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LIST OF EXPERIMENTS

1. Verification of KVL and KCL


M.A.M SCHOOL OF ENGINEERING

Siruganur, Trichy-621105
DEPARTMENT OF ELECTRONICS AND COMMUNICATION
ENGINEERING
LAB MANUAL

2. Verification of Thevenin and Norton Theorems.


3. Verification of superposition Theorem.
4. Frequency response of series and parallel resonance circuits
5. Verification of Maximum power transfer and reciprocity
theorems.
6. Characteristics of PN and Zener diode

Subject Code: EC2155


Subject Name: CIRCUITS AND DEVICES LAB
Year/Sem: I/II ECE

7. Characteristics of CE configuration
8. Characteristics of CB configuration
9. Characteristics of UJT and SCR
10. Characteristics of JFET and MOSFET
11. Characteristics of DIAC and TRIAC.
12. Characteristics of Photodiode and Phototransistor.

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EC2155-CIRCUITS AND DEVICES LAB

1.VERIFICATION OF KVL & KCL


AIM:
To verify (i) kirchoffs current law (ii) kirchoffs voltage law
(i)

KIRCHOFFS CURRENT LAW:

store destroy (or) generate charge. Hence the current must sum to zero. A
hydraulic analog sum is zero. For example consider three water pipes joined
pn the shape of Y. we defined free currents as following into each of 3
pipes. If we insists that what is always
CIRCUIT DIAGRAM:
1. Kirchhoffs current law:

COMPONENTS REQUIRED:

Kirchoff`s current law

Sl.No components

Range

(0-15)V

RPS

Quantity

1.0k

3.3k

1
5V

Resistor

1 K

Ammeter

(0-10)mA

Bread board

------

Connecting
wires

------

few

Practical measurement:
(0-20)mA
1.0k

5V

THEORY:
krichoffs current law:
The algebraic sum of the currents entering in any node is Zero.
The law represents the mathematical statement of the fact change cannot
accumulate at a node. A node is not a circuit element and it certainly cannot
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EC2155-CIRCUITS AND DEVICES LAB

4.7 K

(0-10)mA
3.3k

4.7 K
+

A
-

(0-10)mA

ii) KIRCHOFFS VOLTAGE LAW:


TABULATION:
COMPONENTS REQUIRED:
Voltage

Total current
I(mA)

I1(mA)

I2(mA)
Sl.No

components

Range

Quantity

RPS

(0-15)V

Resistor

1K,2.2K,3.3K

voltmeter

(0-20)V

Bread board

------

Connecting wires

------

few

1
Each 1

PROCEDURE:

1.
2.
3.
4.
5.
6.

Connections are made as per the circuit diagram.


Check your connections before switch on the supply.
Vary the regulated supply.
Measure the current using ammeter.
Note the readings in the tabulation.
Compare the observation reading to theoretical value.

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EC2155-CIRCUITS AND DEVICES LAB

THEORY:

(i) Kirchhoffs voltage law


The algebraic sum of the voltage around any closed path is zero.
The law represents the mathematical statement of the fact change cannot
accumulate at a node. A node is not a circuit element and it certainly cannot
store destroy (or) generate charge. Hence the current must sum to zero. A
hydraulic analog sum is zero. For example consider three water pipes joined
pn the shape of Y. we defined free currents as following into each of 3
pipes. If we insists that what is always

CIRCUIT DIAGRAM:

TABULATION:

Krichoffs voltage law:


Voltage

Kirchoff`s voltage law

(V)
1.0k

V1

3.3k

2.7k

V2

V3

V1
(volts)

V2
(volts)

5V

Practical measurement:

Practical measurement
1.0k

+
5V

V
(0-5)V

3.3k

(0-5)V

PROCEDURE:

2.7k

(0-5)V

1. Connections are made as per the circuit diagram.


2. Check your connections before switch on the supply.
3. Vary the regulated supply.
4. Measure the voltage using voltmeter.
5. Note the readings in the tabulation.
6. Compare the observation reading to theoretical value.
RESULT:

Thus the Kirchhoffs current law and voltage law were verified.
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EC2155-CIRCUITS AND DEVICES LAB

V3
(volts)

2.VERIFICATION OF THEVENINS THEOREM


AIM:
To verify Thevenins theorem and to find the current flowing through the load
resistance.

