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PV Cells
C. S. Solanki
Energy Systems Engineering, IIT Bombay
E for Energy
PV as source of energy
• PV solar electricity is decentralized in nature, useful for
overall development
•Solar PV is modular, size can be added any time
• In many countries grid parity will be achieved soon
• It is feasible to fulfill all our energy requirement using solar
PV
• One can use solar PV in stand alone and centralized
generation manner
E for Energy
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Worldwide P V modules production
E• India’s
for Energy
PV module production in 2010-11 was about 1000 MW
Generations of Solar PV
Past, present and future
E for Energy
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Photovoltaics generations
1st Generation 2nd Generation 3rd Generation
?
-Abundant
-Abundant, material
non-toxic - Low - Low
material, material
material cost
-Reasonable cost,
- Low eff. - High eff.
eff., high cost
Gen-1 + Gen-2
• Si based • a-Si/CdTe/CIGS
• Low material cost • Target much
• Mature technology
lower cost by high
• High material cost • stability, resources efficiency
E for Energy availability, toxicity
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Photovoltaic generations: 1st, 2nd & 3rd
US$0.10/W US$0.20/W US$0.50/W
100
80
60
Efficiency, %
US$1.0/W
III
40
20 I US$3.50/W
II
Rs / m2
Price of Module (Rs/Wp) =
Wp / m2
Production Cost
Price of Module (Rs/Wp) =
Efficiency
Efor Energy
All these technologies are commercially available 8
13/12/2011 © IIT Bombay, C.S. Solanki
Thin film solar cell technologies
E for Energy
Challenges to PV technology
• Moderate efficiencies
• Availability of material
E for Energy
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Which materials can be
used for solar cells?
Metal, semiconductor or insulators?
E for Energy
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What solar cell should do?
• Solar cell should generate voltage or potential
(which can drive current through a load)
V
+ -
E for Energy
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•Principle of solar thermal energy conversion
(light to heat conversion)
Energy
Continuous band
gap
Space
•Principle of solar PV energy conversion
(light to photo-voltage conversion)
Separation of opposite
charges results in
potential difference
E for Energy
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Compound semiconductors
• Elemental semiconductors: Si, Ge
• Compound semiconductors: GaAs, InP
• Ternary semiconductors: AlGaAs, HgCdTe
• Quaternary semiconductors: InGaAsP, InGaAlP
• Ease of fabrication
• Temperature of fabrication
• High throughput
E for Energy
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Material Structure
Amorphous Passivated amorphous
Micro-crystalline
Multi-crystalline Mono-crystalline
Thin films are deposited on
substrate – material is
amorphous, micro-crystalline and
at best multi-crystalline
Mono- and micro-crystalline Si is
E for Energy grown
17
13/12/2011 © IIT Bombay, C.S. Solanki
Material Structure
E for Energy
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Band Gap of Semiconductors
E for Energy
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Single Atom-1
• Energy of an electron in an
atom is quantized.
Electron
energy
•2N+2N •∫∫ p
•filled states Eg
•∫∫ s
•∫∫
Inter atomic distance
E for Energy
Si lattice spacing Isolated
atoms
13/12/2011 © IIT Bombay, C.S. Solanki
Energy band model
Energy
Conduction
band
Ec
Ec
Eg Eg
Ev Ev
Valence
band
Distance
E for Energy
13/12/2011 © IIT Bombay, C.S. Solanki
Energy-momentum diagram
E for Energy
13/12/2011 © IIT Bombay, C.S. Solanki
Band gaps of materials
a-S-Hi
GaAs
CdTe
c-Si CIGS
1.7 eV
1.42 1.45
1.12 1.1 eV eV eV
eV
E hv
1.24
E eV
www.wikipedia.org ( m)
• Energy, frequency and wavelength are related (E-Energy, -
E for Energy
frequency, and -wavelength)
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Interaction of radiation with matter
Rs / m2
Price of Module (Rs/Wp) =
Wp / m2
Energy
Price of modules Production cost cost
E for Energy
Energy yield efficiency
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Material Properties
Manufacturing Performance