grown on it. to prevent leakage between
surface electrodes 116. Which of the following element configuration that serves an Ans. average resistance
alkali metal
Ans. Diffused planar transistor 147. Time taken by the diode to operate in the reverse condition
Ans. filled-shell-plus-one-electron from forward conduction.
107. Typical range of resistivity of a semiconductor
117. Base from the Shockley’s equation of a JFET, what is the Ans. reverse recovery time
Ans. 10-10^4 W-cm current when the applied voltage is exactly equal to the pinch-off
VP? 148. Two zener diodes connected back-to-back in series.
108. Potential required removing a valence electron
Ans. zero Ans. thyrector
Ans. ionization potential
118. What happen to the conductivity of the channel of 149. Acceptor level in a doped semiconductor
109. When an impurity used in doping produces level... that is close enhancement type MOSFET if the proper gate voltage increased?
to the center of the gap it is called ____ impurity. Ans. near the valence band level
Ans. decreases
Ans. deep state 150. High speed Ic. Which semiconductor is best to be used?
119. The boundary between the energy level and the empty level in
110. Cutoff frequency of a JFET is dependent on changing the a semiconductor material. Ans. gallium arsenide
length by a factor of
Ans. Fermi level 151. Slowest mobility
Ans. 1/L^2
120. The time required for forward voltage or current to reach *Alp
111. Microalloy transistor having a uniform basis region that specified value after switching the diode from its reverse-to-forward
diffused into the wafer before the emitter and the collector biased state. 152. Energy gap between valence band and the conduction band
electrodes are produced by alloying. of the semiconductor
Ans. forward recovery time
Ans. microalloy-diffused transistor Ans. one electron volt
121. Collector cut-off Icbo related to the emitter cut-off current Icbo (1eV)
153. Early version of FET Ans. planar transistor
Ans. fieldistor 165. Mechanical diode whose negative resistance depends on a
spherical of quantum - mechanical bond structure of the material.
154. Device formed when an n-type and p-type semiconductors are
brought together Ans. Gunn diode
Ans. junction diode 166. in BJT made by first growing the emitter... the base region is
diffused while the crystal is being pulled
155. b=100 Icbo=1mA. What is the value of Iceo?
Ans. grown-diffused transistor
Ans. 100mA
167. In MOSFET, it is the foundation upon which the device be
156. Unimportant factor concerning the frequency at which the P-N constructed and is formed from a silicon base.
junction will work effectively is
Ans. substrate
Ans. reverse current
168. What capacitance is significant when the diode is forward
157. Advantage of silicon over germanium biased?
Ans. low leakage current Ans. diffusion capacitance
158. Crystal lattice in Si and Ge 169. Transistor in which the semiconductor wafer is stretch down in
steps so the base and emitter regions apply physical plateaus
Ans. Face centered cubic (FCC) above the collector region.
159. Operating a diode at high speed switching circuits, the most Ans. mesa transistor
important parameters to be considered
170. Graph of the product of collector-emitter voltage ad the
Ans. reverse recovery time collector current in the transistor output characteristic curve.
160. Semiconductor that is good for high temperature applications Ans. maximum power curve
Ans. silicon carbide (SiC) 171. Diode supplied with a forward direction but the with a
magnitude less than the threshold voltage diode. Still not "turn-on"
161. at room temperature, and will only allow a small amount of current to pass.very small
In a perfect silicon crystal, the equilibrium concentration of current known as.
thermally generated in the conduction n band is about
Ans. 1.5x10^10 per cubic cm. Ans. cut-off current
162. Typical range of power dissipation for a semiconductor 172. Maximum dissipation of 5mW at room temperature and
considered as "low power" or "small signal" linear power dissipation factor of 5.0mW/deg Celsius How
much power the diode can handle at 50 deg. celsius?
Ans. less than 1 watt
Ans. 375mW
163. Every increase in the operating temperature diode will cause
its reverse saturation current to 173. Resistance of semiconductor is known as
Ans. double Ans. bulk resistance
164. Transistor in which the emitter, base and the collector 174. Planar epitaxial transistor which has been passivated protects
elements terminate on the same plane of the silicon. the exposed junctions.
Ans. planar epitaxial passivated transistor
175. Bipolar transistor in which the base region has been diffused
in the semiconductor wafer.
Ans. diffused base transistor
176. Energy required by a valence electron before it can transfer
towards the conduction band
Ans. energy gap
177. Usually, a PnP transistor is made by means of electron and
electron plating. The emitter and collector are form opposite sides
of a semiconductor wafer by training jets of electrolyte against its
opposite surfaces to then electroplate the surfaces.
Ans. surface-barrier transistor
178. Combination of the inductance of the leads and the
electrodes. Capacitance of the junction, and the resistance of the
junction semiconductor diode
Ans. diode impedance
179. MESA transistor whose base is an n-type layer diffused into a
p-type wafer, the p-type wafer serves as the collector. Its emitter is
a small p-type area diffused alloyed with the n-layer
Ans. diffused-mesa transistor
180. Semiconductor that has the highest heat conductivity therefore
used as a heat sink
Ans. diamond
181. in forward bias condition, voltage is increased the resistance
Ans. will decrease
182. B-E is reverse bias and B-C is forward bias. What region of
operation
Ans. cut-off region
183. Impurities with energy level or states close to the band edges
called
Ans. shallow states
184. Mobility of electron and holes in a semiconductor is affected
mainly by what scattering mechanism?
Ans. impurity and lattice scattering 196. Semiconducting glass is known as
Ans. alloy diffused transistor
185. n-channel JFET Idss=10mA Vp=4V Vgs=2 calculate the Id. Ans. amorphous semiconductor
207. The appearance of RF current oscillations in a dc biased stab
Ans. 2.5mA 197. Transistor in which one or both electrodes are created for of n-type gallium arsenide in a 3.3KV electric.
diffusion.
186. Junction transistor made by adding different impurities Ans. Gunn effect
successively to a crystal in its molten state and the slicing the Ans. diffused transistor
resulting NPN formations from the finished crystal. 208. What semiconductor that is mostly used in devices the
198. P-N junction does not conduct emission or absorption of lights.
Ans. grown junction transistor
Ans. reverse bias Ans. compound semiconductor
187. What happen to the channel of a JFET as current pass to it?
Ans. skews 199. What is the basis in operation of semiconductor 209. Silicon material has an intrinsic concentration of 10^10
photoconductors? cubic centimeter at room temperature. If it is doped 10^15
188. Silicon diode has a reverse saturation current of 50mA at antimony atoms per cubic centimeter
room temperature. if the operating temperature increased by Ans. EHP optical generation Ans. 10^15
50deg celsius what is the reverse saturation current?
200. If the reverse bias exceeds the avalanche voltage in a junction 210. for an electroluminescent of green and red lights. What
Ans. 1.66mA semiconductor is best?
Ans. the junction will conduct current
189. Current flow in a semiconductor that is due to the applied Ans. gallium phosphide
electric field. 201. A transistor having a tiny emitter and collector electrodes are
formed by alloying a thin film of impurity material. 211. Operating temperature of a reverse diode increased, its
Ans. drift current leakage or reverse saturation current
Ans. microalloy transistor Ans. increase exponentially
190. FET with wide and short effective channel (MAT)
212. Calculate total carrier mobility in a semiconductor
Ans. V-MOSFET 202. The movement of charge carriers in a semiconductor without impurity scattering mi=0.25m^2/vs
the application of electric potential and lattice scattering mL=0.3m^2/vs
191. A semiconductor that is classified as a metalloid or semi metal
Ans. germanium (Ge) Ans. diffusion current Ans. 0.14 m^2/vs

