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DEPARTMENT OF ELECTRONICS AND COMMUNICATION SB-BIT, MEERUT MICROWAVE ENGINEERING (EEC-603) TUTORIAL-1 (Unit-1)

Q1. Show that TEM mode cannot exist in the hollow waveguide. Q2. Define dominant mode, degenerate mode, group velocit waveguide. Q!. Derive the field e"uations for TE mode in rectangular waveguide. Q#. $hat do ou mean % microwave cavities& Descri%e the rectangular cavit resonator. Q'. $rite short note on Microstrip Transmission (ine. Q). * TE11 mode is propagating through a circular waveguide. The radius of the guide is ' cm and the guide contains an air dielectric +,-np.1./#10, find fc, 1g and 2g for an operating fre"uenc of !.3 456. Q7. Determine the cut off wavelength for the dominant mode in a rectangular waveguide of %readth 13 cms. 8or a 2.' 456. Signal propagated in this waveguide in the dominant mode, find 1g, 9g and 9p.. Q/. $hat are the various wa s in which the electromagnetic waves can %e coupled to rectangular waveguides & 5ow TE13 mode can %e excited in rectangular waveguide& Q:. Derive the field component present in TM11 mode of propagation in rectangular waveguide and draw its field pattern. Q13. $rite a short note on power loss in a waveguide. and phase velocit in the context of

DEPARTMENT OF ELECTRONICS AND COMMUNICATION SB-BIT, MEERUT MICROWAVE ENGINEERING (EEC-603) TUTORIAL(Unit- )

Q1. Show that the diagonal elements of the s;matrix of a Tee;<unction are not all 6eroes. Q2. =lassif terminators. Explain each of them with relevant figures. Q!. Explain the wor>ing of E;plane Tee. Derive its ?S@ matrix when the main arm is perfectl matched and power A is fed from *uxiliar arm. Q#. Explain the wor>ing of Directional couplers. Define its four coupling parameters. Q'. Explain the wor>ing and applications of a circulator. *re the reciprocal or Bon;reciprocal device& Q). $hat is 8arada rotation& 5ow it is used in designing microwave components& Q7. Derive the S;matrix for a two;hole directional coupler. Q/. Explain, how isolator is used to isolate one component from reflection of other components in the transmission line& Q:. Cncident power for a !3 dD coupler is ')3 M$. =alculate the power in the main arm and in auxiliar arm.

DEPARTMENT OF ELECTRONICS AND COMMUNICATION SB-BIT, MEERUT MICROWAVE ENGINEERING (EEC-603) TUTORIAL-3 (Unit-3)

Q1. $hat is velocit modulation& 5ow is it achieved in a two cavit El stron& Q2. $hat are the limitations of conventional active devices at microwave fre"uenc & Q!. Explain principle of operation of Dac>ward $ave Fscillator. Q#. Explain principle of operation of Magnetron. Q'. Draw a neat diagram of Geflex El stron H explain its wor>ing. * Geflex El stron amplifier operates under the following conditionsI 9o.)339, eJm.1.7):K1311, (.1mm, Gsh.1'EL, fr.:456. The tu%e is oscillating at fr at the pea> of the M.2. 8ind 9r, the Direct current necessar to give a microwave gap voltage of 2339 H M under this condition. Q). Descri%e the construction and wor>ing principle of two cavit El stron amplifiers. Derive an expression for the efficienc of a two cavit El stron amplifier starting from %asic principles. Q7. Explain how a helical travelling wave tu%e achieves amplification& 4ive its mathematical anal sis. Q/. Explain the construction, principle of operation and wor>ing of a T$T.

DEPARTMENT OF ELECTRONICS AND COMMUNICATION SB-BIT, MEERUT MICROWAVE ENGINEERING (EEC-603) TUTORIAL-! (Unit-") Q1. 4ive the general set up of a microwave %ench. Discuss the different parts. Q2. Descri%e a slotted line carriage. Q!. Explain the following microwave power measuring techni"uesI +i0 +ii0 +iii0 Thermocouple detector Dolometer mount techni"ue and =alorimeter wattmeter techni"ue.

Q#. Explain with %loc> diagram the principle of electronic method of fre"uenc measurement. Q'. $rite a short note on measurement of wavelength. Q). $hat do ou mean % 9S$G& Explain an techni"ue for its measurement. Q7. $hat do ou mean % attenuation. insertion loss and attenuation& Descri%e an method for measurement of

Q/. Draw the radiation pattern measurement set up of antenna characteristic. F%tain the radiation pattern of antenna. Q:. $rite a short note on microwave lin> design. Q13. Descri%e the gain measurement of an antenna % direct comparison method.

DEPARTMENT OF ELECTRONICS AND COMMUNICATION SB-BIT, MEERUT MICROWAVE ENGINEERING (EEC-603) TUTORIAL-" (Unit-!) Q1. 4ive the construction and operation of a microwave %ipolar transistor. Q2. Explain the wor>ing of Tunnel diode in %rief. Q!. Descri%e the ph sical structure of N8ET. Explain the principle of its operation along with characteristic curves for a N8ET. Q#. $hat do ou mean % MES8ET& 4ive the construction and explain the operation of MES8ET. Q'. $hat is 4unn effect& 5ow the oscillations are o%tained in 4unn diode& Q). $hat are avalanche transit;time devices& Explain the operation , construction and applications of the following devicesI +a0 CMA*TT +%0 TG*A*TT Q). * TG*A*TT diode has the following specificationI doping concentration Ba.2K131' and current densit , N.23 E*Jcm2. =alculate the avalanche;6one velocit .

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