MOSFET’s

(metal–oxide–semiconductor field-effect
transistor)
Current Controlled vs Voltage Controlled Devices
 FET ( Field Effect Transistor)
Few important advantages of FET over conventional Transistors
1. Unipolar device i. e. operation depends on only one type of
charge carriers (h or e)
2. Voltage controlled Device (gate voltage controls drain
current)
3. Very high input impedance (109-1012 )
4. Low Voltage Low Current Operation is possible (Low-
power consumption)
5. Less Noisy as Compared to BJT
6. Very small in size, occupies very small space in Ics
7. Low voltage low current operation is possible in
MOSFETS
 Types of Field Effect Transistors
(The Classification)

» JFET
n-Channel JFET
FET
p-Channel JFET
MOSFET (IGFET)

Enhancement Depletion
MOSFET MOSFET

n-Channel p-Channel n-Channel p-Channel

EMOSFET EMOSFET DMOSFET DMOSFET
A FET consists of a p-type and n-type silicon bar
containing two PN junctions at the sides. The bar forms the
conducting channel for the charge carriers.
When the bar FET is of n-type, it is called n-channel FET
and when the bar of FET is of p-type, it is called p-channel
FET.
The schematic symbol of a FET is shown in figure. The vertical
line in the symbol can be visualized as the channel to which the
source and drain are connected. The third terminal gate is
connected at the center of the vertical line.
In a n-channel FET, the gate and the channel from a PN junction,
the gate arrow points inwards and in p-channel FET, the gate and
channel from an PN junction, the gate arrow points outward.
In this case, the width of
depletion region will remain
constant. The electrons will
flow from source terminal to
gate terminal.
When a small negative voltage is
applied to the gate terminal i.e.
when the gate to source voltage is
negative, then the width of
depletion region starts increasing.
• When the large negative gate to source voltage is applied,
then this large negative electric field will contribute to
increment of the width of the depletion region
• The negative voltage at gate terminal implies that the P-
terminal is connected to negative terminal of battery while
N terminal is connected to the positive terminal. This forms
the reverse biased PN junction.
This point of voltage is called
pinch-off voltage. Thus, the Pinch-
off voltage can be defined as the
reverse voltage applied at the gate
to source terminal such that the
drain current will cease completely.
At this point of time, no current
will flow from the junction field
effect transistor.
 MOSFETs
MOSFETs have characteristics similar to JFETs and additional characteristics
that make them very useful.

There are 2 types of MOSFET’s:

• Depletion mode MOSFET (D-MOSFET)
• Enhancement Mode MOSFET (E-MOSFET)
D-MOSFET Symbols
E-MOSFET Symbols
 Depletion Mode MOSFET Construction

The Drain (D) and Source (S) leads connect to the to n-doped regions
These N-doped regions are connected via an n-channel
This n-channel is connected to the Gate (G) via a thin insulating layer of SiO 2
The n-doped material lies on a p-doped substrate that may have an additional terminal
connection called SS
Basics Operation
Basics Operation
 Basic Operation
A D-MOSFET may be biased to operate in two modes:
the Depletion mode or the Enhancement mode
 p-Channel Depletion Mode MOSFET

The p-channel Depletion mode MOSFET is similar to the n-channel except that the
voltage polarities and current directions are reversed
Enhancement Mode
MOSFET’s
 Enhancement Mode MOSFET Construction

The Drain (D) and Source (S) connect to the to n-doped regions
These n-doped regions are not connected via an n-channel without an external voltage
The Gate (G) connects to the p-doped substrate via a thin insulating layer of SiO 2
The n-doped material lies on a p-doped substrate that may have an additional terminal
connection called SS
Basics opeartion
 Basic Operation
The Enhancement mode MOSFET only operates in the enhancement mode.

VGS is always positive

IDSS = 0 when VGS < VT
As VGS increases above VT, ID increases
If VGS is kept constant and VDS is increased, then ID saturates (IDSS)
The saturation level, VDSsat is reached.
 p-Channel Enhancement Mode MOSFETs
The p-channel Enhancement mode MOSFET is similar to the n-channel except that the
voltage polarities and current directions are reversed.
 MCQ

A JFET has three terminals, namely …………

(A) cathode, anode, grid

(B) emitter, base, collector
(C) source, gate, drain
(D) none of the above
 MCQ

A MOSFET is a ………… driven device

(A) current
(B) voltage
(C) both current and voltage
(D) none of the above
 MCQ

A MOSFET can be operated with ……………..

(A) negative gate voltage only

(B) positive gate voltage only
(C) positive as well as negative gate voltage
(C) none of the above
 MCQ

The input control parameter of a MOSFET is ……………

(A) gate voltage

(B) source voltage
(c) drain voltage
(D) gate current
 MCQ

The input impedance of a MOSFET is of the order of

………..
(A) 1 Ω
(B) a few hundred Ω
(C) kΩ
(D) several MΩ