UNIT 1: SEMICONDUCTOR DIODES & APPLICATIONS 1.] Flow of electrons is generally termed as _____________. a) electric current b) electric shock c) semiconductor d) none of the above
2.] A _______________ is a material which offers very little resistance to the flow of current through it. a) good conductor b) insulator c) semiconductor d) none of the above
3.] The resistance offered by ______________ is extremely large for the flow of current through it. a) good conductor b) insulator c) semiconductor d) none of the above
4.] The materials which behave like perfect insulators at low temperatures & at higher temperatures, they behave like a good conductors are termed as ________. a) good conductor b) insulator c) semiconductor d) none of the above
5.] The conductivity of a semiconductor _____________ with temperature. a) increases b) decreases c) cant say d) none of the above
6.] The conductivity of a good conductor _____________ with temperature. a) increases b) decreases c) cant say d) none of the above
7.] The resistance of a semiconductor _____________ with temperature. a) increases b) decreases c) cant say d) none of the above
8.] The resistance of a good conductor _____________ with temperature. a) increases b) decreases c) cant say d) none of the above
9.] The charge of an electron is ___________________. a) 1.602*10 +27 Coulomb b) 1.602*10 -27 Coulomb c) 1.602*10 +19 Coulomb d) 1.602*10 -19 Coulomb
10.] The total number of electrons in an atom depends upon ____________. a) the atomic mass b) the atomic weight c) the atomic number d) the atomic size BASIC ELECTRONICS
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11.] In any atom, the number of electrons in the last orbit (i.e., the outermost orbit or the valence orbit) is limited to ________________. a) 4 b) 8 c) 10 d) 12
12.] In any atom, the outermost orbit is called ______________. a) valence orbit b) energy band c) conduction band d) forbidden band
13.] The electrons present in the valence orbit are termed as _______________. a) valence electrons b) free electrons c) cant say d) none of the above
14.] The range of energies possessed by the electrons of any one orbit of all atoms is referred as _____________________. a) valence band b) energy band c) conduction band d) forbidden band
15.] The energy band in relation to valence electrons is termed as ___________. a) valence band b) energy band c) conduction band d) forbidden band
16.] Electrons which are removed from the valence orbits of atoms, which are freely available for conduction, are termed as __________________. a) valence electrons b) free electrons c) cant say d) none of the above
17.] The range of energies possessed by the free electrons is termed as ______. a) valence band b) energy band c) conduction band d) forbidden band
18.] The void (or gap) separating conduction band and valence band, and no electron can exist in this void is termed as ______________. a) valence band b) energy band c) conduction band d) forbidden band
19.] In a metal, the number of valence electrons is ___________. a) less than 4 b) equal to 4 c) greater than 4 d) equal to 8
20.] In a semiconductor material, the number of valence electrons is ___________. a) less than 4 b) equal to 4 c) greater than 4 d) equal to 8
21.] In an insulator , the number of valence electrons is ___________. a) less than 4 b) equal to 4 BASIC ELECTRONICS
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c) greater than 4 d) equal to 8
22.] The current which results in a semiconductor material due to the movement of holes is termed as ___________________. a) hole current b) electron current c) negative current d) none of the above
23.] A semiconductor in its pure form is termed as __________________. a) intrinsic semiconductor b) extrinsic semiconductor c) p-type semiconductor d) n-type semiconductor
24.] The process of adding impurity to a pure semiconductor material, in order to increase its conductivity is called as __________________. a) dancing b) doping c) creating holes d) creating electrons
25.] A semiconductor to which an impurity is added with view to increase its conductivity is termed as __________________. a) intrinsic semiconductor b) extrinsic semiconductor c) p-type semiconductor d) n-type semiconductor
26.] If a pentavalent impurity like arsenic or antimony or phosphorus is added to pure germanium or silicon, a _____________________ results. a) intrinsic semiconductor b) extrinsic semiconductor c) p-type semiconductor d) n-type semiconductor
27.] In a n-type semiconductor material electrons are ________________. a) majority charge carriers b) minority charge carriers c) donor atoms d) acceptor atoms
28.] In a n-type semiconductor material holes are ________________. a) majority charge carriers b) minority charge carriers c) donor atoms d) acceptor atoms