192. Semiconductor material has the highest energy gap? 203. To switch off the depletion type MOSFET, the channel should 213. A diode is specially process so that its high current flow takes
be depleted. Depletion of the channel is done applying enough place when the junction is reversed -biased a variation of tunnel
Ans. zinc sulfide (ZnS) voltage across the gate-source. What do you call this voltage? diode

193. Quantum statistics, the most suitable function to be in Ans. pinch-off voltage Ans. backward diode
molecular analysis of gas is
204. Semiconductor that is doped with donor and acceptor 214. a silicon sample at equilibrium has an electron
Ans. Maxwell-Boltzman impurities concentration of 15x10^10 /cm3 and is doped with 10^10
donor. Calculate the minority carrier concentration
194. The process of growing thin film on the surface on planar Ans. compensated semiconductor
semiconductor device to protect the exposure junctions forms Ans. 1.20x10^15
contamination and shorts. 205. Formed when n-type and p-type semiconductors are brought
together 215. What is used in the study of behavior of free electrons?
Ans. passivation
Ans. pn junction Ans. Firmi-dirac
195. Restriction of certain discrete energy level in a semiconductor
material can be predicted generally using what model. 206. Transistor in which the base is diffused and the emitter is 216. Selenium works especially well in
alloyed,
Ans. Bohr model the collector is provided by the semiconductor substrate into which Ans. photo cells
alloying and diffusion are after.
217. The voltage across the gate source terminal of a FET causes Ans. transition capacitance Ans. transistor circuit that is more sensitive to test variable and
ID equal to zero. therefore undesired.
228. How much impurity concentration is needed for same silicon
Ans. pinch-off voltage to change it s electrical property from a poor conductor to a good 238. for high density IC involving many op amps. What packaging
conductor? is suitable
218. in a diffused transistors, what do you call the figure expressed
as the ability of material carrier to diffuse? Ans. one p art per million Ans. SMT

Ans. diffusion constant
219. Hybrid parameter that is usually neglected in most analysis
Ans. hr and ho
220. in an n-channel Enhancement MOSFET the gate voltage
should be ____ with respect to the source in order to produce or
enhance a channel.
Ans. positive
221. The resistance of the diode that is significant when operating
with a small ac signal.
Ans. dynamic resistance
222. in semiconductors what scattering mechanism that has the
smallest effect?
Ans. crystal imperfection scattering
223. Holes flow the opposite way from electron because
Ans. charge carriers are passed from atom to atom
224. What is the total charge at the nucleus of silicon atom.
Ans. 14eC
=========================
ELECTRICAL CIRCUIT ANALYSIS
229. Combination of several diodes in a single housing.
Ans. diode array
230. What is true about the external frequency compensation
capacitor?
Ans. the lower its value, the wider is its bandwidth
231. Calculate the stability factor due to the variation of Icbo
from 1nA to 21nA when the temperature changes from room
temperature to 100 deg cesius.
Ans. 25
232. A push pull amplifier that uses either NPN or PNP as its stage.
The circuit configuration looks like the complementary symmetry.
Ans. quasi complementary push pull amplifier
233. Advantage of a crystal controlled oscillator over...
Ans. low drift
234. What will happen to the magnitude of the load line. The load
resistance is increased?
239. A method of producing IC by photograph pattern of the circuit
on a suitable light sensitized of semiconductor and chemically
etching away undesired portions of the surface
Ans. photolithographic process
240. Large signal dc amplifier using opamp. Which part has the
least effect on its performance?
Ans. drift
241. A 2 stage transistor amplifier in which the output configuration
of the first stage provides input to the emitter of the second stage.
The final output is then taken from the collector of the second stage
or last stage.
Ans. cascode configuration
242. Famous transistor amplifier configuration designed to
eliminate the so called miller effect.
Ans. cascode amplifier
243. Opamp’s negative feedback
Ans. control the gain
244. When a capacitor is involved at the output circuit of a
transistor amplifier it would mean.

