Supply independent current source

V
cc
Basic concept :
2 o BE
R i
1
1 V |
|

|
+ =
I
ref
R
1
i
o
2 o BE
R i 1 V
1
|
.

\
|
+
If | >>1 V
BE1
~i
o
R
2

1
2
|
|
.
|

\
|
=
S
REF
th 1 BE
I
I
ln V V
1
R
2
+
V
BE1
|
|
.
|

\
|
=
s
REF
2
th
o
I
I
ln
R
V
I
-
|
|
.
|

\
|

~
s 1
BE cc
2
th
o
I R
V 2 V
ln
R
V
I
Notice that this circuit is a temperature detector!
|
|

|

BE cc th
V 2 V
l
V
I
Supply independent current source
V
cc
|
|
.

\
~
s 1
BE cc
2
th
o
I R
ln
R
I
y x
) x ( y
c
}
I
ref
R
1
i
o
y
x
y
y
x
) x ( y
x
c
c
c
=
}
Sensitivity
1
2
x
x
y
y
c
c
=
R
2
+
V
BE1
-
AV
V
BE1
o i
o
x
x
y
y
Y
X
A
(

=
A
}
AV
BE1
I
REF
AI
0
V
th
I
=
}
x y
X (

}
AI
REF
2
R I
o
V
CC
=
}
Bootstrap Biasing Circuit

Q
6
Q
5
Q
4
1
1 BE
2 C
R
V
I =

I
REF
Q
R
2
I
out
I
C2
Q
4
=Q
5
==> I
C2
~I
REF
Q
2
Q
1

I
out
Q
V
BE1
~I
C2
R
1
==>
Logarithmic current source
R
1
Q
3
1 2 C
S
REF
th
R I
I
I
ln V =
I
REF th
2 C
I
I
ln
R
V
I =
I
C2

I
C2
=I
REF
Desired solution
S 1
I R
Solution
I
REF

Current source with start up circuitry

D t th di d

Q
4

V
x
Q
5
@ initial condition
V =(n 1)V
Due to the diodes:

I
REF
R
2
V
x
=(n-1)V
D
@ steady state
Q
Q
2
Q
I
REF
R
2
+ 2V
BE
> (n-1) V
D

Q
1
Q
3
Start up
Current Source using Breakdown Diode

M3
M2

I
R
V
-
+

V
x

+
V
B
V
I
0
V
REF
R
-
N
V
V
B
x
~
Due to the high gain of the OPAM
N
V
V V
B
x REF
= =
NR
V
R
V
I
B REF
R
= =
W
| |
NR
V
W
L
W
I
B 2
o
|
|

|
|
.
|

\
|
~
Output current
L
3
|
.

\
| |
Summary
Widlar
|
|
.
|

\
|

~
) T ( I ) T ( R
) T ( V 2 V
ln
) T ( R
) T ( V
I
s 1
BE cc
2
th
o
Bootstrap
|
|
.
|

\
|
~
) T ( I
) T ( I
ln
) T ( R
) T ( V
I
s
REF
1
th
o
) T ( V ) L / W (
Breakdown
) T ( NR
) T ( V
) L / W (
) L / W (
I
B
1
2
o
~
= ~
n p
D p
2
i p
S
q
KT
D
N L
n qAD
I
Notice that:
|
|
.
|

\
|
~
S
C
BE
D p
I
I
ln
q
KT
V
q N L
For BJTs
I
C
=A J
S
e
VBE/Vth
T ln
AK
I
ln
V
V
V V
C
th
GO
th BE (

+ = o
A=Base-Emitter Area
J
S
=KT
o
e
-VGO/Vth
( ) T ln
AK
I
ln V V V
C
th GO BE
(

|
.
|

\
|
+ = o
K=Boltzman constant
o~3.2 process parameter
C / mV 2
V
V V
q
K
T
V
o
th
GO BE BE
~
(

=
c
c
o
V
GO
=1.205 V (Bandgap Voltage)
V
th
= kT/q (Thermal Voltage)
C / mV 2
T
V
o
BE
~
c
c
Thermal gradient
For the breakdown Diode
C / mV 3
V
o
D
+ ~
c
Thermal gradient
T c
Detailed derivation
T
V T ln
A
I
ln
q
K
T
v
th
k
C BE
(

o
+
(

o ~
c
c
q
K
V
V V
q
K

th
GO BE
o
(

=
V
V V
q
K

th
GO BE
(

=
2 . 3 10 x
25
5 . 0
11600
1

3
(

=
| | 2 . 23
11600
1
=
mV/oC 2 -

~
Temperature Coefficient (TC
F
)
c
c
=
A
A
=
OUT
OUT
OUT
OUT
F
T
I
I
1
T
I
I
1
TC
}
=
|
|
.
|