29.] The pentavalent impurity atom, like arsenic, added to pure germanium material is termed as ____________. a) majority charge carriers b) minority charge carriers c) donor atoms d) acceptor atoms
30.] If a trivalent impurity like gallium or indium or aluminium is added to pure germanium or silicon, a _____________________ results. a) intrinsic semiconductor b) extrinsic semiconductor c) p-type semiconductor d) n-type semiconductor
31.] In a p-type semiconductor material holes are ________________. a) majority charge carriers b) minority charge carriers c) donor atoms d) acceptor atoms
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32.] In a p-type semiconductor material electrons are ________________. a) majority charge carriers b) minority charge carriers c) donor atoms d) acceptor atoms
33.] The trivalent impurity atom, like gallium, added to pure germanium material is termed as ____________. a) majority charge carriers b) minority charge carriers c) donor atoms d) acceptor atoms
34.] In extrinsic semiconductors, conduction of current is due to ____________. a) electrons only b) holes only c) both electrons and holes d) neither electrons nor holes
35.] Doping an intrinsic semiconductor with pentavalent impurity atom __________________. a) raises the Fermi level b) lowers the Fermi level c) do not affect the Fermi level d) none of the above
36.] Doping an intrinsic semiconductor with trivalent impurity atom __________. a) raises the Fermi level b) lowers the Fermi level c) do not affect the Fermi level d) none of the above
37.] In a pure semiconductor, the Fermi level lies _____________ of the forbidden energy gap. a) exactly in the middle b) at the lower part c) at the upper part d) none of the above
38.] In a p-n junction, the potential built across the junction, after diffusion has stopped, is termed as _______________. a) barrier potential b) developed potential c) p-n potential d) none of the above
39.] The barrier potential is about ______________ of germanium. a) 0.1V b) 0.3V c) 0.7V d) 1.5V
40.] The barrier potential is about ______________ of silicon. a) 0.1V b) 0.3V c) 0.7V d) 1.5V
41.] If an external voltage is applied across the p-n junction such that it neutralizes the barrier potential and causes conduction through the junction, the p- n junction is said to be ______________. a) forward biased b) reverse biased c) un-biased d) no-biased
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42.] If an external voltage is applied across the p-n junction such that the depletion layer widens and the barrier potential increases, the p-n junction is said to be ______________. a) forward biased b) reverse biased c) un-biased d) no-biased
43.] A p-n junction conducts when it is _________________. a) forward biased b) reverse biased c) un-biased d) no-biased
44.] A p-n junction blocks conduction when it is ________________. a) forward biased b) reverse biased c) un-biased d) no-biased
45.] The direction of conventional current is always ____________ to the direction of drifting electrons. a) same b) opposite c) cant say d) none of the above
46.] The slope of DC load line is _______________. a) 1/I L b) 1/V L
c) 1/R L d) 1/I f
47.] The I av for a half-wave rectifier is _____________. a) I m / b) I m /2 c) 2I m / d) I m /2
48.] The I RMS for a half-wave rectifier is ______________. a) I m / b) I m /2 c) 2I m / d) I m /2
49.] The I av for a full-wave rectifier is _____________. a) I m / b) I m /2 c) 2I m / d) I m /2
50.] The I RMS for a full-wave rectifier is _____________. a) I m / b) I m /2 c) 2I m / d) I m /2
51.] The efficiency of a half-wave rectifier is _____________. a) 40.6% b) 81.2% c) 0.483% d) 1.21%
52.] The efficiency of a full-wave rectifier is _____________. a) 40.6% b) 81.2% c) 0.483% d) 1.21%
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53.] The ripple factor of a half-wave rectifier is _____________. a) 40.6 b) 81.2 c) 0.483 d) 1.21
54.] The ripple factor of a full-wave rectifier is _____________. a) 40.6 b) 81.2 c) 0.483 d) 1.21
55.] An inductor ___________ to pass through it. a) allows DC b) blocks DC c) allows AC d) blocks AC
56.] A capacitor ___________ to pass through it. a) allows DC b) blocks DC c) allows AC d) blocks AC
57.] The switch off time of diodes is longer due to _______________. a) the diffusion capacitance b) the forward bias c) the reverse bias d) none of the above
UNIT 2 & 3: TRANSISTORS & BIASING METHODS 1.] The direction of arrow head placed on the emitter of a transistor represents ________________. a) the direction of motion of holes b) the direction of motion of electrons c) both (a) and (b) d) none of the above
2.] The direction of flow of electrons is ____________ to the direction of motion of holes. a) same as b) opposite c) parallel d) perpendicular
3.] During normal working of transistor as amplifier, the emitter diode is ______________. a) unbiased b) forward biased c) reverse biased d) none of the above