225. Calculate the probability that a state at the bottom of Ans. decrease Ans. a different dc and ac load line
conduction band is occupied at a temperature... Assume that the
fermi energy level is in the middle gap 235. If an opamp is used to amplify small ac signals. What 245. The reason why a slight difference between the input current
parameter you should greatly consider to ensure best occurs in opamps is due to the unsymmetrical circuit component
Ans. 0.02 performance? parameters. This unsymmetrical condition also produces a
difference in input voltage. What?
226. Energy level that has a free electrons Ans. frequency response
Ans. input threshold voltage
Ans. below fermi level 236. Capacitance values depends 246. Frequency synthesizer has

227. When a diode is reverse biased the depletion region... since it Ans. signal frequency Ans. exceptional stability
is in between positively charge holes and negatively charge
electrons. it will have an effect pm capacitor. This capacitance is 237. Higher the stability factor means 247. In IC fabrication, the substrate usually produced
called what?
Ans. Czhocralski process
 258. A silicon diode is in parallel with a germanium diode and
248. The introduction of impurities into a semiconductor in hot connected to a load resistor having a value of 20kW a forward
furnace during IC fabrication supply voltage of 10V. What is the approximate voltage across
the silicon diode?
Ans. diffusion
Ans. 0.03V
249. Q point of class D amplifier can be set or possible what region
in the load line? 259. A bipolar transistors or JFETS is a multivibrator are connected
in
Ans. any of these
Ans. common emitter or common source arrangement
250. Slew rate of 0.5V, the maximum output voltage desired is
5V maximum signal? 260. Primarily, op amps are operates with a bipolar power supply.
However, we can also use single polarity power supply.
Ans. 16 kHz
Ans. generating a reference voltage above ground
251. Transistor configuration used at the output complementary
stage of most op amps. 261. A signal mixer which operates by virtue of the nonlinearity of a
forward-biased semiconductor.
Ans. common collector
Ans. diode mixer
252. Op amps whose internal transistor biasing can be constructed
externally are categorize as 262. What is the effect pf the input offset voltage to the output
voltage if the opamp has no feedback element?
Ans. programmable op amps
Ans. causes the output to saturate either toward
253. A channel carries several signals at once. Which type might 263. Which of the isolation technique in IC fabrication most
be used to select one of the signals receptions? commonly used?
Ans. 6,324
269. For a battery operated transistor circuit. Where is the good
position of the Q in order to maximize the battery consumption?
Ans. near cut off region
270. How will you minimize the output offset voltage due to input
offset current of an opamp?
Ans. by installing a bias current compensating resistor
271. What is the approximate output impedance of a common
emitter fixed bias configuration? The collector resistor Rc is the
only load resistance.
Ans. Rc
272. Distortion that is due to the inability of an amplifier to have
equally well all the frequencies present at the input?
Ans. amplitude distortion
273. Which of the following is not an advantage of IC over discrete
components?
Ans. greater power capability

Ans. multiplexer/demultiplexer Ans. junction isolation 274. Covering or coating on a semiconductor surface to.. masked
area for selective etching or deposition
254. What amplifier is appropriate to use, if for a given transistor 264. What will happen to the position of the Q point if the resistance
amplifier beta is the only parameter available and want to solve for base resistor is increased? Ans. masking
its input and output impedances?
Ans. it moves downward 275. A FET is biased with a voltage divider configuration and set at
Ans. dynamic model the active region. Ideally, what is the gate current?
265. The frequency at which the open loop gain of an op amp is
255. A bridge rectifier having diodes in two arms and resistor in the 0.707 times its value at very low frequency Ans. zero
other two?
Ans. break frequency 276. Not advantage of CMOS
Ans. half bridge
266. in which of the following FET amplifier types does drift current Ans. ability to work at high speed
256. Reduction of opamps gain due to increasing operating flow for 50% of the signal cycle?
frequency 277. Efficiency of 66% output power 33W, the dc collector input is?
Ans. class B
Ans. roll off Ans. 50W
267. How does the emitter bypass capacitor affect the dc line?
257. Calculate the 2nd harmonic distortion for an output having 278. An op amps must have at least how many terminals?
fundamental amplitude of 3V and a second harmonic amplitude of Ans. it does not affect the dc load line *14 terminals
0.3V
268. The mA741 op amp has a CMRR of 90dB and a differential 279. In IC fabrication, the photo sensitive emulsion coated wafer
Ans. 10% mode voltage amplification of 200000. What is the amps common surface to be masked is called.
mode voltage gain?
Ans. photoresist Ans. ion implantation
291. Which of the following devices would you be least to find an IC Ans. dynamic model
280. The conducting material that is mostly used to interconnect as the main component?
components on chips during metallization process. 302. The frequency at which a crystal oscillator functions is
Ans. a radio broadcast transmitter's final amplifier determined mainly by.
Ans. germanium
292. What do you call an amplifier that is biased to class C *thickness of the crystal
281. Class A circuit would not work well as modulates over the same portion of the curve as if biased to class
B. 303. When the transistor is operating at saturation region. A current
Ans. A television transmitter PA best determined by using what model?
Ans. class BC
282. Negative feedback in an amplifier Ans. ebers-moll model
293. In a diode capacitor voltage quadrupler, what is the Vc across
Ans. reduces the gain the third stage capacitor? 304. A LED is to be used in a circuit with supply voltage of 5V.
What should be the value of resistor needed but the LED to operate
283. A form of diode checker that displays the entire diode Ans. 2Vmax normally?
response curve in an oscilloscope screen.
294. Which of the following amplifier classes generally need the Ans. 250W
Ans. dynamic diode checker most driving power?
305. A method of introducing impurities in IC fabrication which the
284. An opamp has a specified transient response rise time 0.3ms. Ans. class B appropriate ions are carried by an accelerating.
Calculate its unity gain bandwidth.
295. A semiconductor diode circuit using carrier storage transistor Ans. ion implantation
Ans. 1.167MHz action and accordingly pulse amplification obtained by alternately
making one electrode of the ... of an emitter or collector. 306. Oscillation requires
285. In most ac amplifiers using opamps. The feedback shunted
with a very small capacitance. What is the purpose? Ans. crystal amplifier Ans. stage with gain

Ans. to minimize high frequency noise 296. What do you mean by internally compensated op amps? 307. IC type which determine whether a voltage is same or not?

