Philips Semiconductors

Product specification

N-channel enhancement mode TrenchMOSTM transistor

GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using trench technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications.

IRFZ44N

QUICK REFERENCE DATA

SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 49 110 175 22 UNIT V A W C m

PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION

PIN CONFIGURATION
tab

SYMBOL
d

g s

1 23

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 55 55 20 49 35 160 110 175 UNIT V V V A A A W C

ESD LIMITING VALUE

SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.5 k) MIN. MAX. 2 UNIT kV

THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS in free air TYP. 60 MAX. 1.4 UNIT K/W K/W

February 1999

Rev 1.000

Philips Semiconductors

Product specification

N-channel enhancement mode TrenchMOSTM transistor

STATIC CHARACTERISTICS
Tj= 25C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS V(BR)GSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55C VDS = VGS; ID = 1 mA Tj = 175C Tj = -55C VDS = 55 V; VGS = 0 V; VGS = 10 V; VDS = 0 V Tj = 175C Tj = 175C Tj = 175C MIN. 55 50 2.0 1.0 16 TYP. 3.0 0.05 0.04 15 -

IRFZ44N

MAX. 4.0 4.4 10 500 1 20 22 42

UNIT V V V V A A A A V m m

Gate source breakdown voltage IG = 1 mA; Drain-source on-state VGS = 10 V; ID = 25 A resistance

DYNAMIC CHARACTERISTICS
Tmb = 25C unless otherwise specified SYMBOL gfs Ciss Coss Crss Qg Qgs Qgd td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Total gate charge Gate-cource charge Gate-drain (miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 25 A VGS = 0 V; VDS = 25 V; f = 1 MHz MIN. 6 TYP. 1350 330 155 18 50 40 30 3.5 4.5 7.5 MAX. 1800 400 215 62 15 26 26 75 50 40 UNIT S pF pF pF nC nC nC ns ns ns ns nH nH nH

VDD = 44 V; ID = 50 A; VGS = 10 V

VDD = 30 V; ID = 25 A; VGS = 10 V; RG = 10 Resistive load Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 25 A; VGS = 0 V IF = 40 A; VGS = 0 V IF = 40 A; -dIF/dt = 100 A/s; VGS = -10 V; VR = 30 V TYP. 0.95 1.0 47 0.15 MAX. 49 160 1.2 UNIT A A V ns C

February 1999

Rev 1.000

Philips Semiconductors

Product specification

N-channel enhancement mode TrenchMOSTM transistor

AVALANCHE LIMITING VALUE
SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 45 A; VDD 25 V; VGS = 10 V; RGS = 50 ; Tmb = 25 C MIN. TYP. -

IRFZ44N

MAX. 110

UNIT mJ

120 110 100 90 80 70 60 50 40 30 20 10 0

PD%

Normalised Power Derating

1000 ID/A RDS(ON) =VDS/ID 100 tp = 1 us 10us 100 us DC 10 1 ms 10ms 100ms

20

40

60

80 100 Tmb / C

120

140

160

180

10

VDS/V

100

Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tmb)

Normalised Current Derating

Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp
Zth/(K/W)

120 110 100 90 80 70 60 50 40 30 20 10 0

ID%

10

1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0 tp T t

P D

tp

D=

20

40

60

80 100 Tmb / C

120

140

160

180

0.001

1E-06

0.0001

0.01 t/s

100

Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 10 V

Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T

February 1999

Rev 1.000

Philips Semiconductors

Product specification

N-channel enhancement mode TrenchMOSTM transistor

IRFZ44N

100

16 10

9 8.5

30

VGS/V = 8.0 7.5

ID/A
80

gfs/S

25

20
60

7.0
15

6.5
40

6.0
20

10

5.5 5.0 4.5 10 4.0

VDS/V

20

40

ID/A

60

80

100

Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS

RDS(ON)/mOhm VGS/V = 6

Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V

BUK959-60

40

2.5

Rds(on) normlised to 25degC

35

2
30 6.5 7 25 8 20 9 10

1.5

15

10

10

20

30

40

ID/A

50

60

70

80

90

0.5 -100

-50

50 Tmb / degC

100

150

200

Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS

100 ID/A 80

Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 10 V

VGS(TO) / V max. 4 typ.
BUK759-60

60

3 min.

40

20 Tj/C = 0 175 25

6 VGS/V

10

12

0 -100

-50

50 Tj / C

100

150

200

Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj

Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

February 1999

Rev 1.000

Philips Semiconductors

Product specification

N-channel enhancement mode TrenchMOSTM transistor

IRFZ44N

1E-01

Sub-Threshold Conduction

100 IF/A 80

1E-02 2% typ 98%

60 Tj/C = 40 175 25

1E-03

1E-04
20

1E-05
0

1E-06

0.2

0.4

0.6 0.8 VSDS/V

1.2

1.4

Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS

2.5

Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj

WDSS%

120 110 100 90 80

Thousands pF

1.5 Ciss 1

70 60 50 40 30 20
Coss Crss

.5

10 0 20 40 60 80 100 120 Tmb / C 140 160 180

0 0.01

0.1

VDS/V

10

100

Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
12 VGS/V 10 VDS = 14V 8 VDS = 44V 6

Fig.15. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 49 A

+
L VDS VGS 0 RGS T.U.T. R 01 shunt

VDD

-ID/100

10

20

QG/nC

30

40

50

Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 50 A; parameter VDS

Fig.16. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS VDD )

February 1999

Rev 1.000

Philips Semiconductors

Product specification

N-channel enhancement mode TrenchMOSTM transistor

IRFZ44N

+
RD VDS VGS 0 RG T.U.T.

VDD

Fig.17. Switching test circuit.

February 1999

Rev 1.000

Philips Semiconductors

Product specification

N-channel enhancement mode TrenchMOSTM transistor

MECHANICAL DATA
Dimensions in mm Net Mass: 2 g

IRFZ44N

4,5 max 10,3 max

1,3

3,7 2,8
5,9 min

15,8 max

3,0 max not tinned

3,0

13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54

0,9 max (3x)

0,6 2,4

Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8".

February 1999

Rev 1.000

Philips Semiconductors

Product specification

N-channel enhancement mode TrenchMOSTM transistor

DEFINITIONS
Data sheet status Objective specification Product specification Limiting values

IRFZ44N

This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

February 1999

Rev 1.000

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