Thevenin`s voltage. It is the voltage between the terminals on open circuit


condition, Hence it is called open circuit voltage denoted by V oc. Zth is
called Thevennin`s impedance. It is the driving point impedance at the
terminals when all internal sources are set to zero too.
If a load impedance ZL is connected across output terminals, we can
find the current through it IL = Vth/ (Zth + ZL).

COMPONENTS REQUIRED:

CIRCUIT DIAGRAM:
Sl.No

components

RPS

Resistor

Range

Quantity

(0-15)V

1K,2.2K,3.3K

Each 1

2,7K
3

Ammeter

(0-5)mA

voltmeter

(0-5)V

Bread board

------

Connecting wires

------

few

THEORY:
Thevenin`s theorem:

Any linear active network with output terminals can be replaced by


a single voltage source Vth in series with a single impedance Zth. Vth is the
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EC2155-CIRCUITS AND DEVICES LAB

EQUVALENT CIRCUIT:

PROCEDURE:

1.
2.
3.
4.
5.
6.
7.
8.
9.

Connections are made as per the circuit diagram.


Check your connections before switch on the supply.
Find the Thevenins voltage (or) open circuit voltage.
Replace voltage source by internal resistor.
Determine the Thevenins resistance.
Find IL by using Thevenins formula.
Compare the observation reading to theoretical value.
switch off the supply
Disconnect the circuit.

TABULATION:

Vth

Rth

IL(mA)

theoretical practical theoretical practical theoretical practical


RESULT:

Thus the Thevenins theorem was verified.


Theoretical:
Vth =
Rth =
IL =

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EC2155-CIRCUITS AND DEVICES LAB

Practical:
Vth =
Rth =
IL =

VERIFICATION OF NORTONS THEOREM

Nortons theorem:
AIM:

To verify Nortons theorem and to determine the current flow through


the load resistance.

Any linear active network with output terminals can be replaced by a


single current source. Isc in parallel with a single impedance Zth. Isc is the
current through the terminals of the active network when shorted. Zth is
called Thevennin`s impedance.
Current through RL= Isc Zth/( Zth+ZL)

COMPONENTS REQUIRED:

Sl.No

Components

Range

Quantity

CIRCUIT DIAGRAM:
Norton

To find I sc

10K

10K

8K

8K
I

+ sc
4.7K

5V

RPS

(0-15)V

Resistor

10K,5.6K,8.2K

5.6K

5V

To find IL

XMM1
To find R th

Ammeter

(0-10)mA,mc

10K

10K

8K

Bread board

------

Connecting wires

------

few

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EC2155-CIRCUITS AND DEVICES LAB

4.7K

8K

R th
5V

(0-5)mc,mc

(0-500)mA

Each 1

6K
3

4.7K

4.7K

5.6K

(0-500)mA

Norton`s Equivalent circuit

RL =5.6K

Rth

I sc

(0-500)mA

TABULATION:

PROCEDURE:

Theoretical

Isc

Practical

Rth

Isc

Rth

1.
2.
3.
4.
5.
6.
7.
8.

Connections are made as per the circuit diagram.


Check your connections before switch on the supply.
Find the Nortons current (or) short circuit current in load resistance.
Replace voltage source by internal resistor.
Determine the equivalents resistance.
Find IL by using Nortons formula.
Compare the observation reading to theoretical value.
switch off the supply
9. Disconnect the circuit .
RESULT:

Thus the Nortons theorem was verified.


Theoretical:
Isc =
Rth =
IL =
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EC2155-CIRCUITS AND DEVICES LAB

Practical:
Isc =
Rth =
IL =

3. SUPER POSITION THEOREM

CIRCUIT DIAGRAM:

AIM:

To find I 1 when 12V source is acting alone


220 ohm

To verify superposition theorem and determine the current following


through the load resistance.
COMPONENTS REQUIRED:

Sl.No

Components

12V

Range

RPS

(0-15)V

Resistor

1K,220,470

Ammeter

(0-1)mA,mc

(0-5)mA mc

Bread board
Connecting wires

-----------

1
Each 1

470 ohm

12V

1K

TO find I 2 When 10V source is acting alone


220 ohm

few

TABULATION:

470 ohm

10 V

12V

1K

+
(0-20)mA

220 ohm

10 V

(0-20)mA

To find I when two sources are acting

470 ohm

1K

In a linear circuit containing more than one source, the current that
flows at any point or the voltage that exists between any two points is the
algebraic sum of the currents or the voltages that would have been produced
by each source taken separately with all other sources removed.

