Semiconductor lasers are classified into

Homojunction laser
and
Heterojunction laser

Homojunction laser: P–N junction is formed by a single crystalline

material
Example: Gallium Arsenide (GaAs).

Heterojunction laser: P-N junction has one material on one side

and a different material on the other side
Example: Heterojunction laser is formed between GaAs and Ga-Al-
As.
Type : Homojunction semiconductor laser

Active medium : p−n junction (with various layers)

Active centre : Recombination of electrons and holes

Pumping method : Direct conversion method

Optical resonator : Polished p−n junction

Power output : 1 mW

Nature of output : Pulsed or Continuous wave

Output

Wavelength : 8400 Å to 8600 Å

Principle
The electron in conduction band combines with hole in the valence band and produces energy in
the form of a light. This photon induces another electron from conduction band to move to the
valence band and stimulate the emission of coherent photons.
 First basic PN junction laser is called Homojunction semiconductor Laser

Same semiconductor material is used on both the sides

 a c

Energy band diagram of PN junction at thermal Since we are at thermal equilibrium , we get the same
equilibrium fermi level in the N side but it is above conduction band
edge
b
d

Fermi level is below the valence band edge in

the P- side In both P and N region, area below fermi level is filled
with electrons
 e f

If a forward bias VF is applied, the fermi level

Electrons are injected from N region into
of P will move down and fermi level of N will depletion region.
move up and the depletion region d will be Holes are injected from P region into the
narrower depletion region, recombination occurs and
g current flows in the diode

High injection of electron and hole

occur in the depletion region
 Region d now has high electron Region d has high hole concentration in
concentration N(EC) in the conduction band valence band and
low electron concentration N(EV)

N(EC) > N(EV) Population inversion is satisfied

Photons are emitted by recombination in the depletion
region called active region
Advantages
Low cost.
It is easy to manufacture the diode.
High efficiency, powerful and coherent than LED.
Simple arrangement and compact.
Less power requirement for operation.
Output can be easily modulated by controlling the junction
current.

Disadvantages
Large threshold current density.
Pulsed mode output only.
Larger beam has large divergence.
Poor coherence and stability.
Poor electromagnetic field confinement.
Low power output.
Applications

Fibre optic communication.

in laser diodes (Laser diodes are more powerful and
coherent than LED).
Laser printers.
Recording and reading data in CDs and DVDs.
Bar code reading.
as a pain killer.
to heal wounds due to infra-red radiation.
Type Homojunction Heterojunction
semiconductor laser semiconductor laser

Active medium p−n junction (with various p−n junction (with various
layers) layers)
Active centre Recombination of electrons Recombination of electrons
and holes and holes
Pumping method Direct conversion method Direct conversion method
Optical resonator Polished p−n junction Polished p−n junction
Power output 1 mW 10 mW

Nature of output Pulsed or Continuous wave Continuous wave

Output Wavelength 8400 Å - 8600 Å 8014 Å

Band gap
Ec Conduction band
–

Free

Ec

Ev Band gap (Eg)

+ + + + + + + + Laser light
+ + + + + + + +
holes
+
Ev
Advantages
Very narrow beam with high coherence and
monochromaticity is achieved.
Continuous wave operation is possible.
Carrier and optical confinement can be achieved
simultaneously.
High output power can be achieved even with low
operating current.
Threshold current density is very low at room
temperature.
These are highly stable with longer life.
Disadvantages
Cost is higher than homojunction laser.
Growing different layers of p–n junction is difficult.

Applications
It is used as optical source in fibre optic communication.
It is used in CD reading or Writing data and in laser
printers.
It is used in holography.
1. What is the ratio of the stimulated emission to spontaneous emission at
temperature of 280°C for the sodium D line? (λ = 590nm)

=
2.
3. For a semiconductor laser, the band gap is 0.8 eV. What is the wavelength of light
emitted from it.
4. Prove that the laser action is not possible in optical frequencies under thermal
equilibrium (OR) Show that the stimulated emission is not possible for (i) Sodium D line at
3000 C and (ii) At Optical frequencies under thermal equilibrium
5. Calculate the long wavelength limit of a extrinsic semiconductor if the
ionization energy is 0.02 eV.
6. Calculate the number of photons from green light of mercury ( λ = 4916A0) requires to
do one joule of work.
7. Calculate the wavelength of radiation emitted by an LED made up of a semiconducting
material with band gap energy 2.8 eV