NIKO-SEM

N-Channel Logic Level Enhancement Mode Field Effect Transistor

P0903BDG
TO-252 (DPAK) Lead-Free

D
PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 9.5m ID 50A 1. GATE 2. DRAIN 3. SOURCE

G S

ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation
2 1

SYMBOL VGS

LIMITS 20 50 35 200 40 250 8.6 50 30 -55 to 150 275

UNITS V

TC = 25 C TC = 100 C

ID IDM IAR

L = 0.1mH L = 0.05mH TC = 25 C TC = 100 C

EAS EAR PD Tj, Tstg TL

mJ

Operating Junction & Storage Temperature Range Lead Temperature ( /16 from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink
1 2 1

SYMBOL RJC RJA RCS

TYPICAL

MAXIMUM 2.5 62.5

UNITS

C / W

0.6

Pulse width limited by maximum junction temperature. Duty cycle 1

ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TC = 125 C 25 1 1.6 3 250 25 250 nA A V LIMITS UNIT MIN TYP MAX

SEP-24-2004

NIKO-SEM

N-Channel Logic Level Enhancement Mode Field Effect Transistor

P0903BDG
TO-252 (DPAK) Lead-Free
50 11 7.5 32 16 9.5 A m S

On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1

ID(ON) RDS(ON) gfs

VDS = 10V, VGS = 10V VGS = 4.5V, ID = 20A VGS = 10V, ID = 25A VDS = 10V, ID = 25A DYNAMIC

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
2 2

Ciss Coss Crss Qg Qgs Qgd

2

1200 1800 VGS = 0V, VDS = 15V, f = 1MHz 600 350 25 VDS = 10V, VGS = 10V, ID = 25A 15 10 6 VDS = 15V, RL = 1 ID 50A, VGS = 10V, RGEN = 24 120 40 105 16 250 90 200 nS 1000 500 50 nC pF

Gate-Source Charge Gate-Drain Charge Rise Time2

2

Turn-On Delay Time

td(on) tr td(off) tf

Turn-Off Delay Time2 Fall Time2

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current Pulsed Current3 Forward Voltage1 Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge
1 2

IS ISM VSD trr IRM(REC) Qrr IF = IS, dlF/dt = 100A / S IS = 25A, VGS = 0V 0.9 70 200 0.043

50 150 1.3

A V nS A C

Pulse test : Pulse Width 300 sec, Duty Cycle 2. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH P0903BDG, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

SEP-24-2004

NIKO-SEM

N-Channel Logic Level Enhancement Mode Field Effect Transistor

P0903BDG
TO-252 (DPAK) Lead-Free

TYPICAL CHARACTERISTICS

SEP-24-2004

NIKO-SEM

N-Channel Logic Level Enhancement Mode Field Effect Transistor

P0903BDG
TO-252 (DPAK) Lead-Free

SEP-24-2004

NIKO-SEM

N-Channel Logic Level Enhancement Mode Field Effect Transistor

P0903BDG
TO-252 (DPAK) Lead-Free

TO-252 (DPAK) MECHANICAL DATA

mm Dimension Min. A B C D E F G 9.35 2.2 0.45 0.89 0.45 0.03 5.2 Typ. Max. 10.4 2.4 0.6 1.5 0.69 0.23 6.2 H I J K L M N Dimension Min. 0.89 6.35 5.2 0.6 0.5 3.96 4.57 Typ. Max. 2.03 6.80 5.5 1 0.9 5.18 mm

G L

SEP-24-2004