286. T-equivalent circuit for transistor is considered as a __ Ans. op amps with internal frequency compensation to prevent Ans. comparator
representation oscillation
308. For pulse amplification, class D amplifier is mostly used. How
Ans. physical 297. A radio frequency oscillator usually efficient is a class D amplifier?

287. Transistor arrangement that operates like Darlington uses a Ans. has most or all of its energy at a single frequency Ans. efficiency reaches over 90%
combination of PNP and NPN transistors... both NPN.
298. The power gain that is lost due to the emitter bias results can 309. What do you call the process of interconnecting the
Ans. feedback pair be recovered by components in an IC during fabrication?

288. The position of the Q point along the load line is greatly Ans. shunting a by pass capacitor Ans. Metallization
affected by what component?
299. Passivation of semiconductor wafer by forming layer insulating 310. Calculate the output offset voltage of an inverting
Ans. base resistor oxide on the surface. amplifier using op amp with an input offset current of 10nA.
Circuit is having an input resistance of 10kW and feedback
289. A passive switching circuit of biased diodes. Ans. oxide passivation resistance of 100kW.

Ans. diode gate 300. An opamp zero crossing detector without hysteresis. Ans. 1.0mV

290. An alternative method rather than diffusion in introducing Ans. has no feedback 311. The removal of the remaining photoresist in the wafer etching
impurities into a semiconductor wherein the impurities made to during IC fabrication.
penetrate into the wafer by an ion beam. 301. What transistor model that uses a parameter value that
directly derived from the operating condition? Ans. stripping

312. Approximate the noise op amp of an inverting adder using op
amps if it has five inputs.
Ans. six (6)
313. The removal of the unmasked silicon dioxide (SiO2) at wafer
surface in IC fabrication.
Ans. etching
314. Transistorized class C power amplifiers will usually have
efficiency of
Ans. 33%
315. Two class B amplifier connected such that one is positive
cycle and the other amplifies the remaining negative cycle. Both
output signals are then coupled transformer to the load.
Ans. transformer coupled push pull amplifier
315. How can a class B amplifier be made suitable for the hi
application.
Ans. by using two transistors in push pull
316. Most planar ICs, what do you call the layer that… the surface
of the chip from external contaminants
Ans. Oxide layer
317. A diode type ac voltmeter in which the deflection of the
milliammeter or
Micro-ammeter is proportional to the value of the applied ac
voltage.
Ans. diode peak voltmeter
318. Which comes first in the planar process in fabrication?
Ans. crystal growth
319. A resistor between the base of an NPN bipolar transistor. The
positive supply voltage is used to
Ans. provide proper bias
320. A semiconductor diode that’s operating simulates the
transistor means of pulsed operation that alternately make the
single junction an emitter or collector
Ans. diode transistor
321. An op amp inverting amplifier uses a feedback resistor 100kW
and input resistor of 10kW. If the op amps offset voltage is 2.0mV.
Approximate the amplifier offset voltage due to this input offset
voltage.
Ans. 22mW
322. Isolation devices in IC by forming an oxide layer around each
devices is known as oxide isolation and this is good example of
Ans. dielectric isolation
323. Broadband amplifier
Ans. generally easy to use
324. Frequency at which the voltage gain of op amps reduces to
unity.
Ans. unity gain bandwidth product
324. If load impedance for an oscillator is too high
Ans. no cause for worry, it can not be too high
325. Oscillator fail to start except
Ans. in phase feedback
326. Calculate the change in collector current due to the... In Ico for
a transistor circuit at 100deg celsius. Ico at room temperature is
given to be 0.1nA and increases Ico at 100 deg. celsius. The circuit
stability factor S (Ico)?
Ans. hindi madecode eh hahaha pero ito yung mga wag pipiliin
(6.63nA,19.9nA,59.7nA) pwede bumati? Hi pala kila papa daven,
Richard at sa magjowa na si Jm at Fabiedie
327. The diode that rectifies a part of the output signal of an
amplifier and provides a proportional dc voltage for an agc bias
Ans. feedback rectifier
328. The load line position is dependent of
Ans. the load resistance and supply voltage
329. When troubleshooting typical transistor amplifiers in the active
region, Vce is usually ____ the supply voltage Vcc
Ans. about 25% to 75% of
330. A technique used for obtaining a relatively large single crystal
from a semiconductor material. The processing consist essentially
of dipping a tiny seed crystal in crucible of molten mass of the
same substance as slowly withdrawing it while rotating.
Ans. Czochralski method
331. Acoustic feedback in public address system
Ans. serves no useful purpose
332. A rectifier type ac meter consisting of a semiconductor
(usually point contact type) or a combination of diode and dc
milliammeter or micro-ammeter. The diode rectifies the ac input the
resulting dc deflecting the
Ans. diode type meter
333. An amplifier utilizing hole storage effects in a semiconductor
diode
Ans. diode amplifier
334. Thin film IC refers to the film thickness
Ans. approximately 1mm
335. Ideal op amp requires no input current but real op amp needs
a very small input current called input bias at both inputs. The bias
currents have a slight difference. What do you call this difference?
Ans. input offset current
336. Which bipolar amplifier type has some distortion in the wave
with collector current during most, but not all, on cycle?
Ans. class AB2
337. What type of amplifier commonly used at the output stage
opamp?
Ans. complementary amplifier
338. What is the maximum output voltage swing of an opamp?
Ans. +Vsat and -Vsat
339. In counters and computers an array of horizontal and vertical
wires with some intersections being interconnected through diodes.
Whose polarities... circuit operation?
Ans. diode mixer
340. A diode employed in a TV receiver circuit to separate delivers
the sync pulses form the composite video signal
 Ans. become less negative
Ans. Diode sync separator Ans. diode chopper
352. Varactor diode
341. Ideally, the output voltage of an op amp is zero when there is 362. The stage followed by the output complementary in op amp
no input signal, however in practical circuit, a output voltage Ans, good for use in frequency synthesizers functional block diagram.
appears, this voltage is known as
353. The non-inverting and inverting inputs of an op amp has Ans. level shifter
Ans. output offset voltage input voltage of 1.5mV and 1.0mV respectively. Op-amps has a
common mode voltage gain of 10 and differential mode gain of 363. Class C
342. IC over discrete components 10000 what is the output voltage?
Ans. higher switching speeds are attainable Ans. not linear
Ans. 5.0125V
343. The current needed at the input of an op amp to operate 364. Change in input offset current due to the temperature change
normally 354. Is the process of making the semiconductor chip insensitive to
any contaminations that might cause parameter or premature Ans. input offset current drift
Ans. input bias current failure?
365. In analyzing the quiescent currents and voltages, on a load
344. What is the noise gain of op amps? Ans. passivation line do you refer?
Ans. dc load line
Ans. 1+Rf/Ri 355. The transistor model that is best suited for high frequency
applications 366. The purpose of a level shifter op amp
345. The process used to grow a layer of single crystal
semiconductor as an extension of the existing crystal wafer of the Ans. Giacelleto model Ans. to set and/or adjust the output voltage to zero
same material.
356. In most IC fabrication, how is the connection pattern between 367. Loading control in a tuned power amplifier
Ans. epitaxial components defined?
Ans. provide an impedance match between the transistor or FET
346. Tuned power amplifier must always be Ans. by masking and the load

