You are on page 1of 5

VLSI Design

(MEL G621)

Lecture 2: MOS
Devices
cture 1 : Introduction

EEE & ECE Department


BITS-Pilani, Hyderabad campus

November 23, 2021 VLSI Design 1


Scopes & Objectives

Basic Electrical properties of


MOS devices

November 23, 2021 VLSI Design 2


MOS Capacitor
• Origin of MOS capacitance:
A ?
C  
t ?
MOS ox

ox

• C-V characteristic of MOS

• Separating regions based on C-V characteristic

November 23, 2021 VLSI Design 3


MOS Transistor

• Four terminal device

• Classification based on the way channel is


created
• Enhancement MOS

• Depletion MOS

November 23, 2021 VLSI Design 4


Enhancement MOS Structure

• pMOS and nMOS

• Significances of four terminals

• Gate control

• Operation of nMOS

• How V controls the operation of nMOS


t

November 23, 2021 VLSI Design 5

You might also like