EC2155-CIRCUITS AND DEVICES LAB

10 V

1K

Superposition theorem

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220 ohm

Quantity

470 ohm

(0-20)mA

V(volt)

I1(mA)

V
1

theoretic
al

V
2

I2(mA)

practic
al

theoretic
al

I(mA)

practic
al

theoretic
al

practic
al

2. Check your connections before switch on the supply.


3. Determine the current through the load resistance.
4. Now one of the sources is shorted and the current flowing through the
resistance IL measured by ammeter.
5. Similarly, the other source is shorted and the current flowing through
the resistance IL measured by ammeter.
6. Compare the value obtained with the sum of I 1&I2 should equal to I
7. Compare the observation reading to theoretical value.
8. switch off the supply
9. Disconnect the circuit.

RESULT:

Thus the superposition theorem was verified.

PROCEDURE:

1. Connections are made as per the circuit diagram.


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EC2155-CIRCUITS AND DEVICES LAB

4. FREQUENCY RESPONSE OF SERIES AND PARALLEL RESONANCE


CIRCUIT

AIM:

Series resonance

To obtain the resonance frequency of the given RLC series electrical


network.

1.0uF

COMPONENTS REQUIRED:

Sl.No

Fn. gen

Components

Range

50 mH
L
R 1.0k

Quantity
TABULATION:
FREQUENCY (HZ)

Function generator

0-2MHz,0-3MHZ

Resistor

1K,

Voltmeter

(0-5) V

capacitor

1F

Bread board

-----

Connecting wires

------

Few

Decade inductance box

(0-100)mH

FORMULA USED:Series resonance frequency F=1/ (2 (LC))

CIRCUIT DIAGRAM

CIRCUIT DIAGRAM:

Parallel resonance

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EC2155-CIRCUITS AND DEVICES LAB

VR(VOLT)

(0-5)V

Fn. gen

(0-5)V

1.0k

C
1.0uF

L
50 mH

RESULT:

TABULATION:
FREQUENCY (HZ)

2. Vary the frequency of the function generator from 50 Hz to 20


KHz.
3. Measure the corresponding value of voltage across the resistor R
for series RLC circuit.
4. Repeat the same procedure for different values of frequency.
5. Tabulate your observation.
6. Note down the resonance frequency from the graph.

VR(VOLT)

Thus the resonance frequency of series RLC circuit is obtained.


Practical value

Theoretical value =
Thus the resonance frequency of Parallel RLC circuit is obtained.
Practical value

Theoretical value =

PROCEDURE:

1. Connections are made as per the circuit diagram.


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EC2155-CIRCUITS AND DEVICES LAB

5. VERIFICATION OF MAXIMUM POWER TRANSFER THEOREM


AIM:

To find the value of resistance RL in which maximum power is


transferred to the load resistance.
COMPONENTS REQUIRED:

Maximum power transfer to the load resistor occurs when it has a value
equal to the resistance of the network looking back at it from the load
terminals.
CIRCUIT DIAGRAM:

Sl.No

Components

Range

Quantity
Theoretical calculation

(0-10)mA
1.0k

Resistor

1K,2.2 K

Ammeter

(0-10) mA

Bread board

-----

Connecting wires

------

Few

RPS

(0-30)V

DRB

(0-10)K

MODEL GRAPH:

Maximum power transfer theorem:


TABULATION:

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EC2155-CIRCUITS AND DEVICES LAB

To find R th

1.0k

1
5V

2.2k

RL

2.2k

R th

2. By giving various values of the resistance in DRB, note the ammeter


Resistance (RL)

Current I(mA)

Power =I2RL

Reading.
3. Calculate the power and plot the power Vs resistance graph.
4. Note the maximum power point corresponding resistance from the graph.

RESULT:

Thus the value of unknown resistance in which the maximum power


is transferred to the load was found.

