1

NanoFETs

LECTURE 5 The Master Equation Set for 1-D Local density of states NanoFETs on the Roadmap The Short Channel Effect Carbon nanotube FETs Sub-threshold advantage

Sec. 18.3

Self-consistent solution of the 1-D device equations

In what order would these equations be solved for a self-consistent answer? What are the boundary conditions for the potential? What is the local density of states, as appears in the expression for charge?

Sec. 18.2.2

LDOS

How is the normalization achieved to enable the absolute determination of charge?

Example of LDOS in a 1-D carbon nanotube FET

Is there a DIGITAL future for nanoFETs?

Tennenhouse04

Secs. 10.1, 13.1.7, 13.1.9

The short-channel effect

Sub-threshold characteristic

Drain characteristic

What are the variables here?

How is the effect characterized?

Sec. 13.1.7

Equivalent circuit for the short-channel effect

Multi-gate solution for the short-channel effect

Sec. 13.1.9

Above: SOI FET, courtesy Alvin Loke Bottom: Laplace simulation, courtesy Daryl Van Vorst

H. Dai, APS, March, 2006

10

Fabricated Carbon Nanotube FETs

20nm -ve SB

R.V. Seidel et al., Nano Letters, Dec. 2004

50nm MOS
A. Javey et al., Stanford

Small m*: sub-threshold slope improvement

11

Non-thermionic process: S < 60 mV/dec !!

J. Appenzeller et al., IEEE TED, 4, 481, 2005