4.] During normal working of transistor as amplifier, the collector diode is ______________. a) unbiased b) forward biased c) reverse biased d) none of the above
5.] The reverse current which results in a transistor due to minority charge carriers across the collector-to-base junction is called as ________________. a) base current b) emitter current BASIC ELECTRONICS
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c) collector current d) collector-to-base leakage current
6.] A transistor can be visualized as a ___________ port network. a) one b) two c) three d) four
7.] Varying the input current by varying the input voltage at constant output voltage is _____________________. a) static input characteristics b) static output characteristics c) transistor i/o characteristics d) none of the above
8.] Varying the output current by varying the output voltage at constant input current is _____________________. a) static input characteristics b) static output characteristics c) transistor i/o characteristics d) none of the above
9.] The ratio of change in collector current to the change in emitter current at constant collector to base voltage is ___________. a) b) c) d)
10.] The ratio of change in collector current to the change in base current at constant collector to emitter voltage is ___________. a) b) c) d)
11.] The ratio of change in emitter current to the change in base is ___________. a) b) c) d)
12.] A ______________ circuit has a very high input resistance and very low output resistance. a) common base b) common emitter c) common collector d) none of the above
13.] In the saturation region, the emitter-base & collector-base junctions are _________________ biased. a) forward b) reverse c) unbiased d) none of these
14.] In the cut-off region, the emitter-base & collector-base junctions are _________________ biased. a) forward b) reverse c) unbiased d) none of these
15.] The intersection of DC load line and the output characteristics of a transistor is called _____________________. a) Q Point b) quiescent Point BASIC ELECTRONICS
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c) operating Point d) all of these
16.] The biasing circuit which gives most stable operating point is _________. a) base bias b) collector-to-base bias c) voltage-divider bias d) none of these
17.] The collector-to-base bias circuit is also known as _______________. a) base bias b) voltage-divider bias c) voltage feedback bias circuit d) none of these
18.] The reverse saturation current doubles for every _________ 0 C rise in temperature. a) 40 b) 30 c) 20 d) 10
19.] The reverse saturation current __________ for every 10 0 C rise in temperature. a) doubles b) triples c) quadruples d) none of these
20.] I CBO doubles for every _________ 0 C rise in temperature. a) 40 b) 30 c) 20 d) 10
21.] I CBO __________ for every 10 0 C rise in temperature. a) doubles b) triples c) quadruples d) none of these
22.] The stability factor S is the rate change of _____________ current with respect to reverse saturation current. a) emitter b) base c) collector d) none of these
23.] is the ratio of change in __________ current to the change in emitter current at constant collector to base voltage. a) emitter b) base c) collector d) none of these
24.] is the ratio of change in __________ current to the change in base current at constant collector to emitter voltage. a) emitter b) base c) collector d) none of these
25.] is the ratio of change in __________ current to the change in base current. a) emitter b) base c) collector d) none of these BASIC ELECTRONICS
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26.] is the ratio of change in collector current to the change in _________ current at constant collector to base voltage. a) emitter b) base c) collector d) none of these
27.] is the ratio of change in collector current to the change in _________ current at constant collector to emitter voltage. a) emitter b) base c) collector d) none of these
28.] is the ratio of change in emitter current to the change in _________ current. a) emitter b) base c) collector d) none of these
29.] The emitter area in a transistor is considerably __________ than the collector area. a) smaller b) greater c) smaller or greater d) none of these
30.] The collector area is slightly _________ doped than the emitter. a) more b) less c) more or less d) none of these
31.] The depletion layer width at the collector junction is _________ than the depletion layer width at the emitter junction. a) more b) less c) more or less d) none of these
32.] In a transistor, the emitter area is _________ doped. a) heavily b) lightly c) moderately d) none of these
33.] In a transistor, the base region is _________ doped. a) heavily b) lightly c) moderately d) none of these
34.] In a transistor, the collector area is _________ doped. a) heavily b) lightly c) moderately d) none of these
