6MBP150RA120

IGBT-IPM R series
Features
Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrease in number of parts in built-in control circuit

1200V / 150A 6 in one-package

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25C unless otherwise specified)
Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current Symbol VDC VDC(surge) VSC VCES IC ICP -IC PC Tj VCC *1 Vin *2 Iin VALM *3 IALM *4 Tstg Top Viso *5 Rating Min. 0 0 200 0 0 0 0 -40 -20 Max. 900 1000 800 1200 150 300 150 1040 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 V V V V A A A W C V V mA V mA C C kV Nm Nm Unit

DC 1ms DC

Collector power dissipation One transistor Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5)

Fig.1 Measurement of case temperature

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 Nm

Electrical characteristics of power circuit (at Tc=Tj=25C, Vcc=15V)

Item INV Symbol Condition VCE=1200V input terminal open Collector current at off signal input ICES Ic=150A Collector-Emitter saturation voltage VCE(sat) -Ic=150A Forward voltage of FWD VF Min. Typ. Max. 1.0 2.6 3.0 Unit mA V V

6MBP150RA120
Electrical characteristics of control circuit(at Tc=Tj=25C, Vcc=15V)
Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV Over current protection delay time Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm *7 Switching frequency of IPM Symbol Iccp ICCN Vin(th) VZ TCOH TCH TjOH TjH IOC tDOC VUV VH tALM tSC RALM

IGBT-IPM

Condition Min. Typ. Max. fsw=0 to 15kHz Tc=-20 to 100C *7 3 18 fsw=0 to 15kHz Tc=-20 to 100C *7 10 65 ON 1.00 1.35 1.70 OFF 1.70 2.05 2.40 Rin=20k ohm 8.0 VDC=0V, Ic=0A, Case temperature, Fig.1 110 125 20 surface of IGBT chips 150 20 Tj=125C 225 Tj=25C Fig.2 10 11.0 12.5 0.2 1.5 2 Tj=25C Fig.3 12 1425 1500 1575

Unit mA mA V V V C C C C A s V V ms s ohm

Dynamic characteristics(at Tc=Tj=125C, Vcc=15V)

Item Switching time (IGBT) Switching time (FWD) Symbol Condition ton toff trr IC=150A, VDC=600V IF=150A, VDC=600V Min. 0.3 Typ. Max. 3.6 0.4 Unit s s s

Thermal characteristics(Tc=25C)
Item Junction to Case thermal resistance Case to fin thermal resistance with compound INV IGBT FWD Symbol Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.12 0.29 Unit C/W C/W C/W

Recommendable value
Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW Min. 200 13.5 1 2.5 2.5 Typ. 15 Max. 800 16.5 20 3.0 3.0 Unit V V kHz Nm Nm

6MBP150RA120
Block diagram

IGBT-IPM

Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection

Outline drawings, mm

Mass : 920g

6MBP150RA120 Characteristics (Representative)

Control Circuit
P ow er s up ply c urre nt v s. S w itch ing fre qu en cy Tj= 10 0 C
80 P o w e r su p p ly c u rren t : Ic c (m A ) 70 60 50 40 30 20 10 0 0 5 10 15 20 25 S w itc hin g freq ue n cy : fs w (k H z )
0 12 13 14 15 16

IGBT-IPM

In p u t sig n a l th re sh o ld vo lta g e vs. P o w e r su p p ly vo lta g e

2.5

Tj= 2 5 C Tj= 1 2 5 C

P -s ide N -s id e

V c c =1 5 V V c c =1 3 V

Inpu t s ignal th res hold voltage

V c c =1 7 V

: V in(on ),V in(off) (V )

2 } V in(o ff) 1.5 } V in(o n)

V c c =1 7 V V c c =1 5 V V c c =1 3 V

0.5

17

18

P ow er s up ply voltage : V cc (V)

U n d e r vo lta g e v s. J u n c tio n te m p e ra tu re
14

U n d e r vo lta g e h y ste ris is v s. Jn c tio n te m p e ra tu re

1

U n d e r v o lta g e : V U V T (V )

12

U nd er vo ltage h ysterisis : V H (V )

0.8

10

0.6

0.4

0.2

0
20 40 60 80 100 120 140

20

40

60

80

10 0

12 0

14 0

J u n c tio n te m p e ra tu r e : T j (C )

Jun ction tem p erature : T j (C )

O v e r h e a tin g p ro te c tio n : T c O H ,T jO H (C )

A la rm ho ld tim e v s . P o w e r s u p ply v o lta ge

3

O ve r h e a tin g ch a ra c te ris tics Tc O H ,T jO H ,T cH ,T jH vs . V cc

20 0

A la rm h o ld tim e : tA L M (m S e c)

O H h y s te ris is : T c H ,T jH (C )

T jO H 15 0 TcO H

2.5 T j= 125C 2 T j= 25C 1.5

10 0

50 T c H ,T jH

0.5

12

13

14

15

16

17

18

0 12 13 14 15 16 17 18

P o w e r s u p p ly vo lta g e : V c c (V )

P o w e r s u p p ly v o lta g e : V c c (V )