Ans. adjusted for maximum power output 357. For ac amplifier using op amps what parameters.. Its 368. Means of insulating an IC chip form the substrate. The chip is
performance surrounded by a PN junction reverse biased. This prevents
347. Half wave rectification means conduction between chip of the substrate
*slew rate and frequency response
Ans. half of the ac wave is chopped off Ans. diode isolation
358. The output offset voltage of an op amp is due to the input
348. Push pull uses NPN and PNP transistors amplify the positive offset current and voltage. If 1 mV is due to the input current 369. Fabricating IC using planar technology, what is the method of
and negative cycles respectively and 22mV due to the input offset voltage, the total output adding impurities?
Ans. complementary symmetry amplifier offset voltage of the opamp?
Ans. diffusion
349. What will happen to the magnitude of the load line when the Ans. 23mV
load resistance is decreased? 370. Amplifier for AM or FM
359. Devices or components such as transistors and diode mostly
Ans. it will increase fabricated in ICs by Ans. class S

350. for most common emitter configuration with different methods Ans. diffusion 371. Not practical for fabrication of IC
of biasing, what is the maximum stability due to the change of the
reverse saturation current Ans. inductor
360. Colpitts
Ans. b+1 372. What is the most effective way of minimizing the output offset
Ans. split capacitance in the tuned circuit voltage of an op amp?
351. One method of stabilizing transistor circuits is to add emitter
resistance. This resistance causes the load slope to 361. Chopper employing an alternately biased diode as switching Ans. by properly using and adjusting the offset null
element
373. Circuit having one or more biased diodes used for noise
peaks exceeding a predetermined maximum.
Ans. Diode noise limiter
374. Different sounds of musical instruments
Ans. differences in the wave shape
375. D2=10%, D3=5% and D4=1%. What is the %THD?
Ans. 11.22%
376. Another name for Giacolleto model
Ans. hybrid pi model
377. Ferromagnetic core not generally used for RF
Ans. air core have better thermal stability
378. In monolithic ICs electrical isolation between devices same
substrate is achieved by fabricating them in an electrically isolated
region known as
Ans. isolation pockets or tubs
379. The term monolithic Greek words monos and lithos
Ans. single and stone (single stone)
380. Diode mixer
Ans. diode converter
381. What must be the slew rate of an op amp to be used in order
to produce an undistorted output voltage of 15V?! with frequency of
100,000 rad/sec.
Ans. 1.0 V/msec 6:41
382. Disadvantage of transfer coupling, as oppose to capacitive
coupling is that:
Ans. transformer cost more
383. Typical value of external frequency compensating capacitor of
op amps.
Ans. 0.3 to 30mf
384. Calculate the CMRR of an opamp having a common mode
gain of 10 and a differential mode gain of 100,000.
Ans. 80dB
385. Method of doping that is used in producing… regions in an IC?
Ans. ion implantation
386. Diode or network of diodes employed to make a linear current
voltage curve to take some other shape.
Ans. diode curve changer
387. Type of digital IC is least susceptible to noise?
Ans. transistor-transistor logic
388. Class of amplifier with highest efficiency.
Ans. class D
389. In op amp analysis, the input offset voltage is represented by
Ans. a battery
390. How can we minimize the effect of the input offset current and
input offset voltage at the output offset voltage?
Ans. by making the feedback resistance small
391. Dual in line or DIL package is designated as
Ans. TO 116
392. Classification of ICs according to functions includes the digital
microwave. Which of these classes group relies on hybrid
technology?
Ans. microwave ICs
393. A network with a diode an a capacitor that is used in the dc
level of the input signal.
Ans. clamper
394. The approximate value of the bias current compensation
resistor in op amps circuits
Ans. equal to the parallel combination of the input 395. Type of
diffusion in which the impurity concentration at semiconductor
surface is maintained at the constant ... through out the diffusion
cycle.
Ans. constant source diffusion
396. What do you call a test probe containing a diode ... as either a
rectifier or demodulator?
Ans. diode probe
397. An op amp is wired as an inverting amplifier with an input
feedback resistance of 1kW and 100kW respectively. When the
input signal is set to zero. the output was found to have an offset
voltage of 101. Calculate the input offset voltage.
*1.0mV
398. the most popular op amp packages are the metal can DIP and
the SMT. which of these corresponds to IC 99?
Ans. metal can
399. The magnitude of the op amps input offset voltage best can be
classified as low input offset voltage op amps
Ans. 0.2mV
400. An over voltage protection circuit employing a zener diode and
an SCR whose function is to produce high over by pass current on
a circuit
Ans. crowbar
401. What stability factor that gives the highest value for a voltage
divider bias transistor circuit?
Ans. S (Ico)
402. A radio field strength meter which consist essentially LC tuned
circuit diode detector, and dc milliammeter meter deflection is
roughly proportional to the RF voltage.
Ans. diode field strength meter
403. What type of FET that can be biased with both negative and
positive gate source voltage?
Ans. MOSFET depletion type
404. Diode circuit that is used to cut a portion of the input...
*clipper
405. for a fixed biased transistor circuit, what will happen to the
point
when the operating
temperature rises? *high input impedance 417. the force between two
*it moves upward
___________17:23 411. this applies to a electrically charge object
========================== *electrostatic force
nonradiative transition of
========================== 418. the torque that is
