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Kosala Jayasundara
Department of Electronic & Telecommunication Engineering
I D I S (e VD / nVT
1)
ID = diode current
VD = diode voltage
IS = reverse leakage current of the diode
n = emission constant or ideality factor (1 or 2)
VT = kT/q = 26mV at room temperature
K = Boltzmann constant
trr = ta + tb
IRR = ta x dI/dt
Vs t / RC
i t e vc t Vs 1 e t /
R where RC time constant
i t
Vs
R
1 e
RL t
vL t Vs e
RL t
L
where time constant
R
Department of Electronics & Telecommunication Engineering
Diode Circuits with LC Load
C
i t Vs
sin 0t
L vC t Vs 1 cos 0t
where 0
1
resonant frequency vL t Vs cos 0t
LC
Department of Electronics & Telecommunication Engineering
Diode Circuits with RLC Load
Vs 1
I s where
R
is the damping factor
L s2 R s 1 2L
L LC 1
R 1 0 is the resonant frequency
here s 2 s 0 LC
L LC 2
is the characteristic equation in s domain 1 R
and r
2 LC 2 L
R R 1
s 02 2 ringing frequency
2L 2 L LC
s 2 2 Also 0 r2 2
0
Department of Electronics & Telecommunication Engineering
Diode Circuits with DC Sources
RLC Load Case 1 : 0 roots are complex underdampe d
s1 j r and s 2 j r
Vs
i t e t sin r t
r L
Mode I : Mode II :
i
Vs
R
1 e
RL t
Vs RL t
i e
R
Department of Electronics & Telecommunication Engineering
Free Wheeling and L circuits
di
Vs L
dt
Vs Energy stored in the inductance
i t 2
L 1 Vs 1 Vs2
t1 L t1 J
if S is opened at t1 2 L 2 L
Vs
I L t1
L
Department of Electronics & Telecommunication Engineering
Single-Phase Half-Wave Rectifier – R load
Vm
Vo ,ave
Vm
Vo ,rms
2 2
Department of Electronics & Telecommunication Engineering
Quality factors
Pdc
Efficiency (Rectification
Ratio) Pac
Form Vrms
Factor – shape of the FF
Vdc
voltage output
Vac
Ripple Factor RF
Vdc
p dc
TUF
Transformer utilization factor VsIs
Harmonic Factor I I 2 2
1/ 2
I2
1/ 2
HF 2
s s1
1
s
2
I s1 fundamental _ current I s1 I
s1
Vs I s1 I
Power PF cos( ) s1 cos( )
Factor Vs I s Is
I s ( peak )
CF
Crest Factor Is
2Vm
Vo ,ave
V
Vo ,rms m
2
2Vm
Vo ,ave
V
Vo ,rms m
2
VX 6 fLc I dc