\
|
c
c
=
out
I
T
OUT
OUT
F
T
1
T
I
I
T
T
1
TC
P ti l i t t ti
Af
f
A

A

T
T T when
f
f f
Practical interpretation:
Sensitivity
T
A A f ] T TC [ f
2 2
F
AT
T
(

A
= A
f
f
T TC
F
Error in %
CMOS T h l CMOS Technology
Table 2.4-1
Approximate Performance Summary of CMOS Passive Components
Component Range of Relati e Temperat re Voltage Absol te Component
Type
Range of
Values
Relative
Accuracy
Temperature
Coefficient
Voltage
Coefficient
Absolute
Accuracy
Poly/poly
capacitor
0.3-0.4
fF/

2
0.06% 25 ppm/
o
C -50ppm/V 20%
MOS
capacitor
0.35-0.5
fF/

2
0.06% 25 ppm/
o
C -20 ppm/V 10%
capacitor fF/

Diffused
resistor
10-100
ohms/sq.
2%(5

m
width)
1500 ppm/
o
C 200 ppm/V 35%
Poly
resistor
30-200
ohms/sq.
2%(5

m
width)
1500 ppm/
o
C 100 ppm/V 30%
Ion impl 0 5-2k 1%(5

m 400 ppm/
o
C 800 ppm/V 5% Ion impl.
Resistor
0.5-2k
ohms/sq.
1%(5

m
width)
400 ppm/ C 800 ppm/V 5%
p-well
resistor
1-10k
ohms/sq.
2% 8000 ppm/
o
C 10k ppm/V 40%
Pinch
resistor
5-20k
ohms/sq.
10% 10k ppm/
o
C 20k ppm/V 50%
es sto o s/sq.
( ) T TC
C
C
0
0
A ~
A
What about this guy?
( ) % 25 . 0 100 e 25
C
C
rees deg 100 T
6
0
0
= ~
A
= A

Temperature Independent: Not very attractive for IC
solutions since it requires Zenner diode technologies
I
F
the diode impedance Z
in
<< R
1
, R
2

I
V
B
V
CC
2 1
BE B
R R
V 3 V
I
+

=
I
F
R1
D1
I
V
2 BE 2
2 1
BE B
REF
V R
R R
V 3 V
V +
+

=

D2
R2
V
REF
BE
2
1
B 2
2 1
V 2
R
R
V R
|
|
.
|

\
|
|
|
.
|

\
|
+
2 1
2
REF
R R
R
V
+
. \
. \
=
Condition for zero T sensitivity?
Bandgaps: Zero Temperature Dependence
This is the good one! This is the good one!
+

E
+
-
V
BE
-

V
out
=V
BE
+A V
th
V c
V
th
Generator
A
AK
C / mV 2
T
V
V
o
BE
BE
=
c
c

q
C / mV 2
q
AK
AV
o
th
| |
=
Vth generator = Widlar circuit
6 0 65 0 V V
2 . 23 10 x 2
K
q
A
3
+ ~
=
|
.
|

\
|
=

g
1.25
6 . 0 65 . 0 V V
REF out
~
+ ~ =
IMPLEMENTATIONS
V
I
3
V
cc
| |
I V

Q
4
ln
2
1
3
2
(
| |
|
|
.
|

\
|
= -
I
I
R
V
I
th

Q
R
1
R
2
+ Av
th
- +
ln
2
1
3
2
(

|
|
.
|

\
|
= - V
I
I
R
R
AV
th th

I
1
Q
1
Q
2
+
V
BE3 -
V
REF
Biasing For ,
4 3
3
-
+ = -
Q I
AV V V
th BE REF
R
3 I
2
-
Improved Bandgap Reference Voltage Improved Bandgap Reference Voltage

-
I
1
I
2
R
1
R
2

+
V
REF
-
Q
R
3
Q
1
Q
2
2 3 2 BE 1 BE
I R V V + =
Due to the OPAM
2 1 1 BE REF
2 1 1 2
2 3 2 BE 1 BE
R I V V
R I R I
I R V V
+ =
=
+
2
1
th
3
1
1 BE REF
I
I
ln V
R
R
V V
| |
| |
(

+ =
th
2
1
3
1
1 BE REF
V
R
R
ln
R
R
V V
|
|
.
|

\
|
|
|
.
|

\
|
+ =