MOSFETs: Drain Voltage

Effects on Channel Current

Prof. Paul Hasler
Origin of Drain Dependencies
Increasing Vd effects
the drain-to-channel
region:
increases depletion
width
increases barrier
height
Drain Characteristics
Current versus Drain Voltage
Current versus Drain Voltage
Current versus Drain Voltage
Not flat due to Early effect
(channel length modulation)
Current versus Drain Voltage
Not flat due to Early effect
(channel length modulation)
In BJTs --- Base Modulation Effects
Current versus Drain Voltage
Not flat due to Early effect
(channel length modulation)
I
d
= I
d
(sat) (1 + (V
d
/V
A
) )
or
I
d
= I
d
(sat) e
Vd/VA
In BJTs --- Base Modulation Effects
Current versus Drain Voltage
Not flat due to Early effect
(channel length modulation)
I
d
= I
d
(sat) (1 + (V
d
/V
A
) )
or
I
d
= I
d
(sat) e
Vd/VA
R
out

I
d
(sat)
GND
I
out

In BJTs --- Base Modulation Effects
Early Voltage Length Dependence
Width of depletion region
depends on doping, not L
Might expect Vo to linearly
vary with L
Full Range of Effects
0
1
2
3
4
5
6
7
0 1 2 3 4 5 6 7 8 9 10
1
10
100
Punchthrough
C
u
r
r
e
n
t

(
n
A
)

C
u
r
r
e
n
t

(
n
A
)

Voltage (V)
Exp model
Slow / Exponential Increase:
Channel Modulation /
DIBL Effect
Other (faster) effects:

Punchthrough --- depletion
regions converge

Avalanche Breakdown ---
impact ionization
(Punchthrough voltage = 2 * V
A
)
V
A
= 5V
Cause of DIBL
Drain Induced Barrier Lowering
Data taken from a popular
1.2mm MOSIS process
Data taken from a popular
2.0mm MOSIS process
Different Manifestations of DIBL
Different Manifestations of DIBL
Drain Voltage Effects
Channel Length Modulation / Early Effect
Exponential Modeling
Drain Induced Barrier Lowering (DIBL):
Source of Exponential I-V dependence
Punchthrough: Highest Drain-Source
voltage available