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Lecture(8)
Prof. Mohammed Zeki Khedher
Department of Electrical Engineering
University of Jordan
1
Thyristors
2
Is inherently a slow switching device
compared to BJT or MOSFET.
Used as a latching switch that can be
turned on by the control terminal but
cannot be turned off by the gate.
3
SCR
Symbol of
Silicon Controlled Rectifier
4
Structure
G a te C a tho d e
n
+
10
19
cm
-3
n
+
10
19
cm
-3
1 0 m
J3 - 17 -3
p 10 cm 3 0 -1 00 m
J2
–
n 10
13
-5 x 1 0
14
cm
-3 5 0 -1 00 0 m
J1
p
+
10
17
cm
-3
3 0 -5 0 m
19 -3
p 10 cm
A no d e
5
Device Operation
Simplified model of a
thyristor
6
Two Transistor Model of SCR
7
8
The general transistor equations are,
I C I B 1 I CBO
I C I E I CBO
I E IC I B
I B I E 1 I CBO
9
Considering PNP transistor
of the equivalent circuit,
I E 1 I A , I C I C1 , 1 ,
I CBO I CBO1 , I B I B1
I B1 I A 1 1 I CBO1 1
10
Considering NPN transistor
of the equivalent circuit,
I C I C2 , I B I B2 , I E2 I K I A I G
I C2 2 I k I CBO2
I C2 2 I A I G I CBO2 2
11
From the equivalent circuit,
we see that
I C2 I B1
2 I g I CBO1 I CBO 2
IA
1 1 2
12
Case 1: When I g 0
I CBO1 I CBO2
IA
1 1 2
Case 2: When I G 0
2 I g I CBO1 I CBO 2
IA
1 1 2
13
V-I
Characteristics
14
Effects of gate current
15
Turn-on
Characteristics
ton td tr
16
VAK
tC
tq
IA
di
C om m u ta tio n
A n od e cu rr e n t dt
b e gin s to
d e cr e a se R e co ve r y R e com bin a tio n
t1 t2 t3 t4 t5
t q = d e vice o ff tim e
Turn-off
t
Characteristic
tr r tg r
t c = circu it o ff tim e
tq
s
tc
17
dq2 d
ij 2
dt
dt
C j Vj
2 2
C j2 dV j dC j2
2
V j2
dt dt
dv/dt
Triggering
18
dq2 d
ij 2
dt
dt
C j Vj
2 2
C j2 dV j2 dC j2
V j2
dt dt
19
Switching Characteristics (linearized)
Thermal Turn-on.
Light.
High Voltage.
Gate Current.
dv/dt.
21
Thyristor Ratings
First Second Third
Subscript Subscript Subscript
D off state W working M Peak
Value
T ON state R Repetitive
F Forward S Surge or
non-repetitive
R Reverse
22
Voltage Ratings
ITaverage ITRMS IL
di
IH
dt
24
Gate Specification
I gt Vgt
VgD QRR
Rthjc
25
Diodes
Diode Product Range
Phase Control Thyristors
Fast switching Thyristors
Thyristor Types
Phase-control Thyristors (SCR’s).
Fast-switching Thyristors (SCR’s).
Gate-turn-off Thyristors (GTOs).
Bidirectional triode Thyristors (TRIACs).
Reverse-conducting Thyristors (RCTs).
29
Static induction Thyristors (SITHs).
Light-activated silicon-controlled rectifiers
(LASCRs).
FET controlled Thyristors (FET-CTHs).
MOS controlled Thyristors (MCTs).
30
PHASE-CONTROL THYRISTORS : primarily for rectifying line
frequency voltage and currents (phase controlled AC and DC
motor drivers and high voltage power transmission). Average
current 4000A, blocking voltage 5-7kV and on-state voltage
1.5-3V
34
DEVICE SYMBOLS &
CHARACTERISTICS
35
Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
36
37
Phase Control Thyristor
These are converter thyristors.
The turn-off time tq is in the order of 50 to
100sec.
Used for low switching frequency.
Commutation is natural commutation
On state voltage drop is 1.15V for a 600V
device.
38
They use amplifying gate thyristor.
39
Fast Switching Thyristors
Also called inverter thyristors.
Used for high speed switching applications.
Turn-off time tq in the range of 5 to 50sec.
On-state voltage drop of typically 1.7V for
2200A, 1800V thyristor.
High dv/dt and high di/dt rating.
40
Bidirectional Triode
Thyristors (TRIAC)
41
Triac Characteristics
42
Gate Turn-off Thyristors
Turned on by applying positive gate signal.
Turned off by applying negative gate signal.
On state voltage is 3.4V for 550A, 1200V GTO.
Controllable peak on-state current ITGQ is the
peak value of on-state current which can be
turned-off by gate control.
43
Gate-Turn-Off Thyristors (GTO)
46
Advantages over BJTs
47
Disadvantages of GTOs
48
Reverse Conducting
Thyristors
49
Anti-parallel diode connected across SCR
on the same silicon chip.
This diode clamps the reverse blocking
voltage to 1 or 2V.
RCT also called Asymmetrical Thyristor
(ASCR).
Limited applications.
50
Static Induction Thyristors
Turned-on by applying positive gate voltage.
Turned-off by applying negative gate voltage.
Minority carrier device.
Low on-state resistance & low voltage drop.
Fast switching speeds & high dv/dt & high
di/dt capabilities.
51
Switching time in order of 1 to 6 sec.
The rating can go upto 2500V / 500A.
Process sensitive.
52
Light-Activated Silicon
Controlled Rectifiers
Turned-on by direct light radiation on
silicon wafer.
Gate structure is sensitive for triggering
from practical light sources.
Used in high voltage and high current
applications. Example: HVDC transmission,
Static reactive power compensation.
53
Offers complete electrical isolation
between light triggering source & power
circuit.
Rating could be has high as 4KV / 1500A.
di/dt rating is 250A / sec.
dv/dt rating is 2000V / sec.
54
Photo-SCR coupled isolator
Bipolar Junction Transistors (BJT)
58
Turned on like conventional thyristors.
Cannot be turned off by gate control.
Application of these are where optical
firing is to be used.
59
MOS-Controlled
Thyristor
New device that has become commercially
available.
Basically a thyristor with two MOSFETs
built in the gate structure.
One MOSFET for turning ON the MCT and
the other to turn OFF the MCT.
60
MCT
Features
Low on-state losses & large current
capabilities.
Low switching losses.
High switching speeds achieved due to
fast turn-on & turn-off.
Low reverse blocking capability.
64
Gate controlled possible if current is less
than peak controllable current.
Gate pulse width not critical for smaller
device currents.
Gate pulse width critical for turn-off for
larger currents.
65
MOSFET
66
Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
MOSFETs
77
Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
Advantages of IGBT
Combines the advantages of BJT & MOSFET
High input impedance like MOSFET
Voltage controlled device like MOSFET
Simple gate drive, Lower switching loss
Low on state conduction power loss like BJT
Higher current capability & higher switching
speed than a BJT. ( Switching speed lower than
MOSFET)
78
Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
Applications of IGBT
ac and dc motor controls.
General purpose inverters.
Uninterrupted Power Supply (UPS).
Welding Equipments.
Numerical control, Cutting tools.
Robotics & Induction heating.
79
Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
MCT
Comparison of Controllable Switches
Summary of Device Capabilities