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    sparsh kaudinya
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    This document contains notes from the Pine Training Academy for student SPARSH in batch ASIC 13. It discusses several topics related to transistors, including velocity saturation, hot carrier effect, subthreshold condition, drain induced barrier lowering, channel length modulation, and CMOS inverters. More details are provided about hot carrier effect, noting that it occurs due to high electric fields and drift velocity trapping electrons in oxide layers, and that this phenomenon is used in flash memory and EPROM.

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    This document contains notes from the Pine Training Academy for student SPARSH in batch ASIC 13. It discusses several topics related to transistors, including velocity saturation, hot carrier effect, subthreshold condition, drain induced barrier lowering, channel length modulation, and CMOS inverters. More details are provided about hot carrier effect, noting that it occurs due to high electric fields and drift velocity trapping electrons in oxide layers, and that this phenomenon is used in flash memory and EPROM.

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    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
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    6 views8 pages

    Assignment2 Vivek Sir

    Uploaded by

    sparsh kaudinya
    This document contains notes from the Pine Training Academy for student SPARSH in batch ASIC 13. It discusses several topics related to transistors, including velocity saturation, hot carrier effect, subthreshold condition, drain induced barrier lowering, channel length modulation, and CMOS inverters. More details are provided about hot carrier effect, noting that it occurs due to high electric fields and drift velocity trapping electrons in oxide layers, and that this phenomenon is used in flash memory and EPROM.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Flag for inappropriate content
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    Pine Training Academy

    NAME – SPARSH
    BATCH – ASIC 13
    Topics for Discussion

     Velocity Saturation
     Hot Carrier Effect
     Subthreshold Condition
     Drain Induced Barrier Lowering
     Channel Length Modulation
     Cmos Inverter
    Velocity Saturation
    Hot carrier effect

     Phenomenon happens due to high electric


    field and high drift velocity. Electrons
    flowing from source to the drain in Nmos
    trapped in oxide layers.
     We use this for flash memory and eprom
    too.
    Subthreshold Condition
    Drain Induced Barrier Lowering
    Channel Length Modulation
    Cmos Inverter

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