35.] In a transistor, the depletion layer penetrates deeply into the __________ region. a) base b) emitter c) collector d) none of these
36.] In a ______________, the current is mainly due to electrons. BASIC ELECTRONICS
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a) PNP transistor b) NPN transistor c) BJT transistor d) UJT transistor
37.] In a ______________, the current is mainly due to holes. a) PNP transistor b) NPN transistor c) BJT transistor d) UJT transistor
38.] In CB configuration, when reverse bias voltage V CB increases, the width of the depletion region also increases, which reduces the electrical base width. This effect is called as _________________. a) early effect b) base width modulation c) (a) or (b) d) none of these
39.] In CB configuration, when reverse bias voltage V CB increases above the V CB max , increase in depletion region is such that it penetrates into base until it makes contact with emitter-base depletion region. This condition is called _______. a) punch-through effect b) reach-through effect c) (a) or (b) d) none of these
40.] The collector-to-base bias provides __________ stability than the base bias circuit. a) more b) less c) more or less d) none of these
41.] The voltage divider bias provides the _______ stability against h FE variations. a) least b) greatest c) more or less d) none of these
UNIT 5: AMPLIFIERS & OSCILLATORS 1.] Audio amplifiers can amplify signals of frequencies which lie in the range of _____________. a) 20Hz to 20KHz b) 20Hz to 20MHz c) 20Hz to 200KHz d) 20Hz to 200MHz
2.] In a _________ amplifier, the collector current flows throughout the input signal cycle. a) class A b) class B c) class C d) class AB
3.] In a __________ amplifier, the collector current flows only during the positive half cycles of the input signal. a) class A b) class B c) class C d) class AB
4.] In a ____________ amplifier, the collector current flows for less than half of the period of the input signal. BASIC ELECTRONICS
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a) class A b) class B c) class C d) class AB
5.] In a ____________ amplifier, the collector current flows for more than half of the input signal period, but not throughout the full cycle. a) class A b) class B c) class C d) class AB
6.] The coupling capacitor, C C , in a R-C coupled amplifier is used to _________. a) bypass the output to ground b) couple the output to next stage c) bypass the emitter current d) couple the emitter current to next stage
7.] The range of frequencies in which the amplifier gain is either equal to greater than 70.7% of the maximum gain is called as _______________. a) channel-width b) frequency-width c) band-width d) none of these
8.] The range of frequencies at the limits of which, the voltage gain falls by 3dB is called as _______________. a) channel-width b) frequency-width c) band-width d) none of these
9.] In a common-emitter amplifier, there is a phase shift of _________ between input and output voltages. a) 90 0 b) 180 0
c) 360 0 d) 0 0
10.] When the phase of the feedback signal is same as that of the input, then it is called ______________. a) positive feedback b) negative feedback c) no feedback d) none of these
11.] When the phase of the feedback signal is out of phase with that of the input, then it is called ______________. a) positive feedback b) negative feedback c) no feedback d) none of these
12.] Tank circuit comprises of _____________. a) an inductor in parallel with a capacitor b) an inductor in series with a capacitor c) an inductor in parallel with a resistor d) an inductor in series with a resistor
13.] R-C oscillators are usually used in ___________ range. a) audio frequency b) radio frequency c) video frequency d) ultra high frequency
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UNIT 6: OPERATIONAL AMPLIFIERS 1.] The characteristics of ______________ changes with application of external voltage. a) an active element b) a passive element c) both (a) and (b) d) neither (a) nor (b)
2.] The characteristics of ______________ will not change on application of external voltage. a) an active element b) a passive element c) both (a) and (b) d) neither (a) nor (b)
3.] In _____________, the outputs are proportional to inputs. a) digital ICs b) linear ICs c) both (a) and (b) d) neither (a) nor (b)
4.] In a _____________, the inputs and outputs can take only two values; 0 and 1. a) digital ICs b) linear ICs c) both (a) and (b) d) neither (a) nor (b)
5.] The voltage gain of an ideal Op-Amp is _____________. a) infinity b) zero c) very high d) very low
6.] The input impedance of an ideal Op-Amp is _____________. a) infinity b) zero c) very high d) very low
7.] The output impedance of an ideal Op-Amp is _____________. a) infinity b) zero c) very high d) very low
8.] The bandwidth of an ideal Op-Amp is _____________. a) infinity b) zero c) very high d) very low
