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  • Ionrlxd Out P

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    Bhandari Suvas
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    This document discusses the band structure of V2O5. It shows that V2O5 has an indirect band gap of 1.93 eV between the Γ and Y k-points. The Fermi level lies between the valence band maximum at Y and conduction band minimum at Γ, making V2O5 a semiconductor.

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    Band structure

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    Ionrlxd.out.P

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    This document discusses the band structure of V2O5. It shows that V2O5 has an indirect band gap of 1.93 eV between the Γ and Y k-points. The Fermi level lies between the valence band maximum at Y and conduction band minimum at Γ, making V2O5 a semiconductor.

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    Attribution Non-Commercial (BY-NC)
    Download as PS, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    4 views1 page

    Ionrlxd Out P

    Uploaded by

    Bhandari Suvas
    This document discusses the band structure of V2O5. It shows that V2O5 has an indirect band gap of 1.93 eV between the Γ and Y k-points. The Fermi level lies between the valence band maximum at Y and conduction band minimum at Γ, making V2O5 a semiconductor.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PS, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 1

    Band Structure of V2O5

    8 7 6 5 4 3 Energy (eV) 2 1 0 -1 -2 -3 -4 -5 -6 X S Y Z T R k-point path EG (indirect) = 1.93 eV Y F

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