P-n junction

MR. Prashant Lamsal

1
 © 2013 Copyright by David Owino

P-n junction
 When an intrinsic s.c simultaneously doped by
trivalent and pentavalent atoms such that one half
becomes n-type and the other p-type s.c a region
is formed
 The boundary or interface separating a p and n
type material is called p-n junction

N- P-type
type
Junction
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Cont…

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Formation of p-n junction

 The free ēs and holes near the junction diffuses
across it
 ēs enter the p-zone as holes move into the n-zone
as shown
p-type Depletion layer n-type

+ + + - -
- - - - - +
+ -+ + +
-
+

+ +- -
- + -
+
-+ + +
- - +
-
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Cont…
 Re-combination of mobile charge carriers
takes place on either side of the junction
 This depletes mobile charge carriers within
the region
 The region remain with uncovered fixed ions
on either side of the junction
 This region occupied by the uncovered fixed
ions is called depletion layer

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 © 2013 Copyright by David Owino

Cont…
 The uncovered ions set up a potential
difference/barrier.
 The barrier in turn sets up a field that stops
further diffusion of mobile charges.
 The depletion layer has very high resistance
to the movement of charge carriers.

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 © 2013 Copyright by David Owino

CONT…

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CONT…

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Biasing the p-n junction

 Biasing means connecting /applying p.d
across the p-n junction
 Biasing can either increase or reduce the
potential barrier
 There are two ways of biasing a p-n junction
to e.m.f of the source, namely:
Forward bias
Reverse bias

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 © 2013 Copyright by David Owino

Forward bias
 P-type is connected to +ve & N-type to the –ve
terminal of an external cell/battery.
VB
holes
P-type N-
ēs type

VE
VB-barrier potential
VE-applied potential

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A Forward Biased p-n junction

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