ENERGY CONVERSION an atom. non excited
& ELECTRONIC produce due to the effects
energy state at a lower
INSTRUMENTATION of current voltage in
energy state.... by the
instruments.
406.continuously adjusts emission of an electron *deflecting torque
*auger effect
the triggering point of 419. a 12V auto battery is
412. the portential at the
the input rated at 36Ah, if a 100W,
*trigger level screen and the helix of
12V bulb is connected
407. one advantage of the display in
across this battery, about
cumulatively compounding oscilloscope is typically
*12kV how long will the bulb
motor if it does not run
413. damping method is stay lit, if the battery
widely at light load, this
generally used in has been fully charged?
feature is *4 hours and 20 minutes
*shunt winding dynamometer:
*air friction 420. calculate the C1
408. when a dc motor has
414. an oscilloscope required to compensate a
no load, what will happen
cannot be used to indicate 10V probe when the
to the emf? *energy
*becomes maximum oscilloscope input
415. a____ is a device
409. it is situted between capacitance is 30pF and
which produces simple
the vertical and the coaxial cable
repetitive waverforms
horizontal deflection *function generator capacitance is 100pF.
*
plates. 416. in digital _____________19:24
*isolation shield
oscilloscope, the sample 421. is an adjustable
410. voltage measurement
points from the ADC stored period of time during
in a high impedance
in memory as which the oscilloscope
circuit region voltmeter *waveform points
_________________19:20 cannot trigger. this
with
feature is useful when you by a factor of 2.5
have a rear connector *vernier knob
are triggered on a
for... modulation inputs. 434. in indicating
complex waveform shapes so *z-axis modulation
instruments. most
that the oscilloscope 428. instruments that give
efficient method of
triggers on the first the quantity to be
damping.
eligible trigger point. measured in the *eddy current damping
*trigger hold off
instrument constant and 435. it is used to locate
422. cathode is typically
its deflection. a display that has been
held at approximately *absolute instruments
*2kV shifter off the screen
429. dynamometer mostly * beam finder
423. bridge circuit that
used in 436. advantage of an
determines the unknown *wattmeter
electromagnet over
inductance in terms of 430. quite complex figures
permanent magnet.
resistance and capacitance may be produced with sine *electromagnet meter is
*Owen bridge
wave having different more rugged
424. accuracy of the V/div
frequencies. 437. the sawtooth voltage
sensitivity is typically * figure_____________19:36
of a horizontal sweep
specified 431. attenuatro probes
*+-3% generator produce by
attenuate the input signal *sweep generator circuit
425. what are the forces
usually the factor of 438. in digital
acting on the pointer of *________________19:37
oscilloscope. the number o
the indicating instrument 432. in application where
f waveforms... to make a
when it is in motion? a high torque is needed
*controlling, damping and waveform record is called
during ... a ___motor is
deflecting torques the
preferred. *record length
426. meter movement in an *______________19:38
439. the voltage required
illumination meter 433. provides continuous
to produce one division of
measures volts/div adjustments, to
*voltage deflection on the screen
reduce display amplitude
427. most oscilloscopes is referred to as
*deflection factor 445. deflection produced
battery depends on
440. the central conductor by 1V(cm/V) is termed *physical size
*deflection sensitivity
carries the input signal 453. a video signal
446. factors that affect
and the circular conductor generator is a device
friction and winding loses
is grounded so that it which outputs
in dc motor *Video/or television
acts as... help prevent *speed
waveforms, synchronization
unwanted signals to be 447. because of the 10fold
signals, colorburst
picked up by the attenuation of attenuator
signal, audio signal
oscilloscope input. probe.
*1:1 probe *___________19:58 454. a cell of 1.5 V

441. grid potential 448. can be used in ammeter.
A. magnetic effect
control also known as B. thermal effect
*brightness control C. electrostatic effect
D. electro-magnetic effect
442. an interactive solar
Ans. A, B & D only
power system __________________20:15
*allows a homeowner to
449. moving iron
sell power to the utility
instrument have a scale
443. a thermal type of
function that is
maximum demand indicator *squared
supplies 100mA for seven
hours and ?? minutes and
then it is replace.
*_____________---20:22
455. the zero adjust
control in an analog type
ohmmeter is to
*compensate for the
differing internal battery

that is on the effect of 450. RF meters are used 456. it selects internal

increase in temperature mainly trigger source. which

*wright maximum demand *_________________20:18
spots RF distribution means that tthe time base
indicator
system problem. is triggered from one of
444.if a meter with a full
451. RF field strength the input waveforms.
scale current of 100mA is *int button
meter express the field
used as voltmeter with 457. a sampling method
strength as power density
halfwave rectification. *0.001 to 2000 used in digital

its ac sensitivity is microwatts/sq.cm oscilloscope the collects

*_________________19:53
452. energy of cell or few sample points of the
 *nickel meter can be constructed
signal in a single... then
464. thickness of the from
used interpolation to *electrodynamometer
trace approximately
display the waveform. *5% of one vertical 472. two inputs are
*real time sampling
division alternately and repeatedly
458. defined the amplitude
465. best bridge used for traces on the screen, it
of the input voltage that
precise measurement of is said to be operating in
is displayed on the screen *alternate mode
*sensitivity inductance over a wide _______________20:52

