IN T CNG SUT

Ti liu tham kho

in t cng sut L Vn Doanh Gio trnh in t cng sut Nguyn Vn Nh in t cng sut Nguyn Bnh dqvinh@dng.vnn.vn 0903 586 586

CHNG 1 M U CC LINH KIN IN T CNG SUT

1.1 Khi nim chung

in t Cng sut ln

Cc linh kin in t cng sut c s dng trong cc mch ng lc cng sut ln

S khc nhau gia cc linh kin in t ng dng (in t iu khin) v in t cng sut Cng sut: nh ln Chc nng: iu khin ng ct dng in cng sut ln Cc linh kin in t cng sut ch lm chc nng ng ct dng in cc van

iu khin

ng lc IC

IB Thi im Cng sut

Transistor iu khin: Khuych i

IC

R iC iB B uBE E C uCE iE
IB2 UCE1 U UCE = UCE1
U R

UCE = U - RIC A A

IB2 > IB1 IB1 > 0 IB = 0

IB

UBE < 0

UCE

Transistor cng sut: ng ct dng in

c tnh Volt Ampe ca van cng sut l tng

i i b

iu khin

a u d

i tng nghin cu ca in t cng sut

Cc b bin i cng sut Cc b kha in t cng sut ln Chnh lu

BB in p xoay chiu (BAX) Bin tn

BB in p mt chiu (BXA)

Nghch lu

1. 2. Cc linh kin in t cng sut

1.2.1 Cht bn dn - Lp tip gip P - N
Cht bn dn: nhit bnh thng c dn in nm gia cht dn in v cht cch in Loi P: phn t mang in l l trng mang in tch dng Loi N: phn t mang in l cc electron mang in tch m J + + + + P + + + P + + + + + + + + + + + +
Min bo ha - Cch in

+ +

Phn cc ngc

N + + +
Min bo ha - Cch in

+ + +

+ + +

N Min bo ha - Cch in

+ + +

Phn cc thun

N + + +
Min bo ha - Cch in

+ + +

+ + +

+
i

1.2.2 Diode
Cu to, hot ng
uF iF

Anode A

Katode P N K

Hng thun
K iR uR

Hng ngc

R: reverse ngc F: forward thun

c tnh V A Diode l tng Hai trng thi: m ng I Diode thc t

F

Nhnh thun m

[A]

100

Nhnh ngc ng

Nhnh thun m
50 U[BR] UR [V] 800 400 0 UF [V] 1 1,5

dU R rR = dI R in tr ngc trong diode

UBR: in p nh thng

Nhnh ngc ng

T = 160 C j o T = 30 C j

20 URRM URSM 30 IR [mA]

UTO: in p ri trn diode

dU F dI F in tr thun trong diode rF =

c tnh ng ca diode
I

UK: in p chuyn mch trr: Thi gian phc hi kh nng ng irr: Dng in chuyn mch phc hi

L UK S

Qr = irr dt
0

t rr

ng S

: in tch chuyn mch

iF iF = I

iF

trr

0,1 irrM t

O
iR irrM

Qu p trong

irr iR irr uF

Qr t

Uk

uR = Uk

uR

uRM

Bo v chng qu p trong

R
uR

C
iRC
O

ng

L
irr iRC t Uk

iL irr Uk

i L = irr + i RC u = U L diL R k dt

Cc thng s chnh ca diode

IF [A]

in p: Gi tr in p nh thng UBR Gi tr cc i in p ngc lp li: URRM Gi tr cc i in p ngc khng lp li: URSM Dng in - nhit lm vic Gi tr trung bnh cc i dng in thun: IF(AV)M Gi tr cc i dng in thun khng lp li: IFSM

100

Nhnh thun m
50 U[BR] UR [V] 800 400 0 UF [V] 1 1,5

Nhnh ngc ng

T = 160 C j o T = 30 C j

20 URRM URSM 30 IR [mA]

Diode thc t: IDB30E60 Infineon Technologies

1.2.3 Transistor lng cc (BT)

(Bipolar Transistor) Cu to, hot ng
C N B P N E E
R iC iB B uBE E C uCE iE
uEB

C P B N P

R iC

iB B

C uEC E iE

c tnh Volt Ampe

Min m bo ha
IC UCE = UCE1
b a

U R

c tnh ngoi IC = f(UCE) c tnh iu khin IC = f(IB)

