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Tut Eec 603
Tut Eec 603
Q1. Show that TEM mode cannot exist in the hollow waveguide. Q2. Define dominant mode, degenerate mode, group velocit waveguide. Q!. Derive the field e"uations for TE mode in rectangular waveguide. Q#. $hat do ou mean % microwave cavities& Descri%e the rectangular cavit resonator. Q'. $rite short note on Microstrip Transmission (ine. Q). * TE11 mode is propagating through a circular waveguide. The radius of the guide is ' cm and the guide contains an air dielectric +,-np.1./#10, find fc, 1g and 2g for an operating fre"uenc of !.3 456. Q7. Determine the cut off wavelength for the dominant mode in a rectangular waveguide of %readth 13 cms. 8or a 2.' 456. Signal propagated in this waveguide in the dominant mode, find 1g, 9g and 9p.. Q/. $hat are the various wa s in which the electromagnetic waves can %e coupled to rectangular waveguides & 5ow TE13 mode can %e excited in rectangular waveguide& Q:. Derive the field component present in TM11 mode of propagation in rectangular waveguide and draw its field pattern. Q13. $rite a short note on power loss in a waveguide. and phase velocit in the context of
DEPARTMENT OF ELECTRONICS AND COMMUNICATION SB-BIT, MEERUT MICROWAVE ENGINEERING (EEC-603) TUTORIAL(Unit- )
Q1. Show that the diagonal elements of the s;matrix of a Tee;<unction are not all 6eroes. Q2. =lassif terminators. Explain each of them with relevant figures. Q!. Explain the wor>ing of E;plane Tee. Derive its ?S@ matrix when the main arm is perfectl matched and power A is fed from *uxiliar arm. Q#. Explain the wor>ing of Directional couplers. Define its four coupling parameters. Q'. Explain the wor>ing and applications of a circulator. *re the reciprocal or Bon;reciprocal device& Q). $hat is 8arada rotation& 5ow it is used in designing microwave components& Q7. Derive the S;matrix for a two;hole directional coupler. Q/. Explain, how isolator is used to isolate one component from reflection of other components in the transmission line& Q:. Cncident power for a !3 dD coupler is ')3 M$. =alculate the power in the main arm and in auxiliar arm.
DEPARTMENT OF ELECTRONICS AND COMMUNICATION SB-BIT, MEERUT MICROWAVE ENGINEERING (EEC-603) TUTORIAL-3 (Unit-3)
Q1. $hat is velocit modulation& 5ow is it achieved in a two cavit El stron& Q2. $hat are the limitations of conventional active devices at microwave fre"uenc & Q!. Explain principle of operation of Dac>ward $ave Fscillator. Q#. Explain principle of operation of Magnetron. Q'. Draw a neat diagram of Geflex El stron H explain its wor>ing. * Geflex El stron amplifier operates under the following conditionsI 9o.)339, eJm.1.7):K1311, (.1mm, Gsh.1'EL, fr.:456. The tu%e is oscillating at fr at the pea> of the M.2. 8ind 9r, the Direct current necessar to give a microwave gap voltage of 2339 H M under this condition. Q). Descri%e the construction and wor>ing principle of two cavit El stron amplifiers. Derive an expression for the efficienc of a two cavit El stron amplifier starting from %asic principles. Q7. Explain how a helical travelling wave tu%e achieves amplification& 4ive its mathematical anal sis. Q/. Explain the construction, principle of operation and wor>ing of a T$T.
DEPARTMENT OF ELECTRONICS AND COMMUNICATION SB-BIT, MEERUT MICROWAVE ENGINEERING (EEC-603) TUTORIAL-! (Unit-") Q1. 4ive the general set up of a microwave %ench. Discuss the different parts. Q2. Descri%e a slotted line carriage. Q!. Explain the following microwave power measuring techni"uesI +i0 +ii0 +iii0 Thermocouple detector Dolometer mount techni"ue and =alorimeter wattmeter techni"ue.
Q#. Explain with %loc> diagram the principle of electronic method of fre"uenc measurement. Q'. $rite a short note on measurement of wavelength. Q). $hat do ou mean % 9S$G& Explain an techni"ue for its measurement. Q7. $hat do ou mean % attenuation. insertion loss and attenuation& Descri%e an method for measurement of
Q/. Draw the radiation pattern measurement set up of antenna characteristic. F%tain the radiation pattern of antenna. Q:. $rite a short note on microwave lin> design. Q13. Descri%e the gain measurement of an antenna % direct comparison method.
DEPARTMENT OF ELECTRONICS AND COMMUNICATION SB-BIT, MEERUT MICROWAVE ENGINEERING (EEC-603) TUTORIAL-" (Unit-!) Q1. 4ive the construction and operation of a microwave %ipolar transistor. Q2. Explain the wor>ing of Tunnel diode in %rief. Q!. Descri%e the ph sical structure of N8ET. Explain the principle of its operation along with characteristic curves for a N8ET. Q#. $hat do ou mean % MES8ET& 4ive the construction and explain the operation of MES8ET. Q'. $hat is 4unn effect& 5ow the oscillations are o%tained in 4unn diode& Q). $hat are avalanche transit;time devices& Explain the operation , construction and applications of the following devicesI +a0 CMA*TT +%0 TG*A*TT Q). * TG*A*TT diode has the following specificationI doping concentration Ba.2K131' and current densit , N.23 E*Jcm2. =alculate the avalanche;6one velocit .