Theoretical load resistance

Practical load resistance

Maximum power

VERIFICATION OF RECIPROCITY THEOREM


PROCEDURE:

1. Connections are given as per the circuit diagram.


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EC2155-CIRCUITS AND DEVICES LAB

AIM:

To verify Reciprocity theorem and to determine the current flow through


the load resistance.
COMPONENTS REQUIRED:

Sl.No

Components

Range

RPS

(0-15)V

Resistor

100,470,

Quantity

In a linear, bilateral network a voltage source V volt in a branch


gives rise to a current I, in another branch. If V is applied in the second
branch the current in the first branch will be I. This V/I are called transfer
impedance or resistance. On changing the voltage source from 1 to branch 2,
the current in branch 2 appears in branch 1.
CIRCUIT DIAGRAM

1
Each 1

820, 100
3

Ammeter

Bread board

------

Connecting wires

------

few

THEORY:

Reciprocity theorem
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EC2155-CIRCUITS AND DEVICES LAB

(0-30) mA,

TABULATION:

Practical value :( circuit -I)

1. Connect the circuit as per the circuit diagram.


V(volt)

I(mA)

Z=V/I

2. Switch on the supply and note down the corresponding ammeter readings.
3. Find ratio of input voltage to output current.
4. Interchange the position of the ammeter and power supply. Note down the
Corresponding ammeter readings
5. Verify the reciprocity theorem by equating the voltage to current ratio.

PRACTICAL VALUE :( CIRCUIT -I)

RESULT:
Thus the reciprocity theorem was verified

V(volt)

I(mA)

Z=V/I

6. CHARACTERISTICS OF PN JUNCTION DIODE

AIM:
PROCEDURE:
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EC2155-CIRCUITS AND DEVICES LAB

To plot the characteristic of PN junction diode.

2. Reverse Resistance Rr= VR/IR

COMPONENTS REQUIRED:

CIRCUIT DIAGRAM

Sl.No

Components

Range

Quantity

FORWARD BIAS:

1K
1

Diode

IN 4001

RPS

(0-30)V

Resistor

1K,

Ammeter

(0-50)mA

(0-500)A

(0-1)V

(0-30)V

voltmeter

Bread board

Connecting wires

----

------

few

+
RPS(0-30)V

1. Forward Resistance Rf=VF/IF


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EC2155-CIRCUITS AND DEVICES LAB

IN4001

(0-1)V
-

REVERSE BIAS:
FORMULA USED:

(0-50)mA

1K

(0-500)microamps

RPS(0-30)V

IN4001

(0-1)V
+

TABULATION:

PROCEDURE:
FORWARD BIAS

REVERSE BIAS

Forward bias:
Voltage(VF)

Current IF (mA)

Voltage (VR)

Current IR(mA)

1. The circuit connections are made as per the circuit diagram


2. Vary the power supply voltage such a way that readings are taken in
steps of .1 V in the voltmeter.
3. Note down the corresponding ammeter readings.
4. Plot the graph current Vs voltage.
5. Same steps are followed by reverse bias.
6. calculate dynamic resistance r=(V/I)
RESULT:

Thus the characteristic of PN junction diode was obtained.


(i)Forward resistance=

(ii)Reverse resistance=

MODEL GRAPH:
CHARACTERISTICS OF ZENER DIODE
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EC2155-CIRCUITS AND DEVICES LAB

AIM:

To draw the V-I characteristic of Zener diode and find the parameter.
COMPONENTS REQUIRED:

Sl.No

Components

Range

Quantity

Zener Diode

RPS

(0-30)V

Resistor

1K,

Ammeter

(0-50)mA

voltmeter

(0-1)V

Bread board

----

Connecting wires

------

few

FORMULA USED:
1. Forward Resistance Rf=VF/IF
2. Reverse Resistance Rr= VR/IR
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EC2155-CIRCUITS AND DEVICES LAB

TABULATION:

FORWARD BIAS:
S.No

Forward voltage (V)

Forward current I (mA)

Reverse voltage (V)

Reverse current I
(A)

REVERSE BIAS:

S.No

PROCEDURE:

Forward bias characteristic:


1. The circuit connections are made as per the circuit diagram
2. Keep the RPS connected in a minimum value and switch ON the
power supply gradually increase voltage in step of .1V .
3. Note down the corresponding ammeter and voltmeter readings.
4. Plot the forward V-I curve .
5. calculate forward resistance Rf=(V/I)

MODEL GRAPH

Reverse bias characteristic:


1. Connect the circuit as per the circuit diagram.

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EC2155-CIRCUITS AND DEVICES LAB

2. Keep the RPS connected in a minimum value and switch ON the


power supply.
3. Gradually increase voltage in step of .1V.
4. Vary the power supply in step by 1 V.
5. Note down corresponding reverse voltage and current.
6. Plot the graph current Vs voltage.
7. Plot the reverse V-I curve.