UCE = U - RIC A A

IB2 > IB1 IB1 > 0

ng
IB2 UCE1 U

IB = 0

IB

UBE < 0

UCE

Min ng bo ha

ICE IB = 0 ICE0 ICER ICES ICEU O b) RB UBR(CE0)

a)

UBR(CER) UBR(CES) UBR(CEU) UCES UCE0 UCER UCEU RB UCE c) ICEU

+
-IB UBE

-IB

+
UBE

0 H mch B E (IB = 0) R Mch B E theo hnh b) S Ngn mch B E (RB 0) U Mch B E theo hnh c)

Qu trnh qu ca transistor

iB IB 0.1IB O td tr iC uCE ts tf 0.9IB t

0.1IC

0.9IC

IC toff

0.1IC

ton

Mch tr gip ng m

Cc thng s chnh in p: Gi tr cc i in p colector emitor UCE0M khi IB = 0 Gi tr cc i in p emitor baz UEB0M khi IC =0 Dng in: Gi tr cc i ca cc dng in IC, IB, IE

(in t cng sut Nguyn Bnh)

Transistor thc t - MJW3281A (NPN) ON Semiconductor

1.2.4 Transistor trng MOSFET

(Metal Oxid Semiconductor Field Effect Transistor)
D N P N iD
P N D N

uGS

OXID

OXID

D
D G uGS S iD uDS

G S

c tnh ng
CGD RG

D iD

R +

on + off

G uGS S

CDS uDS

CGS

UG -

GS

0.9UG UG 0.1UG 0.9U U 0.1U tr td(on) ton td(off) toff tf UGS(th) uDS t 0.9U

iD

MOSFET thc t - 19MT050XF International Rectifier

1.2.5 Transistor lng cc cng cch ly - IGBT Insulated Gate Bipolar Transistor

G
G

E
E

c tnh ng
on off UG RG G

iC C

U E uCE uGE

UG uGE 0.1UCM uCE U 0.1ICM tr td(on) ton td(off) ICM UGE(th)

0.9UG

t iC 0.9ICM ICT 0.1ICM tf

toff

IGBT thc t 1MB-30-060 Fuji Electric

1.2.6 Thyristor
Cu to Hot ng

A P N P N K J1 J2 J3

A P G N P N K N P G iG

A i i1 i2 uAK K u R

Trng thi: M ng Kha K hiu

Hng ngc

uR iR iG uG A K iT iD Hng thun uT uD

T: Thun D: Kha R: Ngc

iu kin m Thyristor

UAK > 0 Xung iu khin a vo cc iu khin. iu kin ng Thyristor t in p ngc ln A K

c tnh Volt - Ampe Thyristor l tng Ba trng thi: ng m kha Thyristor thc t UBR: in p ngc nh thng UBO: in p t m ca thyristor UTO: in p ri trn Thyristor IH: Dng duy tr (holding) IL: Latching Cc thng s chnh Tng t nh diode. URRM = UDRM
10 3 U[BR] IL IN UR [V] 10 10
2 -3

Nhnh thun m

Nhnh ngc ng
2

Nhnh kha kha

[A] IT ID

10

10 1 10 10
-1

Nhnh thun m Nhnh kha kha

IG = 0 IG = 25 mA U[BR] 1 10 UT 10
2

-2

10

1
-3

IG = 0 10 IG = 25 mA 10 10

10 3

U[TD]
-2

UD [V]

