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  • MOSFET - Discussion5

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    1. The MOSFET equations describe the three regions of operation: cut-off, linear, and saturation based on the relationships between gate-source voltage (VGS), threshold voltage (VT), and drain-source voltage (VDS). 2. An example circuit calculates the width (W) and resistance (R) values required to establish a drain current (IDS) of 0.1 mA and drain-source voltage (VDS) of 2 V for a PMOS transistor in saturation mode. 3. Another example calculates the drain-source (VDS) and gate-source (VGS) voltages for different resistor (R) values to maintain a constant drain current of 100 μA

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    Its discussion about MODFET

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    1. The MOSFET equations describe the three regions of operation: cut-off, linear, and saturation based on the relationships between gate-source voltage (VGS), threshold voltage (VT), and drain-source voltage (VDS). 2. An example circuit calculates the width (W) and resistance (R) values required to establish a drain current (IDS) of 0.1 mA and drain-source voltage (VDS) of 2 V for a PMOS transistor in saturation mode. 3. Another example calculates the drain-source (VDS) and gate-source (VGS) voltages for different resistor (R) values to maintain a constant drain current of 100 μA

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    Download as PDF, TXT or read online from Scribd
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    52 views3 pages

    MOSFET - Discussion5

    Uploaded by

    uama87
    1. The MOSFET equations describe the three regions of operation: cut-off, linear, and saturation based on the relationships between gate-source voltage (VGS), threshold voltage (VT), and drain-source voltage (VDS). 2. An example circuit calculates the width (W) and resistance (R) values required to establish a drain current (IDS) of 0.1 mA and drain-source voltage (VDS) of 2 V for a PMOS transistor in saturation mode. 3. Another example calculates the drain-source (VDS) and gate-source (VGS) voltages for different resistor (R) values to maintain a constant drain current of 100 μA

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    of 3

    1.

    MOSFET Equations a) N-channel MOSFET Cut Off Linear


    ! Saturation ! ! VGS " VT VGS > VT , VDS " VGS # VT ! VGS > VT , VDS > VGS " VT ! IDS = 0

    IDS = n Cox

    W L

    # VDS 2 & V " V V " %( GS ((1 + )VDS ) T ) DS 2 ' $

    1 W IDS = n Cox (VGS " VT ) 2 (1 + #VDS ) 2 L

    !
    !

    The simplest model in SPICE (Level 1 or default model) uses the above equations. Parameter nCox VT0 ! SPICE Parameter KP VTO LAMBDA Units A/V2 V V-1 Typical Values 200 0.5 1.0 0.05 0.005

    b) P-channel MOSFET Cut Off Linear

    VSG " VT VSG > VT , VSD " VSG # VT


    ! VSG > VT , VSD > VSG " VT !

    ISD = 0

    ISD = p Cox

    W# V 2& %(VSG " VT )VSD " SD ((1 + )VSD ) L$ 2 '

    ! Saturation ! !

    1 W ISD = p Cox (VSG " VT ) 2 (1 + #VSD ) 2 L

    !
    !

    Example) VS = 4 V, VG = 2 V, VD = 1 V VT = -0.8 V, ! = 0, Kp = 100 A/V2 W = 10 m, L= 2 m Find MOSFET type, operation region, IDS. - Solution VDS > VGS " VT # saturation

    ISD = IDS

    100 10 (2 " "0.8 ) 2 (1 + 0) = 360A 2 2 = "360A

    2. MOSFET Circuits Example) The PMOS transistor has VT = -2 V, Kp = 8 A/V2, L = 10 m, ! = 0. Find the values required for W and R in order to establish a drain current of 0.1 mA and a voltage VD of 2 V. - Solution VD = VG " VSD > VSG # VT " saturation

    1 W 8 W IDS = Kp (VSG # VT ) 2 (1 + $VSD ) = (3 # 2) 2 (1 + 0) = 0.1mA 2 L 2 10 V 2 IR = D = = 0.1mA R R W = 250m, R = 20 k%

    Example) The PMOS transistor has VT = -1 V, Kp = 8 A/V2, W/L = 25, ! = 0. For I = 100 A, find the VSD and VSG for R = 0, 10k, 30k, 100k. - Solution ! = 0 (no channel length modulation)

    1) R = 0 VD = VG " VSD > VSG # VT " saturation 1 W 8 ISD = Kp (VSG # VT ) 2 = $ 25 $ (VSG # 1) 2 = 100 2 L 2 VSG = 2V VSD = 2V 2) R = 10 k VD # VG = IR = 100 $ 10 k = 1 " VSD = VSG # VT " saturation or linear 1 W 8 ISD = Kp (VSG # VT ) 2 = $ 25 $ (VSG # 1) 2 = 100 2 L 2 VSG = 2V VSD = 1V 3) R = 30 k VD # VG = IR = 100 $ 30 k = 3 " VSD < VSG # VT " linear ISD = Kp VSD W V V ((VSG # VT )VSD # SD ) = 8 $ 25 $ ((VSD + 3 # 1)VSD # SD ) = 100 L 2 2 % 0.24V VSG = 3.24V
    2 2

    4) R = 100 k VD # VG = IR = 100 $ 100 k = 10 " VSD < VSG # VT " linear ISD = Kp VSD W V 2 V 2 ((VSG # VT )VSD # SD ) = 8 $ 25 $ ((VSD + 10 # 1)VSD # SD ) = 100 L 2 2 % 0.06V VSG = 10.06V

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