459. grid dip meter use range 473. 2 major components of

*anderson bridge
what active device sweep generator
*vacuum tube 466. weston cell ______________20:54
*voltage reference source
460. measuring instrument 474. to minimize arcing
467. utility meter's motor
that uses their force during starting of dc
speed works directly from
repulsion between fixed *number of watts being motors, a resistor should

and movable magnetized used at the time be added to limit the

vanes, or the force 468. focusing electrodes current inthe

*armature winding
between a coil and a A1, A2 and A3 are
475. Voss Mccartney noise
pivoted vane shape piece sometimes referred to as
*_____________lens 20:47 generator
of soft iron to move the *squared pulses
469. instruments measures
indicating... 476. instruments whose
*vane type instrument temperature by electric
____________20:32 deflection gives the
mean/beyond the range of
461. loop test that has a magnitude of electrical
mercuric temperature
provision for measuring *pyrometer quantity to be measured

the loop resistance 470. it allows channel A directly

*varley loop *secondary instruments
input channel B input or
462. most RF meters 477. determine the minimum
both displayed.
resolution *vertical display A and B time/division sensitivity
*0.1Hz to 10Hz
471. electrically a power for an oscilloscope that
463. cathode consist of
is to be used to electrostatic meter is
sudden heavy loads happen *it can detect ac voltages
investigate a 50..
for small duration, 491. it is formed by
wavefor. Assume that the
a_______ motor is the best depositing a coating of
time base magnifier
choice phosphor material the side
express horizontal display *commulatively compounded
of the tube face.
by a factor of 5. 485. what damping method *screen of CRT
*25ns/div
is used in induction 492.MOst RF meters can use
478. for a dynamometer to
type... which antennas?
be able to measure high __________________21:27 A.Logarithmic-Periodic

current____ should be used 486. what is the primary Antenna

*current transformer B. Ultra Broadband
reason why carbon brushes
479. A2 is sometimes Isotropic
are preferred over copper C.Telescopic antenna
referred to as *A, B and C
*focus ring brushes in dc motors?
*they produce less arcing 493. Induction type
480. the measurement
487. the chemical energy instruments are mostly
accuracy of the time base
in a battery of cell used as
is typically stated as *changes to kinetic energy *watt-hour meter
*+-5%
when the cell is 494. in a test by Murray
481. kelvin electrostatic
488. Utility meter's loop for ground fault on
voltmeter ses what method
readout indicates 500... cable having a
of damping *energy
*fluid friction resistance of 1ohms per
489. the schmitt is
482. used to adjust the 1000meters faulty cable is
designed to have upper and
brightness of the display looped with a sound cable
*intensity control lower trigger points
_______________21:24 of ....out having a
slightly above and below
483. in dc motor power resistance of 2.23ohms per
ground.
loss is contributed *zero crossing detector 1000 meters ratio of the

greatly by 490. one important other two arems of testing

*copper loss
advantage of an network at balance ratio
484. in applications where
of 2.75:1 calculate the position on the screen.
approximately *ground buttons
distance of the fault *-2000V to -2050V
*433.3 meters 505. motor whose speed
499. the random variations
495. to use an analog increase as the load
in the output current of
oscilloscope you need to increase
an electron tube that has *differentially compounded
adjust that basic settings
an oxide coated cathode 506. a device ised to
to accomodate an incoming
caused by changes in mechanically measure the
signal?
A. The attenuation or cathode emission. output power of a motor
*flicker effect *dynamometer
amplification of the
500. A2 potential is 507. bridge circuit that
signal
B. the time base adjsutable around is used to determine the
C. the trigerring of the *2kV
unknown capacitance and
oscilloscope 501. it determines the
D. the focus and intensity their losses
number of horizontal *__________________21:55
controls
*B and C only divisions occupied each 508. dyanmometer with

____________________21:41 cycle of displayed uniform scale

*wattmeter
496. which of the ammeter waveform.
*horizontal time/div 509. a triode consist of
below that has no *any of
502. alkaline cells
insertion error *generally better in these(cathode,anode,gate)
*clamp meter
radios than zinc carbon 510. electrical machine
_____________________21:42
503. the scale of a hot that converts ac voltage
497. this bridge circuit
wire instrment is to dc voltage vice versa
is used to determine the *squared *rotary converter

unknown capacitance by 504. it disconnects the 511. main advantage of

comparing it with know input signal and grounds FETVM over a conventional

standard capacitance the input terminal. this voltmeter is the fact the
*De Souty's bridge
allows each trace to be FETVM
498. the grid potential is *draw less current from
set to a conventional zero
adjustable from the circuit under test
 523. in choosing a motor
512. the momentary assembly when a voltage is
for particular
illumincation produce when applied between the
application. what
an electric field is assemblies.
*Kelvin voltmeter characteristic you should
applied to a phosphor..
518. an electronic consider
excited by ultraviolet *speed torque
instrument used for
radiation 524. a cable fault wherein
*Gudden-Pohl effect characterize and locate
the insulation gets
513. lithium battery faults in metalic cables
*microcomputer memory back damaged and current starts
such as twisted wire pairs
up flowing form core to earth
and coaxial cables
514. to increase the *time domain reflectometer or to cable.
*____________________22:20
measuring capability of a 519. bridge measuring self
525. lead acid battery
moving iron ammeter inductance *portable video
*different number of turns *maxwell wein bridge
camera/recorder
of operating coil 520. technically RF field
526. it is designed solely
515. when an armature strength meter detects the
for tracing device
opens in dc motor electrons of radio and
*intermittent sparking characteristics
microwaves at what
516. measures the commercially available
frequencies? *_____________-22:23
intensity of the radiation *0.5MHz to 3GHz
527. variable speed motor
received from any portion 521. synchronous type of *series

of the sky ac motor 528. type of signal

*_____________________22.0 *uses a dc generator to
generator optimized for
8 supply dc excitation
use in__ applications
517. an electrostatic 522. it determines the *tone generator
____________________
voltmeter in which an sensitivity of the display 529. the measurement

assembly of 8-shaped metal to input voltage for each accuracy of the time base

plates rotates between the channel becomes____ when the time

*_______________22:17
plates on stationary base magnifier is set to
 *dc shunt inductance under test is
its maximum position
*+/-7% 536. motor produces the large
*hay bridge
530. maxwells bridge is highest increase in torque
543. dual trace CRT, a
very suitable for accurate considering the same
single electron gun in
measurement increase in current
*inductance *dc series involed the beam is split
_____________________22:29
537. typical frequency into two seperate beams
531. ability of
counter before it passes
ultraviolet radiation to *accurate to six digits or
deflection plates
discharge a negative more *split beam CRT
____________________
charge body in a vacuum 544. using a noise
*hall effect 538. phoshor used on the
generator, we connect the
532.most sensitive screens are
*PMMC *insulator generator.. your preamp