-1

Nhnh ngc ng

IR [A]

c tnh iu khin ca thyristor:

iG

iG R U uG

40 UG[V] 30 20

IG 2
t

(PGM)=/12 (PGM)=/6 UG=U-RIG

iG

UGT O

-400C IGT 1 IG[A] 2

c tnh ng

Tn tht cng sut khi m thyristor

M thyristor

Kha thyristor

A + P N G P N iC K J1 J2 J3 C iC

uD

uD
iC

ng thyristor

toff

Bo v qu p trong Thi gian ng thyristor Gc an ton

Thyristor thc t - 22RIA SERIES International Rectifier

1.2.7 GTO
Gate Turn Off Thyristor
A P N P

J1 J2 J3 G iRG

iFG iRG
K

G uFG uRG K ir (iD) ur (uD)

c tnh ng M GTO
tgd uD tgr ir

UD

0.9UD 0.1UD t

tgt iFG IFG10 0.2IFG

ng GTO
iT tgs tgf uD

IT=I

Mch tr gip
UDP
iD I L uD

ITQ

0.9IT

O tgq ttq

iT iRG

O iRG uRG iRG QGQ uRG IRG

uRG

GTO thc t - FG3000FX-90DA Misubishi Electric

1.2.8 Triac

Hng ngc

in p thun in p kha Dng in thun Dng in kha Dng in v in p cc iu khin

Dng in thun Dng in kha in p thun in p kha

Hng thun

c tnh Volt - Ampe Nhnh m UG > 0; IG > 0 UD > 0 UG < 0; IG < 0 Nhnh kha

UG > 0; IG > 0 UDR > 0 UG < 0; IG < 0 Nhnh kha Nhnh m

Triac thc t - 2N6344 - ON Semiconductor

CHNG 2: MT S KHI NIM C BN TRONG IN T CNG SUT

2.1 Nng lng tch ly vo cun khng v gii phng t cun khng

t0

t0
t1

t0

uL dt = QL (t0 , t1 ); uL =
L ( t1 ) L ( t0 )

dL di =L L dt dt
iL ( t1 )

QL (t0 , t1 ) =

dL = L

iL ( t0 )

diL = L (t1 ) L (t0 ) = L [iL (t1 ) iL (t0 ) ]

2.2 Nhp v s chuyn mch

Nhnh chnh Nhnh ph Linh kin TCS chnh Linh kin TCS ph Nhp l khong thi gian gia hai ln lin tip thay i trng thi ca linh kin in t cng sut trong mch. Tn ca nhp l tn ca linh kin ang dn in.

Chuyn mch l trng thi in t xy ra trong mch b bin i, c c trng bng vic dng in trong mt nhnh chuyn sang mt nhnh khc trong khi dng in tng chy ra t nt gia hai nhnh vn khng i.

Nhnh chnh

in p chuyn mch Chuyn mch ngoi Chuyn mch t nhin Chuyn mch trong Chuyn mch trc tip Chuyn mch gin tip Chuyn mch nhiu tng Thi gian chuyn mch Gc chuyn mch Chuyn mch tc thi

Nhnh ph

Nhnh chnh Nhnh chnh

2.3 Cc ng c tnh
c tnh ngoi (c tnh ti): Mi quan h gia in p u ra v dng in u ra ca b bin i c tnh iu khin: Mi quan h gia in p u ra v i lng iu khin ca b bin i

2.4 H s cng sut ca b bin i

P = S
P: Cng sut hu cng S: Cng sut biu kin

H s cng sut PF (Power Factor)

P = mUI(1)cos(1) m: s pha U: Gi tr hiu dng in p iu ha ca pha I(1): Gi tr hiu dng ca thnh phn bc 1 dng in pha (1): Gc chm pha ca thnh phn bc 1 dng in pha so vi in p S = mUI I: Gi tr hiu dng dng in pha

I 2 = I (2n )
n =1

2 S 2 = m 2U 2 I (2n ) = m 2U 2 I (1) + m 2U 2 I (2n ) n =1 n=2

2 2 2 2 2 S(1) = m 2U 2 I (1) = m 2U 2 I (1) cos 2 (1) + m 2U 2 I (1) sin 2 (1) = P 2 + Q(1)

mUI(1): Cng sut biu kin ca thnh phn bc 1 Q(1): Cng sut phn khng ca thnh phn bc 1

2 S 2 = P 2 + Q(1) + D2

D = mU

2 I (n) n=2

D: Cng sut phn khng bin dng

= =

P P +Q + D
2 2 (1) 2

= cos (1) H s cng sut PF (Power Factor)

I (1) I

H s mo dng DF (Distortion Factor)

2 I (n) n=2

THDI =

mo dng tng THD (Total Harmonic Distortion)

I (1)