A UNIFIED MODEL

FOR MANUAL ANALYSIS

S D

B
THE TRANSISTOR AS A SWITCH
Ron is time varying, nonlinear and dependent on VGS  V T
the operating point of the transistor
- Constant and linear resistance Req Ron
- Average value of the resistance over the S D
operating region of interest

NMOS discharging a capacitor from ID

V GS = VD D
VDD to VDD/2

Rmid

R0

V DS
VDD/2 VDD
 Req - Average value of the resistances at the end points of
ID
V GS = VD D

the transition region Rmid

R0

V DS
VDD/2 VDD

Resistance is inversely proportional to W/L ratio

CAPACITANCE
 Dynamic response of a MOSFET is function of
the time it takes to (dis)charge the parasitic
capacitances that are intrinsic to the device and
the extra capacitance introduced by the
interconnecting lines and load
 MOS structure
 Channel charge
 Depletion regions of the reverse biased pn junctions of
source and drain
GATE CAPACITANCE - MOS STRUCTURE CAPACITANCE
Polysilicon gate

Source Drain
W
n+ xd xd n+

Gate-bulk
L d overlap
Top view
CGSO, CGDO = Cox xdW
Gate oxide
tox

n+ L n+

Cross section
GATE CAPACITANCE – CHANNEL CHARGE
G G G

CGC CGC CGC

S D S D S D

Cut-off Resistive Saturation

Most important regions in digital design: saturation and cut-off

For speed considerations, assume worst-case scenario = W*L*Cox
6
GATE CAPACITANCE

Capacitance as a function of VGS Capacitance as a function of the

(with VDS = 0) degree of saturation
 jkamalaa@annauniv.edu

DIFFUSION CAPACITANCE
Channel-stop implant
NA+

Side wall
Source
W
ND

Bottom

xj Side wall
Channel
LS Substrate N A
DYNAMIC BEHAVIOR OF MOS TRANSISTOR
G

CGS CGD

S D

CSB CGB CDB

CGS = CGCS + CGSO ;

CGD = CGCD + CGDO
CGB = CGCB
C =C ; C =C
CAPACITANCES IN 0.25 MM CMOS PROCESS
 SUB-THRESHOLD CONDUCTION
qVGS
 qV
 DS 
I D  I 0e nkT 1  e kT 
 
-2
 
10

Linear The Slope Factor

-4
10 qVGS
CD
I D ~ I 0e nkT
, n  1
10
-6 Cox
Quadratic
ID (A)

S is DVGS for ID2/ID1 =10

-8
10

-10 Exponential
10

-12 VT
10 Typical values for S:
0 0.5 1 1.5 2 2.5
VGS (V) 60 .. 100 mV/decade
THRESHOLD VARIATIONS

VT VT

Long-channel threshold Low VDS threshold

VDS
L

Threshold as a function of Drain-induced barrier lowering

the length (for low VDS ) (for low L)
LATCH-UP
SCALING

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