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V th Ith
dV dI
19-Feb-11
Gi s l diode silicon c phn cc thun sao cho c dng in im lm vic nm trn im gin on (the knee): E = I.R + 0.7 (V) I = (E 0.7)/R (A)
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(V = 0.7 in p dn ca diode V)
19-Feb-11
v ( t ) = E + A sin t
p dng nguyn l xp chng cho mch tuyn tnh: E 0 .7 A i (t ) = I + i = + s in t R R + rD
v (D ) = 0 .7 +
rD A s i n t R + rD
rD =
0.026 () I
i=
e A = sin t R + rD R + rD
E 0 .7 A + s in t R R + rD r A s in t = 0 .7 + D R + rD
- Tng hp:
i (t ) = I + i =
v
(D )
19-Feb-11
2.5 ng ti
Phn tch tn hiu nh c th s dng pp th: ng ti DC biu din mi quan h ca I,V trn diode khi c phn cc ca in p DC.
2.5 ng ti
- im lm vic ca diode chnh l giao im ca ng ti v c tuyn. - Giao im ny c gi l im lm vic tnh hay im phn cc, k hiu l Q.
19-Feb-11
2.5 ng ti
10
19-Feb-11
2.7 Chnh lu
- Mch chnh lu l mch ch cho php dng in chy qua n theo mt chiu. - Bin in xoay chiu thnh in mt chiu. - Diode s dng trong mch ny gi l diode chnh lu.
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V d
Cho mch in nh hnh v, diode Ge c V= 0.2V, ni tr rD khng ng k. Ti RL = 9, ngun tn hiu vo c ri = 1. 1. Bit in p vo c dng xung vung hoc hnh sin, bin 10V. Hy v dng sng v xc nh in p trn ti RL. 2. Vn cu hi 1 nhng khi vi(t) l hnh sin c bin 1V. Xc nh gi tr in p trn ti ti thi im t = /2.
VL
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19-Feb-11
Hng dn
1. - Dng qua ti RL: iL =
v i V ri + RL
- p ri trn ti:
v L (t) = v i V ri + RL x RL
V vL vi
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vL vi
-10
Hng dn
2. Khi vi nh, khng th b qua V. Diode ch dn in trong khong thi gian vi > V, ti t = /2:
v L (t) =
vi 1V V=0.2V t
v i V ri + R L
x RL =
(sin t 0 .2 ) .9 = 0 .72 V 10
VL 0.72V t
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19-Feb-11
c tnh: - Ch to bng vt liu chu nhit v ta nhit tt. - Hot ng ch phn cc ngc. - on lm vic trn phn c tuyn song song vi trc tung.
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VZ
V1
V2
A Q B
IZmin IZ IZmax
V1: in p 1 chiu cha n nh. V2: in p ly ra trn ti n nh. R1: in tr hn dng cho diode, sao cho Q nm trn on AB.
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Imax =
Pmax Vng
19-Feb-11
V d
Cho mch in nh hnh v: R1 = 300; R2 = 1200. Xc nh phm vi thay i ca Vi c in p ra trn ti R2 n nh mc 10V. (Chn loi diode Zener c VZ = 10V, IZmin = 10mA, IZmax = 30mA.)
IR Vi+Vi IZ IL VL
Hng dn
- Dng qua ti:
IL =
VL = 8.3 (mA ) R2
Vimin = 15.5 V
; Vi max = 21.5V
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