9.] When equal voltages are applied to two input terminals of an ideal Op-Amp, the output is ____________. a) infinity b) zero BASIC ELECTRONICS
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c) very high d) very low
10.] The voltage gain of a practical Op-Amp is _____________. a) infinity b) zero c) very high d) very low
11.] The input impedance of a practical Op-Amp is _____________. a) infinity b) zero c) very high d) very low
12.] The output impedance of a practical Op-Amp is _____________. a) infinity b) zero c) very high d) very low
13.] When equal voltages are applied to two input terminals of a practical Op- Amp, the output is ____________. a) infinity b) zero c) very high d) very low
14.] The ratio of the differential gain of an Op-Amp to its common mode gain is ______________. a) PSRR b) input off-set current c) output off-set current d) CMRR
15.] In a practical Op-Amp, there will be a small output voltage even when the inputs are zero. This is called _____________. a) output off-set current b) output off-set voltage c) input off-set current d) input off-set voltage
16.] The DC voltage which makes the output off-set voltage zero, when the other terminal is zero is called _____________. a) output off-set current b) output off-set voltage c) input off-set current d) input off-set voltage
17.] The maximum rate at which the Op-Amp output can change is ___________. a) run rate b) ratio rate c) slew rate d) none of these
18.] Slew rate is expressed in terms of ______________. BASIC ELECTRONICS
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a) volts/s b) volts-s c) s/volts d) s-volts
19.] The time period for which the trace remains on a fluorescent screen after the applied signal becomes zero is known as ____________. a) existence b) shadow c) persistence d) trace
20.] The time-base generator in a CRO is used to generate _______________. a) the saw-tooth voltage b) the square wave c) the DC voltage d) the AC voltage
21.] When the input is applied to the inverting input terminal of an Op-Amp, then the output is ______________ with the input. a) 90 0 out of phase b) 180 0 out of phase c) 360 0 out of phase d) in phase
22.] When the input is applied to the non-inverting input terminal of an Op-Amp, then the output is ______________ with the input. a) 90 0 out of phase b) 180 0 out of phase c) 360 0 out of phase d) in phase
UNIT 7: COMMUNICATION SYSTEMS & NUMBER SYSTEMS 1.] If the amplitude of the carrier wave is altered in accordance with the strength of the modulating signal, then it is _________________. a) amplitude modulation b) frequency modulation c) amplitude communication d) frequency communication
2.] If the frequency of the carrier wave is altered in accordance with the strength of the modulating signal, then it is _________________. a) amplitude modulation b) frequency modulation c) amplitude communication d) frequency communication
3.] The process of getting back the modulating signal from the modulated wave is _________________. a) modulation b) re-modulation c) demodulation d) none of these
4.] The modulation index m for amplitude modulation is _____________. a) V c /V m b) V c * V m
c) V m + V c d) V m /V c
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5.] The modulation index m f for frequency modulation is _____________. a) f/f m b) f * f m c) f - f m d) f m /f
6.] Usually, the intermediate frequency is _______________. a) 455 MHz b) 455 KHz c) 455 Hz d) 455 GHz
9.] The decimal equivalent of binary number 1110 is ________________. a) 15 b) 16 c) 18 d) 14
10.] 11011 2 = X 10 , then a) X = 27 b) X = 37 c) X = 17 d) X = 12
11.] The 1s compliment of 1110 is __________. a) 1111 b) 0001 c) 0010 c) 0000
12.] The 2s compliment of 1110 is ____________. a) 1111 b) 0001 c) 0010 d) 0000 13.] If 47 10 = X 8 , then a) X = 37 b) X = 27 c) X = 74 d) X = 57
14.] The octal equivalent of 001001011011 (2) is _________________. a) 3311 (8) b) 3113 (8)
c) 1133 (8) d) 1331 (8)
15.] If 11021110 2 = X 16 , then a) X = AB b) X = CD c) X = EF d) X = DE
16.] If 58 10 = X BCD , then a) X = 01011000 b) X = 01010001 c) X = 10101000 c) 10100001
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UNIT 8: DIGITAL ELECTRONICS 1.] The OR operation implies ______________. a) boolean addition b) boolean multiplication c) Boolean subtraction d) boolean division
2.] The AND operation implies ______________. a) boolean addition b) boolean multiplication c) Boolean subtraction d) boolean division
3.] The output of a NAND gate is ___________, when all the inputs are high. a) low b) high c) low or high d) none of these
4.] The output of a NOR gate is ___________, when all the inputs are low. a) low b) high c) low or high d) none of these
5.] A bubbled AND gate and a _____________ are equivalent. a) XOR gate b) XNOR gate c) NOR gate d) NAND gate
6.] A bubbled OR gate and a _____________ are equivalent. a) XOR gate b) XNOR gate c) NOR gate d) NAND gate