Professional Documents
Culture Documents
Assembly equipment productivity is not improving fast enough to meet package cost improvement requirements Reliability degradation due to electromigration in lead free and other package metallurgies
01005 01005 01005 01005 01005 01005 01005 01005 01005 01005 35 130 CL 30 120 CL 30 110 CL 25 100 CL 25 90 CL 25 90 CL 25 80 CL 25 80 CL 25 70 CL 25 70 CL
R, L, C R, L, C R, L, C R, L, C R, L, C R, L, C R, L, C R, L, C R, L, C R, L, C R, L, C R, L, C 2a 260 2 260 2 260 2 260 2 260 2 260 2 260 2 260 2 260 2 260 2 260 2 260
Issues
Materials that enable 20 micron pitch without wire sweep, barrier metals for Cu wirebond pads to reduce intermetalic Ability to support 100 pitch on large die, reduce stress on low-K and compatibility with lead free reflow Increased thermal conduction, improved adhesion, higher modulas for thin applications Methodology and characterization database for frequencies above 10 GHz, Low modulas materials that reduce stress on low- wafer structures with low miosture absorption for high temperature lead free applications
LT CC
materials. Ferromagnetics for sensor and MEMs applications Low shrink dielectric and lower dielectric constant for high frequency application
IS WAS Wire bondwedge IS WAS T AB* IS WAS Flip chip area array*
Crosscut issues
BEOL and low K/Cu integration into packaging Wafer Level packaging impact on interconnect Thinned die issues (test, FEOL) New device types and structures impact on packaging Design and Simulation (SIP, RF, etc.)
DRAFT - NOT FOR PUBLICATION 14 July 2004 ITRS Summer Conference