533. Dip meter are used 539. motor whose speed can and slowly advance the

to measure resonance be easily controlled level control unit sound

*dc motors
frequencies parallel LC level it is about
540. a 60 Hz power line *65dB
circuit and usually uses
frequency meter using a 545. the construction of
what oscillator?
*colpitts oscillator vibrating type may the dual trace line CRT

534. it defines the indicate a frequency from with two complemenratary

*58Hz to 62Hz
highest and lowest electron guns contained in
541. its purpose is to
waveform frequency of a single tube
move each waveform *__________________2252
oscilloscope that may be
vertically up and down the 546. which winding in a
displayed with no more
screen to set it in the dc compound generator that
than of attenuation
*frequency response beast position for viewing is made of fine wires
*_____________________2246 *shunt field winding
535. in motors of the same
542. best bridge to be 547. white noise has a
rating which has the least
used if the phase of the frequency characteristic
start torque
which.. power level by___ in a freely suspended molecular dipoles.
*debye effect
with each increasing ferromagnet object when
560. when motor is
octave. magnetization of the
*3dB overloaded
object is reversed *overheat
548. when can we get a *Einstein de Haas effect
561. are sophisticated
maximum mechanical power 553. the sound you hear
signal generator which
form a motor when a TV is tuned to a
*_____________________2300 allow the... to generate
non existing station
549. almost contant speed *_________________2309 arbitrary waveforms,

best motor to be used 554. transistor battery within published limits

*dc shunt *electronic calculator
frequency range, accuracy
550. a pulse wave is ac 555. A3 and A1 focusing
and output level
coupled to an oscilloscope electrodes are held as *arbitrary waveform
*ground potential
with mega ohms and a generators
556. use to focus the
coupling capacitor of 0.1 562. the current form a
control to a fine line
microF. determine the *focus control solar panel is increased
*connecting solar cells in
longest pulse width that 557. input impedance of
parallel
can be displayed without the oscilloscope at the
563. to prevent damage of
noticeable low frequency front part
*1 Mega ohm in parallel the multirange ammeter
distortion introduced by
with 30pF during selection ___
the oscilloscope
*100msec 558. the secondary should be used
*ayrton shunt
551. two inputs are electron are collected by
564. factors that affect
alternately and repeated a graphic
*aquadag iron losses in a dc motor
ly traced on screen but *flux and field are
559. refers to the
uses a much higher correct
selective absorption of
switching frequency 565. direct short circuit
*chop mode electromagnetic by a
battery
552. the rotation induced dialectric due to *an explosion
566. in a moving coil deflection an oscilloscope with an

ammeter, a____ is 571. a multitone generator input capacitance 15pF.

connected... with the outputs several tone Determine the shortest

coild to compensate for simultaneous and are used pulse width that can be

temperature variable to check for displayed without

*swamping resistor *________________2340
noticeable distortion
567. phenomenon whereby 572. most common method
being introduce the
current in a gas changes used in varying the
combination of Rs and Ci
as result of irradiation voltage of dc motor *1.09 microsec
*varying the field
by light called 577. until it dies
*__________________2334 strength *flat discharge curve

568. a cable fault wherein 573. an instrument which 578. device which depends

the insulation gets depends on current in one on the action of the

damaged. the currents or more coils acting on movable permanent magnet

starts flowing form core one or more pieces of soft aligning itself in the

to eart or iron... resultant field produce

*______________2336 *moving iron instrument
either by a fixed
569. an indicating 574. intrument used for
permanent magnety and an
instrument whose movable measuring high frequency
adjacent coils or coils
coils rotates between two currents
*thermocouple carrying current of two or
stationary coils. usually
575. for a waver form with more current carrying
used as wattmeter
*electrodynamometer a peak to peak amplitude coils whose axes are

570. the change in the of 5.. division this gives displaced by a fixed

direction of a compass a reading accuracy of angle?

*+/1% *moving magnet instrument
needle where current
576. a pulse waverform 579. the electrons are
carring wire is brought
with 3.3Kohms source accelerated again after
near
* electromagnetic resistance be displayed on they pass by deflecting
plates following will not cause a *pink noise generator
*Electron acceleration
___________2354 major error in ohmmeter 591. electrical machine

580. what test commonly reading? that changes ac voltage at

*A small change in the
used to locate the ground frequency to another ac
resistance to be measures
fault of single cable voltage at another
*blavier's test 586. the result of the
frequency
581. one cause why the potential difference *frequency converter

shaft torque is less than between anodes 592.

*_________________2403
the.... armature torque of

a dc motor 587. in a compound

*friction loss
generator , which field
582. forces that are
winding usually lower
acting on the pointer of
resistance?
an instrument as they rest *series field winding

on there fineal deflected 588. a 2kHz 0.5V square

position (note damping wave output may be taken

torque is 0.) from the terminal for use

*controlling and
in calibrating attenuator
deflecting torques
probes.
583. grid is composed of *______________2406
*______2400
589. controlling torque in
584. the waveform under
PMMC
investigation are *spring action

displayed on the screen 590. it is essentially

which protected with a flat frequency response

calibrated flat piece noise source will quickly

plastic called show anty anomolies in a

*graticule
speaker systems, acoustics
585. which of the
and crossover networks.