FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET

April 2007

FDS6298
30V N-Channel Fast Switching PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

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Features
13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V RDS(ON) = 12 m @ VGS = 4.5 V

Low gate charge (10nC @ VGS=5V) Very low Miller Charge (3nC) Low Rg (1 Ohm) ROHS Compliant

Applications
Control Switch for DC-DC Buck converters Notebook Vcore Telecom / Networking Point of Load

D D SO-8

D D

DD D D

5 6

4 3 2 1

Pin 1 SO-8

G G S S S S S S
TA=25oC unless otherwise noted

7 8

Absolute Maximum Ratings

Symbol
VDSS VGSS ID PD EAS TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
30 20
(Note 1a)

Units
V V A W mJ C

13 50 3.0 1.2 181 55 to +150

Power Dissipation for Single Operation Power Dissipation for Single Operation Single Pulse Avalanche Energy

(Note 1a) (Note 1b) (Note 3)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1b) (Note 1)

50 125 25

C/W C/W C/W

Package Marking and Ordering Information

Device Marking FDS6298 Device FDS6298 Reel Size 13 Tape width 12mm Quantity 2500 units

2007 Fairchild Semiconductor Corporation

FDS6298 Rev. C1 ( W)

FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET

Electrical Characteristics
Symbol
BVDSS BVDSS T J IDSS IGSS VGS(th) VGS(th) T J RDS(ON) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd

TA = 25C unless otherwise noted

Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)

Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 12 A VGS= 10 V, ID = 13 A, TJ=125C VDS = 10 V, ID = 13 A

Min Typ
30 1 0.3 30 1.7 5 7.4 9.4 11 58 1108 310 109 1 11 5 27 7 10 3 3

Max
1 100 3 9 12 15 1.7 20 10 43 14 14 -

Units
V mV/C A nA V mV/C m S pF pF pF ns ns ns ns nC nC nC

Off Characteristics

On Characteristics

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)

Dynamic Characteristics
VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz

Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge

VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6

VDS = 15 V, ID = 13 A, VGS = 5 V

DrainSource Diode Characteristics

VSD trr Qrr
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user' s board design.

DrainSource Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge

VGS = 0 V, IS = 2.1 A

(Note 2)

0.74 27 13

1.2 -

V ns nC

IF = 13 A, dIF/dt = 100 A/s

a)

50C/W when mounted 2 on a 1in pad of 2 oz copper

b) 125C/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper

2. Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Starting TJ = 25C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V

FDS6298 Rev. C1 (W)

FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET

Typical Characteristics

80 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0 0

2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 6.0V 3.5.V 4.5V 4.0V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8
0.5 1 1.5 2 2.5

VGS = 3.0V

3.5V 4.0V 4.5V 5.0V

3.0V

6.0V

10V

10

20

30

40

50

60

70

80

VDS, DRAIN-SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

0.028 RDS(ON), ON-RESISTANCE (OHM)

1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50

ID = 13A VGS = 10V

ID = 6.5A
0.024 0.02 0.016

TA = 125oC
0.012 0.008 0.004 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)

TA = 25oC

-25

25

50

75

100
o

125

150

TJ, JUNCTION TEMPERATURE ( C)

Figure 3. On-Resistance Variation with Temperature.

80 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) VDS = 5V TA = -55oC 125o C 25oC

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

100 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS = 0V TA = 125oC 25oC -55oC

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDS6298 Rev. C1 (W)

FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET

Typical Characteristics

10 VGS, GATE-SOURCE VOLTAGE (V) ID = 13A 8 VDS = 10V 20V 6 15V

1500 CISS 1200 CAPACITANCE (pF) f = 1MHz VGS = 0 V

900

600 COSS 300 CRSS

0 0 4 8 12 16 20 Qg, GATE CHARGE (nC)

0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

100 RDS(ON) LIMIT 100s 1ms 10ms 100ms 1s 10s DC
IAS, AVALANCHE CURRENT (A) 100

Figure 8. Capacitance Characteristics.

ID, DRAIN CURRENT (A)

10

1 VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC

10
25

0.1

125

0.01 0.01

0.1

10

100

1 0.01

0.1

10

100

1000

VDS, DRAIN-SOURCE VOLTAGE (V)

tAV, TIME IN AVALANCHE (mS)

Figure 9. Maximum Safe Operating Area.

Figure 10. Unclamped Inductive Switching Capability

50 P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE R JA = 125C/W TA = 25C

40

30

20

10

0 0.001 0.01 0.1 t1, TIME (sec) 1 10 100

Figure 11. Single Pulse Maximum Power Dissipation.

FDS6298 Rev. C1 (W)

FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET

Typical Characteristics

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

1
D = 0.5 0.2

RJA(t) = r(t) * RJA RJA = 125 C/W

0.1

0.1 0.05 0.02

P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 t1, TIME (sec) 1 10 100 1000

0.01

0.01

SINGLE PULSE

0.001 0.0001

0.001

Figure 12. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDS6298 Rev. C1 (W)

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Rev. I26

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

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2007 Fairchild Semiconductor Corporation

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