A POWERPOINT PRESENTATION

ON
“SEMICONDUCTOR
DIODES”
BY: ANKUSH SHARMA
ASSISTANT PROFESSOR
IMI, GREATER NOIDA

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 SEMICONDUCTOR DIODES
P-N JUNCTION DIODE

FORMATION OF DEPLETION REGION

BIASING OF DIODE
•FORWARD BIASING

•REVERSE BIASING

V-I CHARACTERISTICS OF DIODE

DIODE CURRENT EQUATION

STATIC AND DYNAMIC RESISTANCE

STORAGE AND DEPLETION CAPACITANCE

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 SEMICONDUCTOR DIODE
Diode is a two layer, two terminal and one junction device
which works as a Switch.
If both semiconductors are joined with the help of special
fabrication technique the P-N junction diode is formed.
The direction of current is always from Anode to Cathode.

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FORMATION OF DEPLETION REGION
• Due to change in concentration of P & N region
diffusion process start.
• As a result, electrons start moving from N region
and Holes start moving from P region.
• While travelling they collide with each other and
become neutral.
• A region is created at the junction which consists
only immobile ions is called as Depletion Region.

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FORMATION OF DEPLETION
REGION

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 BIASING OF DIODE
Forward Biasing
 P-type layer is connected with +ve plate and N-
type layer is connected with –ve plate of battery.
 Depletion region starts decreasing.
 Current starts increasing.
 Ideally diode offers zero resistance in forward
bias.
 Ideally diode act as a closed switch.

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BIASING OF DIODE

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 BIASING OF DIODE
Reverse Biasing
 P-type layer is connected with -ve plate and N-
type layer is connected with +ve plate of
battery.
 Depletion region starts increasing.
 Current starts decreasing.
 Ideally diode offers infinite resistance in reverse
bias.
 Ideally diode act as an open switch.
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BIASING OF DIODE

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BIASING OF DIODE

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V-I CHARACTERISTICS OF DIODE

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V-I CHARACTERISTICS OF DIODE

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 V-I CHARACTERISTICS OF DIODE
• In forward bias voltage at which current starts rising
is known as Cut in Voltage. For Si=0.7 V, For Ge= 0.3 V
• The maximum current in forward bias that diode can
handle without damage itself is known as Maximum
Forward Current.
• In reverse bias the voltage at which current rising
suddenly & sharply is known as Breakdown Voltage.
• The maximum voltage in reverse bias that diode can
handle without damaging itself, is known as Peak
Inverse Voltage.
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 DIODE CURRENT EQUATION
• The current offered by the diode in forward bias is given by:
IF= Io [ ]
Where IF= Forward current
Io= Reverse Saturation current
n= constant = 1 for Ge and 2 for Si
VT= KT/q= volt equivalent of temperature
K= Boltzmann’s constant = 1.38x 10-23 J/ Kelvin
T= Diode Temperature in Kelvin
q= charge of an electron= 1.6x10-19 C
VT= T/11,600
If T=300 kelvin
Then, VT= 26mV
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 DIODE RESISTANCE
• Ideally diode offers zero resistance in forward bias and infinite
resistance in reverse bias.
Static Resistance:
 Resistance offered by the diode when D.C. source is connected
with it is called as Static Resistance or DC resistance.
 Practically, Forward Static resistance of diode is 10 to 50Ω.
• Dynamic Resistance:
 Resistance offered by the diode when A.C. source is connected
with it is called as Dynamic Resistance or AC resistance.
 Practically, Forward Static resistance of diode is 1 to 25Ω.
rf=n VT/IF

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 DIODE CAPACITACNE
Storage or Diffusion Capacitance:
 If in a forward bias, the forward current is suddenly
reversed, the forward current becomes zero at once
but lot of charge carriers are stored in depletion
region.
 These charge carriers are behave as a charge stored
in capacitor in between plates n and p type.
 This type of capacitance is called as Storage or
Diffusion Capacitance.
 Its value is about 0.02µF.
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 DIODE CAPACITACNE
Depletion or Transition Capacitance:
 N and P type layers of diode act like plates of
capacitor and depletion region between them
acts like dielectric material.
 This type of capacitance offered by the diode is
called as Depletion or Transition Capacitance.

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DIODE CAPACITACNE

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Thank You

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