6MBP150RA120
Inverter

IGBT-IPM

C o lle c to r c u rre n t vs . C o lle cto r-E m itte r vo lta g e T j= 2 5 C

250 C o lle c tor C u rre n t : Ic (A ) Vcc=15V C o llec tor C u rre n t : Ic (A ) Vcc=17V 200 Vcc=13V 150

C o lle c to r c u rre n t vs . C o lle cto r-E m itte r vo lta g e T j= 1 2 5 C

2 50 Vcc=15V Vcc=17V 2 00 Vcc=13V 1 50

100

1 00

50

50

0 0 .5 1 1 .5 2 2 .5 3 3 .5 C o lle cto r-E m itter v o lta ge : V c e (V )

0 0 .5 1 1 .5 2 2 .5 3 3 .5 C o lle cto r-E m itter v o lta g e : V c e (V )

S w itc h in g tim e vs . C o lle cto r c u rre n t E d c = 6 0 0 V ,V cc = 1 5 V ,T j= 2 5 C

10 0 0 0 S w itch ing tim e : to n ,to ff,tf (n S e c ) 1 0 0 00 S w itch ing tim e : ton ,to ff,tf (n S e c )

S w itc h in g tim e vs . C o lle cto r c u rre n t E d c = 6 0 0 V ,V cc = 1 5 V ,T j= 1 2 5 C

to ff to n

to ff to n

1 0 00

1 000

tf

tf 1 00

1 00

10 0 50 1 00 1 50 2 00 2 50 C o lle cto r cu rre nt : Ic (A )

10 0 50 1 00 1 50 2 00 2 50 C o lle cto r cu rre n t : Ic (A )

F o rw a rd cu rre n t vs . F o rw a rd vo lta g e
R e ve rs e rec o v e ry c urre n t : Irr(A ) R e v e rs e re c o v e ry tim e : trr(n S e c ) 2 50 12 5 C F o rw a rd C u rre n t : If (A ) 2 00 2 5 C

R ev e rs e re c o ve ry c h a ra cte ristics trr,Irr v s. IF

trr1 2 5 C

1 00

trr2 5 C

1 50

Irr1 2 5 C Irr2 5 C

1 00

50

0 0 0 .5 1 1 .5 2 2 .5 3

10 0 50 1 00 1 50 2 00 2 50 F orw a rd c u rren t : IF (A )

F o rw a rd v o lta g e : V f (V )

6MBP150RA120

IGBT-IPM

T ra n sie n t th e rm a l re sis ta n c e
T h e rm a l re s is ta n c e : R th (j-c ) (C /W ) 1 FW D 2 100 1 800 1 500 1 200 9 00 6 00 3 00 0 0.01 0 .1 1 0

R e ve rs e d b ia s e d s a fe o p e ra tin g a re a V cc = 1 5 V ,Tj < = 1 2 5 C

0 .1 IG B T

C o lle cto r cu rre n t : Ic (A )

SC SO A (n o n -re pe titiv e p uls e )

0.01

RBSO A (R e p e titiv e p u ls e ) 2 00 4 00 6 00 8 00 1 000 1 200 1 400

0 .0 01 0 .0 01

P u lse w id th :P w (s e c )

C o llec tor-E m itte r v o lta g e : V ce (V )

P o w e r d e ra tin g fo r IG B T (p e r d e vice )
C o lle c te r P o w e r D is s ip a tio n : P c (W ) 1200 C o lle c te r P o w e r D is s ip a tion : P c (W ) 500

P o w e r d e ra tin g fo r F W D (p e r d e v ic e )

1000

400

800

300

600

200

400

200

100

0 0 20 40 60 80 100 120 140 160 C a se T e m p e ra tu re : T c (C )

0 0 20 40 60 80 100 120 140 160 C a se T e m p e ra tu re : T c (C )

S w itc h in g lo ss : E o n ,E o ff,E rr (m J/c yc le )

60

S w itc h in g lo ss : E o n,E off,E rr (m J/c yc le )

S w itch in g L o ss vs . C o lle cto r C u rre n t E d c = 6 0 0 V ,V cc = 1 5 V ,T j= 2 5 C

S w itc h in g L o ss v s . C o lle cto r C u rre n t E d c = 6 0 0 V ,V cc = 1 5 V ,T j= 1 2 5 C

60 50 E on

50

40 E on

40

30

30 E o ff 20 E rr 10

20

E o ff

10

E rr

0 0 50 1 00 1 50 2 00 2 50

0 0 50 1 00 1 50 2 00 2 50

C ollec to r c u rre n t : Ic (A )

C ollec to r c u rre n t : Ic (A )

6MBP150RA120

IGBT-IPM

O ve r c urre n t pro te ctio n le v el : Io c (A )

O v e r c u rre n t p ro te c tio n v s . Ju n c tio n te m p e ra tu re V cc = 1 5 V

6 00 5 00 4 00 3 00 2 00 1 00 0 0 20 40 60 80 1 00 1 20 1 40 J u nc tio n tem p e ra tu re : T j(C )