Silica Aerogel Thin Films

Part II

By
Anil S. Gaikwad

Content

Introduction
Aerogel
Motivation

Miniaturization

First computer 1948

First transistor

Transistor based
computer 1948

First IC 1958

First PC 1958

Intel pro

IC

Intel 4004

The functionality of IC as measured by number of transistors and bits doubles every 1.5 to 2 years

IC

Why Low-k Material ?

To reduce cross talk

To reduce the RC delay
To lower the power consumption

Approach Towards Silica

Aerogel Thin Films
ITRS 2011

Low-k Materials.
Material Classification
Inorganic
Inorganic/Organic Hybrid

Organic

Porous

Air gaps/bridges

k value

Deposition
Method

Fluorinated glass (SiOF)

2.8

CVD

Hydrogen silesquioxane (HSQ)

2.9

SOD

Si-O-C polymers (e.g. MSQ)

2.0

SOD

Poly(arylene ether) PAE

2.6

SOD

Polyimides / Flourinated

2.9 / 2.3

SOD

Parylene-N / Parylene-F

2.7 / 2.4

CVD

2.6

SOD

DLC-Diamond-like Carbon /
Fourinated

2.7 / 2.4

CVD

Amorphous C / Flourinated

2.0

CVD

PTFE (Teflon)

1.9

SOD

Porous MSQ

1.8

SOD

Porous PAE

1.8

SOD

Porous SiLK

1.5

SOD

Porous SiO2

1.1

SOD

1.0

???

Material

B-stage polymers

Approach Towards Silica

Aerogel Thin Films

Aerogel
It is synthetic porous ultralight material derived from gel, in which the liquid
component of the gel has been replaced by gas. The result is a solid with
extremely low density, dielectric constant & thermal conductivity.
Aerogel was first created by
Samuel Stephen Kistler in 1931.

Properties of Aerogel