AIM:

To draw input and output characteristics of BJT in CE configuration and


to determine its parameter.
COMPONENTS REQUIRED:

Sl.No

RESULT:

Thus the characteristic of Zener diode was studied and their characteristic
was drawn.
(i)Forward resistance=
(ii)Reverse resistance=

Components

Range

Quantity

Transistor

Bc 547

RPS

(0-30)V

Resistor

1K,

Ammeter

(0-50)mA

(0-500) A
5

7. CHARACTERISTICS OF CE CONFIGURATION
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EC2155-CIRCUITS AND DEVICES LAB

voltmeter

Bread board

Connecting wires

FORMULA USED:

(0-1)V,mc

(0-30)V,mc

----

------

few

1. Input impedance (hie) =VBE/IB at VCE constant

INPUT CHARACTERISTICS:

2. Forward current gain (hfe) = IC/IB at VCE constant

IE (mA)

3. Output conductance (hoe) = IC/VCE at IB constant


4. Reverse voltage gain (hre) = VBE/VCE at IB constant
CIRCUIT DIAGRAM:

(0-50)mA
- +
1K

1K

(0-500)micro amps
VBE (V)
OUTPUT CHARACTERISTICS:

(0-30)V
RPS(0-30)V

RPS(0-30)V

IC(mA)

IE

(0-2)V

VCB (V)
TABULATION:
MODEL GRAPH:
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EC2155-CIRCUITS AND DEVICES LAB

INPUT CHARACTERISTICS:
VCE= (v)

PROCEDURE:

VCE= (v)

VCE= (v)

1. The circuit connections are made as per the circuit diagram


2. To draw the input characteristics VCE is kept constant

VBE(v)

IB(A)

VBE(v)

IB(A)

VBE(v)

IB(A)

3. Input RPS is varied and the corresponding values of I B and VBE


Voltage are noted
4. To draw the output characteristics IB is kept constant
5. output RPS is varied and the corresponding values of IC and VCE are
Noted.
6. Corresponding input and output characteristics curves are drawn.
OUTPUT CHARACTERISTICS:
IB= (A)

IB= (A)

IB=

(A)

RESULT:
Thus the static characteristics of CE mode configuration is drawn
from the output graph the h - parameter are determined.

VCE(v)

IC(mA)

VCE(v)

IC(mA)

VCE(v)

IC(mA)

(i)Input impedance

(ii)Forward current gain

(iii)Output conductance

(iv)Reverse voltage gain

8. STATIC CHARACTERISTICS OF CB CONFIGURATION


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EC2155-CIRCUITS AND DEVICES LAB

AIM:

1. Input impedance (hie) =VBE/IE at VCB constant

To draw input and output characteristics of BJT in CB configuration and


to determine its parameter.

2. Forward current gain (hfe) = IC/IE at VCB constant

COMPONENTS REQUIRED:

3. Output conductance (hoe) = IC/VCB at IE constant


4. Reverse voltage gain (hre) = VBE/VCB at IE constant
CIRCUIT DIAGRAM:

Sl.No

Components

Range

Quantity

(0-50)mA
1k

Transistor

BC 547

RPS

(0-30)V

(0-100)mA

1k

(0-30)v

Resistor

1K,

Ammeter

(0-30)mA

(0-30) mA

(0-2) V,mc

(0-30)V,mc

(0-30)V,mc

RPS(0-30)V
(0-30)v

voltmeter

Bread board

Connecting wires

FORMULAS USED:
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EC2155-CIRCUITS AND DEVICES LAB

-----

(0-2)V

Few

MODEL GRAPH:

INPUT CHARACTERISTICS:
VCB=
VBE(v)

(v)
IE(mA)

VCB=

(v)

VBE(v)

IE(mA)

VCB=
VBE(v)

(v)
IE(mA)

OUTPUT CHARACTERISTICS:

IE=

(mA)

TABULATION:
PROCEDURE:
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EC2155-CIRCUITS AND DEVICES LAB

IE=

(mA)

IE=

(mA)

1. The circuit connections are made as per the circuit diagram

AIM:

To determine the static characteristics of UJT.

