Fick's Law describes the diffusion of dopant elements in semiconductors using a continuum theory called Fick's diffusion equation. This equation, also known as Fick's second law of diffusion, calculates the electrical characteristics of semiconductor devices by relating the rate of diffusion to the concentration gradient of impurities, temperature, properties of the impurity, geometry of the semiconductor, and diffusion constant and time. The diffusion equation is accurate for low impurity concentrations but deviations occur at high concentrations due to its atomistic nature.
Fick's Law describes the diffusion of dopant elements in semiconductors using a continuum theory called Fick's diffusion equation. This equation, also known as Fick's second law of diffusion, calculates the electrical characteristics of semiconductor devices by relating the rate of diffusion to the concentration gradient of impurities, temperature, properties of the impurity, geometry of the semiconductor, and diffusion constant and time. The diffusion equation is accurate for low impurity concentrations but deviations occur at high concentrations due to its atomistic nature.
Fick's Law describes the diffusion of dopant elements in semiconductors using a continuum theory called Fick's diffusion equation. This equation, also known as Fick's second law of diffusion, calculates the electrical characteristics of semiconductor devices by relating the rate of diffusion to the concentration gradient of impurities, temperature, properties of the impurity, geometry of the semiconductor, and diffusion constant and time. The diffusion equation is accurate for low impurity concentrations but deviations occur at high concentrations due to its atomistic nature.
A.P,ECE • To predict diffusion results • Goal is to calculate electrical characteristics of semiconductor device • Two approaches of diffusion theories • Continuum Theory of Fick’s diffusion equation • Atomistic theory • Diffusivity of dopant elements determined from experimental measurements • When impurity concentrations are low, diffusion profiles agree with Fick’s diffusion equation • When impurity concentrations are high, diffusion profiles deviate from diffusion theory Diffusion rate • Mechanism of diffusion • Temperature • Properties of impurity • Concentration gradient of impurities • Geometry of semiconductor F is rate of transfer of solute atoms per unit area N is concentration of solute atoms X is axis of direction of solute flow D is diffusion constant t is diffusion time Above equation is Fick’s second law of diffusion Fick’s equation applied to diffusion Complementary Error function distribution Constant source diffusion profiles Gaussian distribution and limited source diffusion Erfc and Gaussian profiles Thank You