2. To draw the input characteristics VCB is kept constant


3. VBE is varied and the corresponding values of IE are noted

COMPONENTS REQUIRED:

4. To draw the output characteristics IE is kept constant


5. VCB is varied and the corresponding values of IC are noted

Sl.No

6. Corresponding input and output characteristics curves are drawn

UJT

2N2646

RPS

(0-30)V

Resistor

1K,22K

Thus the static characteristics of transistor under the CB mode

Ammeter

(0-50)mA

Was determined.

voltmeter

(0-10)V,mc

(0-30)V,mc

RESULT:

(i)Input impedance (hib)

Components

Range

Quantity

Each 1

(ii)Forward current gain (hfb) =

Bread board

------

(iii)Output conductance (hob) =

Connecting wires

------

Few

(iv)Reverse voltage gain (hrb) =


FORMULA USED:

1. Negative resistance = VBE/IE.


2. Intrinsic stand off ratio = (VP-VBE)/VB1B2.
9. CHARACTERISTICS OF UJT
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EC2155-CIRCUITS AND DEVICES LAB

CIRCUIT DIAGRAM:

TABULATION:

R2

R1

I1

VB1B2=

2.2K
(0-50)mA
A

B1
E

1k

VBE (V)

Q1
2N2646

0Vdc

IE (mA)

VBE(V)

IE(mA)

B2
V4

V1

VB1B2=

(0-30)V

V3
V

V2
0Vdc

(0-30)V
RPS(0-30)V

RPS(0-30)V

M
ODEL GRAPH:
PROCEDURE:

1. Circuit connections are made as per the circuit diagram.


2. The voltage VB1B2 is kept constant and VBE is varied.
3. The corresponding values of IE are noted.
4. For different constant values of VB1B2 the values of VBE & IE are noted.
5. The input side RPS is varied slowly from zero and the voltmeter readings
are noted.
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EC2155-CIRCUITS AND DEVICES LAB

6. At one point, the needle deflects back and currents starts increasing.

To determine the characteristics of SCR.

7. The currents must not increase beyond 25mA.


COMPONENTS REQUIRED

8. Graph is plotted.
9. The current must not increase beyond .25mA.

Sl.No

Components

Range

Quantity

APPLICATION:

1. Square or Saw tooth wave generator.


2. over voltage detector.

SCR

2P4M

3. Switching, timing phase control circuit etc.

RPS

(0-30)V

Resistor

1K,10K

Ammeter

(0-50)mA

(0-100) A

(0-30)V,mc

RESULT:

Thus the parameter of UJT was determined from its characteristics.


1. negative resistance
=
2. intrinsic stand off ratio =

voltmeter

Bread board

----

Connecting wires

------

CIRCUIT DIAGRAM:
CHARATERISTICS OF SCR
AIM:
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EC2155-CIRCUITS AND DEVICES LAB

Each 1

1
Few

Iak

Vak(V)

TABULATION:

I G=
VAK (V)

MODEL GRAPH:
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EC2155-CIRCUITS AND DEVICES LAB

PROCEDURE:

(A)
IAK (mA)

I G=
VAK(V)

(A)
IAK(mA)

1. Circuit connections are made as per the circuit diagram.


2. Set the gate current IG equal to firing current vary anode to cathode

AIM:

Voltage, VAK in steps of 0.5V and note down the corresponding anode
current IAK

To determine the drain & transfer characteristics of given JFET & to


find its parameters.

3. VBO is the point where voltages suddenly drops & there is sudden
increase

COMPONENTS REQUIRED:

in anode current IA.

Sl.No

Components

Range

Quantity

4. Note down the current at that point called latching current.


5. Increase VAK insteps of N till its maximum.
6. Open the gate terminal & decrease the VAK.

FET

BFW 10

7. Holding current is the current, flow in which the deflection in both

RPS

(0-30)V

Resistor

1K

Ammeter

(0-10)mA

Voltmeter

(0-30)V

(0-10)V

1
1

Voltmeter VAK & ammeter suddenly reduces to zero.


RESULT:

Thus the characteristic of SCR was determined.

Latching current =
Holding current =

Bread board

----

VBO current

Connecting wires

------

10. CHARACTERISTICS OF JFET


FORMULA USED:
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EC2155-CIRCUITS AND DEVICES LAB

few

1. Drain resistance (rd)

= VDS/ID
MODEL GRAPH:

2. Trans conductance (gm) = ID/VGS

Drain Characteristics

3. Amplification factor () =rd*gm.


CIRCUIT DIAGRAM:
Id

Vgs=0v
Vgs=-1v
Vgs=-2v
Vds(v)

TABULATION:
DRAIN CHARACTERISTICS:

VGS=
VDS(V)

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EC2155-CIRCUITS AND DEVICES LAB

ID(mA)

VGS=
VDS(V)

ID (mA)

VGS=
VDS(V)

ID(mA)

MODEL GRAPH:

PROCEDURE:
DRAIN CHARACTERISTICS:

1. Connections are made as per the circuit diagram.


Transfer Characteristics:

2. Set gate voltage VGS=-1, vary the drain voltage VDS instep of 1V & note
down the corresponding drain current ID.

Id

3. Repeat the above procedure for VGS=0V,-2V.


4. Plot the graph for a constant VDS Vs ID
5. Find the drain resistance (rd) = VDS/ID

TRANSFER CHARACTERISTICS:

Vgs(v)

1. Connections are made as per the circuit diagram.


TRANSFER CHARACTERISTICS:
2. Set gate voltage VDS=1V, vary the gate voltage VGS in step of 1V and
VDS=

VDS=

VDS=
note down the corresponding drain current ID

VGS(V)

ID(mA)

VGS(V)

ID(mA)

VGS(V)

ID(mA)
3. Repeat the above procedure for VDS=5V, 10V.
4. Plot the graph for VGS Vs ID.
5. Find the Trans conductance (gm)
gm = ID/VGS

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EC2155-CIRCUITS AND DEVICES LAB

CHARACTERISTICS OF MOSFET
RESULT:

AIM:

Thus the drain and transfer characteristics of JFET is drawn and the
parameters were determined.

To draw the static characteristics of the given MOSFET and to find


its parameter.

1. Drain resistance (rd)

2. Trans conductance (gm)

3. Amplification factor ()

=...

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EC2155-CIRCUITS AND DEVICES LAB

COMPONENTS REQUIRED:

Sl.No

Components

Range

Quantity

(0-30)V

330 ,470

Each 1

RPS

Resistor

MOSFET

Ammeter

(0-50)mA

Voltmeter

(0-10)V,

(0-30)V

Bread board

------

Connecting wires

------

few

FORMULA USED:

Drain resistance rd =VDS/ ID

TABULATION:
DRAIN CHARACTERISTICS:

Trans conductance (gm) = ID/VGS


Amplification factor (M) = rd* gm

VGS=
VDS(V)

VGS=
ID(mA)

VDS(V)

VGS=
ID (mA)

VDS(V)

ID(mA)

CIRCUIT DIAGRAM

TRANSFER CHARACTERISTICS:
VDS=
VGS(V)

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EC2155-CIRCUITS AND DEVICES LAB

VDS=
ID(mA)

VGS(V)

VDS=
ID(mA)

VGS(V)

ID(mA)

PROCEDURE:

11. CHARACTERISTICS OF DIAC

Transfer characteristics:
1.
2.
3.
4.
5.

AIM:

Connections are made as per the circuit diagram.


Set VDS some constant voltage.
vary the input side RPS measure the corresponding VGS and ID
measure the VGS in which ammeter shows deflection and VDS
Plot the graph voltage against current.

To draw the VI characteristics of the given DIAC and determine cut in


voltage.
COMPONENTS REQUIRED:

Sl.No

Drain characteristics:

Components

Range

Quantity

1. Set the input above the threshold voltage.


2. Vary the input side RPS and measure the corresponding VDS and
ID
3. Plot the graph voltage against current.

RESULT:

RPS

(0-60)V

Resistor

1 K

DIAC

DB3

Ammeter

(0-30)mA

Voltmeter

(0-50)V

Bread board

------

Connecting wires

------

few

Thus the characteristics of MOSFET were drawn.


Drain resistance rd =VDS/ ID
Trans conductance (gm)= ID/VGS
Amplification factor (M) = rd* gm

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EC2155-CIRCUITS AND DEVICES LAB

=
=

CIRCUIT DIAGRAM

MT1 is positive with respect to MT2

DIAC
Sl.NO

Voltage(V)

Current(mA)

MT1 (-ve) with respect to MT2


(0-30)mA
1.0k

(0-60)V
RPS

V1
12 V

V_

MT2 (+)
(0-50)V
MT1(-)

MT1 (+ve) with respect to MT2


(0-30)mA
1.0k

(0-60)V
RPS

V2
12 V

+
+

V_

MT1 (+)

(0-50)V
MT2(-)

MT2 is positive with respect to MT1

Sl.NO

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EC2155-CIRCUITS AND DEVICES LAB

Voltage(V)

Current(mA)

PROCEDURE:

CHARACTERISTICS OF TRIAC

1. MT1 is positive w.r.t MT2.

AIM:

2. Connections are made as per the circuit diagram.


3. Vary the power supply.

To draw the characteristics of the given TRIAC and determine break


over voltage.

4. Note down the corresponding ammeter and voltmeter reading.

COMPONENTS REQUIRED:

5. Plot the graph V against I.


6. MT1 is negative w.r.t. MT2.
7. Repeat the step 3 to 5.

Sl.No

Components

Range

Quantity

RPS

(0-30)V

Resistor

1 K/5w, 1 K

TRIAC

Ammeter

(0-50)mA

Voltmeter

(0-15)V

(0-30)V

RESULT:

Thus the characteristics of DIAC were drawn and the cut in voltage was
determined.

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EC2155-CIRCUITS AND DEVICES LAB

Bread board

------

Connecting wires

------

few

THEORY:

CIRCUIT DIAGRAM

It is a three terminal semiconductor switching device which can

MT1 (-ve) with respect to MT2

(0-30)mA

control alternating current in a load. Its three terminals are MT 1 and MT2

and the gate. Triac is equivalent to two SCRs connected in parallel but in the
(0-50)mA

reverse direction. So triac will act as a switch for both directions.

1K/5W

Like an SCR, a triac also starts conducting only when the breakover
voltage is reached. Earlier to that the leakage current which is very small in

+ A

1K/5W

A +

MT2

_
MT1

+
V
_

(0-30)V
RPS

(0-15)V

(0-30)V
RPS

magnitude flows through the device and therefore remains in the OFF state.
The device, when starts conducting, allows very heavy amount of current to
flow through it. The high inrush of current must be limited using external
resistance, or it may otherwise damage the device.

MT2 (-ve) with respect to MT1

During the positive half cycle, MT1 is positive w.r.t MT2, whereas
MT2 is positive w.r.t MT1 during negative half cycle. A

Triac is a

bidirectional device and can be triggered either by a positive or by a

(0-50)mA
1K/5W

negative gate signal. By applying proper signal at the gate, the breakover
voltage of the device can be changed: thus phase control process can be
achieved.
Triac is used for illumination control, temperature control, liquid
level control, motor speed control and as static switch to turn a.c power ON
and OFF.
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EC2155-CIRCUITS AND DEVICES LAB

(0-30)mA

(0-30)V
RPS

+ A

1K/5W

A +

MT1

_
MT2

+
V
_

(0-15)V

(0-30)V
RPS

TABULATION:

PROCEDURE:

MT1 is positive with respect to MT2

1. Connect the circuit as per circuit diagram.


2. To set gate current (Ig),VMT1,VMT2

I G=

3. Vary Vg till VAK suddenly drops.

I G=

4. Note down the corresponding IG,set gate current equal firing


current.

VMT2

IMT2

VMT2

IMT2

5. Vary anode to cathode Vge.


6. Vary VAK supply voltage in steps 7 note down the corresponding
ammeter readings.
7. Open the gate terminal & decrease VAK.
RESULT:

Thus the characteristic of TRIAC was drawn.


MT2 is positive with respect to MT1

MT1 break over voltage (VBO) =


MT1 break over current (IBO)

I G=

I G=

MT2 break over voltage (-VBO) =


MT2 break over current (-IBO) =

VMT2

IMT2

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EC2155-CIRCUITS AND DEVICES LAB

VMT2

IMT2

12.CHARACTERISTICS OF PHOTODIODE

CIRCUIT DIAGRAM

AND PHOTOTRANSISTOR
PHOTO DIODE
Aim:
To study of photo-detectors characteristics.
1. Photo-diode.
2. Photo-transistor
APPARATUS REQUIRED:
S.
No.

Apparatus
Required

Range

Quantity

Power supply

(0-30) V

Ammeter

(0-10) mA

Voltmeter

(0-10) V

(0-30) V

680

1 K

TABULATION

Resistor

PHOTO TRANSISTOR
5

Breadboard

Connecting wires

10

Photo diode

Phototransistor

[Type text]
EC2155-CIRCUITS AND DEVICES LAB

TABULATION

Distance(cm)

RESULT
Current

PROCEDURE
1) Connect the circuit as per the circuit diagram.
2) Set the voltage of the bulb (Say 2V), vary the
Voltage of the diode in stepsof 1Vand note down
The corresponding diode value Ir
3) Repeat the above Procedure for Vd=4V, 6V,etc
4) Plot the graph.

[Type text]
EC2155-CIRCUITS AND DEVICES LAB

Thus the following characteristics of Photo diode & PhotoTransistor


were obtained and graph was drawn.

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